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BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID BUZ71 50 V < 0.1 Ω 18 A BUZ71FI 50 V < 0.1 Ω 12 A ■ TYPICAL RDS(on) = 0.06 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE 3 32 2 ■ HIGH CURRENT CAPABILITY11o■ 175 C OPERATING TEMPERATURE TO-220 ISOWATT220 APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, INTERNAL SCHEMATIC DIAGRAM ABS, AIR-BAG, LAMPDRIVERS, E...
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BUZ71 BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

TYPE VDSS RDS(on) ID BUZ71 50 V < 0.1 Ω 18 A BUZ71FI 50 V < 0.1 Ω 12 A ■ TYPICAL RDS(on) = 0.06 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE 3 32 2 ■ HIGH CURRENT CAPABILITY11o■ 175 C OPERATING TEMPERATURE TO-220 ISOWATT220

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, INTERNAL SCHEMATIC DIAGRAM ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BUZ71 BUZ71FI VDS Drain-source Voltage (VGS = 0) 50 V VDG R Drain- gate Voltage (RGS = 20 kΩ) 50 V VGS Gate-source Voltage ± 20 V ID Drain Current (cont inuous) at Tc = 25 oC 18 12 A IDM Drain Current (pulsed) 72 72 A Ptot Total Dissipation at T = 25ocC80 35 W VISO Insulat ion Withstand Voltage (DC) 2000 V Tstg Storage Temperature -65 to 175 oC Tj Max. Operat ing Junction Temperature 175 oC DIN Humidity Category (DIN 40040) E IEC Climatic Category (DIN IEC 68-1) 55/150/56 May 1993 1/8,

THERMAL DATA

TO-220 ISOWATT220 Rthj-case Thermal Resistance Junct ion-case Max 1.88 4.29 oC/W Rthj-amb Thermal Resistance Junct ion-ambient Max 62.5 oC/W

AVALANCHE CHARACTERISTICS

Symbol Parameter Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive 18 A (pulse width limited by Tj max, δ < 1%) EAS Single Pulse Avalanche Energy 60 mJ (starting Tj = 25 oC, ID = IAR, VDD = 25 V) EAR Repetitive Avalanche Energy 15 mJ (pulse width limited by Tj max, δ < 1%) IAR Avalanche Current, Repetitive or Not-Repetitive 12 A (Tc = 100 oC, pulse width limited by Tj max, δ < 1%)

ELECTRICAL CHARACTERISTICS (T ocase = 25 C unless otherwise specified) OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source ID = 250 µA VGS = 0 50 V Breakdown Voltage IDSS Zero Gate Voltage VDS = Max Rating 250 µA Drain Current (V = 0) V = Max Rating T = 125 oGS DSjC1000 µA IGSS Gate-body Leakage VGS = ± 20 V ± 100 nA Current (VDS = 0)

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 1 mA 2.134VRDS(on) Static Drain-source On VGS = 10 V ID = 9 A 0.06 0.1 Ω Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗) Forward VDS = 25 V ID = 9A58STransconductance Ciss Input Capacitance VDS = 25Vf= 1 MHz VGS = 0 520 700 pF Coss Output Capacitance 250 350 pF Crss Reverse Transfer 80 120 pF Capacitance

SWITCHING

Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Time VDD = 30 V ID = 3 A 45 65 ns tr Rise Time RGS = 50 Ω VGS = 10 V 65 95 ns td(off ) Turn-off Delay Time 115 160 ns tf Fall Time 80 120 ns 2/8,

ELECTRICAL CHARACTERISTICS (continued) SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 18 A ISD M Source-drain Current 72 A (pulsed) VSD (∗) Forward On Voltage ISD = 36 A VGS = 02Vtrr Reverse Recovery ISD = 18 A di/dt = 100 A/µs 85 ns Time V oDD = 15 V Tj = 150 C Qrr Reverse Recovery 0.13 µC Charge (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area For TO-220 Package Safe Operating Area For ISOWATT220 Package Thermal Impedance For TO-220 Package Thermal Impedance For ISOWATT220 Package

3/8, Derating Curve For TO-220 Package Derating Curve For ISOWATT220 Package Output Characteristics Transfer Characteristics Transconductance Static Drain-Source On Resistance 4/8, Maximum Drain Current vs Temperature Gate Charge vs Gate-Source Voltage Capacitance Variation Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-Drain Diode Forward Characteristics 5/8,

TO-220 MECHANICAL DATA

mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 L2 Dia. L5 L9 L7 L6 L4

P011C

6/8

A C

D1 F2 D F1 F G1

E G

H2,

ISOWATT220 MECHANICAL DATA

mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366Ø33.2 0.118 0.126 L3 L6 L7

Ø

123L2 L4

P011G

7/8

A B H

F1

D

F2

F

G1 E

G

, Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized for use as critical components in life supportdevices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 8/8]
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