Download: BUZ 91 A

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin3GDSType VDS ID RDS(on) Package Ordering Code BUZ 91 A 600V8A0.9 Ω TO-220 AB C67078-S1342-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 33 °C 8 Pulsed drain current IDpuls TC = 25 °C 32 Avalanche current,limited by Tjmax IAR 8 Avalanche energy,periodic limited by Tjmax EAR 13 mJ Avalanche energy, single pulse EAS ID = 8 A, VDD = 50 V, RGS = 25ΩL= 16.3 mH, Tj = 25 °C 570 Gate source voltage VGS ± 20 V Power dissipation Ptot W TC = 25 °C 150 Operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 0.83 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Semiconductor Group 1 07/96, Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V(BR)DSS V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C 600 - - Gate threshold voltage VGS(th) VGS=VDS, ID = 1 mA 2.134Zero gate voltage drain current IDSS µA VDS = 600 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 600 V, VGS = 0 V, Tj = 125 °C - 10 100 Gate-source leakage current IGSS nA VGS = 20 V, VDS = 0 V - 10 100 Drain-Source on-resistance RDS(on) Ω VGS = 10 V, ID = 5 A - 0.8 0.9 Semiconductor Group 2 07/96, Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs S VDS≥ 2 * ID * RDS(on)max, ID = 5A58.5 - Input capacitance Ciss pF VGS = 0 V, VDS = 25 V, f = 1 MHz - 1400 2100 Output capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz - 180 270 Reverse transfer capacitance Crss VGS = 0 V, VDS = 25 V, f = 1 MHz - 65 100 Turn-on delay time td(on) ns VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω - 20 30 Rise time tr VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω - 70 110 Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω - 250 330 Fall time tf VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω - 80 100 Semiconductor Group 3 07/96, Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current IS A TC = 25 °C - - 8 Inverse diode direct current,pulsed ISM TC = 25 °C - - 32 Inverse diode forward voltage VSD V VGS = 0 V, IF = 16 A - 1.1 1.2 Reverse recovery time trr ns VR = 100 V, IF=lS, diF/dt = 100 A/µs - 480 - Reverse recovery charge Qrr µC VR = 100 V, IF=lS, diF/dt = 100 A/µs - 6.5 - Semiconductor Group 4 07/96,

Power dissipation Drain current P = ƒ(T ) ID = ƒ(TC)tot C

parameter: VGS ≥ 10 V 160 9

A W

P I totD740 2 20100020 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160 T TC C

Safe operating area Transient thermal impedance ID = ƒ(VDS) Zth JC = ƒ(tp)

parameter: D = 0.01, TC = 25°C parameter: D = tp / T 10 2 100tp= 3 .8µsAK/W 10 µsIZDthJC 100 µs 10 1 10 -1 1 ms 10 ms D = 0.50 0.20 10 0 10 -2 0.10 0.05 single pulse 0.02 0.01

DC

10 -1 10 -3 10 0 10 1 102V10 3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96RDS( o n ) = VDS/ I D,

Typ. output characteristics Typ. drain-source on-resistance ID = ƒ(VDS) RDS (on) = ƒ(ID)

parameter: tp = 80 µs parameter: VGS 18 Ptot = 150Wl 2.8kjabcihgfeΩAdV[V] 2.4 GS

I

D 14 a 4.0

R

DS (on) 2.2 b 4.5 2.0 c 5.0cd5.5 1.8 e 6.0 10 1.6 f 6.5 g 7.0 1.4d8h7.5 1.2 i 8.0 e 1.0f6j9.0hgbik 10.0 j0.8kl20.0 4 0.6 0.4V2GS [V] = aabcdefghijk0.2 4.05 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 0 0.00510 15 20 25 30 35 40 V 500246810 12 14 A 18 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs,

VDS≥2 x ID x RDS(on)max VDS≥2 x ID x RDS(on)max

10 12ASI8Dgfs6756451100012345678V1001234567A9VIGS D Semiconductor Group 6 07/96,

Drain-source on-resistance Gate threshold voltage R VDS (on) = ƒ(Tj) GS (th) = ƒ(Tj)

parameter: I = 5 A, V = 10 V parameter: VGS = VDS, ID = 1 mAD GS 4.0 4.6ΩV98% 4.0 R 3.2 V DS (on) GS(th) 3.6 2.8 3.2 typ 2.4 2.8 2.4 2.0 2% 2.0 1.6 98% 1.6 typ 1.2 1.2 0.8 0.8 0.4 0.4 0.0 0.0 -60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 160 T Tj j Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = ƒ(VSD)

parameter:VGS = 0V, f = 1MHz parameter: Tj, tp = 80 µs 10 1 10 2 nFACIF

C

10 0 iss 10 1

C

oss 10 -1 10 0 Tj = 25 °C typ

C

rss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 10 -10510 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0

V

DS VSD Semiconductor Group 7 07/96,

Avalanche energy EAS = ƒ(Tj) Typ. gate charge

parameter: ID = 8 A, VDD = 50 V VGS = ƒ(QGate)

RGS = 25 Ω, L = 16.3 mH parameter: ID puls = 12 A

600 16 mJ

V

E V AS GS 450 12 350 0,2 VDS max 0,8 VDS max 300 8 15040020 40 60 80 100 120 °C 160 0 20 40 60 80 100 130 Tj QGate

Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) V V

(BR)DSS -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07/96, Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96]

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