Download: DISCRETE SEMICONDUCTORS DATA SHEET BY8000 series Fast high-voltage soft-recovery controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of June 1994

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D117 BY8000 series Fast high-voltage soft-recovery controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of June 1994 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION expansion of all used parts are matched. • Glass passivated Rugged glass package, using a high • High maximum operating temperature alloyed construction. The package is designed to be used temperature in an insulating medium such asThis package is hermetically sealed resin, oil or SF6 gas. • Low leakage current and fatigue free as co...
Author: Sheyes1981 Shared: 8/19/19
Downloads: 44 Views: 146

Content

DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, 2 columns M3D117

BY8000 series Fast high-voltage soft-recovery

controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of June 1994 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION expansion of all used parts are matched. • Glass passivated Rugged glass package, using a high • High maximum operating temperature alloyed construction. The package is designed to be used temperature in an insulating medium such asThis package is hermetically sealed resin, oil or SF6 gas. • Low leakage current and fatigue free as coefficients of • Excellent stability • Guaranteed avalanche energy absorption capability • Soft-recovery switching characteristics • Compact construction. handbook, halfpkage a

APPLICATIONS

• For colour television and monitors MAM163 up to 25 kHz • High-voltage applications for: – Multipliers – Layer-wound diode-split- transformers where controlled Fig.1 Simplified outline (SOD61) and symbol. avalanche is required.

MARKING

Cathode band colour codes TYPE NUMBER PACKAGE CODE INNER BAND OUTER BAND BY8004 SOD61AC violet black BY8006 SOD61AD violet green BY8008 SOD61AE violet red BY8010 SOD61AF violet violet BY8012 SOD61AH violet orange BY8014 SOD61AI violet lilac BY8016 SOD61AJ violet grey 1996 May 24 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BY8004 − 5 kV BY8006 − 8 kV BY8008 − 10 kV BY8010 − 12 kV BY8012 − 14 kV BY8014 − 17 kV BY8016 − 19 kV VRW working reverse voltage BY8004 − 4 kV BY8006 − 6 kV BY8008 − 8 kV BY8010 − 10 kV BY8012 − 12 kV BY8014 − 14 kV BY8016 − 16 kV IF(AV) average forward current averaged over any BY8004 20 ms period; − 20 mA see Figs 2 to 8 BY8006 − 10 mA BY8008 − 5 mA BY8010 − 5 mA BY8012 − 5 mA BY8014 − 5 mA BY8016 − 3 mA IFRM repetitive peak forward current note 1 − 500 mA PRSM non-repetitive peak reverse power dissipation t = 20 µs half sinewave; BY8004 Tj = Tj max prior to surge − 2.5 kW BY8006 − 3.5 kW BY8008 − 4.2 kW BY8010 − 5.2 kW BY8012 − 7.0 kW BY8014 − 7.8 kW BY8016 − 9.1 kW Tstg storage temperature −65 +120 °C Tj junction temperature −65 +120 °C Note 1. Withstands peak currents during flash-over in a picture tube. 1996 May 24 3, ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 100 mA; Tj = Tj max; BY8004 see Figs 9 to 15 − − 20 V BY8006 − − 25 V BY8008 − − 30 V BY8010 − − 38 V BY8012 − − 50 V BY8014 − − 55 V BY8016 − − 63 V IR reverse current VR = VRWmax; Tj = 120 °C − − 3 µA Qr recovery charge when switched from IF = 100 mA to − − 1 nC VR ≥ 100 V and dIF/dt = −200 mA/µs; see Fig.16 tf fall time when switched from IF = 100 mA to 80 − − ns VR ≥ 100 V and dIF/dt = −200 mA/µs; see Fig.16 trr reverse recovery time when switched from IF = 2 mA to − − 100 ns IR = 4 mA; measured at IR = 1 mA; see Fig.17 Cd diode capacitance VR = 0 V; f = 1 MHz BY8004 − 0.90 − pF BY8006 − 0.65 − pF BY8008 − 0.55 − pF BY8010 − 0.45 − pF BY8012 − 0.35 − pF BY8014 − 0.30 − pF BY8016 − 0.25 − pF 1996 May 24 4,

GRAPHICAL DATA

MBD301 MBD303 20 10 handbook, halfpage handbook, halfpage I F(AV) I F(AV) (mA) a = 1.57 (mA) 168a= 1.57 12684a= 6.32 a = 6.3242000100 o 200 0 100 200Tamob( C) Tamb( C) BY8004. BY8006. a = IF(RMS)/IF(AV); VR = VRWmax; Rth j-a ≤ 120 K/W. a = IF(RMS)/IF(AV); VR = VRWmax; Rth j-a ≤ 120 K/W. a = 1.57: half sinewave. a = 1.57: half sinewave. a = 6.32: line output transformer application; see Fig.18. a = 6.32: line output transformer application; see Fig.18.

Fig.2 Maximum permissible average forward Fig.3 Maximum permissible average forward

current as a function of ambient temperature. current as a function of ambient temperature. MBD305 MBD30755handbook, halfpage handbook, halfpage I F(AV) I F(AV) (mA) a = 6.32 a = 1.57 (mA) a = 6.32 a = 1.5744332211000100 o 200 0 100 200Tamb( C) Toamb( C) BY8008. BY8010. a = IF(RMS)/IF(AV); VR = VRWmax; Rth j-a ≤ 120 K/W. a = IF(RMS)/IF(AV); VR = VRWmax; Rth j-a ≤ 120 K/W. a = 1.57: half sinewave. a = 1.57: half sinewave. a = 6.32: line output transformer application; see Fig.18. a = 6.32: line output transformer application; see Fig.18.

Fig.4 Maximum permissible average forward Fig.5 Maximum permissible average forward

current as a function of ambient temperature. current as a function of ambient temperature. 1996 May 24 5, MBD309 MBD31155handbook, halfpage handbook, halfpage I F(AV) I F(AV) (mA) a = 6.32 a = 1.57 (mA) a = 6.32 a = 1.5744332211000100 o 200 0 100 200Tamb( C) Tamb( o C) BY8012. BY8014. a = IF(RMS)/IF(AV); VR = VRWmax; Rth j-a ≤ 120 K/W. a = IF(RMS)/IF(AV); VR = VRWmax; Rth j-a ≤ 120 K/W. a = 1.57: half sinewave. a = 1.57: half sinewave. a = 6.32: line output transformer application; see see Fig.18. a = 6.32: line output transformer application; see Fig.18. Fig.6 Maximum permissible average forward Fig.7 Maximum permissible average forward current as a function of ambient temperature. current as a function of ambient temperature. MBD313 MBD300 5 200 handbook, halfpage handbook, halfpage I IF(AV) F (mA) (mA) 4 160 3 120 a = 6.32 a = 1.57 2 80 1 40000100 o 200 0 10 20 30 40 50 60Tamb( C) V F (V) BY8016. a = IF(RMS)/IF(AV); VR = VRWmax; Rth j-a ≤ 120 K/W. BY8004. a = 1.57: half sinewave. Dotted line: Tj = 120 °C. a = 6.32: line output transformer application; see Fig.18. Solid line: Tj = 25 °C. Fig.8 Maximum permissible average forward Fig.9 Forward current as a function of maximum current as a function of ambient temperature. forward voltage. 1996 May 24 6, MBD302 MBD304 200 200 handbook, halfpage handbook, halfpageIFIF(mA) (mA) 160 160 120 120 80 80 40 4000010 20 30 40 50 60 0 20 40 60 80 100VF(V) V F (V) BY8006. BY8008. Dotted line: Tj = 120 °C. Dotted line: Tj = 120 °C. Solid line: Tj = 25 °C. Solid line: Tj = 25 °C. Fig.10 Forward current as a function of maximum Fig.11 Forward current as a function of maximum forward voltage. forward voltage. MBD306 MBD308 200 200 handbook, halfpage handbook, halfpageIFIF(mA) (mA) 160 160 120 120 80 80 40 4000020 40 60 80 100 120 0 20 40 60 80 100 120VF(V) V F (V) BY8010. BY8012. Dotted line: Tj = 120 °C. Dotted line: Tj = 120 °C. Solid line: Tj = 25 °C. Solid line: Tj = 25 °C. Fig.12 Forward current as a function of maximum Fig.13 Forward current as a function of forward voltage. maximum forward voltage. 1996 May 24 7, MBD310 MBD312 200 200 handbook, halfpage handbook, halfpageIFIF(mA) (mA) 160 160 120 120 80 80 40 4000020 40 60 80 100 120 0 40 80 120 160 200VF(V) V F (V) BY8014. BY8016. Dotted line: Tj = 120 °C. Dotted line: Tj = 120 °C. Solid line: Tj = 25 °C. Solid line: Tj = 25 °C. Fig.14 Forward current as a function of maximum Fig.15 Forward current as a function of maximum forward voltage. forward voltage. handbIFook, halfpage dIF dt 10% t Qr 90% IR tf MRC129 - 1 Fig.16 Reverse recovery definitions. 1996 May 24 8, handbook, full pagewidth MBH420

IF

(mA) 0.1 µF trr 2 mA 50Ω0t

IR

(mA) Rise time oscilloscope: tr < 7 ns. Generator pulse width: 1.0 µs. Fig.17 Test circuit and reverse recovery time waveform and definition. APPLICATION INFORMATION

V

handbook, full pagewidth R

VR

DUT IoVIVo V VRW RRM t Tnom MAM105 - 1 Fig.18 Typical operation circuit and voltage waveform. 1996 May 24 9, PACKAGE OUTLINE 5 max handbook, full pagewidth 0.6kamax 2.5LGLMBC899 - 1 max Dimensions in mm. Fig.19 SOD61. SOD61 package specification TYPE PACKAGE Lmin Gmax NUMBER CODE (mm) (mm) BY8004 SOD61AC 30.4 8.3 BY8006 SOD61AD 30.2 8.7 BY8008 SOD61AE 30.0 9.1 BY8010 SOD61AF 29.8 9.5 BY8012 SOD61AH 29.3 10.5 BY8014 SOD61AI 28.8 11.5 BY8016 SOD61AJ 28.3 12.5

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 24 10]
15

Similar documents

DATA SHEET BY614 Miniature high-voltage soft-recovery rectifier
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D189 BY614 Miniature high-voltage soft-recovery rectifier Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION expansion of all used parts are matched. • Glass passivated
DISCRETE SEMICONDUCTORS DATA SHEET BY584 High-voltage soft-recovery rectifier Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D189 BY584 High-voltage soft-recovery rectifier Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION expansion of all used parts are matched. • Glass passivated Rugged gla
DISCRETE SEMICONDUCTORS DATA SHEET BY527 Controlled avalanche rectifier Product specification 1996 Jun 11 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BY527 Controlled avalanche rectifier Product specification 1996 Jun 11 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • G
DISCRETE SEMICONDUCTORS DATA SHEET BY505 High-voltage soft-recovery rectifier Product specification 1996 May 28 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D189 BY505 High-voltage soft-recovery rectifier Product specification 1996 May 28 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION expansion of all used parts are matched. • Glass passivated Rugged gla
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOD100 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT rectifier diode in a full pack plastic envelope, featuring fast forward VRRM Repetitive peak reverse voltage 1500 V recovery and low forward recovery VF Forward voltage 1.2 V voltage. The device is i
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AC PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT rectifier diode in a plastic envelope, featuring fast forward recovery and VRRM Repetitive peak reverse voltage 1500 V low forward recovery voltage. The VF Forward voltage 1.2 V device is intended fo
DISCRETE SEMICONDUCTORS DATA SHEET BY448 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BY448 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Ru
DISCRETE SEMICONDUCTORS DATA SHEET BY428 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY428 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Ru
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOD113 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT rectifier diode in a full pack plastic envelope featuring low forward VRRM Repetitive peak reverse voltage 1500 V voltage drop, fast reverse recovery VF Forward voltage 1.5 V and soft recovery charac
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOD100 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT rectifier diode in a full pack plastic envelope featuring low forward VRRM Repetitive peak reverse voltage 1500 V voltage drop, fast reverse recovery VF Forward voltage 1.5 V and soft recovery charac
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AC PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT rectifier diode in a plastic envelope featuring low forward voltage drop, VRRM Repetitive peak reverse voltage 1500 V fast reverse recovery and soft VF Forward voltage 1.5 V recovery characteristic.
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AC PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. MAX. MAX. UNIT rectifier diodes in a plastic envelope featuring low forward voltage drop, BY329 -800 -1000 -1200 fast reverse recovery and soft VRRM Repetitive peak reverse 800 1000 1200 V recovery charac
DISCRETE SEMICONDUCTORS DATA SHEET BY328 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY328 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Ru
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AC PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. MAX. UNIT rectifier diodes in a plastic envelope. The devices are intended for low BY249 -300 -600 frequency power rectifier VRRM Repetitive peak reverse voltage 300 600 V applications. IF(AV) Average for
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOD100 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT rectifier diodes in a plastic full pack envelope featuring low forward BY229F -200 -400 -600 -800 voltage drop, fast reverse recovery VRRM Repetitive peak reverse 200 400 600 800 V and
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AC PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT rectifier diodes in a plastic envelope featuring low forward voltage drop, BY229 -200 -400 -600 -800 fast reverse recovery and soft VRRM Repetitive peak reverse 200 400 600 800 V recov
DISCRETE SEMICONDUCTORS DATA SHEET BY228 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY228 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Ru
BUZ 91 A
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin3GDSType VDS ID RDS(on) Package Ordering Code BUZ 91 A 600V8A0.9 Ω TO-220 AB C67078-S1342-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 33 °C 8 Pulsed drain current IDpuls T
BUZ 90 A
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin3GDSType VDS ID RDS(on) Package Ordering Code BUZ 90 A 600V4A2ΩTO-220 AB C67078-S1321-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 30 °C 4 Pulsed drain current IDpuls TC =
BUZ 80 A
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin3GDSType VDS ID RDS(on) Package Ordering Code BUZ 80 A 800 V 3.6A3ΩTO-220 AB C67078-S1309-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 26 °C 3.6 Pulsed drain current IDpuls
BUZ71/FI
BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID BUZ71 50 V < 0.1 Ω 18 A BUZ71FI 50 V < 0.1 Ω 12 A ■ TYPICAL RDS(on) = 0.06 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE 3 32 2 ■ HIGH CURRENT CAPABI
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT BUX 86P 87P VCESM
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT82 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-e
BUX48 / BUX48A / BUV48A / BUV48AFI
BUX48/48A ® BUV48A/V48AFI HIGH POWER NPN SILICON TRANSISTORS ■ STMicroelectronics PREFERRED SALESTYPES ■ NPN TRANSISTOR ■ HIGH VOLTAGE CAPABILITY ■ HIGH CURRENT CAPABILITY ■ FAST SWITCHING SPEED1321APPLICATIONS ■ SWITCH MODE POWER SUPPLIES TO-3 TO-218 ■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWE
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION High-voltage, monolithic npn power Darlington transistor in a SOT199 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION High-voltage, monolithic npn power Darlington transistor in a SOT93 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE =
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value V
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter volt
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control systems etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS
Infineon BUP 314D
IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 Pin3GCEType VCE IC Package Ordering Code BUP 314D 1200V 42A TO-218 AB Q67040-A4226 Maximum Ratings Parameter Symbol Values