Download: GENERAL DESCRIPTION QUICK REFERENCE DATA

GENERAL DESCRIPTION

High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT BUX 86P 87P VCESM Collector-emitter voltage peak value VBE = 0 V - 800 1000 V VCEO Collector-emitter voltage (open base) - 400 450 V VCESAT Collector-emitter saturation voltage IC = 0.2 A; IB = 20 mA - 1 V IC Collector current (DC) - 0.5 A ICM Collector current peak value - 1 A Ptot Total power dissipation Tmb ≤ 25 ˚C - 42 W tf Fall time IC = 0.2 A; IB(on) = 20 mA 0.28 - µs

PINNING - SOT82 PIN CONFIGURATION SYMBOL

PIN DESCRIPTIONc1emitter 2 collectorb3base123e

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BUX 86P 87P VCESM Collector-emitter voltage peak value VBE = 0 V - 800 1000 V VCEO Collector-emitter voltage (open base) - 400 450 V VEBO Emitter-base voltage (open collector) - 5 V IC Collector current (DC) - 0.5 A ICM Collector current (peak value) tp = 2 ms - 1 A IB Base current (DC) - 0.2 A IBM Base current (peak value) - 0.3 A -IBM Reverse base current (peak value) 1 - 0.3 A Ptot Total power dissipation Tmb ≤ 25 ˚C - 42 W Tstg Storage temperature -40 150 ˚C Tj Junction temperature - 150 ˚C 1 Turn-off current. November 1995 1 Rev 1.100,

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-mb Junction to mounting base - 3 K/W Rth j-a Junction to ambient in free air 100 - K/W

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICES VBE = 0 V; VCE = VCESMmax - - 100 µA ICES VBE = 0 V; VCE = VCESMmax; - - 1.0 mA Tj = 125 ˚C IEBO Emitter cut-off current VEB = 5 V; IC = 0 A - - 1 mA VCEsat Collector-emitter saturation voltages IC = 0.1 A; IB = 10 mA - - 0.8 V VCEsat IC = 0.2 A; IB = 20 mA - - 1 V VBEsat Base-emitter saturation voltage IC = 0.2 A; IB = 20 mA - - 1 V hFE DC current gain IC = 50 mA; VCE = 5 V 26 50 125 VCEOsust Collector-emitter sustaining voltage IC = 100 mA; BUX86P 400 - - V IBoff = 0; L = 25 mH BUX87P 450 - - V

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times (resistive load). IC = 0.2 A; IBon = 20 mA; -IBoff = 40 mA; VCC = 250 V ton Turn-on time 0.25 0.5 µs ts Turn-off storage time 2 3.5 µs tf Turn-off fall time 0.28 - µs tf Turn-off fall time Tmb = 95 ˚C - 1.3 µs November 1995 2 Rev 1.100, VCC Zth / (K/W) bux86p R 0.5L 1 0.2

VIM

RB 0.1tp0T.U.T. 0.05 P tDpD= T 0.1 tp 0.02TtTD= 0 0.01 1.0E-06 0.0001 0.011t/ s

Fig.1. Test circuit resistive load. VIM = -6 to +8 V Fig.4. Transient thermal impedance. VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. Zth j-mb = f(t); parameter D = tp/T RB and RL calculated from ICon and IBon requirements.

ICon VBESAT / V BUX86P 90 % 90 % 0.9 IC IC = 0.2 A 10 % 0.8 0.1 A 50 mA ts ton tf toff IBon 0.7

IB

10 % tr 30ns 0.60510 15 20 -IBoff IB / mA

Fig.2. Switching times waveforms with resistive load. Fig.5. Typical base-emitter saturation voltage. VBEsat = f(IB); parameter IC

PD% Normalised Power Derating 120 VCESAT / V BUX86P10 90 8 80 IC = 70 6 50 mA 0.1 A 60 0.2 A 202020 40 60 80 100 120 14000510 15 20 25 30 Tmb / C IB / mA

Fig.3. Normalised power dissipation. Fig.6. Typical collector-emitter saturation voltage. PD% = 100⋅PD/PD 25 ˚C = f (Tmb) VCEsat = f(IB); parameter IC November 1995 3 Rev 1.100

, hFE BUX86P VCE=5V Typical gain IC / A BUX87P Tj=25 C Limit gain 10 = 0.01 ICM max 10 IC max 0.001 0.01 0.1 1 II tp = IC / A 0.1

Fig.7. Typical DC current gain.

hFE = f(IC); parameter VCE. 1 ms

Arrows indicate conditions protected by 100% test.

I 10 ms hFE BUX86P 0.01 VCE=5V Typical gain DC Tj=95 C Limit gain 0.001 10 100 1000 VCE / V 10 Fig.10. Forward bias safe operating area. Tmb = 25 ˚C

I Region of permissible DC operation. II Extension for repetitive pulse operation.

0.001 0.01 0.1 1 NB: Mounted with heatsink compound and IC / A 30 ± 5 newton force on the centre of the

Fig.8. Typical DC current gain. envelope.

hFE = f(IC); parameter VCE hFE BUX86P VCE=5V Typical gain Tj= -40 C Limit gain 0.001 0.01 0.1 1 IC / A

Fig.9. Typical DC current gain.

hFE = f(IC); parameter VCE

November 1995 4 Rev 1.100

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MECHANICAL DATA

Dimensions in mm Net Mass: 0.8 g mounting 2.8 7.8 base 2.3 max 3.75 3.1 2.5 11.1 max 1) 2.54 max 1.2 15.3 min1234.58 0.5 2.29 0.88 1) Lead dimensions within this max zone uncontrolled. Fig.11. SOT82; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT82 envelopes. 2. Epoxy meets UL94 V0 at 1/8". November 1995 5 Rev 1.100,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1995 6 Rev 1.100]

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