Download: DISCRETE SEMICONDUCTORS DATA SHEET BY428 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY428 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Rugged glass package, using a high expansion of all used parts are • High maximum operating temperature alloyed construction. matched. temperature • Low leakage current • Excellent stability • Available in ammo-pack 2/3 page k(Datasheet) a • Also available with preformed leads for easy insertion. MAM1...
Author:
Sheyes1981 Shared: 8/19/19
Downloads: 58 Views: 953
Content
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns M3D118BY428 Damper diode
Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Rugged glass package, using a high expansion of all used parts are • High maximum operating temperature alloyed construction. matched. temperature • Low leakage current • Excellent stability • Available in ammo-pack 2/3 page k(Datasheet) a • Also available with preformed leads for easy insertion. MAM104APPLICATIONS
• Damper diode in high frequency horizontal deflection circuits up to Fig.1 Simplified outline (SOD64) and symbol. 64 kHz. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRSM non-repetitive peak reverse voltage − 1500 V VRRM repetitive peak reverse voltage − 1500 V VR continuous reverse voltage − 1400 V IFWM working peak forward current Ttp = 80 °C; lead length = 10 mm; − 4 A see Fig.2 IFRM repetitive peak forward current − 8 A IFSM non-repetitive peak forward current t = 10 ms half sinewave; − 50 A Tj = Tj max prior to surge; VR = VRRMmax Tstg storage temperature −65 +175 °C Tj junction temperature −65 +150 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 4 A; Tj = Tj max; see Fig.3 1.60 V IF = 4 A; see Fig.3 1.95 V IR reverse current VR = VRRMmax; Tj = 150 °C 150 µA trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; 250 ns measured at IR = 0.25 A; see Fig.6 tfr forward recovery time when switched to IF = 5 A in 50 ns; 250 ns Tj = Tj max; see Fig.7 1996 May 24 2, THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 25 K/W Rth j-a thermal resistance from junction to ambient note 1 75 K/W mounted as shown in Fig.5 40 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.4. For more information please refer to the “General Part of Handbook SC01”. 1996 May 24 3,GRAPHICAL DATA
MBH409 MBH41048handbook, halfpage handbook, halfpage Ptot IF (W) (A) 362412000123456012VF (V) IFWM (A) Solid line: basic high-voltage E/W modulator circuit; see Fig.8. Dotted line: basic conventional horizontal deflection circuit; see Fig.9. Dotted line: Tj = 150 °C. Curves include power dissipation due to switching losses. Solid line: Tj = 25 °C.Fig.2 Maximum total power dissipation as a Fig.3 Forward current as a function of forward
function of working peak forward current. voltage; maximum values. handbook, halfpage 35 50 10 handbook, halfpage 3 cm2 3 cm2 7 copper copper MGA200 MGA204 25.4 Dimensions in mm. Dimensions in mm.Fig.5 Mounting with additional printed circuit board Fig.4 Device mounted on a printed-circuit board. for heat sink purposes.
1996 May 24 4, handbook, full pagewidth IDUT F (A) + 0.5 10 Ω 25Vtrr1Ω50Ω0t0.25 0.5IR
(A) 1 MAM057 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.6 Test circuit and reverse recovery time waveform and definition. MGD600 handbook, halfpageVF 90% 100% t t frIF
10% t Fig.7 Forward recovery time definition. 1996 May 24 5, APPLICATION INFORMATION For horizontal deflection circuits, two basic applications are shown in Figs 8 and 9. The maximum allowable total power dissipation for the diode can be calculated from the thermal resistance Rth j-a and the difference between Tj max and Tamb max in the application. The maximum IFWM can then be taken from Fig.2. The basic application waveforms in Fig.10 relate to the circuit in Fig.8. In the circuit in Fig.9 the forward conduction time of the diode is shorter, allowing a higher IFWM (see Fig.2). handbook, hhaolrfpizaognetal deflection handbook, haolfrpizaogental transistor D1 LY deflection transistorL
D1 C Yf Cs + (E-W) MBE934 MBE935 D1 = BY428. D1 = BY428. Fig.8 Application in basic high-voltage E/W Fig.9 Application in basic horizontal modulator circuit. deflection circuit. handbook, full pagewidthIFIFRM I FWM timeV
V RRMR timetpTMCD430 - 1 Fig.10 Basic application waveforms. 1996 May 24 6, PACKAGE OUTLINE handbook, full pagewidthka1.35 max 4.5 max 28 min 5.0 max 28 min MBC049 Dimensions in mm. Fig.11 SOD64.DEFINITIONS
Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 24 7]15
Similar documents

GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT rectifier diode in a full pack plastic envelope featuring low forward VRRM Repetitive peak reverse voltage 1500 V voltage drop, fast reverse recovery VF Forward voltage 1.5 V and soft recovery charac

GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT rectifier diode in a full pack plastic envelope featuring low forward VRRM Repetitive peak reverse voltage 1500 V voltage drop, fast reverse recovery VF Forward voltage 1.5 V and soft recovery charac

GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. MAX. MAX. UNIT rectifier diodes in a plastic envelope featuring low forward voltage drop, BY329 -800 -1000 -1200 fast reverse recovery and soft VRRM Repetitive peak reverse 800 1000 1200 V recovery charac

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY328 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Ru

GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. MAX. UNIT rectifier diodes in a plastic envelope. The devices are intended for low BY249 -300 -600 frequency power rectifier VRRM Repetitive peak reverse voltage 300 600 V applications. IF(AV) Average for

GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT rectifier diodes in a plastic full pack envelope featuring low forward BY229F -200 -400 -600 -800 voltage drop, fast reverse recovery VRRM Repetitive peak reverse 200 400 600 800 V and

GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT rectifier diodes in a plastic envelope featuring low forward voltage drop, BY229 -200 -400 -600 -800 fast reverse recovery and soft VRRM Repetitive peak reverse 200 400 600 800 V recov

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY228 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Ru

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin3GDSType VDS ID RDS(on) Package Ordering Code BUZ 91 A 600V8A0.9 Ω TO-220 AB C67078-S1342-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 33 °C 8 Pulsed drain current IDpuls T

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin3GDSType VDS ID RDS(on) Package Ordering Code BUZ 80 A 800 V 3.6A3ΩTO-220 AB C67078-S1309-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 26 °C 3.6 Pulsed drain current IDpuls

BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID BUZ71 50 V < 0.1 Ω 18 A BUZ71FI 50 V < 0.1 Ω 12 A ■ TYPICAL RDS(on) = 0.06 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE 3 32 2 ■ HIGH CURRENT CAPABI

GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT BUX 86P 87P VCESM

GENERAL DESCRIPTION High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-e

BUX48/48A ® BUV48A/V48AFI HIGH POWER NPN SILICON TRANSISTORS ■ STMicroelectronics PREFERRED SALESTYPES ■ NPN TRANSISTOR ■ HIGH VOLTAGE CAPABILITY ■ HIGH CURRENT CAPABILITY ■ FAST SWITCHING SPEED1321APPLICATIONS ■ SWITCH MODE POWER SUPPLIES TO-3 TO-218 ■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWE

GENERAL DESCRIPTION High-voltage, monolithic npn power Darlington transistor in a SOT93 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE =

GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value V

GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter volt

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D121 BZV87 series Low-voltage stabistors Product specification 1996 Mar 21 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Low-voltage stabilization Low-voltage stabilization diode in a small glass SOD

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D130 BZV85 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Medium-power voltage regulator diodes in hermeti

DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 BZV55 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in small

DISCRETE SEMICONDUCTORS DATA SHEET M3D169 BZV37 Bidirectional voltage regulator diode Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Low total power dissipation: Low-power voltage regulator diode in an hermetically seal

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BZT03 series Voltage regulator diodes Product specification 1996 Jun 11 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION construction. This package is hermetically sealed and fatigue free • Glass