Download: Infineon BUP 213

IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 Pin3GCEType VCE IC Package Ordering Code BUP 213 1200V 32A TO-220 AB Q67040-A4407 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 kΩ 1200 Gate-emitter voltage VGE ± 20 DC collector current IC A TC = 25 °C 32 TC = 90 °C 20 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 64 TC = 90 °C 40 Avalanche energy, single pulse EAS mJ IC = 15 A, VCC = 50 V, RGE = 25ΩL= 200 µH, Tj = 25 °C 22 Powe...
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IGBT

Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 Pin3GCEType VCE IC Package Ordering Code BUP 213 1200V 32A TO-220 AB Q67040-A4407 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 kΩ 1200 Gate-emitter voltage VGE ± 20 DC collector current IC A TC = 25 °C 32 TC = 90 °C 20 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 64 TC = 90 °C 40 Avalanche energy, single pulse EAS mJ IC = 15 A, VCC = 50 V, RGE = 25ΩL= 200 µH, Tj = 25 °C 22 Power dissipation Ptot W TC = 25 °C 200 Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Semiconductor Group 1 Nov-30-1995, Maximum Ratings Parameter Symbol Values Unit DIN humidity category, DIN 40 040 - E - IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56 Thermal Resistance IGBT thermal resistance, chip case RthJC ≤ 0.63 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Gate threshold voltage VGE(th) V VGE = VCE, IC = 0.35 mA 4.5 5.5 6.5 Collector-emitter saturation voltage VCE(sat) VGE = 15 V, IC = 15 A, Tj = 25 °C - 2.7 3.2 VGE = 15 V, IC = 15 A, Tj = 125 °C - 3.3 3.9 VGE = 15 V, IC = 30 A, Tj = 25 °C - 3.4 - VGE = 15 V, IC = 30 A, Tj = 125 °C - 4.3 - Zero gate voltage collector current ICES mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C - - 0.8 Gate-emitter leakage current IGES nA VGE = 25 V, VCE = 0 V - - 100 AC Characteristics Transconductance gfs S VCE = 20 V, IC = 15 A - 12 - Input capacitance Ciss pF VCE = 25 V, VGE = 0 V, f = 1 MHz - 1000 1350 Output capacitance Coss VCE = 25 V, VGE = 0 V, f = 1 MHz - 150 225 Reverse transfer capacitance Crss VCE = 25 V, VGE = 0 V, f = 1 MHz - 70 100 Semiconductor Group 2 Nov-30-1995, Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 82 Ω - 70 100 Rise time tr VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 82 Ω - 45 70 Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 82 Ω - 400 530 Fall time tf VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 82 Ω - 70 95 Semiconductor Group 3 Nov-30-1995,

Power dissipation Collector current Ptot = ƒ(TC) IC = ƒ(TC)

parameter: Tj ≤ 150 °C parameter: VGE ≥ 15 V , Tj ≤ 150 °C 220 32

W A

P I tot C 140 20 80 1200020 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160 TC TC

Safe operating area Transient thermal impedance IGBT IC = ƒ(VCE) Zth JC = ƒ(tp)

parameter: D = 0, TC = 25°C , Tj ≤ 150 °C parameter: D = tp / T 10 2 100tp= 9 . 0µs10 µs A K/WIZCthJC 10 1 10 -1 100 µs D = 0.50 0.20 1 ms 10 0 10 -2 0.10 0.05 0.02 10 ms single pulse 0.01

DC

10 -1 10 -30123-5 -4 -3 -2 -1 0 10 10 10 10 V 10 10 10 10 10 s 10 VCE tp Semiconductor Group 4 Nov-30-1995, Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C 30 30AA17V 17V 24 15V 15V IC 13V I 24 C 13V 22 11V 22 11V 9V 9V 20 7V 20 7V 18 18 16 16 14 14 12 12 10 1088664422000123V50123V5VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V

A

I 24C0246810 V 14

VGE

Semiconductor Group 5 Nov-30-1995, Typ. switching time Typ. switching time I = f (I ) , inductive load , T = 125°C t = f (RG) , inductive load , Tj = 125°CC j par.: V = 600 V, V = ± 15 V, R = 82 Ω par.: VCE = 600 V, VGE = ± 15 V, IC = 15 ACE GE G 10 3 10 tdoff t tdoff t ns ns tdon 2 tr 10 2 10 tr tdon tf tf 10 1 100510 15 20 25 30 A 40 0 50 100 150 200 Ω 300 I RC G Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 82 Ω par.: VCE = 600V, VGE = ± 15 V, IC = 15 A 10 10 mWs mWsE8E8Eon7665544Eon Eoff322Eoff11000510 15 20 25 30 A 40 0 50 100 150 200 Ω 300 IC RG Semiconductor Group 6 Nov-30-1995,

Typ. gate charge Typ. capacitances VGE = ƒ(QGate) C = f (VCE)

parameter: IC puls = 15 A parameter: VGE = 0 V, f = 1 MHz 10 1 20

V

nF V 16 GE C 14 600 V 800 V 10 0 Ciss 8 Coss 10 -1 Crss 0 10 -2 0 10 20 30 40 50 60 70 80 1000510 15 20 25 30 V 40 QGate VCE

Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150°C ICpuls = f (VCE) , Tj = 150°C

parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH parameter: VGE = 15 V 10 2.5 ICsc/I C(90°C) ICpuls/IC 6 1.5 4 1.0 2 0.5 0 0.0 0 200 400 600 800 1000 1200 V 1600 0 200 400 600 800 1000 1200 V 1600 VCE VCE Semiconductor Group 7 Nov-30-1995, Package Outlines Dimensions in mm Weight: Semiconductor Group 8 Nov-30-1995]
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