Download: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUL310 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ STMicroelectronics PREFERRED SALESTYPE ■ NPN TRANSISTOR ■ HIGH VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED ■ FULLY CHARACTERISED AT 125oC 3 ■ LARGE RBSOA 21 APPLICATIONS ■ ELECTRONIC BALLASTS FOR TO-220 FLUORESCENT LIGHTING ■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The device is manufactured using high voltage INTERNAL SCHEMATIC DIAGRAM Multi Epitaxial Planar technology for high switching speeds and high voltage capab...
Author: Zając Shared: 8/19/19
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Content

BUL310

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

■ STMicroelectronics PREFERRED

SALESTYPE

■ NPN TRANSISTOR ■ HIGH VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED ■ FULLY CHARACTERISED AT 125oC 3 ■ LARGE RBSOA 21

APPLICATIONS

■ ELECTRONIC BALLASTS FOR TO-220 FLUORESCENT LIGHTING ■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS

DESCRIPTION

The device is manufactured using high voltage INTERNAL SCHEMATIC DIAGRAM Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) 1000 V VCEO Collector-Emitter Voltage (IB = 0) 500 V VEBO Emitter-Base Voltage (IC = 0) 9 V IC Collector Current5VICM Collector Peak Current (tp <5 ms) 10 A IB Base Current3AIBM Base Peak Current (tp <5 ms) 4 A Ptot Total Dissipation at Tc = 25 oC 75 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operat ing Junction Temperature 150 oC July 2000 1/6,

THERMAL DATA

Rthj-ca se Thermal Resistance Junction-Case Max 1.65 oC/W Rthj- amb Thermal Resistance Junction-Ambient Max 62.5 oC/W

ELECTRICAL CHARACTERISTICS (T = 25 ocase C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-of f VCE = 1000 V 100 µA Current (VBE = 0) V o CE = 1000 V Tj = 125 C 500 µA ICEO Collector Cut-of f VCE = 500 V 250 µA Current (IB = 0) VCEO(sus )∗ Collector-Emit ter IC = 100 mA L= 25 mH 500 V Sustaining Voltage (IB = 0) VEBO Emitter-Base Voltage IE = 10 mA9V(IC = 0) VCE(sat )∗ Collector-Emit ter IC = 1 A IB = 0.2 A 0.5 V Saturat ion Voltage IC = 2 A IB = 0.4 A 0.7 V IC = 3 A IB = 0.6 A 1.1 V VBE(s at)∗ Base-Emitter IC = 1 A IB = 0.2A1VSaturat ion Voltage IC = 2 A IB = 0.4 A 1.1 V IC = 3 A IB = 0.6 A 1.2 V hFE∗ DC Current Gain IC = 10 mA VCE = 5 V 10 IC = 3 A VCE = 2.5 V 10 INDUCTIVE LOAD IC = 2 A IB1 = 0.4 A ts Storage Time VBE(of f) = -5 V RBB = 0 Ω 1.2 1.9 µs tf Fall Time VCL = 250VL= 200 µH 80 160 ns INDUCTIVE LOAD IC = 2 A IB1 = 0.4 A ts Storage Time VBE(of f) = -5V RBB = 0 Ω 1.8 µs tf Fall Time VCL = 250VL= 200 µH 150 ns Tj = 125 oC ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Areas Derating Curve

2/6, DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Inductive Fall Time Inductive Storage Time 3/6,

Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuit

(1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier 4/6,

TO-220 MECHANICAL DATA

mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151

P011C

5/6, Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6]
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