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GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK452 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC) 11 10 A (SMPS), motor control, welding, Ptot Total power dissipation 60 60 W DC/DC and AC/DC converters, and Tj Junction temperature 175 175 ˚C in general purpose switching RDS(ON) Drain-source on-state 0.25 0.3 Ω applications. resistance PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 ga...
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GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK452 -100A -100B The device is intended for use in VDS Drain-source voltage 100 100 V Switched Mode Power Supplies ID Drain current (DC) 11 10 A (SMPS), motor control, welding, Ptot Total power dissipation 60 60 W DC/DC and AC/DC converters, and Tj Junction temperature 175 175 ˚C in general purpose switching RDS(ON) Drain-source on-state 0.25 0.3 Ω applications. resistance

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PIN DESCRIPTION d tab 1 gate 2 draing3source tab drain123s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 100 V VDGR Drain-gate voltage RGS = 20 kΩ - 100 V ±VGS Gate-source voltage - - 30 V -100A -100B ID Drain current (DC) Tmb = 25 ˚C - 11 10 A ID Drain current (DC) Tmb = 100 ˚C - 7.77AIDM Drain current (pulse peak value) Tmb = 25 ˚C - 44 40 A Ptot Total power dissipation Tmb = 25 ˚C - 60 W Tstg Storage temperature - - 55 175 ˚C Tj Junction Temperature - - 175 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-mb Thermal resistance junction to - - 2.5 K/W mounting base Rth j-a Thermal resistance junction to - 60 - K/W ambient April 1993 1 Rev 1.100,

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS Drain-source breakdown VGS = 0 V; ID = 0.25 mA 100 - - V voltage VGS(TO) Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V IDSS Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA IDSS Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA IGSS Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA RDS(ON) Drain-source on-state VGS = 10 V; BUK452-100A - 0.22 0.25 Ω resistance ID = 5.5 A BUK452-100B - 0.25 0.3 Ω

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT gfs Forward transconductance VDS = 25 V; ID = 5.5A34.2 - S Ciss Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 400 500 pF Coss Output capacitance - 90 120 pF Crss Feedback capacitance - 35 50 pF td on Turn-on delay time VDD = 30 V; ID = 3 A; - 9 14 ns tr Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 25 40 ns td off Turn-off delay time Rgen = 50 Ω - 30 45 ns tf Turn-off fall time - 20 40 ns Ld Internal drain inductance Measured from contact screw on - 3.5 - nH tab to centre of die Ld Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die Ls Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IDR Continuous reverse drain - - - 11 A current IDRM Pulsed reverse drain current - - - 44 A VSD Diode forward voltage IF = 11 A ; VGS = 0 V - 1.2 1.5 V trr Reverse recovery time IF = 11 A; -dIF/dt = 100 A/µs; - 90 - ns Qrr Reverse recovery charge VGS = 0 V; VR = 30 V - 0.35 - µC

AVALANCHE LIMITING VALUE

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT WDSS Drain-source non-repetitive ID = 11 A ; VDD ≤ 50 V ; - - 35 mJ unclamped inductive turn-off VGS = 10 V ; RGS = 50 Ω energy April 1993 2 Rev 1.100, PD% Normalised Power Derating 120 Zth j-mb / (K/W) BUKX521E+01 80 1E+00 0.5 70 0.2 60 0.1 50 0.05 40 1E-01 0.02 30 PD tppD= tT 20 0 10Tt01E-02 0 20 40 60 80 100 120 140 160 180 1E-07 1E-05 1E-03 1E-01 1E+01 Tmb / C t / s

Fig.1. Normalised power dissipation. Fig.4. Transient thermal impedance. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) Zth j-mb = f(t); parameter D = tp/T

ID% Normalised Current Derating 120 ID / A BUK452-100A20 20 110 15 100 VGS / V = 10 8 90 15 70 7 60 10 40 6 30 5 20 5 10400020 40 60 80 100 120 140 160 1800246810 Tmb / C VDS / V

Fig.2. Normalised continuous drain current. Fig.5. Typical output characteristics, Tj = 25 ˚C. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V ID = f(VDS); parameter VGS

ID / A BUK452-100 RDS(ON) / Ohm BUK452-100A 100 1.0

A D

S/I = VD B 4.5 5 5.5 6 6.5 VGS / V =

ON

) 0.8 ( 7 7.5

RD

S tp = 10 us 10 8 100 us 0.6 10 DC 1 ms 0.4 1 10 ms 20 100 ms 0.2 0.10110 1000246810 12 14 16 18 20 VDS / V ID / A

Fig.3. Safe operating area. Tmb = 25 ˚C Fig.6. Typical on-state resistance, Tj = 25 ˚C. ID & IDM = f(VDS); IDM single pulse; parameter tp RDS(ON) = f(ID); parameter VGS April 1993 3 Rev 1.100

, ID / A BUK452-100A VGS(TO) / V max. 20 4 Tj / C = 25 16 typ. 12 min. 000246810 -60 -20 20 60 100 140 180 VGS / V Tj / C

Fig.7. Typical transfer characteristics. Fig.10. Gate threshold voltage. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

gfs / S BUK452-100A ID / A SUB-THRESHOLD CONDUCTION 5 1E-01 4 1E-02 2 % 3 1E-03 typ 98 % 2 1E-04 1 1E-05 0 1E-060246810 12 14 16 1801234ID / A VGS / V

Fig.8. Typical transconductance, Tj = 25 ˚C. Fig.11. Sub-threshold drain current.

gfs = f(ID); conditions: VDS = 25 V ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS a Normalised RDS(ON) = f(Tj) 2.4 C / pF BUK4y2-10010000 2.2 2.0 1.8 1.6 1000 1.4 1.2 Ciss 1.0 0.8 100 0.6 Coss 0.4 Crss 0.2 0 10 -60 -20 20 60 100 140 180 0 20 40 Tj / C VDS / V

Fig.9. Normalised drain-source on-state resistance. Fig.12. Typical capacitances, Ciss, Coss, Crss.

a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 5.5 A; VGS = 10VC= f(VDS); conditions: VGS = 0 V; f = 1 MHz

April 1993 4 Rev 1.100

, VGS / V BUK452-100 WDSS% 12 120 10 VDS / V =20 100 8 80 6 60 4 40 2 20000246810 20 40 60 80 100 120 140 160 180 QG / nC Tmb / C Fig.13. Typical turn-on gate-charge characteristics. Fig.15. Normalised avalanche energy rating. VGS = f(QG); conditions: ID = 11 A; parameter VDS WDSS% = f(Tmb); conditions: ID = 11 A IF / A BUK452-100A + VDD

L VDS

-

VGS

-ID/100 0 T.U.T. Tj / C = 150 25 R 01

RGS

shunt012VSDS / V Fig.16. Avalanche energy test circuit. Fig.14. Typical reverse diode current. 2 IF = f(VSDS); conditions: VGS = 0 V; parameter T

W

j DSS = 0.5 ⋅ LID ⋅ BVDSS/(BVDSS − VDD) April 1993 5 Rev 1.100, MECHANICAL DATA Dimensions in mm 4,5 Net Mass: 2 g max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max123(2x) 0,9 max (3x) 0,6 2,54 2,54 2,4 Fig.17. TO220AB; pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Accessories supplied on request: refer to mounting instructions for TO220 envelopes. 3. Epoxy meets UL94 V0 at 1/8". April 1993 6 Rev 1.100,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1993 7 Rev 1.100]
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