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DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET ina3pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 26 A purpose switch for automotive PD Total power dissipation 75 W systems and other applications. Tj Continuous junction temperature 150 ˚C RDS(ON) Drain-source on-state resistance 60 mΩ APPLICATIONS IISL Input supply current VIS = 5 V 650 µA General controller for driving lamps motors solenoids heaters FEATURES FUNCTIONAL BLOCK DIAGRAM Vertical pow...
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DESCRIPTION QUICK REFERENCE DATA

Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET ina3pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 26 A purpose switch for automotive PD Total power dissipation 75 W systems and other applications. Tj Continuous junction temperature 150 ˚C RDS(ON) Drain-source on-state resistance 60 mΩ

APPLICATIONS

IISL Input supply current VIS = 5 V 650 µA General controller for driving lamps motors solenoids heaters

FEATURES FUNCTIONAL BLOCK DIAGRAM

Vertical power DMOS output stage DRAIN Low on-state resistance Overload protection against over temperature Overload protection against O/V short circuit load Latched overload protection CLAMP reset by input POWERINPUT5Vlogic compatible input level RIG MOSFET Control of power MOSFET and supply of overload protection circuits derived from input LOGIC AND Lower operating input current PROTECTION permits direct drive by micro-controller ESD protection on input pin Overvoltage clamping for turn off of inductive loads SOURCE Fig.1. Elements of the TOPFET.

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PIN DESCRIPTION tabD1input TOPFET 2 drain I

P

3 source tab drain123SApril 1993 1 Rev 1.100,

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Continuous drain source voltage 1 - - 50 V VIS Continuous input voltage - 06VID Continuous drain current Tmb ≤ 25 ˚C; VIS = 5 V - 26 A ID Continuous drain current Tmb ≤ 100 ˚C; VIS = 5 V - 16 A IDRM Repetitive peak on-state drain current Tmb ≤ 25 ˚C; VIS = 5 V - 100 A PD Total power dissipation Tmb ≤ 25 ˚C - 75 W Tstg Storage temperature - -55 150 ˚C T Continuous junction temperature2j normal operation - 150 ˚C Tsold Lead temperature during soldering - 250 ˚C

OVERLOAD PROTECTION LIMITING VALUES

With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VISP Protection supply voltage 3 for valid protection 4 - V Over temperature protection VDDP(T) Protected drain source supply voltage VIS = 5 V - 50 V Short circuit load protection4 VDDP(P) Protected drain source supply voltage 5 VIS = 5 V - 20 V PDSM Instantaneous overload dissipation Tmb = 25 ˚C - 1.3 kW

OVERVOLTAGE CLAMPING LIMITING VALUES

At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IDROM Repetitive peak clamping current VIS = 0 V - 26 A EDSM Non-repetitive clamping energy Tmb ≤ 25 ˚C; IDM = 26 A; - 625 mJ VDD ≤ 20 V; inductive load EDRM Repetitive clamping energy Tmb ≤ 95 ˚C; IDM = 8 A; - 40 mJ VDD ≤ 20 V; f = 250 Hz

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VC Electrostatic discharge capacitor Human body model; - 2 kV voltage C = 250 pF; R = 1.5 kΩ 1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 3 The input voltage for which the overload protection circuits are functional. 4 For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS. 5 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for PDSM, which is always the case when VDS is less than VDDP(P) maximum. April 1993 2 Rev 1.100,

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Thermal resistance Rth j-mb Junction to mounting base - - 1.3 1.67 K/W Rth j-a Junction to ambient in free air - 60 - K/W

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(CL)DSS Drain-source clamping voltage VIS = 0 V; ID = 10 mA 50 - - V V(CL)DSS Drain-source clamping voltage VIS = 0 V; IDM = 2 A; tp ≤ 300 µs; - - 70Vδ≤ 0.01 IDSS Zero input voltage drain current VDS = 12 V; VIS = 0 V - 0.5 10 µA IDSS Zero input voltage drain current VDS = 50 V; VIS = 0 V - 1 20 µA IDSS Zero input voltage drain current VDS = 40 V; VIS = 0 V; Tj = 125 ˚C - 10 100 µA RDS(ON) Drain-source on-state VIS = 5 V; IDM = 13 A; tp ≤ 300 µs; - 45 60 mΩ resistance1 δ ≤ 0.01

OVERLOAD PROTECTION CHARACTERISTICS

TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Short circuit load protection2 Tmb = 25 ˚C; L ≤ 10 µH; RL = 10 mΩ EDS(TO) Overload threshold energy VDD = 13 V; VIS = 5 V - 0.4 - J td sc Response time VDD = 13 V; VIS = 5 V - 0.8 - ms I 3D(SC) Drain current VDD = 13 V; VIS = 5 V - 45 - A IDM(SC) Peak drain current 4 VIS = 5 V; VDD = 13 V - 105 - A Over temperature protection Tj(TO) Threshold junction temperature VIS = 5 V; from ID ≥ 1 A5 150 - - ˚C

TRANSFER CHARACTERISTIC

Tmb = 25 ˚C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT gfs Forward transconductance VDS = 10 V; IDM = 13 A tp ≤ 300 µs; 10 16 - S δ ≤ 0.01 1 Continuous input voltage. The specified pulse width is for the drain current. 2 Refer to OVERLOAD PROTECTION LIMITING VALUES. 3 Continuous drain-source supply voltage. Pulsed input voltage. 4 Continuous input voltage. Momentary short circuit load connection. (The higher peak current is due to the effect of capacitance Cgd). 5 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum ID ensures this condition. April 1993 3 Rev 1.100,

INPUT CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified. The supply for the logic and overload protection is taken from the input. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIS(TO) Input threshold voltage VDS = 5 V; ID = 1 mA 1.0 1.5 2.0 V IIS Input supply current normal operation; VIS = 5 V 100 200 350 µA VIS = 4 V - 160 270 µA VISR Protection reset voltage 1 Tj = 25 ˚C 2.0 2.6 3.5 V Tj = 150 ˚C 1.0 - - IISL Input supply current protection latched; VIS = 5 V - 330 650 µA VIS = 3.5 V - 240 430 µA V(BR)IS Input breakdown voltage II = 10 mA 6 - - V RIG Input series resistance Tj = 25 ˚C - 33 - kΩ to gate of power MOSFET Tj = 150 ˚C - 50 - kΩ

SWITCHING CHARACTERISTICS

Tmb = 25 ˚C. RI = 50 Ω . Refer to waveform figure and test circuit. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT td on Turn-on delay time VDD = 13 V; VIS = 5 V - 17 - µs tr Rise time resistive load RL = 2.1 Ω - 75 - µs td off Turn-off delay time VDD = 13 V; VIS = 0 V - 60 - µs tf Fall time resistive load RL = 2.1 Ω - 70 - µs

REVERSE DIODE LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IS Continuous forward current Tmb ≤ 25 ˚C; VIS = 0 V - 26 A

REVERSE DIODE CHARACTERISTICS

Tmb = 25 ˚C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VSDO Forward voltage IS = 26 A; VIS = 0 V; tp = 300 µs - 1.0 1.5 V trr Reverse recovery time not applicable 2 - - - - 1 The input voltage below which the overload protection circuits will be reset. 2 The reverse diode of this type is not intended for applications requiring fast reverse recovery. April 1993 4 Rev 1.100,

ENVELOPE CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Ld Internal drain inductance Measured from contact screw on - 3.5 - nH tab to centre of die Ld Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die Ls Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad Normalised Power Derating BUK101-50DL 120 PD% ID & IDM / A1000 110 Overload protection characteristics not shown /ID 80 100 VD

S

N) =

DS

(O 60 R tp = 50 100 us 40 10 1 ms

DC

20 10 ms 10 100 ms01020 40 60 80 100 120 140 1 10 100 Tmb / C VDS / V Fig.2. Normalised power dissipation. Fig.4. Safe operating area. Tmb = 25 ˚C PD% = 100⋅PD/PD(25 ˚C) = f(Tmb) ID & IDM = f(VDS); IDM single pulse; parameter tp ID% Normalised Current Derating Zth / (K/W) BUK101-50DL 120 10 90 D = 80 1 0.5 60 0.2 50 0.1 40 0.1 0.05 30 PD tp D = t p 0.02TTt0 0 0.01 0 20 40 60 80 100 120 140 1E-07 1E-05 1E-03 1E-01 1E+01 Tmb / C t / s Fig.3. Normalised continuous drain current. Fig.5. Transient thermal impedance. ID% = 100⋅ID/ID(25 ˚C) = f(Tmb); conditions: VIS = 5 V Zth j-mb = f(t); parameter D = tp/T April 1993 5 Rev 1.100, ID / A BUK101-50DL td sc / ms BUK101-50DL 50 100 VIS / V = 5.5 4.5 10

PDSM

3.5 1 10300.10123450.1 1 10 VDS / V PDS / kW

Fig.6. Typical on-state characteristics, Tj = 25 ˚C. Fig.9. Typical overload protection characteristics. ID = f(VDS); parameter VIS; tp = 2 ms td sc = f(PDS); conditions: VIS ≥ 4 V; Tj = 25 ˚C.

RDS / mOhm BUK101-50DL PDSM% VIS / V = 120 100 4.53.554100 5.5 80 6 40 40 20 2000020 40 -60 -40 -20 0 20 40 60 80 100 120 140 ID / A Tmb / C

Fig.7. Typical on-state resistance, Tj = 25 ˚C. Fig.10. Normalised limiting overload dissipation. RDS(ON) = f(ID); parameter VIS; tp = 2 ms PDSM% =100⋅PDSM/PDSM(25 ˚C) = f(Tmb)

a Normalised RDS(ON) = f(Tj) Energy & Time BUK101-50DL 1.5 Time / ms 1.0 0.5 0.5 Energy / J Tj(TO) 0 0 -60 -40 -20 0 20 40 60 80 100 120 140 -60 -20 20 60 100 140 180 220 Tj / C Tmb / C

Fig.8. Normalised drain-source on-state resistance. Fig.11. Typical overload protection characteristics.

a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 13 A; VIS = 5 V Conditions: VDD = 13 V; VIS = 5 V; SC load = 30 mΩ

April 1993 6 Rev 1.100

, ID / A BUK101-50DL IS / A BUK101-50DL 30 100 typ. 500050 60 70012VIS / V VSD / V Fig.12. Typical clamping characteristics, 25 ˚C. Fig.15. Typical reverse diode current, Tj = 25 ˚C. ID = f(VDS); conditions: VIS = 0 V; tp ≤ 50 µs IS = f(VSDS); conditions: VIS = 0 V VIS(TO) / V

VDD

max.

RL

typ.

D

min. 1 TOPFET

I

P D.U.T. R I VISS0ID measure -60 -40 -20 0 20 40 60 80 100 120 140 0V Tj / C 0R1 Fig.13. Input threshold voltage. Fig.16. Test circuit for resistive load switching times. VIS(TO) = f(Tj); conditions: ID = 1 mA; VDS = 5 V IISL & IIS / uA BUK101-50DL 600 VIS / V & VDS / V BUK101-50DL 500 PROTECTION LATCHED

VDS

400 10

IISL

300 RESET

VIS IIS

200 5 100 NORMAL02460200 400 600 VIS / V time / us Fig.14. Typical DC input characteristics, Tj = 25 ˚C. Fig.17. Typical switching waveforms, resistive load. IISL & IIS = f(VIS); protection latched & normal operation VDD = 13 V; RL = 2.1 Ω; RI = 50 Ω, Tj = 25 ˚C. April 1993 7 Rev 1.100, EDSM% Idss 120 1 mA 90 100 uA 60 10 uA 50 typ. 30 1 uA 0 100 nA 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 Tmb / C Tj / C Fig.18. Normalised clamping energy rating. Fig.20. Typical off-state leakage current. EDSM% = f(Tmb); conditions: ID = 26 A; VIS = 5 V IDSS = f(Tj); Conditions: VDS = 40 V; IIS = 0 V. V(CL)DSS Iiso & Iisl normalised to 25 C

VDS VDD

0 +

VDD

1.5 ID L

VDS

0 - VIS D TOPFET -ID/10010D.U.T.I

P

Schottky R 01 RIS S shunt 0.5 -60 -20 20 60 100 140 180 Tj / C Fig.19. Clamping energy test circuit, RIS = 50 Ω. = ⋅ 2 ⋅ /( − ) Fig.21. Normalised input currents (normal & latched).EDSM 0.5 LID V(CL)DSS V(CL)DSS VDD IISO/IISO25˚C & IISL/IISL25˚C = f(Tj); VIS = 5 V April 1993 8 Rev 1.100, MECHANICAL DATA Dimensions in mm 4,5 Net Mass: 2 g max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max123(2x) 0,9 max (3x) 0,6 2,54 2,54 2,4 Fig.22. TO220AB; pin 2 connected to mounting base. Notes 1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". April 1993 9 Rev 1.100,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1993 10 Rev 1.100]
15

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