Download: STANDARD TRIACS .FEATURES.HIGH SURGE CURRENT CAPABILITYCOMMUTATION : (dV/dt)c > 10V/µs

® BTB24 B STANDARD TRIACS .FEATURES.HIGH SURGE CURRENT CAPABILITYCOMMUTATION : (dV/dt)c > 10V/µs DESCRIPTION A1 The BTB24 B triac family are high performance A2 G glass passivated PNPN devices. These parts are suitables for general purpose ap- plications where high surge current capability is re- TO220AB quired. Application such as phase control and (Plastic) static switching on inductive or resistive load. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current Tc = 90 °C 25 A (360° conduction angle) ITSM Non repetitive surge peak on-state current tp = 8.3 ...
Author: Zając Shared: 8/19/19
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® BTB24 B

STANDARD TRIACS

.FEATURES.HIGH SURGE CURRENT CAPABILITYCOMMUTATION : (dV/dt)c > 10V/µs

DESCRIPTION

A1 The BTB24 B triac family are high performance A2 G glass passivated PNPN devices. These parts are suitables for general purpose ap- plications where high surge current capability is re- TO220AB quired. Application such as phase control and (Plastic) static switching on inductive or resistive load. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current Tc = 90 °C 25 A (360° conduction angle) ITSM Non repetitive surge peak on-state current tp = 8.3 ms 260 A ( Tj initial = 25°C ) tp = 10 ms 250 I2t I2t value tp = 10 ms 312 A2s dI/dt Critical rate of rise of on-state current Repetitive 50 A/µs Gate supply : IG = 2 . IGT tr ≤ 100ns F = 100 Hz Tstg Storage and operating junction temperature range - 40 to + 150 °C Tj - 40 to + 125 °C Tl Maximum lead temperature for soldering during 10 s at 4.5 mm 260 °C from case Symbol Parameter BTB24-... B Unit 400 600 700 800 VDRM Repetitive peak off-state voltage 400 600 700 800 V VRRM Tj = 125 °C October 1998 - Ed: 2A 1/4,

THERMAL RESISTANCES

Symbol Parameter Value Unit Rth (j-a) Junction to ambient 60 °C/W Rth (j-c) DC Junction to case for DC 1.5 °C/W Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) 1.1 °C/W

GATE CHARACTERISTICS (maximum values)

PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs).

ELECTRICAL CHARACTERISTICS

Symbol Test Conditions Quadrant Suffix Unit IGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III-IV MIN 5 mA I-II-III MAX 50 IV MAX 100 VGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III-IV MAX 1.3 V VGD VD=VDRM RL=3.3kΩ Tj=125°C I-II-III-IV MIN 0.2 V IL IG=1.2 IGT Tj=25°C I-III-IV MAX 70 mA II 150 IH * IT= 500mA gate open Tj=25°C MAX 50 mA VTM * ITM= 35A tp= 380µs Tj=25°C MAX 1.6 V IDRM VDRM Rated Tj=25°C MAX 5 µA IRRM VRRM Rated Tj=125°C MAX 2 mA dV/dt * Linear slope up to VD=67%VDRM Tj=125°C MIN 750 V/µs gate open (dV/dt)c * (dI/dt)c = 11.1A/ms Tj=125°C MIN 10 V/µs * For either polarity of electrode A2 voltage with reference to electrode A1. Fig. 1: Maximum power dissipation versus RMS Fig. 2: Correlation between maximum power dissipation on-state current. and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. P(W) 35 P(W) Tcase (°C) 30 α = 180° 30 Rth=3°C/W Rth=2°C/W Rth=1°C/W Rth=0°C/W 90 25 α = 120° 25 20 100α = 90° 20 15 15 α = 60° 110 10 180° 10 α α= 30° α = 180° 5α5120Tamb(°C) IT(rms)(A) 0 1250020 40 60 80 100 120 1400510 15 20 25 2/4, Fig. 3: RMS on-state current versus case temperature. Fig. 4: Relative variation of thermal impedance versus pulse duration. IT(rms)(A) K=[Zth/Rth] α 1.00= 180° 25 Zth(j-c) Zth(j-a) 15 0.10 Tcase(°C) tp(s) 0 0.01 0 25 50 75 100 125 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 5: Relative variation of gate trigger current and Fig. 6: Non Repetitive surge peak on-state current holding current versus junction temperature (typical versus number of cycles. values). IGT,IH[Tj] / IGT,IH[Tj=25°C] ITSM(A) 2.5 220 Tj initial=25°C 200 F=50Hz 2.0 IGT 180 1.5 140 IH 100 1.0 80 0.5 40 Tj(°C) 20 Number of cycles 0.0 0 -40 -20 0 20 40 60 80 100 120 140 1 10 100 1000 Fig. 7: Non repetitive surge peak on-state current for a Fig. 8: On-state characteristics (maximum values). sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2t. ITSM(A),I²t(A²s) ITM(A) 1000 300 Tj initial=25°C Tj=25°C ITSM Tj=Tj max. I²t Tj max.: Vto=0.95V tp(ms) VTM(V) Rt=19mΩ12510 10.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 3/4,

PACKAGE MECHANICAL DATA TO220AB Plastic

B C

REF. DIMENSIONS

I b2 Millimeters Inches

L Min. Max. Min. Max. A 14.23 15.87 0.560 0.625

F a1 4.50 0.177 a2 12.70 14.70 0.500 0.579AB10.20 10.45 0.402 0.411 l1 b1 0.64 0.96 0.025 0.038 a1 b2 1.15 1.39 0.045 0.055

C 4.48 4.82 0.176 0.190

c1 0.35 0.65 0.020 0.026 l3 l2 c2 2.10 2.70 0.083 0.106 a2 e 2.29 2.79 0.090 0.110 b1

F 5.85 6.85 0.230 0.270

b1

I 3.55 4.00 0.140 0.157 L 2.54 3.00 0.100 0.118

c1 I1 1.30 0.051 e c2 l2 1.45 1.75 0.057 0.069 e l3 0.80 1.20 0.031 0.047 Cooling method : C Marking : type number Weight : 2.25 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Austral ia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 4/4]
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