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BUH515D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ STMicroelectronics PREFERRED SALESTYPE ■ HIGH VOLTAGE CAPABILITY ■ U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) ■ NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE APPLICATIONS: 3 ■ HORIZONTAL DEFLECTION FOR COLOUR 1 TV DESCRIPTION ISOWATT218 The BUH515D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. INTERNAL SCHEMATIC...
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BUH515D

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

■ STMicroelectronics PREFERRED

SALESTYPE

■ HIGH VOLTAGE CAPABILITY ■ U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) ■ NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE APPLICATIONS: 3 ■ HORIZONTAL DEFLECTION FOR COLOUR 1

TV

DESCRIPTION ISOWATT218 The BUH515D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. INTERNAL SCHEMATIC DIAGRAM R Typ. = 12 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 1500 V VCEO Collector-Emit ter Voltage (IB = 0) 700 V VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current8AICM Collector Peak Current (tp < 5 ms) 15 A IB Base Current5AIBM Base Peak Current (tp < 5 ms) 8APTotal Dissipation at T = 25 ototcC50 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operat ing Junction Temperature 150 oC November 1999 1/7,

THERMAL DATA

Rthj-ca se Thermal Resistance Junction-case Max 2.5 oC/W

ELECTRICAL CHARACTERISTICS (T ocase = 25 C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-of f VCE = 1300 V 10 µA Current (VBE = 0) VCE = 1500 V 0.2 mA VCE = 1500VT= 125ojC2mA IEBO Emitter Cut-of f Current VEB = 5 V 200 mA (IC = 0) VCE(sat )∗ Collector-Emit ter IC = 5 A IB = 1.25 A 1.5 V Saturation Voltage VBE(s at)∗ Base-Emitter IC = 5 A IB = 1.25 A 1.3 V Saturation Voltage hF E∗ DC Current Gain IC = 5 A VCE = 5V510 IC = 5 A VCE = 5VT= 100ojC3RESISTIVE LOAD VCC = 400 V IC = 5 A ts Storage Time IB1 = 1.5 A IB2= -2.5 A 2.4 3.6 µs tf Fall Time 170 260 ns INDUCTIVE LOAD IC = 5Af= 15625 Hz ts Storage Time IB1 = 1.25 A IB2 = -2.5 A 3.5 µs tf Fall Time π 450 ns Vc eflybac k = 1050 sin 106tV10 VF Diode Forward Voltage IF = 5A2V∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area Thermal Impedance

2/7, Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Power Losses at 16 KHz Switching Time InductiveLoad at 16KHz (see figure 2) 3/7, Switching Time Resistive Load BASE DRIVE INFORMATION In order to saturate the power switch and reduce Inductance L1 serves to control the slope of the conduction losses, adequate direct base current negative base current IB2 to recombine the IB1 has to be provided for the lowest gain hFE at excess carrier in the collector when base current 100 oC (line scan phase). On the other hand, is still present, this avoid any tailing phenomenon negative base current IB2 must be provided to in the collector current. turn off the power transistor (retrace phase). Most The values of L and C are calculated from the of the dissipation, especially in the deflection following equations: application, occurs at switch-off. Therefore it is1212essential to determine the value of IB2 which L (I2 C) = C (V2 CEfly) minimizes power losses, fall time tf and, 1 consequently, Tj. A new set of curves have been ω = 2 πf = defined to give total power losses, ts and tf as a √LC function of IB2 at 16 KHz frequencies for Where IC= operating collector current, VCEfly= choosing the optimum negative drive. The test flyback voltage, f= frequency of oscillation during circuit is illustrated in fig. 1. retrace. 4/7, Figure 1: Inductive Load Switching Test Circuit Figure 2: Switching Waveforms in a Deflection Circuit 5/7,

ISOWATT218 MECHANICAL DATA

DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 5.35 5.65 0.211 0.222 C 3.30 3.80 0.130 0.150 D 2.90 3.10 0.114 0.122 D1 1.88 2.08 0.074 0.082 E 0.75 0.95 0.030 0.037 F 1.05 1.25 0.041 0.049 F2 1.50 1.70 0.059 0.067 F3 1.90 2.10 0.075 0.083 G 10.80 11.20 0.425 0.441 H 15.80 16.20 0.622 0.638L90.354 L1 20.80 21.20 0.819 0.835 L2 19.10 19.90 0.752 0.783 L3 22.80 23.60 0.898 0.929 L4 40.50 42.50 1.594 1.673 L5 4.85 5.25 0.191 0.207 L6 20.25 20.75 0.797 0.817 N 2.1 2.3 0.083 0.091 R 4.6 0.181 DIA 3.5 3.7 0.138 0.146 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm P025C/A 6/7, Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 7/7]
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