Download: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUH515 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ HIGH VOLTAGE CAPABILITY ■ U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)). APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS ■ SWITCH MODE POWER SUPPLIES 3 DESCRIPTION ISOWATT218 The BUH515 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val...
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BUH515

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

■ HIGH VOLTAGE CAPABILITY ■ U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)). APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS ■ SWITCH MODE POWER SUPPLIES 3 DESCRIPTION ISOWATT218 The BUH515 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 1500 V VCEO Collector-Emit ter Voltage (IB = 0) 700 V VEBO Emitter-Base Voltage (IC = 0) 10 V IC Collector Current8AICM Collector Peak Current (tp < 5 ms) 12 A IB Base Current5AIBM Base Peak Current (tp < 5 ms) 8 A Ptot Total Dissipation at Tc = 25 oC 50 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operat ing Junction Temperature 150 oC November 1999 1/7,

THERMAL DATA

Rthj-ca se Thermal Resistance Junction-case Max 2.5 oC/W

ELECTRICAL CHARACTERISTICS (T ocase = 25 C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-of f VCE = 1500 V 0.2 mA Current (VBE = 0) VCE = 1500 V Tj = 125 oC 2 mA IEBO Emitter Cut-of f Current VEB = 5 V 100 µA (IC = 0) VCEO(sus )∗ Collector-Emit ter IC = 100 mA 700 V Sustaining Voltage (IB = 0) VEBO Emitter-Base Voltage IE = 10 mA 10 V (IC = 0) VCE(sat )∗ Collector-Emit ter IC = 5 A IB = 1.25 A 1.5 V Saturation Voltage VBE(s at)∗ Base-Emitter IC = 5 A IB = 1.25 A 1.3 V Saturation Voltage hF E∗ DC Current Gain IC = 5 A VCE = 5V612 IC = 5 A VCE = 5 V Tj = 100 oC 4 RESISTIVE LOAD VCC = 400 V IC = 5 A ts Storage Time IB1 = 1.25 A IB2 = 2.5 A 2.7 3.9 µs tf Fall Time 190 280 ns INDUCTIVE LOAD IC = 5Af= 15625 Hz ts Storage Time IB1 = 1.25 A IB2 = -1.5 A 2.3 µs tf Fall Time π 350 ns Vc eflybac k = 1050 sin 106tV5INDUCTIVE LOAD IC = 5A f = 31250 Hz ts Storage Time IB1 = 1.25 A IB2 = -1.5 A 2.3 µs tf Fall TimeπV= 1200 sin 106 200 ns c eflybacktV5∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area Thermal Impedance

2/7, Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Power Losses at 16 KHz Switching Time InductiveLoad at 16KHz (see figure 2) 3/7, Power Losses at 32 KHz Switching Time InductiveLoad at 32 KHz (see figure 2) Reverse Biased SOA Switching Time Resistive Load BASE DRIVE INFORMATION In order to saturate the power switch and reduce figure 1. conduction losses, adequate direct base current Inductance L1 serves to control the slope of the IB1 has to be provided for the lowest gain hFE at negative base current IB2 to recombine the 100 oC (line scan phase). On the other hand, excess carrier in the collector when base current negative base current IB2 must be provided to is still present, this would avoid any tailing turn off the power transistor (retrace phase). phenomenon in the collector current. Most of the dissipation, in the deflection The values of L and C are calculated from the application, occurs at switch-off. Therefore it is following equations: essential to determine the value of IB2 which12121minimizes power losses, fall time tf and, L (I ) = C (V ) ω = 2 πf =2C2CEfly √LC consequently, Tj. A new set of curves have been defined to give total power losses, t and t as a Where IC= operating collector current, VCEfly=s f function of IB2 at both 16 KHz and 32 KHz flyback voltage, f= frequency of oscillation during scanning frequencies for choosing the optimum retrace. negative drive. The test circuit is illustrated in 4/7, Figure 1: Inductive Load Switching Test Circuits. Figure 2: Switching Waveforms in a Deflection Circuit 5/7,

ISOWATT218 MECHANICAL DATA

DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 5.35 5.65 0.211 0.222 C 3.30 3.80 0.130 0.150 D 2.90 3.10 0.114 0.122 D1 1.88 2.08 0.074 0.082 E 0.75 0.95 0.030 0.037 F 1.05 1.25 0.041 0.049 F2 1.50 1.70 0.059 0.067 F3 1.90 2.10 0.075 0.083 G 10.80 11.20 0.425 0.441 H 15.80 16.20 0.622 0.638L90.354 L1 20.80 21.20 0.819 0.835 L2 19.10 19.90 0.752 0.783 L3 22.80 23.60 0.898 0.929 L4 40.50 42.50 1.594 1.673 L5 4.85 5.25 0.191 0.207 L6 20.25 20.75 0.797 0.817 N 2.1 2.3 0.083 0.091 R 4.6 0.181 DIA 3.5 3.7 0.138 0.146 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm P025C/A 6/7, Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 7/7]
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