Download: Infineon BUP 314

IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 Pin3GCEType VCE IC Package Ordering Code BUP 314 1200V 52A TO-218 AB Q67040-A4206 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 kΩ 1200 Gate-emitter voltage VGE ± 20 DC collector current IC A TC = 25 °C 52 TC = 90 °C 33 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 104 TC = 90 °C 66 Avalanche energy, single pulse EAS mJ IC = 25 A, VCC = 50 V, RGE = 25ΩL= 200 µH, Tj = 25 °C 65 Pow...
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IGBT

Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 Pin3GCEType VCE IC Package Ordering Code BUP 314 1200V 52A TO-218 AB Q67040-A4206 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 kΩ 1200 Gate-emitter voltage VGE ± 20 DC collector current IC A TC = 25 °C 52 TC = 90 °C 33 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 104 TC = 90 °C 66 Avalanche energy, single pulse EAS mJ IC = 25 A, VCC = 50 V, RGE = 25ΩL= 200 µH, Tj = 25 °C 65 Power dissipation Ptot W TC = 25 °C 300 Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Semiconductor Group 1 Jul-30-1996, Maximum Ratings Parameter Symbol Values Unit DIN humidity category, DIN 40 040 - E - IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56 Thermal Resistance Thermal resistance, chip case RthJC ≤ 0.42 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Gate threshold voltage VGE(th) V VGE = VCE, IC = 0.35 mA 4.5 5.5 6.5 Collector-emitter saturation voltage VCE(sat) VGE = 15 V, IC = 25 A, Tj = 25 °C - 2.7 3.2 VGE = 15 V, IC = 25 A, Tj = 125 °C - 3.3 3.9 VGE = 15 V, IC = 42 A, Tj = 25 °C - 3.4 - VGE = 15 V, IC = 42 A, Tj = 125 °C - 4.3 - Zero gate voltage collector current ICES mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C - - 0.25 Gate-emitter leakage current IGES nA VGE = 25 V, VCE = 0 V - - 100 AC Characteristics Transconductance gfs S VCE = 20 V, IC = 25 A 8.5 20 - Input capacitance Ciss pF VCE = 25 V, VGE = 0 V, f = 1 MHz - 1650 2200 Output capacitance Coss VCE = 25 V, VGE = 0 V, f = 1 MHz - 250 380 Reverse transfer capacitance Crss VCE = 25 V, VGE = 0 V, f = 1 MHz - 110 160 Semiconductor Group 2 Jul-30-1996, Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 25 A RGon = 47 Ω - 75 110 Rise time tr VCC = 600 V, VGE = 15 V, IC = 25 A RGon = 47 Ω - 65 100 Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 25 A RGoff = 47 Ω - 420 560 Fall time tf VCC = 600 V, VGE = -15 V, IC = 25 A RGoff = 47 Ω - 45 60 Semiconductor Group 3 Jul-30-1996,

Power dissipation Collector current Ptot = ƒ(TC) IC = ƒ(TC)

parameter: Tj ≤ 150 °C parameter: VGE ≥ 15 V , Tj ≤ 150 °C 320 55

A W

P I tot C 200 35 120 2000020 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160 TC TC

Safe operating area Transient thermal impedance IGBT IC = ƒ(VCE) Zth JC = ƒ(tp)

parameter: D = 0, TC = 25°C , Tj ≤ 150 °C parameter: D = tp / T 10 3 10 0

A

K/WItp= 2 . 0µsZC10 2 thJC 10 µs 10 -1 100 µs 101D= 0.50 1 ms 0.20 10 -2 0.10 10 ms 0.05 10 0 0.02 0.01 single pulse

DC

10 -1 10 -30123-5 -4 -3 -2 -1 0 10 10 10 10 V 10 10 10 10 10 s 10 VCE tp Semiconductor Group 4 Jul-30-1996, Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C 50 50AA17V 17V 15V 15V I 40 C 13VIC13V 11V 11V 35 9V 35 9V 7V 7V 30 30 25 25 20 20 15 15 10 1055000123V50123V5VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V

A

I 40C0246810 V 14

VGE

Semiconductor Group 5 Jul-30-1996, Typ. switching time Typ. switching time I = f (I ) , inductive load , T = 125°C t = f (RG) , inductive load , Tj = 125°CC j par.: V = 600 V, V = ± 15 V, R = 47 Ω par.: VCE = 600 V, VGE = ± 15 V, IC = 25 ACE GE G 10 3 10 3 tdoff tdoffttns ns tdon tr 10 2 tdon 10 tr tf tf 10 1 10 0 10 20 30 40 A 60 0 20 40 60 80 100 120 140 Ω 180 I RC G Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 47 Ω par.: VCE = 600V, VGE = ± 15 V, IC = 25 A 10 Eon 10 mWs mWsE8E877Eon6655Eoff443Eoff3221100010 20 30 40 A 60 0 20 40 60 80 100 120 140 Ω 180 IC RG Semiconductor Group 6 Jul-30-1996,

Typ. gate charge Typ. capacitances VGE = ƒ(QGate) C = f (VCE)

parameter: IC puls = 25 A parameter: VGE = 0 V, f = 1 MHz 20 10

V

nF V 16 GE C Ciss 14 600 V 800 V 10 0 Coss 10 -1 Crss 0 10 -2 0 20 40 60 80 100 120 140 1700510 15 20 25 30 V 40 QGate VCE

Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150°C ICpuls = f (VCE) , Tj = 150°C

parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH parameter: VGE = 15 V 10 2.5 ICsc/I C(90°C) ICpuls/IC 6 1.5 4 1.0 2 0.5 0 0.0 0 200 400 600 800 1000 1200 V 1600 0 200 400 600 800 1000 1200 V 1600 VCE VCE Semiconductor Group 7 Jul-30-1996, Package Outlines Dimensions in mm Weight: Semiconductor Group 8 Jul-30-1996]
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