Download: Order this document SEMICONDUCTOR TECHNICAL DATA by BUL44/D NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device

Order this document SEMICONDUCTOR TECHNICAL DATA by BUL44/D NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device The BUL44/BUL44F have an applications specific state–of–the–art die designed POWER TRANSISTOR for use in 220 V line operated Switchmode Power supplies and electronic light 2.0 AMPERES ballasts. These high voltage/high speed transistors offer the following: 700 VOLTS • Improved Efficiency Due to Low Base Drive Requirements: 40 and 100 WATTS — High and Flat DC Current Gain hFE — Fast Switching — No Coil Required in Base Circuit for Turn–Off...
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Order this document SEMICONDUCTOR TECHNICAL DATA by BUL44/D NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device

The BUL44/BUL44F have an applications specific state–of–the–art die designed POWER TRANSISTOR for use in 220 V line operated Switchmode Power supplies and electronic light 2.0 AMPERES ballasts. These high voltage/high speed transistors offer the following: 700 VOLTS • Improved Efficiency Due to Low Base Drive Requirements: 40 and 100 WATTS — High and Flat DC Current Gain hFE — Fast Switching — No Coil Required in Base Circuit for Turn–Off (No Current Tail) • Full Characterization at 125°C • Tight Parametric Distributions are Consistent Lot–to–Lot • Two Package Choices: Standard TO–220 or Isolated TO–220 • BUL44F, Case 221D, is UL Recognized to 3500 VRMS: File #E69369 MAXIMUM RATINGS Rating Symbol BUL44 BUL44F Unit Collector–Emitter Sustaining Voltage VCEO 400 Vdc Collector–Emitter Breakdown Voltage VCES 700 Vdc Emitter–Base Voltage VEBO 9.0 Vdc BUL44 Collector Current — Continuous IC 2.0 Adc CASE 221A–06 — Peak(1) ICM 5.0 TO–220AB Base Current — Continuous IB 1.0 Adc — Peak(1) IBM 2.0 RMS Isolated Voltage(2) Test No. 1 Per Fig. 22a VISOL — 4500 Volts (for 1 sec, R.H. < 30%, Test No. 2 Per Fig. 22b — 3500 TC = 25°C) Test No. 3 Per Fig. 22c — 1500 Total Device Dissipation (TC = 25°C) PD 50 25 Watts Derate above 25°C 0.4 0.2 W/°C Operating and Storage Temperature TJ, Tstg – 65 to 150 °C THERMAL CHARACTERISTICS Rating Symbol BUL44 BUL44F Unit BUL44F Thermal Resistance — Junction to Case RθJC 2.5 5.0 °C/W CASE 221D–02 — Junction to Ambient RθJA 62.5 62.5 ISOLATED TO–220 TYPE Maximum Lead Temperature for Soldering TL 260 °C UL RECOGNIZED Purposes: 1/8″ from Case for 5 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) VCEO(sus) 400 — — Vdc Collector Cutoff Current (VCE = Rated VCEO, IB = 0) ICEO — — 100 µAdc Collector Cutoff Current (VCE = Rated VCES, VEB = 0) ICES — — 100 µAdc (TC = 125°C) — — 500 Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125°C) — — 100 Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) IEBO — — 100 µAdc (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. (continued) (2) Proper strike and creepage distance must be provided. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1, ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS Base–Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc) VBE(sat) — 0.85 1.1 Vdc (IC = 1.0 Adc, IB = 0.2 Adc) — 0.92 1.25 Collector–Emitter Saturation Voltage VCE(sat) Vdc (IC = 0.4 Adc, IB = 40 mAdc) — 0.20 0.5 (TC = 125°C) — 0.20 0.5 (IC = 1.0 Adc, IB = 0.2 Adc) — 0.25 0.6 (TC = 125°C) — 0.25 0.6 DC Current Gain hFE — (IC = 0.2 Adc, VCE = 5.0 Vdc) 14 — 34 (TC = 125°C) — 32 — (IC = 0.4 Adc, VCE = 1.0 Vdc) 12 20 — (TC = 125°C) 12 20 — (IC = 1.0 Adc, VCE = 1.0 Vdc) 8.0 14 — (TC = 125°C) 7.0 13 — (IC = 10 mAdc, VCE = 5.0 Vdc) 10 22 — DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) fT — 13 — MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) COB — 38 60 pF Input Capacitance (VEB = 8.0 V) CIB — 380 600 pF — 2.5 — (I = 0.4 Adc 1.0 µsC (TC = 125°C) — 2.7 — Dynamic Saturation Voltage: IB1 = 40 mAdc Determined 1.0 µs and VCC = 300 V) 3.0 µ — 1.3 — s (TC = 125°C) — 1.15 — 3.0 µs respectively after VCE(dsat) Vdc rising IB1 reaches 90% of — 3.2 — final I (IC = 1.0 Adc 1.0 µs B1 (TC = 125°C) — 7.5 —IB1 = 0.2 Adc VCC = 300 V) µ — 1.25 —3.0 s (TC = 125°C) — 1.6 — SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs) Turn–On Time (IC = 0.4 Adc, IB1 = 40 mAdc ton — 40 100 ns IB2 = 0.2 Adc, VCC = 300 V) (TC = 125°C) — 40 — Turn–Off Time (IC = 0.4 Adc, IB1 = 40 mAdc toff — 1.5 2.5 µs IB2 = 0.2 Adc, VCC = 300 V) (TC = 125°C) — 2.0 — Turn–On Time (IC = 1.0 Adc, IB1 = 0.2 Adc ton — 85 150 ns IB1 = 0.5 Adc, VCC = 300 V) (TC = 125°C) — 85 — Turn–Off Time (IC = 1.0 Adc, IB1 = 0.2 Adc toff — 1.75 2.5 µs IB2 = 0.5 Adc, VCC = 300 V) (TC = 125°C) — 2.10 — SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH) Fall Time (IC = 0.4 Adc, IB1 = 40 mAdc tfi — 125 200 ns IB2 = 0.2 Adc) (TC = 125°C) — 120 — Storage Time tsi — 0.7 1.25 µs (TC = 125°C) — 0.8 — Crossover Time tc — 110 200 ns (TC = 125°C) — 110 — Fall Time (IC = 1.0 Adc, IB1 = 0.2 Adc tfi — 110 175 ns IB2 = 0.5 Adc) (TC = 125°C) — 120 — Storage Time tsi — 1.7 2.75 µs (TC = 125°C) — 2.25 — Crossover Time tc — 180 300 ns (TC = 125°C) — 210 — Fall Time (IC = 0.8 Adc, IB1 = 160 mAdc tfi 70 — 170 ns IB2 = 160 mAdc) (TC = 125°C) — 180 — Storage Time tsi 2.6 — 3.8 µs (TC = 125°C) — 4.2 — Crossover Time tc — 190 300 ns (TC = 125°C) — 350 — 2 Motorola Bipolar Power Transistor Device Data, r

TYPICAL STATIC CHARACTERISTICS

100 100 VCE = 1 V VCE = 5 V TJ = 125°C TJ = 125°C TJ = 25°C TJ = 25°C TJ = – 20°C 10 10 1.0 1.0 0.01 0.1 1.0 10 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain at 1 Volt Figure 2. DC Current Gain at 5 Volts

2.0 10 TJ = 25°C IC/IB = 10 IC/IB = 5 1.5A2A0.11A0.4 A TJ = 25°C IC = 0.2 A TJ = 125°C 0 0.01 1.0 10 100 1000 0.01 0.1 1.0 10 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (AMPS)

Figure 3. Collector Saturation Region Figure 4. Collector–Emitter Saturation Voltage

1.2 1000 1.1 CIB TJ = 25°C f = 1 MHz 1.0 0.9 0.8

C

T = 25°C OB 0.7 J 0.6 TJ = 125°C 0.5 IC/IB = 5 IC/IB = 10 0.4 1.0 0.01 0.1 1.0 10 1.0 10 100 IC, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 5. Base–Emitter Saturation Region Figure 6. Capacitance Motorola Bipolar Power Transistor Device Data 3

VBE, VOLTAGE (VOLTS) VCE, VOLTAGE (VOLTS) hFE, DC CURRENT GAIN C, CAPACITANCE (pF) VCE, VOLTAGE (VOLTS) hFE, DC CURRENT GAIN,

TYPICAL SWITCHING CHARACTERISTICS

(IB2 = IC/2 for all switching) 300 6.0 IB(off) = IC/2 IB(off) = IC/2 250 VCC = 300 V 5.0 IC/IB = 5 VCC = 300 V PW = 20 µs PW = 20 µs 200 4.0 IC/IB = 10 150 3.0 TJ = 25°C IC/IB = 5 TJ = 125°C 100 2.0 50 TJ = 25°C 1.0 TJ = 125°C IC/IB = 10000.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 7. Resistive Switching, ton Figure 8. Resistive Switching, toff

2500 2.0 IC/IB = 5 IB(off) = IC/2 TJ = 25°C IB(off) = IC/2 VCC = 15 V TJ = 125°C VCC = 15 V 2000 VZ = 300 V VZ = 300 V LC = 200 µH 1.5 LC = 200 µH 1500 IC = 1 A 1000 1.0 TJ = 25°C IC = 0.4 A TJ = 125°C 0 IC/IB = 10 0.5 0.4 0.8 1.2 1.6 2.0 2.4 5.0 6.0 7.0 8.0 9.0 10 11 12 13 14 15 IC, COLLECTOR CURRENT (AMPS) hFE, FORCED GAIN

Figure 9. Inductive Storage Time, tsi Figure 10. Inductive Storage Time

250 200 IB(off) = IC/2 VCC = 15 V 200 VZ = 300 Vtc LC = 200 µH 150 tc tfi 100 tfi IB(off) = IC/2 50 VCC = 15 V VZ = 300 V TJ = 25°C TJ = 25°C LC = 200 µH TJ = 125°C TJ = 125°C0 50 0.4 0.8 1.2 1.6 2.0 2.4 0.4 0.8 1.2 1.6 2.0 2.4 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 11. Inductive Switching, Figure 12. Inductive Switching,

tc and tfi IC/IB = 5 tc and tfi IC/IB = 10 4 Motorola Bipolar Power Transistor Device Data t, TIME (ns) t, TIME (ns) t, TIME (ns) t, TIME (ns) t si , STORAGE TIME (µs) t, TIME (µs),

TYPICAL SWITCHING CHARACTERISTICS

(IB2 = IC/2 for all switching) 170 190 IB(off) = I160 C/2

I

I = 1 A B(off) = IC/2 V CCC = 15 V 170 VCC = 15 V 150 VZ = 300 V VZ = 300 V LC = 200 µH 150 LC = 200 µH 140 IC = 0.4 A 130 130 IC = 0.4 A 120 110 I = 1 A 90 100CT= 25°C 70 TJ = 25°C 90JT= 125°C TJ = 125°CJ 80 50 5.0 6.0 7.0 8.0 9.0 10 11 12 13 14 15 5.0 6.0 7.0 8.0 9.0 10 11 12 13 14 15 hFE, FORCED GAIN hFE, FORCED GAIN Figure 13. Inductive Fall Time Figure 14. Inductive Crossover Time

GUARANTEED SAFE OPERATING AREA INFORMATION

10 2.5 10 µs 1 µs DC (BUL44) 5 ms 1 ms TC ≤ 125°C2.0 GAIN ≥ 4 50 µs Extended LC = 500 µH DC (BUL44F) SOA 1.5 0.1 –5 V 0.5 –1.5V0V0.01 0 10 100 1000 0 100 200 300 400 500 600 700 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 15. Forward Bias Safe Operating Area Figure 16. Reverse Bias Switching Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second break- 1.0 down. Safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation; SECOND BREAK– i.e., the transistor must not be subjected to greater dissipation 0.8 DOWN DERATING than the curves indicate. The data of figure 15 is based on TC = 25°C; TJ(PK) is variable depending on power level. Second 0.6 breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limita- THERMAL DERATING tions do not derate the same as thermal limitations. Allowable 0.4 current at the voltages shown on figure 15 may be found at any case temperature by using the appropriate curve on 0.2 figure 17. TJ(PK) may be calculated from the data in figure 20 and 21. At any case temperatures, thermal limitations will reduce the power than can be handled to values less than the 0 limitations imposed by second breakdown. For inductive 20 40 60 80 100 120 140 160 loads, high voltage and current must be sustained simulta- TC, CASE TEMPERATURE (°C) neously during turn–off with the base–to–emitter junction re- Figure 17. Forward Bias Power Derating verse–biased. The safe level is specified as a reverse– biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Motorola Bipolar Power Transistor Device Data 5 POWER DERATING FACTOR IC, COLLECTOR CURRENT (AMPS) t fi, FALL TIME (ns) IC, COLLECTOR CURRENT (AMPS) tc, CROSSOVER TIME (ns), 5 10

VCE

4 9 IC 90% ICt3dyn 1 µs 8 fi tsi 2 7dyn 3 µs16tc 10% IC05VCLAMP 10% VCLAMP –1 4 90% I –2B3IB 90% IB1 –3 1 µs 2 –4 3 µs 1

IB

–500123TIM4E5678012345678

TIME Figure 18. Dynamic Saturation Voltage Measurements Figure 19. Inductive Switching Measurements

+15 V IC PEAK 1 µF 100 µF100 Ω MTP8P10 150Ω3WVCE PEAK3 W MTP8P10 VCE MPF930 RB1 MUR105 IB1 +10 V MPF930 Iout IB

A

IB2 50ΩRMJE210 B2 COMMON V(BR)CEO(sus) INDUCTIVE SWITCHING RBSOA

Ω MTP12N10150 L = 10 mH L = 200 µH L = 500 µH

500 µF3WRB2 = ∞ RB2 = 0 RB2 = 0 VCC = 20 VOLTS VCC = 15 VOLTS VCC = 15 VOLTS 1 µF IC(pk) = 100 mA RB1 SELECTED FOR RB1 SELECTED DESIRED IB1 FOR DESIRED IB1 –Voff

Table 1. Inductive Load Switching Drive Circuit

6 Motorola Bipolar Power Transistor Device Data

VOLTS

,

TYPICAL THERMAL RESPONSE

1.0 0.5 0.2 0.01 0.1 0.05 0.01 R = r(t) R P θJC(t) θJC(pk) 0.02 D CURVES APPLY FOR t POWER PULSE TRAIN1 SHOWN READ TIME AT t1 SINGLE PULSE t2 TJ(pk) – TC = P(pk) RθJC1(t) DUTY CYCLE, D = t1/t2 0.01 0.01 0.1 1.0 10 100 1000 t, TIME (ms)

Figure 20. Typical Thermal Response (ZθJC(t)) for BUL44

0.5 0.2 0.1 0.1 0.05RPθJC(t) = r(t) RθJC (pk) D CURVES APPLY FOR POWER PULSE TRAIN t1 SHOWN READ TIME AT t1 t2 TJ(pk) – TC = P(pk) RθJC1(t) DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.1 1.0 10 100 1000 t, TIME (ms)

Figure 21. Typical Thermal Response (ZθJC(t)) for BUL44F Motorola Bipolar Power Transistor Device Data 7

r(t) TRANSIENT THERMAL r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) RESISTANCE (NORMALIZED),

TEST CONDITIONS FOR ISOLATION TESTS*

MOUNTED MOUNTED MOUNTED CLIP FULLY ISOLATED FULLY ISOLATED FULLY ISOLATEDCLIP PACKAGE PACKAGE 0.107″ MIN PACKAGE 0.107″ MIN LEADS LEADS LEADS HEATSINK HEATSINK HEATSINK 0.110″ MIN Figure 22a. Screw or Clip Mounting Position Figure 22b. Clip Mounting Position Figure 22c. Screw Mounting Position for Isolation Test Number 1 for Isolation Test Number 2 for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together.

MOUNTING INFORMATION**

4–40 SCREW CLIP PLAIN WASHER

HEATSINK

COMPRESSION WASHER NUT HEATSINK Figure 23a. Screw–Mounted Figure 23b. Clip–Mounted Figure 23. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. 8 Motorola Bipolar Power Transistor Device Data,

PACKAGE DIMENSIONS

NOTES: –T– SEATINGPLANE 1. DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.

BFC2. CONTROLLING DIMENSION: INCH. T 3. DIMENSION Z DEFINES A ZONE WHERE ALLS BODY AND LEAD IRREGULARITIES ARE

ALLOWED. INCHES MILLIMETERS

Q A DIM MIN MAX MIN MAXA 0.570 0.620 14.48 15.75

123UB0.380 0.405 9.66 10.28C 0.160 0.190 4.07 4.82

H D 0.025 0.035 0.64 0.88

F 0.142 0.147 3.61 3.73

K G 0.095 0.105 2.42 2.66 Z H 0.110 0.155 2.80 3.93

J 0.018 0.025 0.46 0.64 STYLE 1: K 0.500 0.562 12.70 14.27

L R PIN 1. BASE L 0.045 0.060 1.15 1.522. COLLECTOR N 0.190 0.210 4.83 5.33 V J 3. EMITTER Q 0.100 0.120 2.54 3.044. COLLECTOR R 0.080 0.110 2.04 2.79 G S 0.045 0.055 1.15 1.39

T 0.235 0.255 5.97 6.47

D U 0.000 0.050 0.00 1.27 N V 0.045 ––– 1.15 –––

Z ––– 0.080 ––– 2.04

BUL44 CASE 221A–06 TO–220AB ISSUE Y

–T– SEATINGPLANE –B– C NOTES:

F 1. DIMENSIONING AND TOLERANCING PER ANSI S Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

Q U INCHES MILLIMETERS A DIM MIN MAX MIN MAX

A 0.621 0.629 15.78 15.97123B0.394 0.402 10.01 10.21 C 0.181 0.189 4.60 4.80

H STYLE 2: D 0.026 0.034 0.67 0.86

–Y– PIN 1. BASE F 0.121 0.129 3.08 3.27K 2. COLLECTOR G 0.100 BSC 2.54 BSC 3. EMITTER H 0.123 0.129 3.13 3.27 J 0.018 0.025 0.46 0.64

G K 0.500 0.562 12.70 14.27J L 0.045 0.060 1.14 1.52 NRN0.200 BSC 5.08 BSC L Q 0.126 0.134 3.21 3.40R 0.107 0.111 2.72 2.81 D 3 PL S 0.096 0.104 2.44 2.64

U 0.259 0.267 6.58 6.78 0.25 (0.010) MBMY

BUL44F CASE 221D–02

(ISOLATED TO–220 TYPE)

ISSUE D Motorola Bipolar Power Transistor Device Data 9

, Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: email is hidden – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 10 Motorola Bipolar Power Transistor Device Data ◊ BUL44/D]
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GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK445 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain current (DC) 21
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK445 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK445 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK444 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK443 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT186 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK442 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC
DESCRIPTION QUICK REFERENCE DATA APPLICATIONS
DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 1.6A5pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLICATIONS VBG Continu
DESCRIPTION QUICK REFERENCE DATA APPLICATIONS
DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 9A5pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLICATIONS VBG Continuou
DESCRIPTION QUICK REFERENCE DATA APPLICATIONS
DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 9A5pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLICATIONS VBG Continuou
DESCRIPTION QUICK REFERENCE DATA APPLICATIONS
DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 3.5A5pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLICATIONS VBG Continu
DESCRIPTION QUICK REFERENCE DATA APPLICATIONS
DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 3.5A5pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLICATIONS VBG Continu
DESCRIPTION QUICK REFERENCE DATA APPLICATIONS
DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX. UNIT level power MOSFET in a surface mount plastic envelope, intended as VDS Continuous drain source voltage 50Vageneral purpose switch for automotive systems and other ID Continuous drain current 0.5 A applic
DESCRIPTION QUICK REFERENCE DATA APPLICATIONS
DESCRIPTION QUICK REFERENCE DATA Monolithic overload protected logic SYMBOL PARAMETER MAX. UNIT level power MOSFET in a surface mount plastic envelope, intended as VDS Continuous drain source voltage 50Vageneral purpose switch for automotive systems and other ID Continuous drain current 0.5 A applic
DESCRIPTION QUICK REFERENCE DATA APPLICATIONS VIS = 5 V 35 mΩ
DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET ina5pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 50 A purpose switch for automotive Ptot Total power
DESCRIPTION QUICK REFERENCE DATA APPLICATIONS VIS = 5 V 125 mΩ
DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET ina5pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 15 A purpose switch for automotive Ptot Total power
DESCRIPTION QUICK REFERENCE DATA APPLICATIONS VIS = 10 V
DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected power MOSFET ina3pin plastic envelope, intended VDS Continuous drain source voltage 50 V as a general purpose switch for ID Continuous drain current 50 A automotive systems and other PD Total po