Download: GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AC PIN CONFIGURATION SYMBOL

GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. MAX. MAX. UNIT rectifier diodes in a plastic envelope featuring low forward voltage drop, BY329 -800 -1000 -1200 fast reverse recovery and soft VRRM Repetitive peak reverse 800 1000 1200 V recovery characteristic. The devices voltage are intended for use in TV receivers, IF(AV) Average forward current888Amonitors and switched mode power IFSM Non-repetitive peak 75 75 75 A supplies. forward current trr Reverse recovery time 135 135 135 ns PINNING - TO220AC PIN CONFIGURATION SYMBOL PIN DESCRIPTION tab...
Author: Sheyes1981 Shared: 8/19/19
Downloads: 1340 Views: 4473

Content

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass-passivated double diffused SYMBOL PARAMETER MAX. MAX. MAX. UNIT rectifier diodes in a plastic envelope featuring low forward voltage drop, BY329 -800 -1000 -1200 fast reverse recovery and soft VRRM Repetitive peak reverse 800 1000 1200 V recovery characteristic. The devices voltage are intended for use in TV receivers, IF(AV) Average forward current888Amonitors and switched mode power IFSM Non-repetitive peak 75 75 75 A supplies. forward current trr Reverse recovery time 135 135 135 ns

PINNING - TO220AC PIN CONFIGURATION SYMBOL

PIN DESCRIPTION tab 1 cathode (k) k 2 anode (a) a tab cathode (k) 1 2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -800 -1000 -1200 VRSM Non-repetitive peak reverse - 800 1000 1200 V voltage VRRM Repetitive peak reverse voltage - 800 1000 1200 V VRWM Crest working reverse voltage - 600 800 1000 V IF(AV) Average forward current 1 square wave; δ = 0.5; - 8 A Tmb ≤ 122 ˚C sinusoidal; a = 1.57; - 7 A Tmb ≤ 125 ˚C IF(RMS) RMS forward current - 11 A IFRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 16 A Tmb ≤ 122 ˚C IFSM Non-repetitive peak forward t = 10 ms - 75 A current. t = 8.3 ms - 82 A sinusoidal; Tj = 150 ˚C prior to surge; with reapplied VRWM(max) I2t I2t for fusing t = 10 ms - 28 A2s Tstg Storage temperature -40 150 ˚C Tj Operating junction temperature - 150 ˚C 1 Neglecting switching and reverse current losses. October 1994 1 Rev 1.100,

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-mb Thermal resistance junction to - - 2.0 K/W mounting base Rth j-a Thermal resistance junction to in free air. - 60 - K/W ambient

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF Forward voltage IF = 20 A - 1.5 1.85 V IR Reverse current VR = VRWM; Tj = 125 ˚C - 0.1 1.0 mA

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT trr Reverse recovery time IF = 1 A; VR > 30 V; -dIF/dt = 50 A/µs - 100 135 ns Qs Reverse recovery charge IF = 2 A; VR > 30 V; -dIF/dt = 20 A/µs - 0.5 0.7 µC dIR/dt Maximum slope of the reverse IF = 2 A; -dIF/dt = 20 A/µs - 50 60 A/µs recovery current October 1994 2 Rev 1.100, dI IFS (RMS) / A BY329I 100FFdt 90 80 IFSM trr 70 time Qs 25% 100% 20 I 10RIrrm 0 1ms 10ms 0.1s 1s 10s tp / s

Fig.1. Definition of trr, Qs and Irrm Fig.4. Maximum non-repetitive rms forward current. IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior

to surge with reapplied VRWM. PF / W BY329 Tmb(max) / C IF / A BY229F 20 110 30 Vo = 1.25VD= 1.0 Tj = 150 C Rs = 0.03 Ohms Tj = 25 C 15 0.5 120 0.2 10 130 0.1 t tp 10IpD= 5 T 140 typ maxTt015000246810 12 0 0.5 1 1.5 2 IF(AV) / A VF / V

Fig.2. Maximum forward dissipation, PF = f(IF(AV)); Fig.5. Typical and maximum forward characteristic;

square wave current waveform; parameter D = duty IF = f(VF); parameter Tj cycle = tp/T. PF / W BY329 Tmb(max) / C Qs / uC BY329 15 120 10 Tj = 150 C Vo = 1.25Va= 1.57 Tj = 25 C Rs = 0.03 Ohms IF = 10 A 1.9 2.2 10 130 10 A 2.82A1A412A1A5140 0 150 0.102468110 100 IF(AV) / A -dIF/dt (A/us)

Fig.3. Maximum forward dissipation, PF = f(IF(AV)); Fig.6. Maximum Qs at Tj = 25˚C and 150˚C

sinusoidal current waveform; parameter a = form factor = IF(RMS)/IF(AV).

October 1994 3 Rev 1.100

, trr / ns BY329 Zth j-mb / (K/W) 1000 10 IF = 10 A 10A1A11A 0.1 PD tp Tj = 150 C Tj = 25Ct10 0.01 1 10 100 10us 100us 1ms 10ms 0.1s 1s 10s -dIF/dt (A/us) tp / s Fig.7. Maximum trr measured to 25% of Irrm; Tj = 25˚C Fig.9. Transient thermal impedance Zth = f(tp) and 150˚C Cd / pF BY329100 1 10 VR / V 100 1000 Fig.8. Typical junction capacitance Cd at f = 1 MHz; Tj = 25˚C October 1994 4 Rev 1.100, MECHANICAL DATA Dimensions in mm 4,5 Net Mass: 2 g max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max12(2x) 0,9 max (2x) 0,6 5,08 2,4 Fig.10. TO220AC; pin 1 connected to mounting base. Notes 1. Accessories supplied on request: refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1994 5 Rev 1.100,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1994 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1994 6 Rev 1.100]
15

Similar documents

DISCRETE SEMICONDUCTORS DATA SHEET BY328 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY328 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Ru
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AC PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. MAX. UNIT rectifier diodes in a plastic envelope. The devices are intended for low BY249 -300 -600 frequency power rectifier VRRM Repetitive peak reverse voltage 300 600 V applications. IF(AV) Average for
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOD100 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT rectifier diodes in a plastic full pack envelope featuring low forward BY229F -200 -400 -600 -800 voltage drop, fast reverse recovery VRRM Repetitive peak reverse 200 400 600 800 V and
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AC PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT rectifier diodes in a plastic envelope featuring low forward voltage drop, BY229 -200 -400 -600 -800 fast reverse recovery and soft VRRM Repetitive peak reverse 200 400 600 800 V recov
DISCRETE SEMICONDUCTORS DATA SHEET BY228 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY228 Damper diode Product specification 1996 May 24 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Ru
BUZ 91 A
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin3GDSType VDS ID RDS(on) Package Ordering Code BUZ 91 A 600V8A0.9 Ω TO-220 AB C67078-S1342-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 33 °C 8 Pulsed drain current IDpuls T
BUZ 90 A
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin3GDSType VDS ID RDS(on) Package Ordering Code BUZ 90 A 600V4A2ΩTO-220 AB C67078-S1321-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 30 °C 4 Pulsed drain current IDpuls TC =
BUZ 80 A
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin3GDSType VDS ID RDS(on) Package Ordering Code BUZ 80 A 800 V 3.6A3ΩTO-220 AB C67078-S1309-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 26 °C 3.6 Pulsed drain current IDpuls
BUZ71/FI
BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID BUZ71 50 V < 0.1 Ω 18 A BUZ71FI 50 V < 0.1 Ω 12 A ■ TYPICAL RDS(on) = 0.06 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE 3 32 2 ■ HIGH CURRENT CAPABI
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT BUX 86P 87P VCESM
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - SOT82 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-e
BUX48 / BUX48A / BUV48A / BUV48AFI
BUX48/48A ® BUV48A/V48AFI HIGH POWER NPN SILICON TRANSISTORS ■ STMicroelectronics PREFERRED SALESTYPES ■ NPN TRANSISTOR ■ HIGH VOLTAGE CAPABILITY ■ HIGH CURRENT CAPABILITY ■ FAST SWITCHING SPEED1321APPLICATIONS ■ SWITCH MODE POWER SUPPLIES TO-3 TO-218 ■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWE
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION High-voltage, monolithic npn power Darlington transistor in a SOT199 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION High-voltage, monolithic npn power Darlington transistor in a SOT93 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE =
GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value V
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter volt
GENERAL DESCRIPTION QUICK REFERENCE DATA
GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control systems etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS
Infineon BUP 314D
IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 Pin3GCEType VCE IC Package Ordering Code BUP 314D 1200V 42A TO-218 AB Q67040-A4226 Maximum Ratings Parameter Symbol Values
DISCRETE SEMICONDUCTORS DATA SHEET BZV90 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of November 1993 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 BZV90 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES PINNING • Total power dissipation: PIN DESCRIPTION max. 1500 mW 1 anode • Tolerance
DATA SHEET BZV87 series Low-voltage stabistors
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D121 BZV87 series Low-voltage stabistors Product specification 1996 Mar 21 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Low-voltage stabilization Low-voltage stabilization diode in a small glass SOD
DISCRETE SEMICONDUCTORS DATA SHEET BZV85 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D130 BZV85 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Medium-power voltage regulator diodes in hermeti
DISCRETE SEMICONDUCTORS DATA SHEET BZV55 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of November 1993 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 BZV55 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Low-power voltage regulator diodes in small
DISCRETE SEMICONDUCTORS DATA SHEET BZV49 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of November 1993 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D109 BZV49 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES PINNING • Total power dissipation: PIN DESCRIPTION max. 1000 mW 1 anode • Tolerance
DATA SHEET BZV37 Bidirectional voltage regulator diode
DISCRETE SEMICONDUCTORS DATA SHEET M3D169 BZV37 Bidirectional voltage regulator diode Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Low total power dissipation: Low-power voltage regulator diode in an hermetically seal
DISCRETE SEMICONDUCTORS DATA SHEET BZD27 series Voltage regulator diodes Product specification 1996 Jun 10 Supersedes data of October 1991 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D121 BZD27 series Voltage regulator diodes Product specification 1996 Jun 10 Supersedes data of October 1991 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION hermetically sealed and fatigue free as coefficients of expansion of all
DISCRETE SEMICONDUCTORS DATA SHEET BZT03 series Voltage regulator diodes Product specification 1996 Jun 11 Supersedes data of April 1992 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BZT03 series Voltage regulator diodes Product specification 1996 Jun 11 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION construction. This package is hermetically sealed and fatigue free • Glass
DATA SHEET BZG04 series Transient voltage suppressor diodes
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D168 BZG04 series Transient voltage suppressor diodes Preliminary specification 1996 Jun 10 Supersedes data of October 1991 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION The well-defined void-free case is of a transfer-moulded t
DISCRETE SEMICONDUCTORS DATA SHEET BZG03 series Voltage regulator diodes Preliminary specification 1996 Jun 07 Supersedes data of October 1993 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D168 BZG03 series Voltage regulator diodes Preliminary specification 1996 Jun 07 Supersedes data of October 1993 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION The well-defined void-free case is of a transfer-moulded thermo-setti
DISCRETE SEMICONDUCTORS DATA SHEET BZD23 series Voltage regulator diodes Product specification 1996 Jun 10 Supersedes data of October 1991 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 BZD23 series Voltage regulator diodes Product specification 1996 Jun 10 Supersedes data of October 1991 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION and fatigue free as coefficients of expansion of all used parts are • Gla
DISCRETE SEMICONDUCTORS DATA SHEET BYX90G High-voltage soft-recovery controlled avalanche rectifier Product specification 1996 Jun 11 Supersedes data of April 1992
DISCRETE SEMICONDUCTORS DATA SHEET M3D181 BYX90G High-voltage soft-recovery controlled avalanche rectifier Product specification 1996 Jun 11 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION The package is designed to be used in an insulating medium such as