Download: DESCRIPTION QUICK REFERENCE DATA APPLICATIONS VIS = 5 V

DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET ina3pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 45 A purpose switch for automotive PD Total power dissipation 125 W systems and other applications. Tj Continuous junction temperature 150 ˚C RDS(ON) Drain-source on-state resistance 35 mΩ APPLICATIONS VIS = 5 V General controller for driving lamps motors solenoids heaters FEATURES FUNCTIONAL BLOCK DIAGRAM Vertical power DMOS output stage DRAIN Low o...
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DESCRIPTION QUICK REFERENCE DATA

Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET ina3pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 45 A purpose switch for automotive PD Total power dissipation 125 W systems and other applications. Tj Continuous junction temperature 150 ˚C RDS(ON) Drain-source on-state resistance 35 mΩ

APPLICATIONS VIS = 5 V

General controller for driving lamps motors solenoids heaters

FEATURES FUNCTIONAL BLOCK DIAGRAM

Vertical power DMOS output stage DRAIN Low on-state resistance Overload protection against over temperature Overload protection against O/V short circuit load Latched overload protection CLAMP reset by input POWERINPUT5Vinput level RIG MOSFET Low threshold voltage also allows5Vcontrol Control of power MOSFET and supply of overload LOGIC AND protection circuits PROTECTION derived from input ESD protection on input pin Overvoltage clamping for turn off of inductive loads

SOURCE

Fig.1. Elements of the TOPFET.

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PIN DESCRIPTION tabD1input TOPFET 2 drain I

P

3 source tab drain123SJanuary 1993 1 Rev 1.200,

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Continuous off-state drain source VIS = 0 V - 50 V voltage1 VIS Continuous input voltage - 06VID Continuous drain current Tmb ≤ 25 ˚C; VIS = 5 V - 45 A ID Continuous drain current Tmb ≤ 100 ˚C; VIS = 5 V - 28 A IDRM Repetitive peak on-state drain current Tmb ≤ 25 ˚C; VIS = 5 V - 180 A PD Total power dissipation Tmb ≤ 25 ˚C - 125 W Tstg Storage temperature - -55 150 ˚C Tj Continuous junction temperature 2 normal operation - 150 ˚C Tsold Lead temperature during soldering - 250 ˚C

OVERLOAD PROTECTION LIMITING VALUES

With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V 3ISP Protection supply voltage for valid protection 4 - V Over temperature protection VDDP(T) Protected drain source supply voltage VIS = 5 V - 50 V Short circuit load protection VDDP(P) Protected drain source supply voltage 4 VIS = 5 V - 24 V PDSM Instantaneous overload dissipation Tmb = 25 ˚C - 2.1 kW

OVERVOLTAGE CLAMPING LIMITING VALUES

At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IDROM Repetitive peak clamping current VIS = 0 V - 45 A EDSM Non-repetitive clamping energy Tmb ≤ 25 ˚C; IDM = 25 A; - 1 J VDD ≤ 25 V; inductive load EDRM Repetitive clamping energy Tmb ≤ 85 ˚C; IDM = 16 A; - 80 mJ VDD ≤ 20 V; f = 250 Hz

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VC Electrostatic discharge capacitor Human body model; - 2 kV voltage C = 250 pF; R = 1.5 kΩ 1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 3 The input voltage for which the overload protection circuits are functional. 4 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed VDDP(P) maximum. For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS. January 1993 2 Rev 1.200,

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Thermal resistance Rth j-mb Junction to mounting base - - 0.8 1.0 K/W Rth j-a Junction to ambient in free air - 60 - K/W

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(CL)DSS Drain-source clamping voltage VIS = 0 V; ID = 10 mA 50 - - V V(CL)DSS Drain-source clamping voltage VIS = 0 V; IDM = 2 A; tp ≤ 300 µs; - - 70Vδ≤ 0.01 IDSS Zero input voltage drain current VDS = 12 V; VIS = 0 V - 0.5 10 µA IDSS Zero input voltage drain current VDS = 50 V; VIS = 0 V - 1 20 µA IDSS Zero input voltage drain current VDS = 40 V; VIS = 0 V; Tj = 125 ˚C - 10 100 µA RDS(ON) Drain-source on-state IDM = 25 A; VIS = 5 V - 30 35 mΩ resistance tp ≤ 300 µs; δ ≤ 0.01

OVERLOAD PROTECTION CHARACTERISTICS

TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Short circuit load protection1 Tmb = 25 ˚C; L ≤ 10 µH EDS(TO) Overload threshold energy VDD = 13 V; VIS = 5 V - 1.1 - J td sc Response time VDD = 13 V; VIS = 5 V - 0.8 - ms Over temperature protection Tj(TO) Threshold junction temperature VIS = 5 V; from ID ≥ 2 A2 150 - - ˚C

INPUT CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified. The supply for the logic and overload protection is taken from the input. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIS(TO) Input threshold voltage VDS = 5 V; ID = 1 mA 1.0 1.5 2.0 V IIS Input supply current VIS = 5 V; normal operation - 0.2 0.35 mA VISR Protection reset voltage 3 2.0 2.6 3.5 V VISR Protection reset voltage Tj = 150 ˚C 1.0 - - IISL Input supply current VIS = 5 V; protection latched 2 3.8 10 mA V(BR)IS Input clamp voltage II = 10 mA 6 - - V RIG Input series resistance to gate of power MOSFET - 1.5 - kΩ 1 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for PDSM, which is always the case when VDS is less than VDSP maximum. Refer to OVERLOAD PROTECTION LIMITING VALUES. 2 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum ID ensures this condition. 3 The input voltage below which the overload protection circuits will be reset. January 1993 3 Rev 1.200,

TRANSFER CHARACTERISTICS

Tmb = 25 ˚C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT gfs Forward transconductance VDS = 10 V; IDM = 25 A tp ≤ 300 µs; 17 28 - S δ ≤ 0.01 ID(SC) Drain current 1 VDS = 13 V; VIS = 5 V - 60 - A

SWITCHING CHARACTERISTICS

Tmb = 25 ˚C. RI = 50 Ω . Refer to waveform figures and test circuits. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT td on Turn-on delay time VDD = 13 V; VIS = 5 V - 2 - µs tr Rise time resistive load RL = 1.1 Ω - 8 - µs td off Turn-off delay time VDD = 13 V; VIS = 0 V - 8 - µs tf Fall time resistive load RL = 1.1 Ω - 8 - µs td on Turn-on delay time VDD = 13 V; VIS = 5 V - 3.7 - µs tr Rise time inductive load IDM = 11 A - 3.7 - µs td off Turn-off delay time VDD = 13 V; VIS = 0 V - 13 - µs tf Fall time inductive load IDM = 11 A - 1.4 - µs

REVERSE DIODE LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IS Continuous forward current Tmb ≤ 25 ˚C; VIS = 0 V - 50 A

REVERSE DIODE CHARACTERISTICS

Tmb = 25 ˚C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VSDS Forward voltage IS = 50 A; VIS = 0 V; tp = 300 µs - 1.0 1.5 V trr Reverse recovery time not applicable 2 - - - -

ENVELOPE CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Ld Internal drain inductance Measured from contact screw on - 3.5 - nH tab to centre of die Ld Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die Ls Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad 1 During overload before short circuit load protection operates. 2 The reverse diode of this type is not intended for applications requiring fast reverse recovery. January 1993 4 Rev 1.200, Normalised Power Derating Zth / (K/W) BUK102-50GL 120 PD% 10 901D= 80 0.5 70 0.2 60 0.1 0.1 50 0.05 40 0.02 30 0.01 P tp tp0DD= TTt00.001 0 20 40 60 80 100 120 140 1E-07 1E-05 1E-03 1E-01 1E+01 Tmb / C t / s

Fig.2. Normalised limiting power dissipation. Fig.5. Transient thermal impedance. PD% = 100⋅PD/PD(25 ˚C) = f(Tmb) Zth j-mb = f(t); parameter D = tp/T

ID% Normalised Current Derating ID / A BUK102-50GL 120 120 110 110 VIS / V = 100 100 90 90 6.0 80 80 5.5 70 70 5.0 60 60 4.5 50 50 4.0 40 40 30 30 3.5 20 20 3.0 10 10 2.500020 40 60 80 100 120 1400246810 12 14 16 18 20 Tmb / C VDS / V

Fig.3. Normalised continuous drain current. Fig.6. Typical output characteristics, Tj = 25 ˚C. ID% = 100⋅ID/ID(25 ˚C) = f(Tmb); conditions: VIS = 5 V ID = f(VDS); parameter VIS; tp = 250 µs & tp < td sc

ID & IDM / A BUK102-50GL ID / A BUK102-50GL 1000 100 Overload protection characteristics not shown 90 VIS / V = 80 5.0D

DS

/I tp =

V

= 70 100 (ON ) S 10 us 4.5 RD 60 100 us 50 4.0 10 1 ms 3.5 DC 30 10 ms 20 3.0 100 ms 10 2.510110 100012345VDS / V VDS / V

Fig.4. Safe operating area. Tmb = 25 ˚C Fig.7. Typical on-state characteristics, Tj = 25 ˚C. ID & IDM = f(VDS); IDM single pulse; parameter tp ID = f(VDS); parameter VIS; tp = 250 µs January 1993 5 Rev 1.200

, RDS(ON) / mOhm BUK102-50GL a 100 Normalised RDS(ON) = f(Tj) 1.5 VIS / V = 3 3.5 4.5 1.0 50 5 0.500020 40 60 80 -60 -40 -20 0 20 40 60 80 100 120 140 ID / A Tj / C Fig.8. Typical on-state resistance, Tj = 25 ˚C. Fig.11. Normalised drain-source on-state resistance. RDS(ON) = f(ID); parameter VIS; tp = 250 µs a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VIS = 5 V ID / A BUK102-50GL td sc / ms BUK102-50GL 100 10

PDSM

01234560.1 0.1 1 10 VIS / V PDS / kW Fig.9. Typical transfer characteristics, Tj = 25 ˚C. Fig.12. Typical overload protection characteristics. ID = f(VIS) ; conditions: VDS = 10 V; tp = 250 µs td sc = f(PDS); conditions: VIS ≥ 4 V; Tj = 25 ˚C. gfs / S BUK102-50GL PDSM% 10 4000050 100 -60 -40 -20 0 20 40 60 80 100 120 140 ID / A Tmb / C Fig.10. Typical transconductance, Tj = 25 ˚C. Fig.13. Normalised limiting overload dissipation. gfs = f(ID); conditions: VDS = 10 V; tp = 250 µs PDSM% =100⋅PDSM/PDSM(25 ˚C) = f(Tmb) January 1993 6 Rev 1.200, Energy & Time BUK102-50GL IIS / uA BUK102-50GL 1.5 500 Energy / J 1.0 Time / ms 200 0.5 Tj(TO) 0 0 -60 -20 20 60 100 140 180 22002468Tmb / C VIS / V Fig.14. Typical overload protection characteristics. Fig.17. Typical DC input characteristics, Tj = 25 ˚C. Conditions: VDD = 13 V; VIS = 5 V; SC load = 30 mΩ IIS = f(VIS); normal operation ID / A BUK102-50GL IIS / mA BUK102-50GL 50 5 PROTECTION LATCHED 40 4 30 typ. 3 RESET 20 2 10 1 NORMAL0050 60 7002468VDS / V VIS / V Fig.15. Typical clamping characteristics, 25 ˚C. Fig.18. Typical DC input characteristics, Tj = 25 ˚C. ID = f(VDS); conditions: VIS = 0 V; tp ≤ 50 µs IISL = f(VIS); overload protection operated ⇒ ID = 0 A VIS(TO) / V IS / A BUK102-50GL max. typ. min. 0 0 -60 -40 -20 0 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 Tj / C VSD / V Fig.16. Input threshold voltage. Fig.19. Typical reverse diode current, Tj = 25 ˚C. VIS(TO) = f(Tj); conditions: ID = 1 mA; VDS = 5 V IS = f(VSDS); conditions: VIS = 0 V; tp = 250 µs January 1993 7 Rev 1.200, VDD VDD = VCL RL LDtp: adjust for correct IDDDTOPFET TOPFETIIPD.U.T. P D.U.T. RIRIVIS S VIS S ID measure ID measure 0V 0V 0R1 0R1

Fig.20. Test circuit for resistive load switching times. Fig.23. Test circuit for inductive load switching times.

RESISTIVE TURN-ON BUK102-50GL INDUCTIVE TURN-ON BUK102-50GL VDS / V 10 VDS / V ID / A ID / A 90% 10 90% td on tr td on tr VIS / V VIS / V 5 10% 10% 10% 10% 00010 20 0 10 20 Time / us Time / us

Fig.21. Typical switching waveforms, resistive load. Fig.24. Typical switching waveforms, inductive load. VDD = 13 V; RL = 1.1 Ω; RI = 50 Ω, Tj = 25 ˚C. VDD = 13 V; ID = 11 A; RI = 50 Ω, Tj = 25 ˚C.

RESISTIVE TURN-OFF BUK102-50GL INDUCTIVE TURN-OFF BUK102-50GL ID / A VDS / V 10 90% VDS / V ID / A 10 90% td off tf td off tf VIS / V 5 90% 90% VIS / V 10% 10% 0 0 -1 0 10 20 0 10 20 Time / us Time / us

Fig.22. Typical switching waveforms, resistive load. Fig.25. Typical switching waveforms, inductive load. VDD = 13 V; RL = 1.1 Ω; RI = 50 Ω, Tj = 25 ˚C. VDD = 13 V; ID = 11 A; RI = 50 Ω, Tj = 25 ˚C. January 1993 8 Rev 1.200

, EDSM% Iiso normalised to 25 C 100 1.5 50100.5 0 20 40 60 80 100 120 140 -60 -20 20 60 100 140 180 Tmb / C Tj / C

Fig.26. Normalised limiting clamping energy. Fig.29. Normalised input current (normal operation). EDSM% = f(Tmb); conditions: ID = 25 A; VIS = 10 V IIS/IIS25 ˚C = f(Tj); VIS = 5 V

V(CL)DSS Iisl normalised to 25 C

VDS

VDD VDD 0 + 1.5 ID L

VDS

0 - VIS D TOPFET -ID/10010D.U.T.I

P

Schottky R 01 RIS S shunt 0.5 -60 -20 20 60 100 140 180

Ω Tj / CFig.27. Clamping energy test circuit, RIS = 50 .

E = 0.5 ⋅ LI2 ⋅ V /(V − V ) Fig.30. Normalised input current (protection latched).DSM D (CL)DSS (CL)DSS DD IISL/IISL25 ˚C = f(Tj); VIS = 5 V Idss 1 mA 100 uA 10 uA typ. 1 uA 100 nA 0 20 40 60 80 100 120 140 Tj / C

Fig.28. Typical off-state leakage current. IDSS = f(Tj); Conditions: VDS = 40 V; IIS = 0 V. January 1993 9 Rev 1.200

, MECHANICAL DATA Dimensions in mm 4,5 Net Mass: 2 g max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max123(2x) 0,9 max (3x) 0,6 2,54 2,54 2,4 Fig.31. TO220AB; pin 2 connected to mounting base. Notes 1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". January 1993 10 Rev 1.200,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 1993 11 Rev 1.200]
15

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GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. MAX. MAX. UNIT rectifier diodes in a plastic envelope featuring low forward voltage drop, BY329 -800 -1000 -1200 fast reverse recovery and soft VRRM Repetitive peak reverse 800 1000 1200 V recovery charac
DISCRETE SEMICONDUCTORS DATA SHEET BY328 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY328 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Ru