Download: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUL58D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ STMicroelectronics PREFERRED SALESTYPE ■ NPN TRANSISTOR ■ HIGH VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ LOW BASE-DRIVE REQUIREMENTS ■ VERY HIGH SWITCHING SPEED 3 ■ FULLY CHARACTERISED AT 125oC 21 ■ HIGH RUGGEDNESS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE TO-220 APPLICATIONS ■ ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING INTERNAL SCHEMATIC DIAGRAM ■ SWITCH MODE POWER SUPPLIES DESCRIPTION The BUL58D is manufactured using...
Author: Zając Shared: 8/19/19
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Content

BUL58D

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

■ STMicroelectronics PREFERRED

SALESTYPE

■ NPN TRANSISTOR ■ HIGH VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ LOW BASE-DRIVE REQUIREMENTS ■ VERY HIGH SWITCHING SPEED 3 ■ FULLY CHARACTERISED AT 125oC 21 ■ HIGH RUGGEDNESS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE TO-220

APPLICATIONS

■ ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING INTERNAL SCHEMATIC DIAGRAM ■ SWITCH MODE POWER SUPPLIES

DESCRIPTION

The BUL58D is manufactured using high voltage Multi Epitaxial Planar technology to enhance switching speeds while maintaining a wide RBSOA. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emit ter Voltage (VBE = 0) 800 V VCEO Collector-Emit ter Voltage (IB = 0) 450 V VEBO Emitter-Base Voltage (IC = 0) 9 V IC Collector Current8AICM Collector Peak Current (tp < 5 ms) 16 A IB Base Current4AIBM Base Peak Current (tp < 5 ms) 8 A Ptot Total Dissipation at Tc = 25 oC 85 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC June 2001 1/6,

THERMAL DATA

Rthj-ca se Thermal Resistance Junction-Case Max 1.47 oC/W Rthj- amb Thermal Resistance Junction-Ambient Max 62.5 oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-of f VCE = 800 V 200 µA Current (VBE = 0) VCEO = 800 V Tj = 125 oC 500 µA ICEO Collector Cut-of f VCE = 450 V 200 µA Current (IB = 0) VCEO(sus) Collector-Emit ter IC = 100 mA L = 25 mH 450 V Sustaining Voltage VEBO Emitter-Base Voltage IE = 10 mA9V(IC = 0) VCE(sat )∗ Collector-Emit ter IC = 4 A IB = 0.8 A 1.5 V Saturat ion Voltage IC = 5 A IB = 1A2VVBE(s at)∗ Base-Emitter IC = 4 A IB = 0.8 A 1.3 V Saturat ion Voltage IC = 5 A IB = 1 A 1.5 V hFE∗ DC Current Gain IC = 5 A VCE = 5V5IC = 500 mA VCE = 5 V 38 INDUCTIVE LOAD IC = 2 A IB1 = 0.4 A ts Storage Time VBE(of f) = -5 V RBB = 0Ω11.8 µs tf Fall Time VCL = 250VL= 200 µH 90 180 ns INDUCTIVE LOAD IC = 2 A IB1 = 0.4 A ts Storage Time VBE(of f) = -5 V RBB = 0 Ω 1.5 µs tf Fall Time VCL = 250VL= 200 µH 180 ns Tj = 125 oC Vf Diode Forward Voltage IC = 3A3V∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Areas Derating Curve

2/6, DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Inductive Fall Time Inductive Storage Time 3/6,

Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuit

(1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier 4/6,

TO-220 MECHANICAL DATA

mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10.00 10.40 0.394 0.409 L2 16.40 0.645 L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 M 2.60 0.102 DIA. 3.75 3.85 0.147 0.151

P011CI

5/6, Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6]
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