Download: DISCRETE SEMICONDUCTORS DATA SHEET BY428 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, 2 columns M3D118

BY428 Damper diode

Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Rugged glass package, using a high expansion of all used parts are • High maximum operating temperature alloyed construction. matched. temperature • Low leakage current • Excellent stability • Available in ammo-pack 2/3 page k(Datasheet) a • Also available with preformed leads for easy insertion. MAM104

APPLICATIONS

• Damper diode in high frequency horizontal deflection circuits up to Fig.1 Simplified outline (SOD64) and symbol. 64 kHz. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRSM non-repetitive peak reverse voltage − 1500 V VRRM repetitive peak reverse voltage − 1500 V VR continuous reverse voltage − 1400 V IFWM working peak forward current Ttp = 80 °C; lead length = 10 mm; − 4 A see Fig.2 IFRM repetitive peak forward current − 8 A IFSM non-repetitive peak forward current t = 10 ms half sinewave; − 50 A Tj = Tj max prior to surge; VR = VRRMmax Tstg storage temperature −65 +175 °C Tj junction temperature −65 +150 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 4 A; Tj = Tj max; see Fig.3 1.60 V IF = 4 A; see Fig.3 1.95 V IR reverse current VR = VRRMmax; Tj = 150 °C 150 µA trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; 250 ns measured at IR = 0.25 A; see Fig.6 tfr forward recovery time when switched to IF = 5 A in 50 ns; 250 ns Tj = Tj max; see Fig.7 1996 May 24 2, THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 25 K/W Rth j-a thermal resistance from junction to ambient note 1 75 K/W mounted as shown in Fig.5 40 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.4. For more information please refer to the “General Part of Handbook SC01”. 1996 May 24 3,

GRAPHICAL DATA

MBH409 MBH41048handbook, halfpage handbook, halfpage Ptot IF (W) (A) 362412000123456012VF (V) IFWM (A) Solid line: basic high-voltage E/W modulator circuit; see Fig.8. Dotted line: basic conventional horizontal deflection circuit; see Fig.9. Dotted line: Tj = 150 °C. Curves include power dissipation due to switching losses. Solid line: Tj = 25 °C.

Fig.2 Maximum total power dissipation as a Fig.3 Forward current as a function of forward

function of working peak forward current. voltage; maximum values. handbook, halfpage 35 50 10 handbook, halfpage 3 cm2 3 cm2 7 copper copper MGA200 MGA204 25.4 Dimensions in mm. Dimensions in mm.

Fig.5 Mounting with additional printed circuit board Fig.4 Device mounted on a printed-circuit board. for heat sink purposes.

1996 May 24 4, handbook, full pagewidth IDUT F (A) + 0.5 10 Ω 25Vtrr1Ω50Ω0t0.25 0.5

IR

(A) 1 MAM057 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.6 Test circuit and reverse recovery time waveform and definition. MGD600 handbook, halfpageVF 90% 100% t t fr

IF

10% t Fig.7 Forward recovery time definition. 1996 May 24 5, APPLICATION INFORMATION For horizontal deflection circuits, two basic applications are shown in Figs 8 and 9. The maximum allowable total power dissipation for the diode can be calculated from the thermal resistance Rth j-a and the difference between Tj max and Tamb max in the application. The maximum IFWM can then be taken from Fig.2. The basic application waveforms in Fig.10 relate to the circuit in Fig.8. In the circuit in Fig.9 the forward conduction time of the diode is shorter, allowing a higher IFWM (see Fig.2). handbook, hhaolrfpizaognetal deflection handbook, haolfrpizaogental transistor D1 LY deflection transistor

L

D1 C Yf Cs + (E-W) MBE934 MBE935 D1 = BY428. D1 = BY428. Fig.8 Application in basic high-voltage E/W Fig.9 Application in basic horizontal modulator circuit. deflection circuit. handbook, full pagewidthIFIFRM I FWM time

V

V RRMR timetpTMCD430 - 1 Fig.10 Basic application waveforms. 1996 May 24 6, PACKAGE OUTLINE handbook, full pagewidthka1.35 max 4.5 max 28 min 5.0 max 28 min MBC049 Dimensions in mm. Fig.11 SOD64.

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 24 7]

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