Download: Multi-layer ceramic chip capacitor networks MNA14 (1608 (0603) 4 size, chip capacitor networks)

Multi-layer ceramic chip capacitor

networks

MNA14 (1608 (0603) 4 size, chip capacitor networks)

!Features !External dimensions (Units : mm) 1) Area ratio is approximately 55% smaller than that of the MCH18, enabling high - density mounting. 2) Mounting costs are reduced. 3) Use of convex electrodes prevents solder bridging during mounting, and makes it easy to perform 0.55 ± 0.1 0.7 ± 0.2 a visual inspection of the mounted piece. Also facilitates automatic inspection. 4) Barrier layer and end terminations to improve solderability. 5) Each element is independent to ensure a wide range of circuit applications. 0.85 ± 0.1 0.8 ± 0.1 6) Can be packed on tape. 0.8 ± 0.1 3.2 ± 0.2 ∗ Land pattern in 0.8mm pitch between each electrode is recommended. !Structure !Equivalent circuits C1 C2 C3 C4 C1 = C2 = C3 = C4 External electrode III (coating layer) Internal electrode External electrode II (barrier layer) Ceramic element External electrode I (thick membrane layer) 0.15+ 0.09– 0.12 1.6 ± 0.2, !Product designation Code Product thickness Packaging specifications Reel Basic ordening unit (pcs.) K 0.8mm Paper tape (width 8 mm, pich 4 mm) φ180mm (7in.) 4,000 Reel (φ180mm) : EIAJ ETX-7001 Part No. Packaging style

MNA145A101KK

Rated voltage Capacitance-temperature characteristics Nominal Capacitance tolerance Code Voltage Code EIA code Operating temperature range (˚C) Temp. coefficient or percent change capacitance Code tolerace 2 25V A C0G -55 ~ + 125 0 ± 30ppm /˚C 3-digit designation K ± 10% 5 50V C X7R -55 ~ + 125 ± 15% according IEC M ± 20% !Capacitance range Product name MNA 14 Temperature characteristic A (C0G) C (X7R) Capacitance (pF) Rated voltage 50V 25V Tolerance K ( ± 10%) M ( ± 20%) 1,000 2,200 4,700 10,000 22,000 Product thickness (mm) 0.8 ± 0.1, !Characteristics Class 1 (For thermal compensation) Temperature characteristics Test methods / conditions A (C0G) Item (based on JIS C 5102) Operating temperature -55˚C~ + 125˚C Nominal capacitance (C) Must be within the specified tolerance range. Based on paragraph 7.8 and paragraph 9, Measured at room temperature and standard humidity. 100 / (400 + 20C)% or less: Less than 30 pF Dissipation factor (Tanδ) Measurement frequency : 1 ± 0.1MHz0.1% or less: 30 pF or larger Measurement voltage : 1 ± 0.1Vrms. Based on paragraph 7.6. Insulation resistance (IR) 10,000 MΩ or 500MΩ⋅µF, whichever is smaller Measurement is made after rated voltage is applied for 60 ± 5s. Based on paragraph 7.1. Withstanding voltage The insulation must not be damaged. Apply 300% of the rated voltage for 1 to 5s then measure. Temperature characteristics Within 0 ± 30ppm / ˚C The temperature coefficients in table 12, paragraph 7.12 are calculated at 20˚C and high temperature. Based on paragraph 8.11.2. Terminal adherence No detachment or signs of detachment. Apply 5N (0.51 kg · f) for 10 ± 1s Pressure (5N) in the direction Test board indicated by the arrow. Capacitor Appearance There must be no mechanical damage. Chip is mounted to a board in the manner Resistance shown on the right, subjected to vibration to vibration Rate of capacitance change Must be within initial tolerance. (type A in paragraph 8.2), and Dissipation factor (Tanδ) Must satisfy initial specified value. measured 24 ± 2 hours later. Board Based on paragraph 8.13, Solderability At least 3/4 of the surface of the two terminals Soldering temperature : 235 ± 5˚C must be covered with new solder. Soldering time : 2 ± 0.5s Rate of capacitance change ± 2.5% or ± 0.25 pF, whichever is larger Resistance Based on paragraph 8.14.Dissipation factor (Tanδ) Must satisfy initial specified value. to soldering Soldering temperature : 260 ± 5˚C heat Insulation resistance 10,000 MΩ or 500MΩ⋅µF, whichever is smaller Soldering time : 5 ± 0.5s Preheating : 150 ± 10˚C for 1 to 2 min. Withstanding voltage The insulation must not be damaged. Rate of capacitance change ± 2.5% or ± 0.25 pF, whichever is larger Based on paragraph 9.3,Temperature cycling Number of cycles: 10Dissipation factor (Tanδ) Must satisfy initial specified value. Capacitance measured after 24 ± 2 hrs. Insulation resistance 10,000 MΩ or 500MΩ⋅µF, whichever is smaller Appearance There must be no mechanical damage. Based on paragraph 9.9, Test temperature : 40 ± 2˚C Rate of capacitance change ± 7.5% or ± 0.75 pF, whichever is larger Humidity load Relative humidity : 90% to 95% test Dissipation factor (Tanδ) 0.5% or less Applied voltage : rated voltage Test time : 500 to 524 hrs. Insulation resistance 500 MΩ or 25MΩ⋅µF, whichever is smaller Capacitance measured after 24 ± 2 hrs. Appearance There must be no mechanical damage. Based on paragraph 9.10, High- Rate of capacitance change ± 3.0% or ± 0.3 pF, whichever is larger Test temperature : Max. operating temp. temperature Applied voltage : rated voltage x 200% load test Dissipation factor (Tanδ) 0.3% or less Test time : 1,000 to 1,048 hrs. Insulation resistance 10,000 MΩ or 50MΩ⋅µF, whichever is smaller Capacitance measured after 24 ± 2 hrs., Class 2 (High dielectric constant) Temperature characteristics Test methods/conditions C (X7R) (based on JIS C 5102) Item Operating temperature -55˚C ~ + 125˚C Nominal capacitance (C) Must be within the specified tolerance range. Based on paragraph 7.8 Measured at room temperature and standard humidity. 2.5% or less Measurement frequency: 1 ± 0.1 kHz Dissipation factor (Tanδ) (when rated voltage is 16V: 3.5% or less) Measurement voltage : 0.1 ± 0.2 Vrms. Based on paragraph 7.6 Insulation resistance (IR) 10,000 MΩ or 500MΩ⋅µF, whichever is smaller Measurement is made after rated voltage is applied for 60 ± 5s. Based on paragraph 7.1 Withstanding voltage The insulation must not be damaged. Apply 250% of the rated voltage for 1 to 5s then measure. The temperature coefficients in paragraph 7.12, Temperature characteristics Within ± 15% table 8, condition B, are based on measurements carried out at 20˚C, with no voltage applied. Based on paragraph 8.11.2. Terminal adherence No peeling or sign of peeling on terminal. Apply 5N (0.51 kg · f) for 10 ± 1s in the direction indicated Pressure (5N) by the arrow. Test boardCapacitor Appearance There must be no mechanical damage. Chip is mounted to a board in the Resistance manner shown on the right, subjected to vibration Rate of capacitance change Must be within initial tolerance. to vibration (type A in paragraph 8.2), and measured 48 ± 4 hrs. later. Board Dissipation factor (Tanδ) Must satisfy initial specified value. Based on paragraph 8.13 Solderability At least 3/4 of the surface of the two terminals must be covered with new solder. Soldering temperature: 235 ± 5˚C Soldering time : 2 ± 0.5s Rate of capacitance change Within ± 5.0% Based on paragraph 8.14. Resistance Soldering temperature: 260 ± 5˚C to soldering Dissipation factor (Tanδ) Must satisfy initial specified value. Soldering time : 5 ± 0.5s heat Preheating : 150 ± 10˚C for Insulation resistance 10,000 MΩ or 500MΩ⋅µF, whichever is smaller 1 to 2 min. Withstanding voltage The insulation must not be damaged. Rate of capacitance change Within ± 7.5% Based on paragraph 9.3Temperature Number of cycles: 10 cycling Dissipation factor (Tanδ) Must satisfy initial specified value. Capacitance measured after 48 ± 4 hrs. Insulation resistance 10,000 MΩ or 500MΩ⋅µF, whichever is smaller Appearance There must be no mechanical damage. Based on paragraph 9.9 Humidity load Rate of capacitance change ± 12.5% or less Test temperature : 40 ± 2˚C test Relative humidity : 90% to 95% Dissipation factor (Tanδ) 5.0%or less Applied voltage : rated voltage Test time : 500 to 524 hrs. Capacitance measured after 48 ± 4 hrs. Insulation resistance 500 MΩ or 25MΩ⋅µF, whichever is smaller Appearance There must be no mechanical damage. Based on paragraph 9.10 High- Rate of capacitance change Within ± 10.0% Test temperature : Max. operating temp. temperature Applied voltage : rated voltage x 200% load test Dissipation factor (Tanδ) 5.0% or less Test time : 1,000 to 1,048 hrs. Capacitance measured after 48 ± 4 hrs. Insulation resistance 1,000MΩ or 50MΩ⋅µF, whichever is smaller, !Packaging (Units: mm)

Taping Reel

11.4 ± 1.0 4.0 ± 0.1 2.0 ± 0.05 4.0 ± 0.1 φ1.5 + 0.1– 0 1.05Max. 2.0 ± 0.1 1.2Max. Pull-out direction (paper taping) Label position (φ180mm reel)

EIAJ ETX-7001 compliant

3.5 ± 0.1 3.5 ± 0.05 1.75 ± 0.1 8.0 ± 0.3 φ13 ± 0.2 9.0 ± 0.3 φ60 + 1– 0 φ180 + 0– 3, !Electrical characteristics !A (C0G) Characteristics 5 10000 0 10 – 1 1 100pF – 2 – 3 220pF 0.1 – 4 470pF – 5 0 – 50 0 50 100 1 10 100 1000 10000 TEMPERATURE: (°C) FREQUENCY (MHz) Fig.1 Capacitance-temperature Fig.2 Impedance-frequency characteristics characteristics !C (X7R) Characteristics 30 1000 ∆C / C 100 – 10 – 20 10 – 30 1 1,000pF 15 0.1 10 10,000pF tanδ500.01 – 50 0 50 100 1 10 100 1000 10000 TEMPERATURE: (°C) FREQUENCY (MHz) Fig.3 Capacitance-temperature Fig.4 Impedance-frequency characteristics characteristics RATE OF CAPACITANCE CHANGE: (%) RATE OF CAPACITANCE CHANGE: (%) tanδ (%) IMPEDANCE (Ω) IMPEDANCE (Ω), !Temperature cycling test

A (C0G) Characteristics (100pF)

3.0 0.6 JIS C 5102 9. 3 JIS C 5102 9. 3 SAMPLE SIZE: n = 50pcs SAMPLE SIZE: n = 50pcs JIS C 5102 9. 3 – 55/ + 125°C 100cyc – 55/ + 125°C 100cyc SAMPLE SIZE: n = 50pcs 2.0 0.5 – 55/ + 125°C 100cyc 1 × 1 012 1.0 0.4 0 0.3 – 1.0 0.2 – 2.0 0.1 – 3.001× 1011 INITIAL VALUE TESTED INITIAL VALUE TESTED INITIAL VALUE TESTED

Fig.5 Rate of capacitance change Fig.6 Tanδ Fig.7 Insulation resistance

C (X7R) Characterisics (10,000pF) 15.0 JIS C 5102 9. 3 6.0 JIS C 5102 9. 3 SAMPLE SIZE: n = 50pcs JIS C 5102 9. 3SAMPLE SIZE: n = 50pcs – 55/ + 125°C 100cyc SAMPLE SIZE: n = 50pcs 10.0 – 55/ + 125°C 100cyc5.0 – 55/ + 125°C 100cyc 1 × 1012 5.0 4.0 0 3.0 – 5.0 2.0 – 10.0 1.0 – 15.001× 10 INITIAL VALUE TESTED INITIAL VALUE TESTED INITIAL VALUE TESTED

Fig.8 Rate of capacitance change Fig.9 Tanδ Fig.10 Insulation resistance

!High – temperature load test

A (C0G) Characteristics (100pF)

3.0 0.6 JIS C 5102 9. 10 JIS C 5102 9. 10 SAMPLE SIZE: n = 50pcs SAMPLE SIZE: n = 50pcs 2.0 + 125°C 1,000h 0.5 + 125°C 1,000h 12 OVERLOAD: 200% RATED VOLTAGE OVERLOAD: 200% RATED VOLTAGE 1 × 10 1.0 0.4 0.0 0.3 1 × 1011 – 1.0 0.2 JIS C 5102 9. 10 SAMPLE SIZE: n = 50pcs – 2.0 0.1 + 125°C 1,000h OVERLOAD: 200% RATED VOLTAGE – 3.001× 10 0 240 480 720 1000 0 240 480 720 1000 0 240 480 720 1000 TIME (h) TIME (h) TIME (h)

Fig.11 Rate of capacitance change Fig.12 Tanδ Fig.13 Insulation resistance

RATE OF CAPACITANCE CHANGE: (%) RATE OF CAPACITANCE CHANGE: (%) RATE OF CAPACITANCE CHANGE: (%) Tanδ: (%) Tanδ: (%) Tanδ: (%) IR: (Ω) IR: (Ω) IR: (Ω),

C (X7R) Characteristics (10,000pF)

15.0 6.0 JIS C 5102 9. 10 JIS C 5102 9. 10 JIS C 5102 9. 10 SAMPLE SIZE: n = 50pcs SAMPLE SIZE: n = 50pcs SAMPLE SIZE: n = 50pcs+ 125°C 1,000h 10.0 + 125°C 1,000h 5.0 + 125°C 1,000h OVERLOAD: 200% RATED VOLTAGE OVERLOAD: 200% RATED VOLTAGE OVERLOAD: 200% RATED VOLTAGE 1 × 1012 5.0 4.0 0.0 3.0 – 5.0 2.0 – 10.0 1.0 – 15.001× 1011 0 240 480 720 1000 0 240 480 720 1000 0 240 480 720 1000 TIME (h) TIME (h) TIME (h)

Fig.14 Rate of capacitance change Fig.15 Tanδ Fig.16 Insulation resistance

!Humidity load test

A (C0G) Characteristics (100pF)

3.0 0.6 JIS C 5102 9. 9 JIS C 5102 9. 9 JIS C 5102 9. 9 SAMPLE SIZE: n = 50pcs SAMPLE SIZE: n = 50pcs SAMPLE SIZE: n = 50pcs + 40°C 90 ~ 95%RH 1,000h ° + 40°C 90 ~ 95%RH 1,000h2.0 0.5 + 40 C 90 ~ 95%RH 1,000h OVERLOAD: THE RATED VOLTAGE OVERLOAD: THE RATED VOLTAGEOVERLOAD: THE RATED VOLTAGE 1 × 1012 1.0 0.4 0.0 0.3 1 × 1011 – 1.0 0.2 – 2.0 0.1 – 3.001× 10 0 240 480 720 1000 0 240 480 720 1000 0 240 480 720 1000 TIME (h) TIME (h) TIME (h)

Fig.17 Rate of capacitance change Fig.18 Tanδ Fig.19 Insulation resistance C (X7R) Characteristics (10,000pF)

15.0 6.0 JIS C 5102 9. 9 JIS C 5102 9. 9 SAMPLE SIZE: n = 50pcs SAMPLE SIZE: n = 50pcs 10.0 + 40°C 90 ~ 95%RH 1,000h + 40°C 90 ~ 95%RH 1,000h5.0 OVERLOAD: THE RATED VOLTAGE × OVERLOAD: THE RATED VOLTAGE1 1012 5.0 4.0 0 3.0 1 × 1011 – 5.0 2.0 JIS C 5102 9. 9 – 10.0 1.0 SAMPLE SIZE: n = 50pcs + 40°C 90 ~ 95%RH 1,000h – 15.0 OVERLOAD: THE RATED VOLTAGE0 1 × 10 0 240 480 720 1000 0 240 480 720 1000 0 240 480 720 1000 TIME (h) TIME (h) TIME (h)

Fig.20 Rate of capacitance change Fig.21 Tanδ Fig.22 Insulation resistance

RATE OF CAPACITANCE CHANGE: (%) RATE OF CAPACITANCE CHANGE: (%) RATE OF CAPACITANCE CHANGE: (%) Tanδ: (%) Tanδ: (%) Tanδ: (%) IR: (Ω) IR: (Ω) IR: (Ω)]

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