Download: DESCRIPTION QUICK REFERENCE DATA APPLICATIONS VIS = 5 V 35 mΩ

DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET ina5pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 50 A purpose switch for automotive Ptot Total power dissipation 125 W systems and other applications. Tj Continuous junction temperature 150 ˚C RDS(ON) Drain-source on-state resistance APPLICATIONS VIS = 5 V 35 mΩ VIS = 8 V 28 mΩ General controller for driving lamps SYMBOL PARAMETER NOM. UNIT motors solenoids VPSN Protection supply voltage heaters BU...
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DESCRIPTION QUICK REFERENCE DATA

Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET ina5pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 50 A purpose switch for automotive Ptot Total power dissipation 125 W systems and other applications. Tj Continuous junction temperature 150 ˚C RDS(ON) Drain-source on-state resistance

APPLICATIONS VIS = 5 V 35 mΩ

VIS = 8 V 28 mΩ General controller for driving lamps SYMBOL PARAMETER NOM. UNIT motors solenoids VPSN Protection supply voltage heaters BUK106-50L5VBUK106-50S 10 V

FEATURES FUNCTIONAL BLOCK DIAGRAM

Vertical power DMOS output stage PROTECTION SUPPLY DRAIN Low on-state resistance Logic and protection supply from separate pin Low operating supply current FLAG O/V Overload protection against over temperature CLAMP Overload protection against POWERINPUT short circuit load MOSFET Latched overload protection reset by protection supply Protection circuit condition indicated by flag pin LOGIC AND5Vlogic compatible input level PROTECTION Separate input pin for higher frequency drive ESD protection on input, flag and protection supply pins Over voltage clamping for turn SOURCE off of inductive loads Both linear and switching operation are possible Fig.1. Elements of the TOPFET.

PINNING - SOT263 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION tab 1 input DTOPFET 2 flag P

P F

3 drain

I

leadform 4 protection supply12345263-01 5 source Fig. 2. Type numbers ending with S suffix P refer to leadform 263-01. Fig. 3. tab drain February 1993 1 Rev 1.200,

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Voltages VDSS Continuous off-state drain source VIS = 0 V - 50 V voltage1 VIS Continuous input voltage - 0 11 V VFS Continuous flag voltage - 0 11 V VPS Continuous supply voltage - 0 11 V Currents VIS = - 85VID Continuous drain current Tmb ≤ 25 ˚C - 50 45 A ID Continuous drain current Tmb ≤ 100 ˚C - 31 28 A IDRM Repetitive peak on-state drain current Tmb ≤ 25 ˚C - 200 180 A Thermal Ptot Total power dissipation Tmb = 25 ˚C - 125 W Tstg Storage temperature - -55 150 ˚C Tj Junction temperature 2 continuous - 150 ˚C Tsold Lead temperature during soldering - 250 ˚C

OVERLOAD PROTECTION LIMITING VALUES

With the protection supply An n-MOS transistor turns on For internal overload protection to connected, TOPFET can protect between the input and source to remain latched while the control itself from two types of overload - quickly discharge the power circuit is high, external series input over temperature and short circuit MOSFET gate capacitance. resistance must be provided. Refer load. to INPUT CHARACTERISTICS. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VIS = 8 5 - V VPSP Protection supply voltage 3 for valid protection BUK106-50L 4.4 4 - V BUK106-50S 5.4 5 - V Over temperature protection VPS = VPSN VDDP(T) Protected drain source supply voltage VIS = 10 V; RI ≥ 2 kΩ - 50 V VIS = 5 V; RI ≥ 1 kΩ - 50 V Short circuit load protection VPS = VPSN; L ≤ 10 µH VDDP(P) Protected drain source supply voltage 4 VIS = 10 V; RI ≥ 2 kΩ - 24 V VIS = 5 V; RI ≥ 1 kΩ - 45 V PDSM Instantaneous overload dissipation - 4 kW

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VC Electrostatic discharge capacitor Human body model; - 2 kV voltage C = 250 pF; R = 1.5 kΩ 1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 3 The minimum supply voltage required for correct operation of the overload protection circuits. 4 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed VDDP(P) maximum. For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS. February 1993 2 Rev 1.200,

OVERVOLTAGE CLAMPING LIMITING VALUES

At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IDRRM Repetitive peak clamping drain current RIS ≥ 100 Ω1 - 50 A EDSM Non-repetitive inductive turn-off IDM = 27 A; RIS ≥ 100 Ω - 1 J energy2 EDRM Repetitive inductive turn-off energy RIS ≥ 100 Ω; Tmb ≤ 85 ˚C; - 80 mJ IDM = 16 A; VDD ≤ 20 V; f = 250 Hz IDIRM Repetitive peak drain to input current 3 RIS = 0 Ω; tp ≤ 1 ms - 50 mA

REVERSE DIODE LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IS Continuous forward current Tmb = 25 ˚C; - 50 A VIS = VPS = VFS = 0 V

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Thermal resistance Rth j-mb Junction to mounting base - - 0.8 1.0 K/W Rth j-a Junction to ambient in free air - 60 - K/W

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(CL)DSR Drain-source clamping voltage RIS = 100 Ω; ID = 10 mA 50 - 65 V V(CL)DSR Drain-source clamping voltage RIS = 100 Ω; IDM = 1 A; tp ≤ 300 µs; 50 - 70Vδ≤ 0.01 IDSS Zero input voltage drain current VDS = 12 V; VIS = 0 V - 0.5 10 µA IDSR Drain source leakage current VDS = 50 V; RIS = 100 Ω; - 1 20 µA IDSR Drain source leakage current VDS = 40 V; RIS = 100 Ω; Tj = 125 ˚C - 10 100 µA RDS(ON) Drain-source on-state IDM = 25 A; VIS = 8 V - 22 28 mΩ resistance tp ≤ 300 µs; δ ≤ 0.01 VIS = 5 V - 28 35 mΩ 1 The input pin must be connected to the source pin by a specified external resistance to allow the power MOSFET gate source voltage to become sufficiently positive for active clamping. Refer to INPUT CHARACTERISTICS. 2 While the protection supply voltage is connected, during overvoltage clamping it is possible that the overload protection may operate at energies close to the limiting value. Refer to OVERLOAD PROTECTION CHARACTERISTICS. 3 Shorting the input to source with low resistance inhibits the internal overvoltage protection by preventing the power MOSFET gate source voltage becoming positive. February 1993 3 Rev 1.200,

OVERLOAD PROTECTION CHARACTERISTICS

With adequate protection supply Provided there is adequate input Refer also to OVERLOAD voltage TOPFET detects when one series resistance it switches off PROTECTION LIMITING VALUES of the overload thresholds is and remains latched off until reset and INPUT CHARACTERISTICS. exceeded. by the protection supply pin. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Short circuit load protection1 V 2PS = VPSN ; Tmb = 25 ˚C; L ≤ 10 µH EDS(TO) Overload threshold energy VDD = 13 V; VIS = 10 V - 550 - mJ td sc Response time VDD = 13 V; VIS = 10 V - 0.4 - ms Over temperature protection VPS = VPSN Tj(TO) Threshold junction temperature from ID ≥ 2.5 A3 150 - - ˚C

TRANSFER CHARACTERISTICS

Tmb = 25 ˚C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT gfs Forward transconductance VDS = 12 V; IDM = 25 A tp ≤ 300 µs; 17 28 - S δ ≤ 0.01 ID Drain current 4 VDS = 13 V; VIS = 5 V - 80 - A VIS = 10 V 160 - A

PROTECTION SUPPLY CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Protection supply IPS, Protection supply current normal operation or IPSL protection latched BUK106-50L VPS = 5 V - 0.2 0.35 mA BUK106-50S VPS = 10 V - 0.4 1.0 mA VPSR Protection reset voltage 5 1.5 2.5 3.5 V Tj = 150 ˚C 1.0 - - V V(CL)PS Protection clamp voltage IP = 1.35 mA 11 13 - V

REVERSE DIODE CHARACTERISTICS

Tmb = 25 ˚C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VSDS Forward voltage IS = 20 A; VIS = VPS = VFS = 0 V; - 0.9 1.2 V tp = 300 µs trr Reverse recovery time not applicable 6 - - - - 1 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for PDSM, which is always the case when VDS is less than VDSP maximum. 2 At the appropriate nominal protection supply voltage for each type. Refer to QUICK REFERENCE DATA. 3 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum ID ensures this condition. 4 During overload condition. Refer also to OVERLOAD PROTECTION LIMITING VALUES and CHARACTERISTICS. 5 The supply voltage below which the overload protection circuits will be reset. 6 The reverse diode of this type is not intended for applications requiring fast reverse recovery. February 1993 4 Rev 1.200,

INPUT CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Normal operation VIS(TO) Input threshold voltage VDS = 5 V; ID = 1 mA 1.0 1.5 2.0 V Tmb = 150 ˚C 0.5 - - V IIS Input current VIS = 10 V - 10 100 nA V(CL)IS Input clamp voltage II = 1 mA 11 13 - V Overload protection latched RISL Input resistance 1 VPS = 5 V II = 5 mA; - 55 - Ω Tmb = 150 ˚C - 95 - Ω VPS = 10 V II = 5 mA; - 35 - Ω Tmb = 150 ˚C - 60 - Ω Application information External input resistances for (see figure 29) RIS internal overvoltage clamping 2 RI = ∞ Ω; VDS > 30 V 100 - - Ω RI internal overload protection 3 RIS = ∞ Ω; VII = 5V1- - kΩ VII = 10V2- - kΩ

SWITCHING CHARACTERISTICS

Tmb = 25 ˚C; RI = 50 Ω; RIS = 50 Ω (see figure 29); resistive load RL = 10 Ω. For waveforms see figure 28. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT td on Turn-on delay time VDD = 15 V; VIS: 0 V ⇒ 10 V - 10 - ns tr Rise time - 35 - ns td off Turn-off delay time VDD = 15 V; VIS: 10 V ⇒ 0 V - 280 - ns tf Fall time - 120 - ns

CAPACITANCES

Tmb = 25 ˚C; f = 1 MHz SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Ciss Input capacitance VDS = 25 V; VIS = 0 V - 1250 1800 pF Coss Output capacitance VDS = 25 V; VIS = 0 V - 650 1000 pF Crss Reverse transfer capacitance VDS = 25 V; VIS = 0 V - 150 250 pF Cpso Protection supply pin VPS = 10 V - 30 - pF capacitance Cfso Flag pin capacitance VFS = 10 V; VPS = 0 V - 20 - pF 1 The resistance of the internal transistor which discharges the power MOSFET gate capacitance when overload protection operates. The external drive circuit should be such that the input voltage does not exceed VIS(TO) minimum when the overload protection has operated. Refer also to figure for latched input characteristics. 2 Applications using a lower value for RIS would require external overvoltage protection. 3 For applications requiring a lower value for RI, an external overload protection strategy is possible using the flag pin to ‘tell’ the control circuit to switch off the input. February 1993 5 Rev 1.200,

FLAG DESCRIPTION TRUTH TABLE

The flag pin provides a means to CONDITION DESCRIPTION FLAG detect the presence of the protection supply and indicate the NORMAL Normal operation and adequate LOGIC LOW state of the overload detectors. protection supply voltage The flag is the open drain of an n-MOS transistor and requires an OVER TEMP. Over temperature detected LOGIC HIGH external pull-up resistor1. It is suitable for both5Vand 10 V logic. Flag may be used to implement an SHORT CIRCUIT Overload condition detected LOGIC HIGH external protection strategy2 for applications which require low input drive impedance. SUPPLY FAULT Inadequate protection supply LOGIC HIGH voltage

FLAG CHARACTERISTICS

Tmb = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Flag ‘low’ normal operation VFS Flag voltage IF = 1.6 mA - 0.15 0.4 V IFSS Flag saturation current VFS = 10 V - 15 - mA Flag ‘high’ overload or fault IFS Flag leakage current VFS = 10 V - - 10 µA VPSF Protection supply threshold VFF = 5 V; RF = 3 kΩ; voltage BUK106-50L 2.5 3.34VBUK106-50S 3.3 4.25VV(CL)FS Flag clamping voltage IF = 1 mA; VPS = 0 V 11 13 - V Application information RF Suitable external pull-up VFF =5V110 50 kΩ resistance VFF =10V220 100 kΩ

ENVELOPE CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Ld Internal drain inductance Measured from contact screw on - 3.5 - nH tab to centre of die Ld Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die Ls Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad 1 Even if the flag pin is not used, it is recommended that it is connected to the protection supply via a pull-up resistor. It should not be left floating. 2 Low pass filtering of the flag signal may be advisable to prevent false tripping. February 1993 6 Rev 1.200, PD% Normalised Power Derating Zth / (K/W) BUK106-50L/S120 10 901D= 80 0.5 70 0.2 60 0.1 0.1 50 0.05 40 0.02 30 0.01 P tpp0DD= t

T

Tt00.001 0 20 40 60 80 100 120 140 1E-07 1E-05 1E-03 1E-01 1E+01 Tmb / C t / s

Fig.4. Normalised limiting power dissipation. Fig.7. Transient thermal impedance. PD% = 100⋅PD/PD(25 ˚C) = f(Tmb) Zth j-mb = f(t); parameter D = tp/T

ID% Normalised Current Derating ID / A BUK106-50L/S 120 200 110 VIS / V = 100 10 90 150 9 80 8 70 7 60 100 6 50 5 30 50 4 20300020 40 60 80 100 120 14004812 16 20 24 28 32 Tmb / C VDS / V

Fig.5. Normalised continuous drain current. Fig.8. Typical output characteristics, Tj = 25 ˚C. ID% = 100⋅ID/ID(25 ˚C) = f(Tmb); conditions: VIS = 5 V ID = f(VDS); parameter VIS; tp = 250 µs & tp < td sc

ID & IDM / A BUK106-50L/S ID / A BUK106-50L/S 1000 50 Overload protection characteristics not shown VIS / V = 1075ID 40 S/D tp = =

V

100 )(ON 10 us

RD S

100 us 10 1 ms

DC

10 ms 100 ms 1010110 100012VDS / V VDS / V

Fig.6. Safe operating area. Tmb = 25 ˚C Fig.9. Typical on-state characteristics, Tj = 25 ˚C. ID & IDM = f(VDS); IDM single pulse; parameter tp ID = f(VDS); parameter VIS; tp = 250 µs February 1993 7 Rev 1.200

, RDS(ON) / mOhm BUK106-50L/S a 50 Normalised RDS(ON) = f(Tj) VIS / V = 4 40 1.5651.0 20 7 10 0.500010 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 ID / A Tj / C Fig.10. Typical on-state resistance, Tj = 25 ˚C. Fig.13. Normalised drain-source on-state resistance. RDS(ON) = f(ID); parameter VIS; tp = 250 µs a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VIS ≥ 5 V ID / A BUK106-50L/S Tj(TO) / C BUK106-50L/S 100 200 BUK106-50S BUK106-50L 0 15002468100246810 VIS / V VPS / V Fig.11. Typical transfer characteristics, Tj = 25 ˚C. Fig.14. Typical over temperature protection threshold ID = f(VIS) ; conditions: VDS = 12 V; tp = 250 µs Tj(TO) = f(VPS); conditions: VDS > 0.1 V gfs / S BUK106-50L/S PDSM% 30 100 25 80 5 2000020 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 ID / A Tmb / C Fig.12. Typical transconductance, Tj = 25 ˚C. Fig.15. Normalised limiting overload dissipation. gfs = f(ID); conditions: VDS = 12 V; tp = 250 µs PDSM% =100⋅PDSM/PDSM(25 ˚C) = f(Tmb) February 1993 8 Rev 1.200, VDDP(P) / V BUK106-50L/S Energy & Time BUK106-50L/S 50 1.0 40 0.8 max Energy / J 30 0.6 20 0.4 Time / ms 10 0.2 Tj(TO) 000246810 -60 -20 20 60 100 140 180 220 VIS / V Tmb / C Fig.16. Maximum drain source supply voltage for Fig.19. Typical overload protection characteristics. SC load protection. VDDP(P) = f(VIS); Tmb ≤ 150 ˚C Conditions: VDD = 13 V; VPS = VPSN, VIS = 8 V; SC load VPSP / V BUK106-50L/S ESC(TO) / J BUK106-50L/S 1.6 1.4 8 1.2 BUK106-50L VIS / V = min 1.056BUK106-50S 0.8 10 4 0.6 5 BUK106-50L 100.4 0.2 BUK106-50S0002468100246810 VIS / V VPS / V Fig.17. Minimum protection supply voltage Fig.20. Typical overload protection energy, Tj = 25 ˚C for SC load protection. VPSP = f(VIS); Tmb ≥ 25 ˚C ESC(TO) = f(VPS); conditions: VDS = 13 V, parameter VIS td sc / ms BUK106-50L/S ID / A BUK106-50L/S 10 50 1 PDSM 30 typ. 0.1 0.01 0 0.1 1 10 50 60 70 PD / kW VDS / V Fig.18. Typical overload protection characteristics. Fig.21. Typical clamping characteristics, 25 ˚C. td sc = f(PDS); conditions: VPS ≥ VPSP; VIS ≥ 5 V ID = f(VDS); conditions: RIS = 100 Ω; tp ≤ 50 µs February 1993 9 Rev 1.200, VIS(TO) / V IS / A BUK106-50L/S 2 max. typ. min. 0 0 -60 -40 -20 0 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 Tj / C VSD / V Fig.22. Input threshold voltage. Fig.25. Typical reverse diode current, Tj = 25 ˚C. VIS(TO) = f(Tj); conditions: ID = 1 mA; VDS = 5 V IS = f(VSDS); conditions: VIS = 0 V; tp = 250 µs IPS / mA BUK106-50L/S EDSM% 1.0 120 0.5 60000246810 12 14 0 20 40 60 80 100 120 140 VPS / V Tmb / C Fig.23. Typical DC protection supply characteristics. Fig.26. Normalised limiting clamping energy. IPS = f(VPS); normal or overload operation; Tj = 25 ˚C EDSM% = f(Tmb); conditions: ID = 27 A IISL / mA BUK106-50L/S V(CL)DSR 150 VDS VPS / V = 11 10

VDD

+ VDD9 0 ID L 100 8

VDS

7 + VPS0 - 6 VIS RF D TOPFET -ID/100 5 P500PD.U.T.F 4 IRI = RIS R 01 S shunt0246810 VIS / V Fig.24. Typical latched input characteristics, 25 ˚C. Fig.27. Clamping energy test circuit, RIS = 100 Ω.2 IISL = f(VIS); after overload protection latched EDSM = 0.5 ⋅ LID ⋅ V(CL)DSR/(V(CL)DSR − VDD) February 1993 10 Rev 1.200, VIS, VDS / V BUK106-50L/S Idsr 1 mA

VDS

100 uA

VIS

10 uA typ. 1 uA 100 nA012020 40 60 80 100 120 140 Time / us Tj / C Fig.28. Typical resistive load switching waveforms Fig.31. Typical off-state leakage current. RI = RIS = 50 Ω; RL = 10 Ω; VDD = 15 V; Tj = 25 ˚C IDSR = f(Tj); Conditions: VDS = 40 V; RIS = 100 Ω. Ips normalised to 25 C

VII

1.5

D

RI TOPFET

P

VIS PF

I S RIS

0.5 -60 -20 20 60 100 140 180 Tj / C Fig.29. External input resistances RI and RIS, Fig.32. Normalised protection supply current. generator voltage VII and input voltage VIS. IPS/IPS25 ˚C = f(Tj); VPS = VPSN Capacitance / pF BUK106-50L/S 10,000 Ciss Coss Crss 0 10 20 30 40 50 VDS / V Fig.30. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VIS = 0 V; f = 1 MHz February 1993 11 Rev 1.200,

MECHANICAL DATA

Dimensions in mm 4.5 Net Mass: 2 g max 10.3 max 1.3 3.6 2.8 5.9 min mounting base 15.8 max 2.4 max (2) 3.5 max not tinned (1) 0.5 13.5 min 0.6 min (4 x) 1.712345(4 x) 0.6 (1) 0.9 max 0.4 M 2.4 (5 x) NOTES (1) positional accuracy of the terminals is controlled in this zone only. (2) terminal dimensions in this zone are uncontrolled. Fig.33. SOT263 ( 5-pin TO220 ); pin 3 connected to mounting base. Note 1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". February 1993 12 Rev 1.200,

MECHANICAL DATA

Dimensions in mm 4.5 Net Mass: 2 g max 10.3 max 1.3 3.6 2.8 5.9 min mounting base 15.8 2.4 max max in m (2) 5 . 3.5 max R not tinned 5.6 (1) 9.75 0.5 5 in 0.6 m5123450.min (4 x) R 0.6 1.7 2.4 (4 x) 4.5 (1) 0.9 max 0.4 M 8.2 (5 x) NOTES (1) positional accuracy of the terminals is controlled in this zone only. (2) terminal dimensions in this zone are uncontrolled. Fig.34. SOT263 leadform 263-01; pin 3 connected to mounting base. Note 1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". February 1993 13 Rev 1.200,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1993 14 Rev 1.200]
15

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DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 BYD13 series Controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES • Glass passivated • High maximum operating temperature handbook, 4 columnska• L
DISCRETE SEMICONDUCTORS DATA SHEET BYD11 series Controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D122 BYD11 series Controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES • Glass passivated • High maximum operating temperature ahandbook, full pagewidt
DISCRETE SEMICONDUCTORS DATA SHEET BY8400 series Fast high-voltage soft-recovery rectifiers Product specification 1996 May 24 Supersedes data of June 1994
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D117 BY8400 series Fast high-voltage soft-recovery rectifiers Product specification 1996 May 24 Supersedes data of June 1994 File under Discrete Semiconductors, SC01 Fast high-voltage soft-recovery BY8400 series rectifiers FEATURES • Glass pas
DISCRETE SEMICONDUCTORS DATA SHEET BY8100 series Very fast high-voltage soft-recovery controlled avalanche rectifiers Product specification 1996 May 24
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D117 BY8100 series Very fast high-voltage soft-recovery controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of October 1994 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION expansion of all used parts
DISCRETE SEMICONDUCTORS DATA SHEET BY8000 series Fast high-voltage soft-recovery controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of June 1994
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D117 BY8000 series Fast high-voltage soft-recovery controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of June 1994 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION expansion of all used parts are mat
DATA SHEET BY614 Miniature high-voltage soft-recovery rectifier
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D189 BY614 Miniature high-voltage soft-recovery rectifier Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION expansion of all used parts are matched. • Glass passivated
DISCRETE SEMICONDUCTORS DATA SHEET BY584 High-voltage soft-recovery rectifier Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D189 BY584 High-voltage soft-recovery rectifier Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION expansion of all used parts are matched. • Glass passivated Rugged gla
DISCRETE SEMICONDUCTORS DATA SHEET BY527 Controlled avalanche rectifier Product specification 1996 Jun 11 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BY527 Controlled avalanche rectifier Product specification 1996 Jun 11 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • G
DISCRETE SEMICONDUCTORS DATA SHEET BY505 High-voltage soft-recovery rectifier Product specification 1996 May 28 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D189 BY505 High-voltage soft-recovery rectifier Product specification 1996 May 28 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION expansion of all used parts are matched. • Glass passivated Rugged gla
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOD100 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT rectifier diode in a full pack plastic envelope, featuring fast forward VRRM Repetitive peak reverse voltage 1500 V recovery and low forward recovery VF Forward voltage 1.2 V voltage. The device is i
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AC PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT rectifier diode in a plastic envelope, featuring fast forward recovery and VRRM Repetitive peak reverse voltage 1500 V low forward recovery voltage. The VF Forward voltage 1.2 V device is intended fo
DISCRETE SEMICONDUCTORS DATA SHEET BY448 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BY448 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Ru
DISCRETE SEMICONDUCTORS DATA SHEET BY428 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY428 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Ru
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOD113 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT rectifier diode in a full pack plastic envelope featuring low forward VRRM Repetitive peak reverse voltage 1500 V voltage drop, fast reverse recovery VF Forward voltage 1.5 V and soft recovery charac
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOD100 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT rectifier diode in a full pack plastic envelope featuring low forward VRRM Repetitive peak reverse voltage 1500 V voltage drop, fast reverse recovery VF Forward voltage 1.5 V and soft recovery charac