Download: PROFET® BTS409L1 Smart Highside Power Switch

PROFET® BTS409L1 Smart Highside Power Switch Features Product Summary • Overload protection Overvoltage protection V • bb(AZ) 43 V Current limitation • V 5.0 ... 34 V Short circuit protection Operating voltage bb(on) • Thermal shutdown On-state resistance RON 200 mΩ • Overvoltage protection (including load dump) Load current (ISO) IL(ISO) 2.3 A • Fast demagnetization of inductive loads Current limitation I • L(SCr) 4 A Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • TO-220AB/5 Open drain diagnostic output • Open load detection in ON-state...
Author: Zając Shared: 8/19/19
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PROFET® BTS409L1 Smart Highside Power Switch Features Product Summary

• Overload protection Overvoltage protection V • bb(AZ) 43 V Current limitation • V 5.0 ... 34 V Short circuit protection Operating voltage bb(on) • Thermal shutdown On-state resistance RON 200 mΩ • Overvoltage protection (including load dump) Load current (ISO) IL(ISO) 2.3 A • Fast demagnetization of inductive loads Current limitation I • L(SCr) 4 A Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • TO-220AB/5 Open drain diagnostic output • Open load detection in ON-state • CMOS compatible input 5 • 5 Loss of ground and loss of Vbb protection • 5 Electrostatic discharge (ESD) protection11Standard Straight leads SMD

Application

• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • All types of resistive, inductive and capacitve loads • Replaces electromechanical relays, fuses and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. + Vbb 3 Voltage Overvoltage Current Gate source protection limit protection V Logic Voltage Charge pump Limit for OUT unclamped 5 sensor Level shifter ind. loads Temperature sensor 2 IN Rectifier Open load Short to Vbb Load ESD Logic detection 4 ST RO

GND

GND PROFET Signal GND Load GND 1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST connection, reverse load current limited by connected load.

Semiconductor Group 1 12.96

, Pin Symbol Function 1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3 Vbb + Positive power supply voltage, the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT O Output to the load (Load, L) Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 3) Vbb 43 V Supply voltage for full short circuit protection Vbb 34 V Tj Start=-40 ...+150°C Load dump protection2) VLoadDump = UA + Vs, UA = 13.5VV)Load dump4 60 V RI3)= 2 Ω, RL= 5.3 Ω, td= 200 ms, IN= low or high Load current (Short circuit current, see page 4) IL self-limited A Operating temperature range Tj -40 ...+150 °C Storage temperature range Tstg -55 ...+150 Power dissipation (DC), TC ≤ 25 °C Ptot 18 W Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. IL = 2.3 A, ZL = 98 mH, 0 Ω: EAS 335 mJ Electrostatic discharge capability (ESD) IN: VESD 1.0 kV (Human Body Model) all other pins: 2.0 acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 Input voltage (DC) VIN -10 ... +16 V Current through input pin (DC) IIN ±2.0 mA Current through status pin (DC) IST ±5.0 see internal circuit diagrams page 6

Thermal Characteristics

Parameter and Conditions Symbol Values Unit min typ max Thermal resistance chip - case: RthJC - - 7 K/W junction - ambient (free air): RthJA - - 75 SMD version, device on PCB5): 39 2) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the protection of the input is integrated. 3) RI = internal resistance of the load dump test pulse generator 4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group 2,

Electrical Characteristics

Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 1.8 A Tj=25 °C: RON - 160 200 mΩ Tj=150 °C: 320 400 Nominal load current, ISO Norm (pin 3 to 5) 1.8 2.3 VON = 0.5 V, TC = 85 °C IL(ISO) - A Output current (pin 5) while GND disconnected or IL(GNDhigh) - - 10 mA GND pulled up, Vbb=30 V, VIN= 0, see diagram Turn-on time IN to 90% VOUT: ton 80 200 400 µs Turn-off time IN to 10% VOUT: toff 80 200 400 RL = 12 Ω, Tj =-40...+150°C Slew rate on dV /dton 0.1 - 1 V/µs 10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C Slew rate off -dV/dtoff 0.1 - 1 V/µs 70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C Operating Parameters Operating voltage6) Tj =-40...+150°C: Vbb(on) 5.0 - 34 V Undervoltage shutdown Tj =-40...+150°C: Vbb(under) 3.5 - 5.0 V Undervoltage restart Tj =-40...+25°C: Vbb(u rst) - - 5.0 V Tj =+150°C: 7.0 Undervoltage restart of charge pump Vbb(ucp) - 5.6 7.0 V see diagram page 11 Tj =-40...+150°C: Undervoltage hysteresis ∆Vbb(under) - 0.2 - V ∆Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150°C: Vbb(over) 34 - 43 V Overvoltage restart Tj =-40...+150°C: Vbb(o rst) 33 - - V Overvoltage hysteresis Tj =-40...+150°C: ∆Vbb(over) - 0.5 - V Overvoltage protection7) Tj =-40...+150°C: Vbb(AZ) 42 47 - V Ibb=40 mA Standby current (pin 3) VIN=0 Tj=-40...+25°C: Ibb(off) - 10 23 µA Tj= 150°C: - 12 28 Leakage output current (included in Ibb(off)) IL(off) - - 12 µA VIN=0 6) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V 7) See also VON(CL) in table of protection functions and circuit diagram page 7. Semiconductor Group 3, Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Operating current (Pin 1)8), VIN=5 V, IGND - 1.8 3.5 mA Tj =-40...+150°C Protection Functions Initial peak short circuit current limit (pin 3 to 5) IL(SCp) Tj =-40°C: 5.5 9.5 13 A Tj =25°C: 4.5 7.5 11 Tj =+150°C: 2.5 4.5 7 Repetitive short circuit shutdown current limit IL(SCr) Tj = Tjt (see timing diagrams, page 9) - 4 - A Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA: VON(CL) 41 47 53 V Thermal overload trip temperature Tjt 150 - - °C Thermal hysteresis ∆Tjt - 10 - K Reverse battery (pin 3 to 1) 9) -Vbb - - 32 V Diagnostic Characteristics Open load detection current Tj=-40 °C: IL (OL) 10 - 200 mA (on-condition) Tj=25 ..150°C: 10 - 150 Open load detection voltage10) (off-condition) VOUT(OL) 234VTj=-40..150°C: Internal output pull down (pin 5 to 1), VOUT=5 V, Tj=-40..150°C RO 4 10 30 kΩ 8) Add IST, if IST > 0, add IIN, if VIN>5.5 V 9) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). 10) External pull up resistor required for open load detection in off state. Semiconductor Group 4, Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Input and Status Feedback11) Input resistance RI 2.5 3.5 6 kΩ see circuit page 6 Input turn-on threshold voltage Tj =-40..+150°C: VIN(T+) 1.7 - 3.5 V Input turn-off threshold voltage Tj =-40..+150°C: VIN(T-) 1.5 - - V Input threshold hysteresis ∆ VIN(T) - 0.5 - V Off state input current (pin 2), VIN = 0.4 V, IIN(off) 1 - 50 µA Tj =-40..+150°C On state input current (pin 2), VIN = 3.5 V, IIN(on) 20 50 90 µA Tj =-40..+150°C Delay time for status with open load after switch td(ST OL4) 100 400 800 µs off (see timing diagrams, page 10), Tj =-40..+150°C Status invalid after positive input slope td(ST) - 250 600 µs (open load) Tj=-40 ... +150°C: Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high) 5.4 6.1 - V ST low voltage Tj =-40...+25°C, IST = +1.6 mA: VST(low) - - 0.4 Tj = +150°C, IST = +1.6 mA: - - 0.6 11) If a ground resistor RGND is used, add the voltage drop across this resistor. Semiconductor Group 5,

Truth Table

Input- Output Status level level NormalLLHoperationHHHOpen load L 12) H (L13)) HHLShort circuitLHL14) to VbbHHH(L15)) Overtem- LLHperatureHLLUnder- LLHvoltageHLHOvervoltageLLHHLHL= "Low" Level X = don't care Z = high impedance, potential depends on external circuit H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 10...11)

Terms Status output

I +5Vbb I IN

V

IN bb RST(ON) ST 2 IL VON PROFET OUTIST 5 ST ESD- V IN VST GND

ZD GND

V 1 bb IGND VOUT R ESD-Zener diode: 6.1 V typ., max 5 mA;GND RST(ON) < 380 Ω at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).

Input circuit (ESD protection)

R Inductive and overvoltage output clamp

I IN

+ Vbb

V

ESD-ZD ZI II GND VON ESD zener diodes are not to be used as voltage clamp OUT at DC conditions. Operation in this mode may result in GND PROFET a drift of the zener voltage (increase of up to 1 V). VON clamped to 47 V typ. 12) Power Transistor off, high impedance 13) with external resistor between pin 3 and pin 5 14) An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious. 15) Low resistance to Vbb may be detected in ON-state by the no-load-detection

Semiconductor Group 6

,

GND disconnect Overvolt. and reverse batt. protection

+ Vbb VZ2 RINRVIN I IN bb Logic PROFET OUT R ST ST ST V 4Z1 PROFET GND GNDVV1bb IN VST VGND

RGND

Signal GND Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . VZ1 = 6.2 V typ., VZ2 = 47 V typ., RGND = 150 Ω, Due to VGND >0, no VST = low signal available. RST= 15 kΩ, RI= 3.5 kΩ typ.

GND disconnect with GND pull up Open-load detection 3

ON-state diagnostic condition: VON < RON * IL(OL); IN V high IN bb PROFET OUT + Vbb 5

ST GND VON

ONVVVIN ST V bb GND

OUT

Any kind of load. If VGND > VIN - VIN(T+) device stays off Logic Open load Due to VGND >0, no VST = low signal available. unit detection

Vbb disconnect with energized inductive

load OFF-state diagnostic condition: V 3OUT > 3 V typ.; IN low high VIN bb PROFET OUT REXT ST

GND

OFF 1

VOUT V

bb Logic Open load RO unit detection Normal load current can be handled by the PROFET itself. Signal GND

Semiconductor Group 7

,

Vbb disconnect with charged external Maximum allowable load inductance for

inductive load a single switch off L = f (IL ); Tj,start = 150°C,TC = 150°C const., S 3 Vbb = 12 V, RL = 0 Ω highVL[mH]IN bb 2 10000 PROFET OUT5D

ST GND

1 1000

V

bb If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. 100

Inductive Load switch-off energy

dissipation E bbEASELoad

V

IN bb PROFETOUT1= 12345STELGNDLIL [A] Z L { RLERTransient thermal impedance chip case ZthJC = f(tp)ZthJC [K/W] Energy stored in load inductance: E 2L = 1/2·L·IL While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt, 1 with an approximate solution for RL > 0 Ω: IL· L I ·REAS= 2 R ·(Vbb + |VOUT(CL)|)· ln (1+ L L · L |V ) OUT(CL)| D= 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 1E2 tp [s]

Semiconductor Group 8

,

Timing diagrams

Figure 2b: Switching an inductive load Figure 1a: Vbb turn on:

IN IN V

bb t d(ST)

ST

*) V V OUT OUT ST open drainILIL(OL) t t proper turn on under all conditions *) if the time constant of load is too large, open-load-status may occur Figure 2a: Switching a lamp, Figure 3a: Short circuit shut down by overtempertature, reset by cooling

IN IN ST

ILVIOUT L(SCp) IL(SCr)

I L

t ST t Heating up may require several milliseconds, depending on external conditions

Semiconductor Group 9

, Figure 4a: Overtemperature: Figure 5b: Open load: detection in ON-state, open Reset if Tj OUT T I normal open normalJLtttd(ST OL1) = 30 µs typ., td(ST OL2) = 20 µs typ Figure 5a: Open load: detection in ON-state, turn on/off to open load Figure 5c: Open load: detection in ON- and OFF-state (with REXT), turn on/off to open load

IN IN

t td(ST OL4) ST d(ST) t ST d(ST)

V

OUT V

OUT I

L I open L openttThe status delay time td(ST OL4) allows to ditinguish between the failure modes "open load" and "overtemperature".

Semiconductor Group 10

, Figure 6a: Undervoltage: Figure 7a: Overvoltage: IN IN V Vbb Vbb ON(CL) Vbb(over) Vbb(o rst) V Vbb(u cp) bb(under) Vbb(u rst)

V OUT

V OUT

ST

ST open drainttFigure 6b: Undervoltage restart of charge pump V VON(CL)on

V

bb(over) V V bb(u rst) bb(o rst)

V

bb(u cp)

V

bb(under) Vbb charge pump starts at Vbb(ucp) =5.6 V typ.

Semiconductor Group 11

off-state on-state off-state,

Package and Ordering Code SMD TO-220AB/5, Opt. E3062 Ordering code

All dimensions in mm BTS409L1 E3062A T&R: Q67060-S6107-A4

Standard TO-220AB/5 Ordering code

BTS409L1 Q67060-S6107-A2

Changed since 04.96 Date Change Dec Zth Specification added

1996 td(ST OL4) max reduced from 1500 to 800µs

ESD capability increased TO-220AB/5, Option E3043 Ordering code EAS maximum rating and diagram

BTS409L1 E3043 Q67060-S6107-A3 added Components used in life-support devices or systems must be expressly authorised for such purpose! Critical components16) of the Semiconductor Group of Siemens AG, may only be used in life supporting devices or systems17) with the express written approval of the Semiconductor Group of Siemens AG. 16) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 17) Life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail, it is reasonably to assume that the health of the user or other persons may be endangered.

Semiconductor Group 12

]
15

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