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DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 3.5A5pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT APPLICATIONS VBG Continuous off-state supply voltage 50 V General controller for driving IL Continuous load current 10 A lamps, motors, solenoids, heaters. Tj Continuous junction temperature 150 ˚C RON On-state resistance 100 mΩ FEATURES FUNCTIONAL BLOCK DIAGRAM Vertical power DMOS switch Low on-state resistance5Vlogic com...
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DESCRIPTION QUICK REFERENCE DATA

Monolithic temperature and SYMBOL PARAMETER MIN. UNIT overload protected power switch based on MOSFET technology in a IL Nominal load current (ISO) 3.5A5pin plastic envelope, configured as a single high side switch. SYMBOL PARAMETER MAX. UNIT

APPLICATIONS

VBG Continuous off-state supply voltage 50 V General controller for driving IL Continuous load current 10 A lamps, motors, solenoids, heaters. Tj Continuous junction temperature 150 ˚C RON On-state resistance 100 mΩ

FEATURES FUNCTIONAL BLOCK DIAGRAM

Vertical power DMOS switch Low on-state resistance5Vlogic compatible input with hysteresis BATT Overtemperature protection - self resets with hysteresis STATUS Overload protection against short circuit load with POWER output current limiting; MOSFET latched - reset by input INPUT High supply voltage load CONTROL & protection Supply undervoltage lock out PROTECTION Status indication for overload CIRCUITS protection activated Diagnostic status indication of open circuit load LOAD Very low quiescent current Voltage clamping for turn off of GROUND inductive loads ESD protection on all pins Reverse battery and overvoltage protection Fig.1. Elements of the TOPFET HSS. with external ground resistor

PINNING - SOT263 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION tab 1 Ground

B

2 Input I TOPFETL3Battery (+ve supply) S HSS12345G4Status leadform 263-01 5 Load Fig. 2. Fig. 3. tab connected to pin 3 April 1995 1 Rev 1.000,

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Battery voltages VBG Continuous off-state supply voltage - 0 50 V Reverse battery voltages1 External resistors: -VBG Repetitive peak supply voltage RG ≥150 Ω; RI = RS ≥ 4.7 kΩ, - 32Vδ≤ 0.1 -VBG Continuous reverse supply voltage RG ≥150 Ω; RI = RS ≥ 4.7 kΩ - 16 V IL Continuous load current Tmb ≤ 115 ˚C - 10 A PD Total power dissipation Tmb ≤ 25 ˚C - 62.5 W Tstg Storage temperature - -55 175 ˚C Tj Continuous junction temperature 2 - - 150 ˚C Tsold Lead temperature during soldering - 250 ˚C Input and status II Continuous input current - -5 5 mA IS Continuous status current - -5 5 mA II Repetitive peak input current δ ≤ 0.1 -20 20 mA IS Repetitive peak status current δ ≤ 0.1 -20 20 mA Inductive load clamping EBL Non-repetitive clamping energy Tmb = 150 ˚C prior to turn-off - 1.2 J

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VC Electrostatic discharge capacitor Human body model; - 2 kV voltage C = 250 pF; R = 1.5 kΩ

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Thermal resistance3 Rth j-mb Junction to mounting base - - 1.5 2 K/W Rth j-a Junction to ambient in free air - 60 75 K/W 1 Reverse battery voltage is allowed only with external input and status resistors to limit the currents to a safe value. 2 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 3 Of the output Power MOS transistor. April 1995 2 Rev 1.000,

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Clamping voltages VBG Battery to ground IG = 1 mA 50 55 65 V VBL Battery to load IL = IG = 1 mA 50 55 65 V -VLG Negative load to ground IL = 1 mA 12 17 21 V Supply voltage battery to ground VBG Operating range 1 - 5 - 40 V Currents VBG = 13 V IL Nominal load current 2 VBL = 0.5 V; Tmb = 85 ˚C 3.5 - - A IB Quiescent current 3 VIG = 0 V; VLG = 0 V - 0.1 2 µA IG Operating current 4 VIG = 5 V; IL = 0 A 1.5 2.2 4 mA IL Off-state load current 5 VBL = 13 V; VIG = 0 V - 0.1 1 µA Resistances RON On-state resistance 9 VBG = 13 V; IL = 5 A; tp = 300 µs - 77 100 mΩ RON On-state resistance VBG = 5 V; IL = 1 A; tp = 300 µs - 116 150 mΩ

INPUT CHARACTERISTICS

Tmb = 25 ˚C; VBG = 13 V SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT II Input current VIG = 5 V 35 60 100 µA VIG Input clamping voltage II = 200 µA678VVIG(ON) Input turn-on threshold voltage - 2.1 2.4 V VIG(OFF) Input turn-off threshold voltage 1.5 1.7 - V ∆VIG Input turn-on hysteresis - 0.4 - V 1 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8. 2 Defined as in ISO 10483-1. 3 This is the continuous current drawn from the battery when the input is low and includes leakage current to the load. 4 This is the continuous current drawn from the battery with no load connected, but with the input high. 5 The measured current is in the load pin only. 6 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current. April 1995 3 Rev 1.000,

PROTECTION FUNCTIONS AND STATUS INDICATIONS

Truth table for normal, open-circuit load and overload conditions and abnormal supply voltages. FUNCTIONS TRUTH TABLE THRESHOLD SYMBOL CONDITION INPUT STATUS OUTPUT MIN. TYP. MAX. UNIT Normal on-state111Normal off-state010IL(OC) Open circuit load110150 200 350 mA Open circuit load010T2j(TO) Over temperature100150 175 - ˚C Over temperature3000VBL(TO) Short circuit load41008.5 10.3 12 V Short circuit load010VBG(TO) Low supply voltage5X10345VV6BG(LP) High supply voltageX1040 45 50 V For input ‘0’ equals low, ‘1’ equals high, ‘X’ equals don’t care. For status ‘0’ equals low, ‘1’ equals open or high. For output switch ‘0’ equals off, ‘1’ equals on.

STATUS CHARACTERISTICS

Tmb = 25 ˚C. The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VSG Status clamping voltage IS = 100 µA678VVSG Status low voltage IS = 50 µA; VBG = 13 V - 0.7 0.8 V IS Status leakage current VSG = 5 V - 0.1 1 µA IS Status saturation current 7 VSS = 5 V; RS = 0 Ω; VBG = 13 V - 9 - mA Application information RS External pull-up resistor 8 VSS = 5 V - 100 - kΩ 1 In the on-state, the switch detects whether the load current is less than the quoted open load threshold current. This is for status indication only. Typical hysteresis equals 80 mA. The thresholds are specified for supply voltage within the normal working range. 2 After cooling below the reset temperature the switch will resume normal operation. The reset temperature is lower than the trip temperature by typically 10 ˚C. 3 If the overtemperature protection has operated, status remains low to indicate the overtemperature condition even if the input is taken low, providing the device has not cooled below the reset temperature. 4 After short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation. 5 Undervoltage sensor causes the device to switch off. Typical hysteresis equals 0.5 V. 6 Overvoltage sensor causes the device to switch off to protect the load. Typical hysteresis equals 1.1 V. 7 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. 8 The pull-up resistor also protects the status pin during reverse battery conditions. April 1995 4 Rev 1.000,

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C; VBG = 13 V SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Inductive load turn-off -VLG Negative load voltage 1 VIG = 0 V; IL = 5 A; tp = 300 µs 15 20 25 V Short circuit load protection2 VIG = 5 V; RL ≤ 10 mΩ td sc Response time VIG = 5 V - 90 - µs IL Load current prior to turn-off t < td sc - 35 - A Overload protection3 IL(lim) Load current limiting VBL = 8.5 V; tp = 300 µs 23 33 43 A

SWITCHING CHARACTERISTICS

Tmb = 25 ˚C, VBG = 13 V, for resistive load RL = 13 Ω. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT During turn-on to VIG = 5 V td on Delay time to 10% VL - 16 - µs dV/dton Rate of rise of load voltage - 1 2.5 V/µs t on Total switching time to 90% VL - 40 - µs During turn-off to VIG = 0 V td off Delay time to 90% VL - 30 - µs dV/dtoff Rate of fall of load voltage - 1.2 2.5 V/µs t off Total switching time to 10% VL - 50 - µs

CAPACITANCES

Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Cig Input capacitance VBG = 13 V - 15 20 pF Cbl Output capacitance VBL = VBG = 13 V - 330 460 pF Csg Status capacitance VSG = 5 V - 11 15 pF 1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage is clamped by the device. 2 The load current is self-limited during the response time for short circuit load protection. Response time is measured from when input goes high. 3 If the load resistance is low, but not a complete short circuit, such that the on-state voltage remains less than VBL(TO), the device remains in current limiting until the overtemperature protection operates. April 1995 5 Rev 1.000, IL / A BUK200-50X VBG / V = 13 7

VBL

IB 15 5 II B

I

TOPFET ILVBG IS HSSLSVLG 10 VSG G

VIG

RS IG 0 0.5 1 1.5 2 VBL / V Fig.4. High side switch measurements schematic. Fig.7. Typical on-state characteristics, Tj = 25 ˚C. (current and voltage conventions) IL = f(VBL); parameter VBG; tp = 250 µs PD% Normalised Power Derating RON / mO BUK200-50X120 150 80 100 40 5000020 40 60 80 100 120 140 1 10 100 Tmb / C VBG / V Fig.5. Normalised limiting power dissipation. Fig.8. Typical on-state resistance, Tj = 25 ˚C. PD% = 100⋅PD/PD(25 ˚C) = f(Tmb) RON = f(VBG); conditions: IL = 5 A; tp = 300 µs IL / A BUK200-50X RON / mOhm BUK200-50X 15 200 VBG = 5 V 13 V typ. 00020 40 60 80 100 120 140 -60 -20 20 60 100 140 180 Tmb / C Tj / C Fig.6. Limiting continuous on-state load current. Fig.9. Typical on-state resistance, tp = 300 µs. IL = f(Tmb); conditions: VIG = 5 V, VBG = 13 V RON = f(Tj); parameter VBG; condition IL = 1 A April 1995 6 Rev 1.000

LOAD

, IG / mA BUK200-50X IL BUK200-50X 5 100 uA

CLAMPING

4 10 uA31uA OPERATING VIG = 3V2100 nA HIGH VOLTAGE 1 10 nA QUIESCENT VIG = 0V01nA 0 10 20 30 40 50 60 -60 -20 20 60 100 140 180 VBG / V Tj / C

Fig.10. Typical supply characteristics, 25 ˚C. Fig.13. Typical off-state leakage current. IG = f(VBG); parameter VIG IL = f(Tj); conditions: VBL = 13 V = VBG; VIG = 0 V.

IG / mA BUK200-50X II / uA BUK200-50X 3 200 VBG / V = 5 VBG / V = 1502713 100 50 5000-60 -20 20 60 100 140 18002468Tj / C VIG / V

Fig.11. Typical operating supply current. Fig.14. Typical input characteristics, Tj = 25 ˚C. IG = f(Tj); parameter VBG; condition VIG = 5 V II = f(VIG); parameter VBG

IB BUK200-50X II / uA BUK200-50X 100 uA 100 10 uA 1 uA 100 nA 10 nA 0 -60 -20 20 60 100 140 180 0 10 20 30 40 50 Tj / C VBG / V

Fig.12. Typical supply quiescent current. Fig.15. Typical input current, Tj = 25 ˚C. IB = f(Tj); condition VBG = 13 V, VIG = 0 V, VLG = 0 V II = f(VBG); condition VIG = 5 V April 1995 7 Rev 1.000

, VIG / V BUK200-50X IS BUK200-50X 3.0 10 uA 2.5 1 uA VIG(ON) 2.0 100 nA 1.5 VIG(OFF) 1.0 10 nA -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 Tj / C Tj / C Fig.16. Typical input threshold voltages. Fig.19. Typical status leakage current. VIG = f(Tj); conditions VBG = 13 V, IL = 50 mA IS = f(Tj); conditions VSG = 5 V, VIG = VBG = 0 V VIG / V BUK200-50X IS / uA BUK200-50X 8.0 1000 7.5 7.0 6.5 0 -60 -20 20 60 100 140 180 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 Tj / C VSG / V Fig.17. Typical input clamping voltage. Fig.20. Typical status low characteristic, Tj = 25 ˚C. VIG = f(Tj); conditions II = 200 µA, VBG = 13 V IS = f(VSG); conditions VIG = 5 V, VBG = 13 V, IL = 0 A IS / mA BUK200-50X VSG / V BUK200-50X 20 1 0.8 0.6 0.4 0.2000246810 -60 -20 20 60 100 140 180 VSG / V Tj / C Fig.18. Typical status characteristic, Tj = 25 ˚C. Fig.21. Typical status low voltage, VSG = f(Tj). IS = f(VSG); conditions VIG = VBG = 0 V conditions IS = 50 µA, VIG = 5 V, VBG = 13 V, IL = 0 A April 1995 8 Rev 1.000, VSG / V BUK200-50X VBG(LP) / V BUK200-50X 8.0 46 off 7.5 44 on 7.0 6.5 42 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 Tj / C Tj / C Fig.22. Typical status clamping voltage, VSG = f(Tj). Fig.25. Supply typical overvoltage thresholds. conditions IS = 100 µA, VBG = 13 V VBG(LP) = f(Tj); conditions VIG = 5 V; IL = 50 mA IL(OC) / mA BUK200-50X VBG / V BUK200-50X 500 65 max. 60 IG = 1 mA typ. 200 10 uA 100 min. 0 50 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 Tj / C Tj / C Fig.23. Low load current detection threshold. Fig.26. Typical battery to ground clamping voltage. IL(OC) = f(Tj); conditions VIG = 5 V; VBG = 13 V VBG = f(Tj); parameter IG VBG(TO) / V BUK200-50X IL / A BUK200-50X 5 20 on 15 off00-60 -20 20 60 100 140 180 -24 -20 -16 -12 -8 -4 0 Tj / C VLG / V Fig.24. Supply typical undervoltage thresholds. Fig.27. Typical negative load clamping characteristic. VBG(TO) = f(Tj); conditions VIG = 3 V; IL = 50 mA IL = f(VLG); conditions VIG = 0 V, tp = 300 µs, 25 ˚C April 1995 9 Rev 1.000, VLG / V BUK200-50X IL / A BUK200-50X -10 0 -12 IL = -5 -14 1 mA -16 -105A-18 tp = 300 us -15 -20 -22 -20 -60 -20 20 60 100 140 180 -1.1 -0.9 -0.7 -0.5 -0.3 -0.1 Tj / C VBL / V

Fig.28. Typical negative load clamping voltage. Fig.31. Typical reverse diode characteristic. VLG = f(Tj); parameter IL; condition VIG = 0 V. IL = f(VBL); conditions VIG = 0 V, Tj = 25 ˚C

VBL / V BUK200-50X Cbl / pF BUK200-50X 65 1000 IL = tp = 300 us 2.5A1mA 100 uA 50 100 -60 -20 20 60 100 140 180 0 10 20 30 40 50 Tj / C VBL / V

Fig.29. Typical battery to load clamping voltage. Fig.32. Typical output capacitance. Tmb = 25 ˚C VBL = f(Tj); parameter IL; condition IG = 5 mA. Cbl = f(VBL); conditions f = 1 MHz, VIG = 0 V

IG / mA BUK200-50X IL / A BUK200-50X 0 50 VBL(TO) typ. current limiting -50 tp = 30 50 us -100 i.e. before short300 us circuit load trip -150 -200 0 -1 -0.8 -0.6 -0.4 -0.200246810 12 14 16 18 20 VBG / V VBL / V

Fig.30. Typical reverse battery characteristic. Fig.33. Typical overload characteristic, Tmb = 25 ˚C. IG = f(VBG); conditions IL = 0 A, Tj = 25 ˚C IL = f(VBL); condition VBG = 13 V; parameter tp April 1995 10 Rev 1.000

, IL(LIM) / A BUK200-50X VBL(TO) / V BUK200-50X 45 15 40 14 35 13 1075605-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 Tmb / C Tmb / C Fig.34. Typical overload current, VBL = 8.5 V. Fig.36. Typical short circuit load threshold voltage. IL = f(Tmb); conditions VBG = 13 V; tp = 300 µs VBL(TO) = f(Tmb); condition VBG = 13 V VBL(TO) / V BUK200-50X Zth j-mb / (K/W) BUK200-50X 12 10 11 D = 1 0.5 0.2 0.1 0.1 0.05 tp 9 0.02 P tpD D = T0Tt80.01 0 10 20 30 40 100n 1u 10u 100u 1m 10m 100m 1 10 VBG / V t / s Fig.35. Typical short circuit load threshold voltage. Fig.37. Transient thermal impedance. VBL(TO) = f(VBG); condition Tmb = 25 ˚C Zth j-mb = f(t); parameter D = tp/T April 1995 11 Rev 1.000,

MECHANICAL DATA

Dimensions in mm 4.5 Net Mass: 2 g max 10.3 max 1.3 3.6 2.8 5.9 min mounting base 15.8 2.4 max max in m (2) . 3.5 max R not tinned 5.6 (1) 9.75 0.5 5 in 0.6 m512345.min 0(4 x) R 0.6 1.7 2.4 (4 x) 4.5 (1) 0.9 max 0.4 M 8.2 (5 x) NOTES (1) positional accuracy of the terminals is controlled in this zone only. (2) terminal dimensions in this zone are uncontrolled. Fig.38. SOT263 leadform 263-01; pin 3 connected to mounting base. Note 1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". April 1995 12 Rev 1.000,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1995 13 Rev 1.000]
15

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DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BY527 Controlled avalanche rectifier Product specification 1996 Jun 11 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • G
DISCRETE SEMICONDUCTORS DATA SHEET BY505 High-voltage soft-recovery rectifier Product specification 1996 May 28 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D189 BY505 High-voltage soft-recovery rectifier Product specification 1996 May 28 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION expansion of all used parts are matched. • Glass passivated Rugged gla
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOD100 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT rectifier diode in a full pack plastic envelope, featuring fast forward VRRM Repetitive peak reverse voltage 1500 V recovery and low forward recovery VF Forward voltage 1.2 V voltage. The device is i
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AC PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT rectifier diode in a plastic envelope, featuring fast forward recovery and VRRM Repetitive peak reverse voltage 1500 V low forward recovery voltage. The VF Forward voltage 1.2 V device is intended fo
DISCRETE SEMICONDUCTORS DATA SHEET BY448 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BY448 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Ru