Download: DISCRETE SEMICONDUCTORS DATA SHEET BYD17 series Controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of November 1993 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D121 BYD17 series Controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES • Glass passivated • High maximum operating temperature handbook, 4 columnska• Low leakage current • Excellent stability MAM061 • Guaranteed avalanche energy absorption capability • Shipped in 8 mm embossed tape • Smallest surface mount rectifier Fig.1 Simplified outline (SOD87) and symbol. outline. DESCRIPTION MARKING Cavity free cylindrical glass package through Implotec(1...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage M3D121

BYD17 series Controlled avalanche rectifiers

Product specification 1996 May 24 Supersedes data of November 1993 File under Discrete Semiconductors, SC01,

FEATURES

• Glass passivated • High maximum operating temperature handbook, 4 columnska• Low leakage current • Excellent stability MAM061 • Guaranteed avalanche energy absorption capability • Shipped in 8 mm embossed tape • Smallest surface mount rectifier Fig.1 Simplified outline (SOD87) and symbol. outline. DESCRIPTION MARKING Cavity free cylindrical glass package through Implotec(1) technology. TYPE NUMBER MARKING CODE BYD17D 17D PH This package is hermetically sealed and fatigue free as coefficients of BYD17G 17G PH expansion of all used parts are BYD17J 17J PH matched. BYD17K 17K PH (1) Implotec is a trademark of Philips. BYD17M 17M PH LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYD17D − 200 V BYD17G − 400 V BYD17J − 600 V BYD17K − 800 V BYD17M − 1000 V VRWM crest working reverse voltage BYD17D − 200 V BYD17G − 400 V BYD17J − 600 V BYD17K − 800 V BYD17M − 1000 V VR continuous reverse voltage BYD17D − 200 V BYD17G − 400 V BYD17J − 600 V BYD17K − 800 V BYD17M − 1000 V 1996 May 24 2, SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF(AV) average forward current Ttp = 105 °C; − 1.5 A averaged over any 20 ms period; see Figs 2 and 4 Tamb = 65 °C; PCB mounting (see − 0.6 A Fig.9); averaged over any 20 ms period; see Figs 3 and 4 IFSM non-repetitive peak forward current t = 10 ms half sinewave; − 20 A Tj = Tj max prior to surge; VR = VRRMmax ERSM non-repetitive peak reverse avalanche L = 120 mH; Tj = Tj max prior to − 7 mJ energy surge; inductive load switched off Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.5 −65 +175 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 1 A; Tj = Tj max; see Fig.6 − − 0.93 V IF = 1 A; see Fig.6 − − 1.05 V V(BR)R reverse avalanche IR = 0.1 mA breakdown voltage BYD17D 225 − − V BYD17G 450 − − V BYD17J 650 − − V BYD17K 900 − − V BYD17M 1100 − − V IR reverse current VR = VRRMmax; see Fig.7 − − 1 µA VR = VRRMmax; Tj = 165 °C; see Fig.7 − − 100 µA trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; − 3 − µs measured at IR = 0.25 A; see Fig.10 Cd diode capacitance VR = 0 V; f = 1 MHz; see Fig.8 − 21 − pF THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 30 K/W Rth j-a thermal resistance from junction to ambient note 1 150 K/W Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9. For more information please refer to the “General Part of Handbook SC01”. 1996 May 24 3, GRAPHICAL DATA MBH394 MBH392 3 1.0 handbook, halfpage handbook, halfpage IF(AV) IF(AV) (A) (A) 0.8 0.6 0.4 0.200040 80 120 160 200 0 40 80 120 160 200 Ttp (°C) Tamb (°C) a = 1.57; VR = VRRMmax; δ = 0.5. a = 1.57; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.9. Fig.2 Maximum permissible average forward Fig.3 Maximum permissible average forward current as a function of tie-point temperature current as a function of ambient temperature (including losses due to reverse leakage). (including losses due to reverse leakage). MBH395 MGC736 2.5 handbook, halfpage handboo2k,0 h0alfpage

P

(W) Tj a = 3 2.5 2 1.57 1.42 ( o2.0 C) 1.5 1.0DGJKM0.50000.4 0.8 1.2 1.6 0 400 800 1200 IF(AV) (A) VR, VRRM (V) a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Solid line = VR. Fig.4 Maximum steady state power dissipation Dotted line = VRRM; δ = 0.5. (forward plus leakage current losses, excluding switching losses) as a function Fig.5 Maximum permissible junction temperature of average forward current. as a function of reverse voltage. 1996 May 24 4, MBG048 MGC73963handbook, halfpage handboo1k,0 halfpage IF IR (A) (µA) 4 102 2 100101V(V) 2 0 40 80 120 160 200F Tj ( oC) Solid line: Tj = 25 °C. Dotted line: Tj = 175 °C. VR = VRRMmax. Fig.6 Forward current as a function of forward Fig.7 Reverse current as a function of junction voltage; maximum values. temperature; maximum values. MGC740 10 2handbook, halfpage handbook, full pagewidth Cd (pF) 4.5 2.5 1 10 102 103 1.25 MSB213 VR (V) f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.8 Diode capacitance as a function of reverse voltage; typical values. Fig.9 Printed-circuit board for surface mounting. 1996 May 24 5, handbook, full pagewidth IDUT F (A) + 0.5 t 10 Ω 25 V rr1Ω50Ω0t0.25 0.5

IR

(A) 1 MAM057 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.10 Test circuit and reverse recovery time waveform and definition. 1996 May 24 6, PACKAGE OUTLINE 3.5 0.2 handbook, full pagewidth 0.3 2.05OD= 0.05 MBA505 1.9 O D1 = 0.1 Dimensions in mm. Fig.11 SOD87.

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 24 7]
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