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DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 1.6A5pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLICATIONS VBG Continuous off-state supply voltage 50 V General controller for driving IL Continuous load current4Alamps, motors, solenoids, heaters. Tj Continuous junction temperature 150 ˚C RON On-state resistance 220 mΩ FEATURES FUNCTIONAL BLOCK DIAGRAM Vertical power DMOS switch Low on-state resistance5Vlogic compati...
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DESCRIPTION QUICK REFERENCE DATA

Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 1.6A5pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT

APPLICATIONS

VBG Continuous off-state supply voltage 50 V General controller for driving IL Continuous load current4Alamps, motors, solenoids, heaters. Tj Continuous junction temperature 150 ˚C RON On-state resistance 220 mΩ

FEATURES FUNCTIONAL BLOCK DIAGRAM

Vertical power DMOS switch Low on-state resistance5Vlogic compatible input BATT Overtemperature protection - self resets with hysteresis STATUS Overload protection against short circuit load with POWER output current limiting; MOSFET latched - reset by input INPUT High supply voltage load CONTROL & protection Supply undervoltage lock out PROTECTION Status indication for overload CIRCUITS protection activated Diagnostic status indication of open circuit load LOAD Very low quiescent current Voltage clamping for turn off of GROUND RG inductive loads ESD protection on all pins Reverse battery and overvoltage protection Fig.1. Elements of the TOPFET HSS with internal ground resistor.

PINNING - SOT263 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION tab 1 Ground

B

2 Input I TOPFETL3Battery (+ve supply) S HSS12345G4Status leadform 263-01 5 Load Fig. 2. Fig. 3. tab connected to pin 3 April 1995 1 Rev 1.100,

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Battery voltages VBG Continuous off-state supply voltage - 0 50 V Reverse battery voltages1 External resistors: -VBG Repetitive peak supply voltage RI = RS ≥ 4.7 kΩ, δ ≤ 0.1 - 32 V -VBG Continuous reverse supply voltage RI = RS ≥ 4.7 kΩ - 16 V IL Continuous load current Tmb ≤ 110 ˚C - 4 A PD Total power dissipation Tmb ≤ 25 ˚C - 50 W Tstg Storage temperature - -55 175 ˚C Tj Continuous junction temperature 2 - - 150 ˚C Tsold Lead temperature during soldering - 250 ˚C Input and status II Continuous input current - -5 5 mA IS Continuous status current - -5 5 mA II Repetitive peak input current δ ≤ 0.1 -20 20 mA IS Repetitive peak status current δ ≤ 0.1 -20 20 mA Inductive load clamping EBL Non-repetitive clamping energy Tmb = 150 ˚C prior to turn-off - 1.4 J

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VC Electrostatic discharge capacitor Human body model; - 2 kV voltage C = 250 pF; R = 1.5 kΩ

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Thermal resistance3 Rth j-mb Junction to mounting base - - 2 2.5 K/W Rth j-a Junction to ambient in free air - 60 75 K/W 1 Reverse battery voltage is allowed only with external input and status resistors to limit the currents to a safe value. 2 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 3 Of the output Power MOS transistor. April 1995 2 Rev 1.100,

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Clamping voltages VBG Battery to ground IG = 1 mA 50 55 65 V VBL Battery to load IL = IG = 1 mA 50 55 65 V -VLG Negative load to ground IL = 1 mA 12 17 21 V Supply voltage battery to ground VBG Operating range 1 - 5 - 40 V Currents VBG = 13 V IL Nominal load current 2 VBL = 0.5 V; Tmb = 85 ˚C 1.6 - - A IB Quiescent current 3 VIG = 0 V; VLG = 0 V - 0.1 2 µA IG Operating current 4 VIG = 5 V; IL = 0 A 1.5 2.2 4 mA IL Off-state load current 5 VBL = 13 V; VIG = 0 V - 0.1 1 µA Resistances RON On-state resistance 6 VBG = 13 V; IL = 2 A; tp = 300 µs - 160 220 mΩ RON On-state resistance VBG = 5 V; IL = 0.5 A; tp = 300 µs - 225 320 mΩ RG Internal ground resistance IG = 10 mA - 150 - Ω

INPUT CHARACTERISTICS

Tmb = 25 ˚C; VBG = 13 V SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT II Input current VIG = 5 V 35 60 100 µA VIG Input clamping voltage II = 200 µA 6 7.5 8.5 V VIG(ON) Input turn-on threshold voltage - 2.1 2.7 V VIG(OFF) Input turn-off threshold voltage 1.5 2 - V 1 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8. 2 Defined as in ISO 10483-1. 3 This is the continuous current drawn from the battery when the input is low and includes leakage current to the load. 4 This is the continuous current drawn from the battery with no load connected, but with the input high. 5 The measured current is in the load pin only. 6 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current. April 1995 3 Rev 1.100,

PROTECTION FUNCTIONS AND STATUS INDICATIONS

Truth table for normal, open-circuit load and overload conditions and abnormal supply voltages. FUNCTIONS TRUTH TABLE THRESHOLD SYMBOL CONDITION INPUT STATUS OUTPUT MIN. TYP. MAX. UNIT Normal on-state111Normal off-state010IOpen circuit load1L(OC) 10130 90 150 mA Open circuit load010T2j(TO) Over temperature100150 175 - ˚C Over temperature3000VShort circuit load4BL(TO) 100910.5 12 V Short circuit load010V5BG(TO) Low supply voltageX10345VVBG(LP) High supply voltage6X1040 45 50 V For input ‘0’ equals low, ‘1’ equals high, ‘X’ equals don’t care. For status ‘0’ equals low, ‘1’ equals open or high. For output switch ‘0’ equals off, ‘1’ equals on.

STATUS CHARACTERISTICS

Tmb = 25 ˚C. The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VSG Status clamping voltage IS = 100 µA; VIG = 0V678VVSG Status low voltage IS = 50 µA; VBG = 13 V; VIG = 5 V - 0.7 0.8 V IS Status leakage current VSG = 5 V - 0.1 1 µA IS Status saturation current 7 VSS = 5 V; RS = 0 Ω; VBG = 13 V - 5 - mA Application information RS External pull-up resistor 8 VSS = 5 V - 100 - kΩ 1 In the on-state, the switch detects whether the load current is less than the quoted open load threshold current. This is for status indication only. Typical hysteresis equals 25 mA. The thresholds are specified for supply voltage within the normal working range. 2 After cooling below the reset temperature the switch will resume normal operation. The reset temperature is lower than the trip temperature by typically 10 ˚C. 3 If the overtemperature protection has operated, status remains low to indicate the overtemperature condition even if the input is taken low, providing the device has not cooled below the reset temperature. 4 After short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation. 5 Undervoltage sensor causes the device to switch off. Typical hysteresis equals 0.7 V. 6 Overvoltage sensor causes the device to switch off to protect the load. Typical hysteresis equals 1.3 V. 7 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. 8 The pull-up resistor also protects the status pin during reverse battery conditions. April 1995 4 Rev 1.100,

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C; VBG = 13 V SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Inductive load turn-off -VLG Negative load voltage 1 VIG = 0 V; IL = 2 A; tp = 300 µs 15 20 25 V Short circuit load protection2 VIG = 5 V; RL ≤ 10 mΩ td sc Response time - 75 - µs IL Load current prior to turn-off t < td sc - 17 - A Overload protection3 IL(lim) Load current limiting VBL = 9 V; tp = 300 µs 12 15 22 A

SWITCHING CHARACTERISTICS

Tmb = 25 ˚C, VBG = 13 V, for resistive load RL = 13 Ω. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT During turn-on to VIG = 5 V td on Delay time to 10% VL - 16 - µs dV/dton Rate of rise of load voltage - 1.3 3 V/µs t on Total switching time to 90% VL - 40 - µs During turn-off to VIG = 0 V td off Delay time to 90% VL - 20 - µs dV/dtoff Rate of fall of load voltage - 1.6 3 V/µs t off Total switching time to 10% VL - 35 - µs

CAPACITANCES

Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Cig Input capacitance VBG = 13 V - 15 20 pF Cbl Output capacitance VBL = VBG = 13 V - 120 170 pF Csg Status capacitance VSG = 5 V - 11 15 pF 1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage is clamped by the device. 2 The load current is self-limited during the response time for short circuit load protection. Response time is measured from when input goes high. 3 If the load resistance is low, but not a complete short circuit, such that the on-state voltage remains less than VBL(TO), the device remains in current limiting until the overtemperature protection operates. April 1995 5 Rev 1.100, IL / A BUK203-50Y VBL 9 VBG / V = 13 7 IB 6 IIB7

I

VBG TOPFET IL65IS HSSLS5VSG G

VLG VIG

RS IG400.5 1 1.5 2 VBL / V

Fig.4. High side switch measurements schematic. Fig.7. Typical on-state characteristics, Tj = 25 ˚C.

(current and voltage conventions) IL = f(VBL); parameter VBG; tp = 250 µs PD% Normalised Power Derating RON / Ohm BUK203-50Y 120 400 90 300 60 200 30 10000020 40 60 80 100 120 140 1 10 100 Tmb / C VBG / V

Fig.5. Normalised limiting power dissipation. Fig.8. Typical on-state resistance, Tj = 25 ˚C. PD% = 100⋅PD/PD(25 ˚C) = f(Tmb) RON = f(VBG); conditions: IL = 2 A; tp = 300 µs

IL / A BUK203-50Y RON / Ohm BUK203-50Y 8 0.5 VBG = 0.45V13V50.3 3 0.2 typ. 0.100020 40 60 80 100 120 140 -60 -20 20 60 100 140 180 Tmb / C Tj / C

Fig.6. Limiting continuous on-state load current. Fig.9. Typical on-state resistance, tp = 300 µs. IL = f(Tmb); conditions: VIG = 5 V, VBG = 13 V RON = f(Tj); parameter VBG; condition IL = 0.5 A April 1995 6 Rev 1.100 LOAD

, IG / mA BUK203-50Y IL BUK203-50Y 5 100 uA

CLAMPING

4 10 uA31uA OPERATING VIG = 3V2100 nA HIGH VOLTAGE 1 10 nA QUIESCENT VIG = 0V01nA 0 10 20 30 40 50 60 -60 -20 20 60 100 140 180 VBG / V Tj / C

Fig.10. Typical supply characteristics, 25 ˚C. Fig.13. Typical off-state leakage current. IG = f(VBG); parameter VIG IL = f(Tj); conditions: VBL = 13 V = VBG; VIG = 0 V.

IG / mA BUK203-50Y II / uA BUK203-50Y 3 200 VBG / V = 5 VBG / V = 150 50 5000-60 -20 20 60 100 140 18002468Tj / C VIG / V

Fig.11. Typical operating supply current. Fig.14. Typical input characteristics, Tj = 25 ˚C. IG = f(Tj); parameter VBG; condition VIG = 5 V II = f(VIG); parameter VBG

IB BUK203-50Y II / uA BUK203-50Y 100 uA 100 10 uA 1 uA 100 nA 10 nA 0 -60 -20 20 60 100 140 180 0 10 20 30 40 50 Tj / C VBG / V

Fig.12. Typical supply quiescent current. Fig.15. Typical input current, Tj = 25 ˚C. IB = f(Tj); condition VBG = 13 V, VIG = 0 V, VLG = 0 V II = f(VBG); condition VIG = 5 V April 1995 7 Rev 1.100

, VIG / V BUK203-50Y IS BUK203-50Y 3.0 10 uA 2.5 1 uA VIG(ON) 2.0 100 nA VIG(OFF) 1.5 1.0 10 nA -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 Tj / C Tj / C Fig.16. Typical input threshold voltages. Fig.19. Typical status leakage current. VIG = f(Tj); conditions VBG = 13 V, IL = 100 mA IS = f(Tj); conditions VSG = 5 V, VIG = VBG = 0 V VIG / V BUK203-50Y IS / uA BUK203-50Y 8.0 500 7.5 7.0 6.5 0 -60 -20 20 60 100 140 180 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 Tj / C VSG / V Fig.17. Typical input clamping voltage. Fig.20. Typical status low characteristic, Tj = 25 ˚C. VIG = f(Tj); conditions II = 200 µA, VBG = 13 V IS = f(VSG); conditions VIG = 5 V, VBG = 13 V, IL = 0 A IS / mA BUK203-50Y VSG / V BUK203-50Y 20 1 0.8 0.6 0.4 0.2000246810 -60 -20 20 60 100 140 180 VSG / V Tj / C Fig.18. Typical status characteristic, Tj = 25 ˚C. Fig.21. Typical status low voltage, VSG = f(Tj). IS = f(VSG); conditions VIG = VBG = 0 V conditions IS = 50 µA, VIG = 5 V, VBG = 13 V, IL = 0 A April 1995 8 Rev 1.100, VSG / V BUK203-50Y VBG(LP) / V BUK203-50Y 8.0 47 VIG / V = 46 off 7.5 5 7.0 on 6.5 43 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 Tj / C Tj / C Fig.22. Typical status clamping voltage, VSG = f(Tj). Fig.25. Supply typical overvoltage thresholds. parameter VIG; conditions IS = 100 µA, VBG = 13 V VBG(LP) = f(Tj); conditions VIG = 5 V; IL = 100 mA IL(OC) / mA BUK203-50Y VBG / V BUK203-50Y 200 65 max. 60 IG = 1 mA 100 typ. 10 uA min. 0 50 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 Tj / C Tj / C Fig.23. Low load current detection threshold. Fig.26. Typical battery to ground clamping voltage. IL(OC) = f(Tj); conditions VIG = 5 V; VBG = 13 V VBG = f(Tj); parameter IG VBG(TO) / V BUK203-50Y IL / A BUK203-50Y 5 1048on36off5241200-60 -20 20 60 100 140 180 -24 -20 -16 -12 -8 -4 0 Tj / C VLG / V Fig.24. Supply typical undervoltage thresholds. Fig.27. Typical negative load clamping characteristic. VBG(TO) = f(Tj); conditions VIG = 3 V; IL = 100 mA IL = f(VLG); conditions VIG = 0 V, tp = 300 µs, 25 ˚C April 1995 9 Rev 1.100, VLG / V BUK203-50Y IL / A BUK203-50Y -10 0 -12 IL = -5 -14 1 mA -16 -102A-18 tp = 300 us -15 -20 -22 -20 -60 -20 20 60 100 140 180 -1.1 -0.9 -0.7 -0.5 -0.3 -0.1 Tj / C VBL / V

Fig.28. Typical negative load clamping voltage. Fig.31. Typical reverse diode characteristic. VLG = f(Tj); parameter IL; condition VIG = 0 V. IL = f(VBL); conditions VIG = 0 V, Tj = 25 ˚C

VBL / V BUK203-50Y Cbl / pF BUK203-50Y 65 1000 IL = tp = 300 us1A1mA 100 uA 100 50 10 -60 -20 20 60 100 140 180 0 10 20 30 40 50 Tj / C VBL / V

Fig.29. Typical battery to load clamping voltage. Fig.32. Typical output capacitance. Tmb = 25 ˚C VBL = f(Tj); parameter IL; condition IG = 5 mA. Cbl = f(VBL); conditions f = 1 MHz, VIG = 0 V

IG / mA BUK203-50Y IL / A BUK203-50Y 0 20 VBL(TO) typ. current limiting tp = -50 50 us 10 300 us i.e. before short circuit load trip -100 -150 0 -20 -15 -10 -5004812 16 20 24 28 VBG / V VBL / V

Fig.30. Typical reverse battery characteristic. Fig.33. Typical overload characteristic, Tmb = 25 ˚C. IG = f(VBG); conditions IL = 0 A, Tj = 25 ˚C IL = f(VBL); condition VBG = 13 V; parameter tp April 1995 10 Rev 1.100

, IL(LIM) / A BUK203-50Y VBL(TO) / V BUK203-50Y 20 15 10 1005-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 Tmb / C Tmb / C Fig.34. Typical overload current, VBL = 9 V. Fig.36. Typical short circuit load threshold voltage. IL = f(Tmb); conditions VBG = 13 V; tp = 100 µs VBL(TO) = f(Tmb); condition VBG = 13 V VBL(TO) / V BUK203-50Y Zth j-mb / (K/W) BUK203-50Y 12 10 D = 0.5 11 1 0.2 0.1 0.05 10 0.1 0.02 PD tppD= tTTt90.01 0 10 20 30 40 100n 1u 10u 100u 1m 10m 100m 1 10 VBG / V t / s Fig.35. Typical short circuit load threshold voltage. Fig.37. Transient thermal impedance. VBL(TO) = f(VBG); condition Tmb = 25 ˚C Zth j-mb = f(t); parameter D = tp/T April 1995 11 Rev 1.100,

MECHANICAL DATA

Dimensions in mm 4.5 Net Mass: 2 g max 10.3 max 1.3 3.6 2.8 5.9 min mounting base 15.8 2.4 max max in m (2) . 3.5 max R not tinned 5.6 (1) 9.75 0.5 5 in 0.6 m512345.min 0(4 x) R 0.6 1.7 2.4 (4 x) 4.5 (1) 0.9 max 0.4 M 8.2 (5 x) NOTES (1) positional accuracy of the terminals is controlled in this zone only. (2) terminal dimensions in this zone are uncontrolled. Fig.38. SOT263 leadform 263-01; pin 3 connected to mounting base. Note 1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". April 1995 12 Rev 1.100,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 13 Rev 1.100]
15

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DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D117 BY8000 series Fast high-voltage soft-recovery controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of June 1994 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION expansion of all used parts are mat
DATA SHEET BY614 Miniature high-voltage soft-recovery rectifier
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D189 BY614 Miniature high-voltage soft-recovery rectifier Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION expansion of all used parts are matched. • Glass passivated
DISCRETE SEMICONDUCTORS DATA SHEET BY584 High-voltage soft-recovery rectifier Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D189 BY584 High-voltage soft-recovery rectifier Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION expansion of all used parts are matched. • Glass passivated Rugged gla
DISCRETE SEMICONDUCTORS DATA SHEET BY527 Controlled avalanche rectifier Product specification 1996 Jun 11 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BY527 Controlled avalanche rectifier Product specification 1996 Jun 11 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • G