Download: BUZ 90 A

SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin3GDSType VDS ID RDS(on) Package Ordering Code BUZ 90 A 600V4A2ΩTO-220 AB C67078-S1321-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 30 °C 4 Pulsed drain current IDpuls TC = 25 °C 16 Avalanche current,limited by Tjmax IAR 4.5 Avalanche energy,periodic limited by Tjmax EAR 8 mJ Avalanche energy, single pulse EAS ID = 4.5 A, VDD = 50 V, RGS = 25ΩL= 29 mH, Tj = 25 °C 320 Gate source voltage VGS ± 20 V Power dissipation Ptot W TC = 25 °C 75 Operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 1.67 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Semiconductor Group 1 07/96, Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V(BR)DSS V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C 600 - - Gate threshold voltage VGS(th) VGS=VDS, ID = 1 mA 2.134Zero gate voltage drain current IDSS µA VDS = 600 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 600 V, VGS = 0 V, Tj = 125 °C - 10 100 Gate-source leakage current IGSS nA VGS = 20 V, VDS = 0 V - 10 100 Drain-Source on-resistance RDS(on) Ω VGS = 10 V, ID = 2.8 A - 1.7 2 Semiconductor Group 2 07/96, Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs S VDS≥ 2 * ID * RDS(on)max, ID = 2.8 A 2.5 3.8 - Input capacitance Ciss pF VGS = 0 V, VDS = 25 V, f = 1 MHz - 780 1050 Output capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz - 110 170 Reverse transfer capacitance Crss VGS = 0 V, VDS = 25 V, f = 1 MHz - 40 70 Turn-on delay time td(on) ns VDD = 30 V, VGS = 10 V, ID = 2.6 A RGS = 50 Ω - 20 30 Rise time tr VDD = 30 V, VGS = 10 V, ID = 2.6 A RGS = 50 Ω - 50 75 Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 2.6 A RGS = 50 Ω - 120 150 Fall time tf VDD = 30 V, VGS = 10 V, ID = 2.6 A RGS = 50 Ω - 70 90 Semiconductor Group 3 07/96, Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current IS A TC = 25 °C - - 4 Inverse diode direct current,pulsed ISM TC = 25 °C - - 16 Inverse diode forward voltage VSD V VGS = 0 V, IF = 8 A - 1.1 1.2 Reverse recovery time trr ns VR = 100 V, IF=lS, diF/dt = 100 A/µs - 350 - Reverse recovery charge Qrr µC VR = 100 V, IF=lS, diF/dt = 100 A/µs - 3 - Semiconductor Group 4 07/96,

Power dissipation Drain current P = ƒ(T ) ItotCD= ƒ(TC)

parameter: VGS ≥ 10 V 80 4.5

A W

P I tot D 3.5 3.0 2.5 2.0 1.5 20 1.0 10 0.5 0 0.0 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160 T TC C

Safe operating area Transient thermal impedance ID = ƒ(VDS) Zth JC = ƒ(tp)

parameter: D = 0.01, TC = 25°C parameter: D = tp / T 10 2 10 1 K/W

A I

Dtp= 1 8 . 0µsZthJC 10 0 10 1 100 µs 10 -1 1 ms D = 0.50 0.20 10 0 0.10 -2 0.05 10 ms 10 0.02 0.01 single pulse 10 -1 DC 10 -3 10 0 10 1 102V10 3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96RDS( o n ) = VDS/ I D,

Typ. output characteristics Typ. drain-source on-resistance ID = ƒ(VDS) RDS (on) = ƒ(ID)

parameter: tp = 80 µs parameter: VGS9l6.5 Ptot = 75WkjihgfeΩabc

A

VGS [V] 5.5Ia4.0D7dRDS (on) 5.0 b 4.5 c 5.0 4.5 d 5.5 e 6.0 4.05f6.5 3.5cg7.04h7.5 3.0di8.0 2.5ej9.03fgk10.0 2.0hjibl20.0 2 1.5 k 1.0 VGS [V] = 1 a 0.5abcdefghijk4.05 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 0 0.00510 15 20 25 30 35 40 V 50 0.0 1.0 2.0 3.0 4.0 5.0 6.0 A 8.0 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs,

VDS≥2 x ID x RDS(on)max VDS≥2 x ID x RDS(on)max

6.0 5.0AS5.0Ig4.0 D fs 4.5 3.5 4.0 3.5 3.0 3.0 2.5 2.5 2.0 2.0 1.5 1.5 1.0 1.0 0.5 0.5 0.0 0.0012345678V10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 A 5.0VIGS D Semiconductor Group 6 07/96,

Drain-source on-resistance Gate threshold voltage R = ƒ(T ) VGS (th) = ƒ(T )DS (on) j j

parameter: I = 2.8 A, V = 10 V parameter: VGS = VDS, ID = 1 mAD GS 8.0 4.6 V 98% Ω 4.0RVDS (on) GS(th) 3.6 6.0 3.2 typ 5.0 2.8 2.4 4.0 2% 2.0 3.0 98% 1.6 typ 2.0 1.2 0.8 1.0 0.4 0.0 0.0 -60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 160 T Tj j Typ. capacitances Forward characteristics of reverse diode

C = f (VDS) IF = ƒ(VSD)

parameter:VGS = 0V, f = 1MHz parameter: Tj, tp = 80 µs 10 1 10 2 nFACIF 10 0 10 1 Ciss 10 -1 100Coss Tj = 25 °C typ Tj = 150 °C typ C Tj = 25 °C (98%)rss Tj = 150 °C (98%) 10 -2 10 -10510 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0

V

DS VSD Semiconductor Group 7 07/96,

Avalanche energy EAS = ƒ(Tj) Typ. gate charge

parameter: ID = 4.5 A, VDD = 50 V VGS = ƒ(QGate)

RGS = 25 Ω, L = 29 mH parameter: ID puls = 7 A

340 16 mJ

V

E V AS GS 200 0,2 V VDS max 0,8 DS max 80 4 4020020 40 60 80 100 120 °C 160 0 10 20 30 40 nC 60 Tj QGate

Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) V V

(BR)DSS -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07/96, Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96]

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