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GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK445 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 7.67A(SMPS), motor control, welding, Ptot Total power dissipation 30 30 W DC/DC and AC/DC converters, and Tj Junction temperature 150 150 ˚C in general purpose switching RDS(ON) Drain-source on-state 0.23 0.28 Ω applications. resistance PINNING - SOT186 PIN CONFIGURATION SYMBOL PIN DESCRIPTION d c...
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GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK445 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 7.67A(SMPS), motor control, welding, Ptot Total power dissipation 30 30 W DC/DC and AC/DC converters, and Tj Junction temperature 150 150 ˚C in general purpose switching RDS(ON) Drain-source on-state 0.23 0.28 Ω applications. resistance

PINNING - SOT186 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION d case 1 gate 2 draing3source case isolated123s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 200 V VDGR Drain-gate voltage RGS = 20 kΩ - 200 V ±VGS Gate-source voltage - - 30 V -200A -200B ID Drain current (DC) Ths = 25 ˚C - 7.67AID Drain current (DC) Ths = 100 ˚C - 4.8 4.4 A IDM Drain current (pulse peak value) Ths = 25 ˚C - 30 28 A Ptot Total power dissipation Ths = 25 ˚C - 30 W Tstg Storage temperature - - 55 150 ˚C Tj Junction Temperature - - 150 ˚C

THERMAL RESISTANCES

Rth j-hs Thermal resistance junction to with heatsink compound - - 4.17 K/W Rth j-a Thermal resistance junction to - 55 - K/W ambient April 1993 1 Rev 1.100,

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS Drain-source breakdown VGS = 0 V; ID = 0.25 mA 200 - - V voltage VGS(TO) Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V IDSS Zero gate voltage drain current VDS = 200 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA IDSS Zero gate voltage drain current VDS = 200 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA IGSS Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA RDS(ON) Drain-source on-state VGS = 10 V; BUK445-200A - 0.2 0.23 Ω resistance ID = 7 A BUK445-200B - 0.22 0.28 Ω

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT gfs Forward transconductance VDS = 25 V; ID = 7A68.4 - S Ciss Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1400 1750 pF Coss Output capacitance - 190 250 pF Crss Feedback capacitance - 55 80 pF td on Turn-on delay time VDD = 30 V; ID = 3 A; - 18 30 ns tr Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 35 60 ns td off Turn-off delay time Rgen = 50 Ω - 85 120 ns tf Turn-off fall time - 35 50 ns Ld Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die Ls Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad

ISOLATION

Ths = 25 ˚C unless otherwise specified Visol Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - - 1500 V three terminals to external Cisol Capacitance from T2 to external f = 1 MHz - 12 - pF

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified IDR Continuous reverse drain - - - 7.6 A current IDRM Pulsed reverse drain current - - - 30 A VSD Diode forward voltage IF = 7.6 A ; VGS = 0 V - 1.0 1.5 V trr Reverse recovery time IF = 7.6 A; -dIF/dt = 100 A/µs; - 150 - ns Qrr Reverse recovery charge VGS = 0 V; VR = 30 V - 1.3 - µC April 1993 2 Rev 1.100,

AVALANCHE LIMITING VALUE Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT WDSS Drain-source non-repetitive ID = 14 A ; VDD ≤ 100 V ; - - 100 mJ

unclamped inductive turn-off VGS = 10 V ; RGS = 50 Ω energy PD% Normalised Power Derating ID / A120 BUK445-200A,B100 with heatsink compound

ID

100 S/ A

V D

= B tp = 10 us90

ON

) ( 80 10 SRD 70 100 us 1 ms 40 1 DC 10 ms 30 100 ms 0 0.1 0 20 40 60 80 100 120 140 1 10 100 1000 Ths / C VDS / V

Fig.1. Normalised power dissipation. Fig.3. Safe operating area. Ths = 25 ˚C PD% = 100⋅PD/PD 25 ˚C = f(Ths) ID & IDM = f(VDS); IDM single pulse; parameter tp

ID% Normalised Current Derating Zth / (K/W) BUKx45-lv 120 10 with heatsink compound 110 D = 100 0.5 90 1 0.2 80 0.1 70 0.05 60 0.1 0.02 30 0.01 P tp D = tp0DTTt00.001 0 20 40 60 80 100 120 140 1E-07 1E-05 1E-03 1E-01 1E+01 Ths / C t / s

Fig.2. Normalised continuous drain current. Fig.4. Transient thermal impedance. ID% = 100⋅ID/ID 25 ˚C = f(Ths); conditions: VGS ≥ 10 V Zth j-hs = f(t); parameter D = tp/T April 1993 3 Rev 1.100

, ID / A BUK455-200A gfs / S BUK455-200A 30 15 VGS / V = 20 10 6 20 10 105000246810 12 14 16 18 2004812 16 20 24 28 VDS / V ID / A Fig.5. Typical output characteristics, Tj = 25 ˚C. Fig.8. Typical transconductance, Tj = 25 ˚C. ID = f(VDS); parameter VGS gfs = f(ID); conditions: VDS = 25 V RDS(ON) / Ohm BUK455-200A a Normalised RDS(ON) = f(Tj) 1.0 2.4 2.2 4 4.5 5 5.5 2.0 0.8 6 1.8 1.6 0.6 1.4 8 1.2 0.4 1.0 10 0.8 0.6 0.2 VGS / V = 20 0.4 0.20004812 16 20 24 28 -60 -40 -20 0 20 40 60 80 100 120 140 ID / A Tj / C Fig.6. Typical on-state resistance, Tj = 25 ˚C. Fig.9. Normalised drain-source on-state resistance. RDS(ON) = f(ID); parameter VGS a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 7 A; VGS = 10 V ID / A BUK455-200A VGS(TO) / V max. 20 typ. min. 1228Tj / C = 150000246810 -60 -40 -20 0 20 40 60 80 100 120 140 VGS / V Tj / C Fig.7. Typical transfer characteristics. Fig.10. Gate threshold voltage. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS April 1993 4 Rev 1.100, ID / A SUB-THRESHOLD CONDUCTION 1E-01 IF / A BUK455-200A30 1E-02 2 % typ 98 % 20 1E-03 Tj / C = 150 25 1E-04 1E-05 1E-06001234012VGS / V VSDS / V Fig.11. Sub-threshold drain current. Fig.14. Typical reverse diode current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS IF = f(VSDS); conditions: VGS = 0 V; parameter Tj C / pF BUK4y5-200 WDSS% 10000 120 Ciss 1000 80 Coss 100 40 Crss 100020 40 20 40 60 80 100 120 140 VDS / V Ths / C Fig.12. Typical capacitances, Ciss, Coss, Crss. Fig.15. Normalised avalanche energy rating. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz WDSS% = f(Ths); conditions: ID = 14 A VGS / V BUK455-20012 + VDD 10 VDS / V =40L8VDS 160 - 6 VGS -ID/10040T.U.T. R 01

RGS

1 shunt 0 10 20 30 QG / nC Fig.13. Typical turn-on gate-charge characteristics. Fig.16. Avalanche energy test circuit. V = f(Q ); conditions: I = 14 A; parameter V WDSS = 0.5 ⋅ LI D ⋅ BVDSS/(BVGSGDDS DSS − VDD) April 1993 5 Rev 1.100,

MECHANICAL DATA

Dimensions in mm 10.2 Net Mass: 2 g max 5.7 4.4 max 0.9 max 3.2 0.5 3.0 2.9 max 4.4 4.0 7.9 7.5 seating max plane 3.5 max not tinned 4.4 13.5 min1230.4 M 0.9 0.7 0.55 max 2.54 1.3 5.08 top view Fig.17. SOT186; The seating plane is electrically isolated from all terminals. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Accessories supplied on request: refer to mounting instructions for F-pack envelopes. 3. Epoxy meets UL94 V0 at 1/8". April 1993 6 Rev 1.100,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1993 7 Rev 1.100]
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