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GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 43 A Automotive applications, Switched Ptot Total power dissipation 125 W Mode Power Supplies (SMPS), Tj Junction temperature 175 ˚C motor control, welding, DC/DC and RDS(ON) Drain-source on-state 34 mΩ AC/DC converters, and in general resistance purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 draing3source...
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GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 43 A Automotive applications, Switched Ptot Total power dissipation 125 W Mode Power Supplies (SMPS), Tj Junction temperature 175 ˚C motor control, welding, DC/DC and RDS(ON) Drain-source on-state 34 mΩ AC/DC converters, and in general resistance purpose switching applications.

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PIN DESCRIPTION d tab 1 gate 2 draing3source tab drain123s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 60 V VDGR Drain-gate voltage RGS = 20 kΩ - 60 V ±VGS Gate-source voltage - - 30 V ID Drain current (DC) Tmb = 25 ˚C - 43 A ID Drain current (DC) Tmb = 100 ˚C - 31 A IDM Drain current (pulse peak value) Tmb = 25 ˚C - 172 A Ptot Total power dissipation Tmb = 25 ˚C - 125 W Tstg Storage temperature - - 55 175 ˚C Tj Junction Temperature - - 175 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-mb Thermal resistance junction to - 1.2 K/W mounting base Rth j-a Thermal resistance junction to 60 - K/W ambient August 1994 1 Rev 1.000,

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS Drain-source breakdown VGS = 0 V; ID = 0.25 mA 60 - - V voltage VGS(TO) Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V IDSS Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA IDSS Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA IGSS Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA RDS(ON) Drain-source on-state VGS = 10 V; ID = 20 A - 24 34 mΩ resistance

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT gfs Forward transconductance VDS = 25 V; ID = 20A813.5 - S Ciss Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1000 1600 pF Coss Output capacitance - 470 600 pF Crss Feedback capacitance - 180 275 pF td on Turn-on delay time VDD = 30 V; ID = 3 A; - 25 40 ns tr Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 60 90 ns td off Turn-off delay time Rgen = 50 Ω - 125 160 ns tf Turn-off fall time - 100 130 ns Ld Internal drain inductance Measured from contact screw on - 3.5 - nH tab to centre of die Ld Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die Ls Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IDR Continuous reverse drain - - - 43 A current IDRM Pulsed reverse drain current - - - 172 A VSD Diode forward voltage IF = 43 A ; VGS = 0 V - 0.95 2.0 V trr Reverse recovery time IF = 43 A; -dIF/dt = 100 A/µs; - 60 - ns Qrr Reverse recovery charge VGS = 0 V; VR = 30 V - 0.30 - µC

AVALANCHE LIMITING VALUE

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT WDSS Drain-source non-repetitive ID = 43 A ; VDD ≤ 25 V ; - - 100 mJ unclamped inductive turn-off VGS = 10 V ; RGS = 50 Ω energy August 1994 2 Rev 1.000, PD% Normalised Power Derating 120 Zth j-mb / (K/W) BUKx55-lv10 90 D =1 80 0.5 70 0.2 60 0.1 0.1 50 0.05 0.02 30 0.01 p0 PD tp D = tTTt00.001 0 20 40 60 80 100 120 140 160 180 1E-07 1E-05 1E-03 1E-01 1E+01 Tmb / C t / s

Fig.1. Normalised power dissipation. Fig.4. Transient thermal impedance. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) Zth j-mb = f(t); parameter D = tp/T

ID% Normalised Current Derating ID / A BUK4Y5-60H 120 100 110 15 10 9 100 20 VGS / V = 8 70 60 7 60 6.5 50 40 6 5.5 20 20 5 10400020 40 60 80 100 120 140 160 1800246810 Tmb / C VDS / V

Fig.2. Normalised continuous drain current. Fig.5. Typical output characteristics, Tj = 25 ˚C. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V ID = f(VDS); parameter VGS

ID / A BUK455-60H RDS(ON) / Ohm BUK4Y5-60H 1000 0.2 4.5 5 5.5 6 6.5 /IDS VD tp = 0.15 = VGS / V = 8100 ) ON 10 us(

RD S

100 us 0.1 10 1 ms 10 DC 90.05 10 ms 100 ms10110 100 0 20 40 60 80 100 VDS / V ID / A

Fig.3. Safe operating area. Tmb = 25 ˚C Fig.6. Typical on-state resistance, Tj = 25 ˚C. ID & IDM = f(VDS); IDM single pulse; parameter tp RDS(ON) = f(ID); parameter VGS August 1994 3 Rev 1.000

, ID / A BUK4Y5-60H VGS(TO) / V max. typ. min. 20 Tj / C = -40000246810 12 -60 -20 20 60 100 140 180 VGS / V Tj / C

Fig.7. Typical transfer characteristics. Fig.10. Gate threshold voltage. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

gfs / S BUK4Y5-60H ID / A SUB-THRESHOLD CONDUCTION 30 1E-01 25 1E-02 20 2 % typ 1E-03 98 % 1E-04 Tj / C = 1E-05 5 -40 0 1E-06 0 20 40 60 80 10001234ID / A VGS / V

Fig.8. Typical transconductance, Tj = 25 ˚C. Fig.11. Sub-threshold drain current.

gfs = f(ID); conditions: VDS = 10 V ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS a Normalised RDS(ON) = f(Tj) C / pF BUK4Y5-60H 2.0 10000 Ciss Coss Crss 1.5 1.0 1000 0.5 0 100 -60 -20 20 60 100 140 180 0.1 1 10 100 Tj / C VDS / V

Fig.9. Normalised drain-source on-state resistance. Fig.12. Typical capacitances, Ciss, Coss, Crss.

a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 20 A; VGS = 5VC= f(VDS); conditions: VGS = 0 V; f = 1 MHz

August 1994 4 Rev 1.000

, VGS / V BUK4Y5-60H WDSS% 20 120 15 90 VDD / V = 12 80 48 70 10 60 5 3000010 20 30 40 50 60 20 40 60 80 100 120 140 160 180 QG / nC Tmb / C Fig.13. Typical turn-on gate-charge characteristics. Fig.15. Normalised avalanche energy rating. VGS = f(QG); conditions: ID = 43 A; parameter VDS WDSS% = f(Tmb); conditions: ID = 43 A IS / A BUKXY5-60H Tj / C = VDD -40 + 80 25 L150

VDS

60 -

VGS

-ID/100 0 T.U.T. 20 R 01

RGS

shunt 0 0.5 1 1.5 VSDS / V Fig.16. Avalanche energy test circuit. Fig.14. Typical reverse diode current. 2 IF = f(VSDS); conditions: VGS = 0 V; parameterTW= 0.5 ⋅ LI ⋅ BV /(BVj DSS D DSS DSS − VDD) August 1994 5 Rev 1.000, MECHANICAL DATA Dimensions in mm 4,5 Net Mass: 2 g max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max123(2x) 0,9 max (3x) 0,6 2,54 2,54 2,4 Fig.17. TO220AB; pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Accessories supplied on request: refer to mounting instructions for TO220 envelopes. 3. Epoxy meets UL94 V0 at 1/8". August 1994 6 Rev 1.000,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1994 7 Rev 1.000]
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