Download: DESCRIPTION QUICK REFERENCE DATA APPLICATIONS VIS = 5 V
DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET ina3pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 13.5 A purpose switch for automotive PD Total power dissipation 40 W systems and other applications. Tj Continuous junction temperature 150 ˚C RDS(ON) Drain-source on-state resistance 125 mΩ APPLICATIONS VIS = 5 V General controller for driving lamps motors solenoids heaters FEATURES FUNCTIONAL BLOCK DIAGRAM Vertical power DMOS output stage DRAIN Low...
Author:
Sheyes1981 Shared: 8/19/19
Downloads: 48 Views: 1443
Content
DESCRIPTION QUICK REFERENCE DATA
Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET ina3pin plastic VDS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 13.5 A purpose switch for automotive PD Total power dissipation 40 W systems and other applications. Tj Continuous junction temperature 150 ˚C RDS(ON) Drain-source on-state resistance 125 mΩAPPLICATIONS VIS = 5 V
General controller for driving lamps motors solenoids heatersFEATURES FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS output stage DRAIN Low on-state resistance Overload protection against over temperature Overload protection against O/V short circuit load Latched overload protection CLAMP reset by input POWERINPUT5Vlogic compatible input level RIG MOSFET Control of power MOSFET and supply of overload protection circuits derived from input LOGIC AND Low operating input current PROTECTION ESD protection on input pin Overvoltage clamping for turn off of inductive loadsSOURCE
Fig.1. Elements of the TOPFET.PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION tabD1input TOPFET 2 drain IP
3 source tab drain123SJanuary 1993 1 Rev 1.200,LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Continuous off-state drain source VIS = 0 V - 50 V voltage1 VIS Continuous input voltage - 06VID Continuous drain current Tmb ≤ 25 ˚C; VIS = 5 V - 13.5 A ID Continuous drain current Tmb ≤ 100 ˚C; VIS = 5 V - 8.5 A IDRM Repetitive peak on-state drain current Tmb ≤ 25 ˚C; VIS = 5 V - 54 A PD Total power dissipation Tmb ≤ 25 ˚C - 40 W Tstg Storage temperature - -55 150 ˚C Tj Continuous junction temperature 2 normal operation - 150 ˚C Tsold Lead temperature during soldering - 250 ˚COVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V 3ISP Protection supply voltage for valid protection 4 - V Over temperature protection VDDP(T) Protected drain source supply voltage VIS = 5 V - 50 V Short circuit load protection VDDP(P) Protected drain source supply voltage 4 VIS = 5 V - 35 V PDSM Instantaneous overload dissipation Tmb = 25 ˚C - 0.6 kWOVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IDROM Repetitive peak clamping current VIS = 0 V - 15 A EDSM Non-repetitive clamping energy Tmb ≤ 25 ˚C; IDM = 15 A; - 200 mJ VDD ≤ 20 V; inductive load EDRM Repetitive clamping energy Tmb ≤ 95 ˚C; IDM = 4 A; - 20 mJ VDD ≤ 20 V; f = 250 HzESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VC Electrostatic discharge capacitor Human body model; - 2 kV voltage C = 250 pF; R = 1.5 kΩ 1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 3 The input voltage for which the overload protection circuits are functional. 4 The device is able to self-protect against a short circuit load providing the drain-source supply voltage does not exceed VDDP(P) maximum. For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS. January 1993 2 Rev 1.200,THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Thermal resistance Rth j-mb Junction to mounting base - - 2.5 3.1 K/W Rth j-a Junction to ambient in free air - 60 - K/WSTATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(CL)DSS Drain-source clamping voltage VIS = 0 V; ID = 10 mA 50 - - V V(CL)DSS Drain-source clamping voltage VIS = 0 V; IDM = 2 A; tp ≤ 300 µs; - - 70Vδ≤ 0.01 IDSS Zero input voltage drain current VDS = 12 V; VIS = 0 V - 0.5 10 µA IDSS Zero input voltage drain current VDS = 50 V; VIS = 0 V - 1 20 µA IDSS Zero input voltage drain current VDS = 40 V; VIS = 0 V; Tj = 125 ˚C - 10 100 µA RDS(ON) Drain-source on-state VIS = 5 V; IDM = 7.5 A; tp ≤ 300 µs; - 85 125 mΩ resistance δ ≤ 0.01OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Short circuit load protection1 Tmb = 25 ˚C; L ≤ 10 µH EDS(TO) Overload threshold energy VDD = 13 V; VIS = 5 V - 0.2 - J td sc Response time VDD = 13 V; VIS = 5 V - 0.8 - ms Over temperature protection Tj(TO) Threshold junction temperature VIS = 5 V; fromID≥ 1 A 150 - - ˚CINPUT CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified. The supply for the logic and overload protection is taken from the input. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIS(TO) Input threshold voltage VDS = 5 V; ID = 1 mA 1.0 1.5 2.0 V IIS Input supply current VIS = 5 V; normal operation - 0.2 0.35 mA VISR Protection reset voltage 3 2.0 2.6 3.5 V VISR Protection reset voltage Tj = 150 ˚C 1.0 - - IISL Input supply current VIS = 5 V; protection latched 0.5 1.2 2.0 mA V(BR)IS Input clamp voltage II = 10 mA 6 - - V RIG Input series resistance to gate of power MOSFET - 4 - kΩ 1 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for PDSM, which is always the case when VDS is less than VDSP maximum. Refer to OVERLOAD PROTECTION LIMITING VALUES. 2 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum ID ensures this condition. 3 The input voltage below which the overload protection circuits will be reset. January 1993 3 Rev 1.200,TRANSFER CHARACTERISTICS
Tmb = 25 ˚C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT gfs Forward transconductance VDS = 10 V; IDM = 7.5 A tp ≤ 300 µs; 5 9 - S δ ≤ 0.01 ID(SC) Drain current 1 VDS = 13 V; VIS = 5 V - 25 - ASWITCHING CHARACTERISTICS
Tmb = 25 ˚C. RI = 50 Ω . Refer to waveform figures and test circuits. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT td on Turn-on delay time VDD = 13 V; VIS = 5 V - 1.5 - µs tr Rise time resistive load RL = 4 Ω - 8 - µs td off Turn-off delay time VDD = 13 V; VIS = 0 V - 6 - µs tf Fall time resistive load RL = 4 Ω - 4.5 - µs td on Turn-on delay time VDD = 13 V; VIS = 5 V - 1.5 - µs tr Rise time inductive load IDM = 3 A - 1 - µs td off Turn-off delay time VDD = 13 V; VIS = 0 V - 10 - µs tf Fall time inductive load IDM = 3 A - 0.5 - µsREVERSE DIODE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IS Continuous forward current Tmb ≤ 25 ˚C; VIS = 0 V - 13.5 AREVERSE DIODE CHARACTERISTICS
Tmb = 25 ˚C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VSDS Forward voltage IS = 15 A; VIS = 0 V; tp = 300 µs - 1.0 1.5 V trr Reverse recovery time not applicable 2 - - - -ENVELOPE CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Ld Internal drain inductance Measured from contact screw on - 3.5 - nH tab to centre of die Ld Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die Ls Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad 1 During overload before short circuit load protection operates. 2 The reverse diode of this type is not intended for applications requiring fast reverse recovery. January 1993 4 Rev 1.200, Normalised Power Derating Zth / (K/W) 120 PD% BUK100-50GL10 100 D = 90 0.5 80 1 70 0.2 60 0.1 50 0.05 40 0.1 0.02 30 PD tp D = tpT
Tt00.01 0 20 40 60 80 100 120 140 1E-07 1E-05 1E-03 1E-01 1E+01 Tmb / C t / sFig.2. Normalised limiting power dissipation. Fig.5. Transient thermal impedance. PD% = 100⋅PD/PD(25 ˚C) = f(Tmb) Zth j-mb = f(t); parameter D = tp/T
ID% Normalised Current Derating ID / A BUK100-50GL 120 40 110 VIS / V = 90 30 6 25 5.5 60 20 4.5 15 4 30 10 3.5 20 3 10 2.500020 40 60 80 100 120 14004812 16 20 24 28 32 Tmb / C VDS / VFig.3. Normalised continuous drain current. Fig.6. Typical output characteristics, Tj = 25 ˚C. ID% = 100⋅ID/ID(25 ˚C) = f(Tmb); conditions: VIS = 5 V ID = f(VDS); parameter VIS; tp = 250 µs & tp < td sc
ID & IDM / A BUK100-50GL ID / A BUK100-50GL 100 40 S/I D tp = VIS / V = 6 = V D 35 ) (ON 10 usS 5.5 RD 30 10 5 100 us 25 4.5 1 ms 20DC
10 ms 415 1 100 ms 3.5 Overload protection characteristics not shown 0.10110 100012345VDS / V VDS / VFig.4. Safe operating area. Tmb = 25 ˚C Fig.7. Typical on-state characteristics, Tj = 25 ˚C. ID & IDM = f(VDS); IDM single pulse; parameter tp ID = f(VDS); parameter VIS; tp = 250 µs January 1993 5 Rev 1.200
, RDS(ON) / Ohm BUK100-50GL a 0.20 Normalised RDS(ON) = f(Tj) VIS / V = 3.5 4 4.5 5 5.5 1.5 0.15 6 1.0 0.10 0.05 0.5000510 15 20 25 30 35 -60 -40 -20 0 20 40 60 80 100 120 140 ID / A Tj / C Fig.8. Typical on-state resistance, Tj = 25 ˚C. Fig.11. Normalised drain-source on-state resistance. RDS(ON) = f(ID); parameter VIS; tp = 250 µs a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 13 A; VIS = 5 V ID / A BUK100-50GL td sc / ms BUK100-50GL 40 100 20 PDSM 0 0.1024680.01 0.1 1 VIS / V PDS / kW Fig.9. Typical transfer characteristics, Tj = 25 ˚C. Fig.12. Typical overload protection characteristics. ID = f(VIS) ; conditions: VDS = 10 V; tp = 250 µs td sc = f(PDS); conditions: VIS ≥ 4 V; Tj = 25 ˚C. gfs / S BUK100-50GL PDSM% 11 120 9 100 4 40 2 2000010 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 ID / A Tmb / C Fig.10. Typical transconductance, Tj = 25 ˚C. Fig.13. Normalised limiting overload dissipation. gfs = f(ID); conditions: VDS = 10 V; tp = 250 µs PDSM% =100⋅PDSM/PDSM(25 ˚C) = f(Tmb) January 1993 6 Rev 1.200, Energy & Time BUK100-50GL IIS / uA BUK100-50GL 1 500 Time / ms 0.5 25 C Energy / J Tj(TO) 150C00-60 -20 20 60 100 140 180 2200246810 Tmb / C VIS / V Fig.14. Typical overload protection characteristics. Fig.17. Typical DC input characteristics. Conditions: VDD = 13 V; VIS = 5 V; SC load = 30 mΩ IIS = f(VIS); normal operation, parameter: Tj ID / A BUK100-50GL IISL / mA BUK100-50GL 20 3 PROTECTION LATCHED typ.RESET
5 NORMAL0050 60 7002468VDS / V VIS / V Fig.15. Typical clamping characteristics, 25 ˚C. Fig.18. Typical DC input characteristics, Tj = 25 ˚C. ID = f(VDS); conditions: VIS = 0 V; tp ≤ 50 µs IISL = f(VIS); overload protection operated ⇒ ID = 0 A VIS(TO) / V IS / A BUK100-50GL max. 2 50 typ. 40 min. 0 0 -60 -40 -20 0 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Tj / C VSD / V Fig.16. Input threshold voltage. Fig.19. Typical reverse diode current, Tj = 25 ˚C. VIS(TO) = f(Tj); conditions: ID = 1 mA; VDS = 5 V IS = f(VSDS); conditions: VIS = 0 V; tp = 250 µs January 1993 7 Rev 1.200, VDD VDD = VCL RL LDtp: adjust for correct IDDDTOPFET TOPFETIIPD.U.T. P D.U.T. RIRIVIS S VIS S ID measure ID measure 0V 0V 0R1 0R1Fig.20. Test circuit for resistive load switching times. Fig.23. Test circuit for inductive load switching times.
RESISTIVE TURN-ON BUK100-50GL INDUCTIVE TURN-ON BUK100-50GL VDS / V VDS / V 10 10 td on td on tr tr VIS / V VIS / V55ID / A ID / A 90% 90% 10% 10% 10% 10% 00010 20 0 10 20 time / us time / usFig.21. Typical switching waveforms, resistive load. Fig.24. Typical switching waveforms, inductive load. VDD = 13 V; RL = 4 Ω; RI = 50 Ω, Tj = 25 ˚C. VDD = 13 V; ID = 3 A; RI = 50 Ω, Tj = 25 ˚C.
RESISTIVE TURN-OFF BUK100-50GL INDUCTIVE TURN-OFF BUK100-50GL VDS / V 10 td off VDS / V tf td off tf VIS / V VIS / V 5 90% 5 90% ID / A 90% 90% ID / A 10% 10% 00010 20 0 10 20 time / us time / usFig.22. Typical switching waveforms, resistive load. Fig.25. Typical switching waveforms, inductive load. VDD = 13 V; RL = 4 Ω; RI = 50 Ω, Tj = 25 ˚C. VDD = 13 V; ID = 3 A; RI = 50 Ω, Tj = 25 ˚C. January 1993 8 Rev 1.200
, EDSM% Iiso normalised to 25 C 100 1.5 50100.5 0 20 40 60 80 100 120 140 -60 -20 20 60 100 140 180 Tmb / C Tj / CFig.26. Normalised limiting clamping energy. Fig.29. Normalised input current (normal operation). EDSM% = f(Tmb); conditions: ID = 15 A; VIS = 5 V IIS/IIS25 ˚C = f(Tj); VIS = 5 V
V(CL)DSS Iisl normalised to 25 CVDS
VDD VDD 0 + 1.5 ID LVDS
0 - VIS D TOPFET -ID/10010D.U.T.IP
Schottky R 01 RIS S shunt 0.5 -60 -20 20 60 100 140 180Ω Tj / CFig.27. Clamping energy test circuit, RIS = 50 .
E = 0.5 ⋅ LI2 ⋅ V /(V − V ) Fig.30. Normalised input current (protection latched).DSM D (CL)DSS (CL)DSS DD IISL/IISL25 ˚C = f(Tj); VIS = 5 V Idss 1 mA 100 uA 10 uA typ. 1 uA 100 nA 0 20 40 60 80 100 120 140 Tj / CFig.28. Typical off-state leakage current. IDSS = f(Tj); Conditions: VDS = 40 V; IIS = 0 V. January 1993 9 Rev 1.200
, MECHANICAL DATA Dimensions in mm 4,5 Net Mass: 2 g max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max123(2x) 0,9 max (3x) 0,6 2,54 2,54 2,4 Fig.31. TO220AB; pin 2 connected to mounting base. Notes 1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". January 1993 10 Rev 1.200,DEFINITIONS
Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 1993 11 Rev 1.200]15
Similar documents

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 BYD33 series Fast soft-recovery controlled avalanche rectifiers Product specification 1996 Jun 05 Supersedes data of October 1994 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION and fatigue free as coefficients of expansion o

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D121 BYD17 series Controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES • Glass passivated • High maximum operating temperature handbook, 4 columnska

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 BYD13 series Controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES • Glass passivated • High maximum operating temperature handbook, 4 columnska• L

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D122 BYD11 series Controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES • Glass passivated • High maximum operating temperature ahandbook, full pagewidt

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D117 BY8400 series Fast high-voltage soft-recovery rectifiers Product specification 1996 May 24 Supersedes data of June 1994 File under Discrete Semiconductors, SC01 Fast high-voltage soft-recovery BY8400 series rectifiers FEATURES • Glass pas

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D117 BY8100 series Very fast high-voltage soft-recovery controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of October 1994 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION expansion of all used parts

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D117 BY8000 series Fast high-voltage soft-recovery controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of June 1994 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION expansion of all used parts are mat

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D189 BY584 High-voltage soft-recovery rectifier Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION expansion of all used parts are matched. • Glass passivated Rugged gla

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BY527 Controlled avalanche rectifier Product specification 1996 Jun 11 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • G

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D189 BY505 High-voltage soft-recovery rectifier Product specification 1996 May 28 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION expansion of all used parts are matched. • Glass passivated Rugged gla

GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT rectifier diode in a full pack plastic envelope, featuring fast forward VRRM Repetitive peak reverse voltage 1500 V recovery and low forward recovery VF Forward voltage 1.2 V voltage. The device is i

GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT rectifier diode in a plastic envelope, featuring fast forward recovery and VRRM Repetitive peak reverse voltage 1500 V low forward recovery voltage. The VF Forward voltage 1.2 V device is intended fo

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BY448 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Ru

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY428 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Ru

GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT rectifier diode in a full pack plastic envelope featuring low forward VRRM Repetitive peak reverse voltage 1500 V voltage drop, fast reverse recovery VF Forward voltage 1.5 V and soft recovery charac

GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT rectifier diode in a full pack plastic envelope featuring low forward VRRM Repetitive peak reverse voltage 1500 V voltage drop, fast reverse recovery VF Forward voltage 1.5 V and soft recovery charac

GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. MAX. MAX. UNIT rectifier diodes in a plastic envelope featuring low forward voltage drop, BY329 -800 -1000 -1200 fast reverse recovery and soft VRRM Repetitive peak reverse 800 1000 1200 V recovery charac

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY328 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Ru

GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. MAX. UNIT rectifier diodes in a plastic envelope. The devices are intended for low BY249 -300 -600 frequency power rectifier VRRM Repetitive peak reverse voltage 300 600 V applications. IF(AV) Average for

GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT rectifier diodes in a plastic full pack envelope featuring low forward BY229F -200 -400 -600 -800 voltage drop, fast reverse recovery VRRM Repetitive peak reverse 200 400 600 800 V and

GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT rectifier diodes in a plastic envelope featuring low forward voltage drop, BY229 -200 -400 -600 -800 fast reverse recovery and soft VRRM Repetitive peak reverse 200 400 600 800 V recov

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY228 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Ru

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin3GDSType VDS ID RDS(on) Package Ordering Code BUZ 91 A 600V8A0.9 Ω TO-220 AB C67078-S1342-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 33 °C 8 Pulsed drain current IDpuls T