Download: DISCRETE SEMICONDUCTORS DATA SHEET BYD33 series Fast soft-recovery controlled avalanche rectifiers Product specification 1996 Jun 05 Supersedes data of October 1994

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 BYD33 series Fast soft-recovery controlled avalanche rectifiers Product specification 1996 Jun 05 Supersedes data of October 1994 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION and fatigue free as coefficients of expansion of all used parts are • Glass passivated Cavity free cylindrical glass package (1) matched. • High maximum operating through Implotec technology. temperature This package is hermetically sealed (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Guaranteed avalanche ...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage M3D119

BYD33 series Fast soft-recovery

controlled avalanche rectifiers Product specification 1996 Jun 05 Supersedes data of October 1994 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION and fatigue free as coefficients of expansion of all used parts are • Glass passivated Cavity free cylindrical glass package (1) matched. • High maximum operating through Implotec technology. temperature This package is hermetically sealed (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Guaranteed avalanche energykaabsorption capability handbook, 4 columns • Available in ammo-pack. MAM123 Fig.1 Simplified outline (SOD81) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYD33D − 200 V BYD33G − 400 V BYD33J − 600 V BYD33K − 800 V BYD33M − 1000 V BYD33U − 1200 V BYD33V − 1400 V VR continuous reverse voltage BYD33D − 200 V BYD33G − 400 V BYD33J − 600 V BYD33K − 800 V BYD33M − 1000 V BYD33U − 1200 V BYD33V − 1400 V IF(AV) average forward current Ttp = 55 °C; lead length = 10 mm; BYD33D to M see Figs 2 and 3; − 1.30 A averaged over any 20 ms period; BYD33U and V − 1.26 A see also Figs 10 and 11 IF(AV) average forward current Tamb = 65 °C; PCB mounting (see BYD33D to M Fig.19); see Figs 4 and 5; − 0.70 A averaged over any 20 ms period; BYD33U and V − 0.67 A see also Figs 10 and 11 IFRM repetitive peak forward current Ttp = 55 °C; see Figs 6 and 7 BYD33D to M − 12 A BYD33U and V − 11 A 1996 Jun 05 2, SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IFRM repetitive peak forward current Tamb = 65 °C; see Figs 8 and 9 BYD33D to M − 7 A BYD33U and V − 6 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; − 20 A Tj = Tj max prior to surge; VR = VRRMmax ERSM non-repetitive peak reverse L = 120 mH; Tj = Tj max prior to avalanche energy surge; inductive load switched off BYD33D to J − 10 mJ BYD33K to V − 7 mJ Tstg storage temperature −65 +175 °C Tj junction temperature see Figs 12 and 13 −65 +175 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 1 A; Tj = Tj max; − − 1.1 V see Figs 14 and 15 IF = 1 A; − − 1.3 V see Figs 14 and 15 V(BR)R reverse avalanche breakdown IR = 0.1 mA voltage BYD33D 300 − − V BYD33G 500 − − V BYD33J 700 − − V BYD33K 900 − − V BYD33M 1100 − − V BYD33U 1300 − − V BYD33V 1500 − − V IR reverse current VR = VRRMmax; − − 1 µA see Fig.16 VR = VRRMmax; − − 100 µA Tj = 165 °C; see Fig.16 trr reverse recovery time when switched from BYD33D to J IF = 0.5 A to IR = 1 A; − − 250 ns measured at IR = 0.25 ABYD33K and M − − 300 ns see Fig.21 BYD33U and V − − 500 ns Cd diode capacitance f = 1 MHz; VR = 0 V; − 20 − pF see Figs 17 and 18 1996 Jun 05 3, SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dI maximum slope of reverse recovery when switched from -R- dt current IF = 1 A to VR ≥ 30 V BYD33D to J and dIF/dt = −1 A/µs; − − 6 A/µs see Fig.20 BYD33K to V − − 5 A/µs THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 60 K/W Rth j-a thermal resistance from junction to ambient note 1 120 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.19. For more information please refer to the ‘General Part of Handbook SC01’. 1996 Jun 05 4, GRAPHICAL DATA MGA857 MLB905 1.6 1.6 handbook, halfpage handbook, halfpage I F(AV) I F(AV) (A) lead length 10 mm (A) lead length 10 mm 1.2 1.2 0.8 0.8 0.4 0.4000100 T ( o C) 200 0 100 T ( o C) 200tp tp BYD33D to M BYD33U andVa= 1.42; VR = VRRMmax; δ = 0.5. a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. Switched mode application. Fig.2 Maximum permissible average forward Fig.3 Maximum permissible average forward current as a function of tie-point temperature current as a function of tie-point temperature (including losses due to reverse leakage). (including losses due to reverse leakage). MLB902 1.2 MLB9061.2 handbook, halfpage handbook, halfpage I F(AV) IF(AV) (A) (A) 0.8 0.8 0.4 0.4000100 200Tamb( o C) 0 100 200Tamb( o C) BYD33D to M BYD33U andVa= 1.42; VR = VRRMmax; δ = 0.5. a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.19. Device mounted as shown in Fig.19. Switched mode application. Switched mode application. Fig.4 Maximum permissible average forward Fig.5 Maximum permissible average forward current as a function of ambient temperature current as a function of ambient temperature (including losses due to reverse leakage). (including losses due to reverse leakage). 1996 Jun 05 5, MGA859 handbook, full pagewidth I FRM (A) δ = 0.05 0.1 0.2 0.5 10 2 101110 102 103 4t p (ms) 10 BYD33D to M Ttp = 55 °C; Rth j-tp = 60 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MLB909 handbook, full pagewidth I FRM (A) δ = 0.05 0.1 0.2 0.5 10 2 101110 102 103 4t p (ms) 10 BYD33U and V Ttp = 55°C; Rth j-tp = 60 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V. Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Jun 05 6, MGA860 handbook, full pagewidth I FRM (A) δ = 0.05 0.1 0.2 0.5 10 2 101110 102 103 4t p (ms) 10 BYD33D to M Tamb = 65 °C; Rth j-a = 120 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MLB910 handbook, full pagewidth I FRM (A) δ = 0.05 0.1 0.2 0.5 10 2 101110 102 103 4t p (ms) 10 BYD33U and V Tamb = 65 °C; Rth j-a = 120 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V. Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Jun 05 7, MGA869 MLB904 2.4 2.4 handbook, halfpage handbook, halfpagePa= 3 2.5 2 1.57Pa= 3 2.5 2 1.57 (W) 1.42 (W) 1.42 1.6 1.6 0.8 0.80000.8 1.6 0 0.8 1.6IF( A V ) (A) I F ( A V ) (A) BYD33D to M BYD33U andVa= IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.10 Maximum steady state power dissipation Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, (forward plus leakage current losses, excluding switching losses) as a function excluding switching losses) as a function of average forward current. of average forward current. MGA861 MLB907 200 200 handbook, halfpage handbook, halfpage Tj Tj ( o C) ( o C) 100 100DGJKMUV000400 800 1200 0 1000 2000 VR (V) VR (V) BYD33D to M BYD33U and V Solid line = VR. Solid line = VR. Dotted line = VRRM; δ = 0.5. Dotted line = VRRM; δ = 0.5. Fig.12 Maximum permissible junction temperature Fig.13 Maximum permissible junction temperature as a function of reverse voltage. as a function of reverse voltage. 1996 Jun 05 8, MGA869 MLB904 2.4 2.4 handbook, halfpage handbook, halfpagePa= 3 2.5 2 1.57Pa= 3 2.5 2 1.57 (W) 1.42 (W) 1.42 1.6 1.6 0.8 0.80000.8 1.6 0 0.8 1.6IF( A V ) (A) I F ( A V ) (A) BYD33D to M BYD33U and V Solid line: Tj = 25 °C. Solid line: Tj = 25 °C. Dotted line: Tj = 175 °C. Dotted line: Tj = 175 °C. Fig.14 Forward current as a function of forward Fig.15 Forward current as a function of forward voltage; maximum values. voltage; maximum values. MGA853 MGA86232handbook1, 0halfpage 10handbook, halfpage

IR

( µ A) Cd (pF) D, G, J 10 K, M110100 T ( o C) 200 1 10 1023jVR(V) BYD33D to M VR = VRRMmax. f = 1 MHz; Tj = 25 °C. Fig.16 Reverse current as a function of junction Fig.17 Diode capacitance as a function of reverse temperature; maximum values. voltage; typical values. 1996 Jun 05 9, MLB908 handbook1, 0halfpage 50 handbook, halfpage Cd (pF) 1 10 102 3V R (V) 10 MGA200 BYD33U andVf= 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.18 Diode capacitance as a function of reverse voltage; typical values. Fig.19 Device mounted on a printed-circuit board. handboIoFk, halfpage dIF dt trr 10% t dIR dt 100% IR MGC499 Fig.20 Reverse recovery definitions. 1996 Jun 05 10, handbook, full pagewidth IDUT F (A) + 0.5 t 10 Ω 25 V rr1Ω50Ω0t0.25 0.5

IR

(A) 1 MAM057 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.21 Test circuit and reverse recovery time waveform and definition. 1996 Jun 05 11, PACKAGE OUTLINE 5 max handbook, full pagewidth 0.81 max 2.15 28 min 3.8 max 28 min MBC051max Dimensions in mm. The marking band indicates the cathode. Fig.22 SOD81.

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jun 05 12]
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