Download: DISCRETE SEMICONDUCTORS DATA SHEET BYD31 series Fast soft-recovery controlled avalanche rectifiers Product specification 1996 Jun 05 Supersedes data of December 1991

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D122 BYD31 series Fast soft-recovery controlled avalanche rectifiers Product specification 1996 Jun 05 Supersedes data of December 1991 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION and fatigue free as coefficients of expansion of all used parts are • Glass passivated Cavity free cylindrical glass package (1) matched. • High maximum operating through Implotec technology. temperature This package is hermetically sealed (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Guaranteed avalanche...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage M3D122

BYD31 series Fast soft-recovery

controlled avalanche rectifiers Product specification 1996 Jun 05 Supersedes data of December 1991 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION and fatigue free as coefficients of expansion of all used parts are • Glass passivated Cavity free cylindrical glass package (1) matched. • High maximum operating through Implotec technology. temperature This package is hermetically sealed (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capabilityhandbook, full pagewidthka• Available in ammo-pack. MAM196 Fig.1 Simplified outline (SOD91) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYD31D − 200 V BYD31G − 400 V BYD31J − 600 V BYD31K − 800 V BYD31M − 1000 V VR continuous reverse voltage BYD31D − 200 V BYD31G − 400 V BYD31J − 600 V BYD31K − 800 V BYD31M − 1000 V IF(AV) average forward current Ttp = 55 °C; lead length = 10 mm; − 440 mA see Fig.2; averaged over any 20 ms period; see also Fig.6 Tamb = 60 °C; PCB mounting (see − 320 mA Fig.11); see Fig.3; averaged over any 20 ms period; see also Fig.6 IFRM repetitive peak forward current Ttp = 55 °C; see Fig.4 − 4 A Tamb = 60 °C; see Fig.5 − 3 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; − 5 A Tj = Tj max prior to surge; VR = VRRMmax 1996 Jun 05 2, SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT PRSM non-repetitive peak reverse power t = 20 µs half sine wave; Tj = Tj max dissipation prior to surge BYD31D to J − 100 W BYD31K and M − 50 W Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.7 −65 +175 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 0.5 A; Tj = Tj max; − − 1.15 V see Fig.8 IF = 0.5 A; − − 1.35 V see Fig.8 V(BR)R reverse avalanche breakdown IR = 0.1 mA voltage BYD31D 300 − − V BYD31G 500 − − V BYD31J 700 − − V BYD31K 900 − − V BYD31M 1100 − − V IR reverse current VR = VRRMmax; − − 1 µA see Fig.9 VR = VRRMmax; − − 75 µA Tj = 165 °C; see Fig.9 trr reverse recovery time when switched from BYD31D to J IF = 0.5 A to IR = 1 A; − − 250 ns measured at I = 0.25A BYD31K andMR− − 300 ns see Fig.12 Cd diode capacitance f = 1 MHz; VR = 0 V; BYD31D to J see Fig.10 − 9 − pF BYD31K and M − 8 − pF dI maximum slope of reverse recovery when switched from -R- dt current IF = 1 A to VR ≥ 30 V BYD31D to J and dIF/dt = −1 A/µs; − − 6 A/µs see Fig.13 BYD31K and M − − 5 A/µs 1996 Jun 05 3, THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 180 K/W Rth j-a thermal resistance from junction to ambient note 1 250 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11. For more information please refer to the ‘General Part of Handbook SC01’. 1996 Jun 05 4, GRAPHICAL DATA MGC517 MGC518 0.6 handbook0, .h6alfpage handbook, halfpage I IF(AV) F(AV) (A) (A) lead length 10 mm 0.4 0.4 0.2 0.2000100 200 0 100 200 Ttp ( o C) T oamb ( C) a = 1.42; VR = VRRMmax; δ = 0.5. a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.11. Switched mode application. Switched mode application. Fig.2 Maximum permissible average forward Fig.3 Maximum permissible average forward current as a function of tie-point temperature current as a function of ambient temperature (including losses due to reverse leakage). (including losses due to reverse leakage). MCD580 5.0 handbook, full pagewidth I FRM (A) δ = 0.05 0.1 2.5 0.2 0.5 10 −2 10 −1 10 0 10 1 10 2 10 3 10 4 tp (ms) Ttp = 55 °C; Rth j-tp = 180 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Jun 05 5, MCD586 handbook, full pagewidth I FRM (A) δ = 0.05 2 0.1 0.2 0.5 10 −2 10 −1 10 0 10 1 10 2 10 3 10 4 tp (ms) Tamb = 60 °C; Rth j-a = 250 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MCD584 MCD583 1.0 200 handbook, halfpage a = 3 handbook, halfpage 2.5

T

P j (W) ( o C) a = 1.57 0.5 100 1.42DGJKM0000.25 0.50 0 500 1000 I F(AV) (A) VR (V) a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Solid line = VR. Fig.6 Maximum steady state power dissipation Dotted line = VRRM; δ = 0.5. (forward plus leakage current losses, excluding switching losses) as a function Fig.7 Maximum permissible junction temperature of average forward current. as a function of reverse voltage. 1996 Jun 05 6, MCD585 3 MCD5823 10 handbook, halfpage handbook, halfpage I IF R (A) (µA) 2 102110010123V(V) 0 100 200F T (oj C) Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. VR = VRRMmax. Fig.8 Forward current as a function of forward Fig.9 Reverse current as a function of junction voltage; maximum values. temperature; maximum values. MGC516 handbook,1 h0alfpage 50 handbook, halfpage Cd 25 (pF) 1 10 10 2 103 VR (V) MGA200 f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.10 Diode capacitance as a function of reverse voltage; typical values. Fig.11 Device mounted on a printed-circuit board. 1996 Jun 05 7, handbook, full pagewidth IDUT F (A) + 0.5 10 Ω 25Vtrr1Ω50Ω0t0.25 0.5

IR

(A) 1 MAM057 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.12 Test circuit and reverse recovery time waveform and definition. handboIoFk, halfpage dIF dt trr 10% t dIR dt 100% IR MGC499 Fig.13 Reverse recovery definitions. 1996 Jun 05 8, PACKAGE OUTLINE 3.5 max handbook, full pagewidth 0.55 max 1.7 max 29 min 3.0 max 29 min MBC053 Dimensions in mm. The marking band indicates the cathode. Fig.14 SOD91.

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jun 05 9]
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