Download: BUX48 / BUX48A / BUV48A / BUV48AFI

BUX48/48A ® BUV48A/V48AFI HIGH POWER NPN SILICON TRANSISTORS ■ STMicroelectronics PREFERRED SALESTYPES ■ NPN TRANSISTOR ■ HIGH VOLTAGE CAPABILITY ■ HIGH CURRENT CAPABILITY ■ FAST SWITCHING SPEED1321APPLICATIONS ■ SWITCH MODE POWER SUPPLIES TO-3 TO-218 ■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION 1 The BUX48/A, BUV48A and BUV48AFI are ISOWATT218 silicon Multiepitaxial Mesa NPN transistors mounted respectively in TO-3 metal case, TO-218 INTERNAL SCHEMATIC DIAGRAM plastic package and ISOWATT218 fully isolated package. They are particulary intended for switching and ind...
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BUX48/48A

® BUV48A/V48AFI

HIGH POWER NPN SILICON TRANSISTORS

■ STMicroelectronics PREFERRED

SALESTYPES

■ NPN TRANSISTOR ■ HIGH VOLTAGE CAPABILITY ■ HIGH CURRENT CAPABILITY ■ FAST SWITCHING SPEED1321

APPLICATIONS

■ SWITCH MODE POWER SUPPLIES TO-3 TO-218 ■ FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION 1 The BUX48/A, BUV48A and BUV48AFI are ISOWATT218 silicon Multiepitaxial Mesa NPN transistors mounted respectively in TO-3 metal case, TO-218 INTERNAL SCHEMATIC DIAGRAM plastic package and ISOWATT218 fully isolated package. They are particulary intended for switching and industrial applications from single and tree-phase mains. For TO-3 Package Others Packages ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BUX48 BUX48A BUV48A BUV48AFI VCER Collector-Emitter Voltage (RBE = 10Ω) 850 1000 V VCES Collector-Emitter Voltage (VBE = 0) 850 1000 V VCEO Collector-Emitter Voltage (IB = 0) 400 450 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 15 A ICM Collector Peak Current 30 A ICP Collector Peak Current non repetitive (tp <20µs) 55 A IB Base Current4AIBM Base Peak Current 20 A TO-3 TO-218 ISOWATT218 Ptot Total Dissipation at T = 25ocC175 125 55 W Tstg Storage Temperature -65 to200 -65 to 150 -65 to 150 oC Tj Max. Operating Junction Temperature 200 150 150 oC January 2000 1/7,

THERMAL DATA

TO-3 TO-218 ISOWATT218 Rthj-case Thermal Resistance Junction-case Max112.2 oC/W

ELECTRICAL CHARACTERISTICS (T = 25 ocase C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current VCE = rated VCES 200 µA (VBE = 0) VCE = rated VCES, Tc = 125 oC 2 mA ICER Collector Cut-off Current VCE = rated VCER 500 µA (R oBE = 10 Ω) VCE = rated VCER, Tc = 125C4mA IEBO Emitter Cut-off Current VEB = 5V1mA (IC = 0) VCEO(SUS)∗ Collector-Emitter Sustaining IC = 200 mA L= 25mH Voltage (IB = 0) for BUX48 400 V for BUX48A/V48A/V48AFI 450 V VEBO Emitter-Base Voltage IE = 50 mA 7 30 V (IC = 0) VCE(sat)∗ Collector-Emitter Saturation for BUX48 Voltage IC = 10 A IB = 2 A 1.5 V IC = 15 A IB = 4 A 3.5 V IC = 15 A IB = 3A5Vfor BUX48A/V48A/V48AFI IC = 8 A IB = 1.6 A 1.5 V IC = 12 A IB = 2.4A5VVBE(sat)∗ Base-Emitter Saturation for BUX48 Voltage IC = 10 A IB = 2 A 1.6 V for BUX48A/V48A/V48AFI IC = 8 A IB = 1.6 A 1.6 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %

RESISTIVE SWITCHING TIMES

Symbol Parameter Test Conditions Min. Typ. Max. Unit ton Turn-on Time for BUX48 VCC = 150 V IC = 10 A IB1 = 2A1µs for BUX48A/V48A/V48AFI VCC = 150 V IC = 8 A IB1 = 1.6A1µs ts Storage Time for BUX48 VCC = 150 V IC = 10 A IB1 = - IB2 = 2A3µs for BUX48A/V48A/V48AFI VCC = 150 V IC = 8 A IB1 = - IB2 = 1.6A3µs tf Fall Time for BUX48 VCC = 150 V IC = 10 A IB1 = - IB2 = 2 A 0.8 µs for BUX48A/V48A/V48AFI VCC = 150 V IC = 8 A IB1 = - IB2 = 1.6 A 0.8 µs 2/7,

INDUCTIVE SWITCHING TIMES

Symbol Parameter Test Conditions Min. Typ. Max. Unit ts Storage Time for BUX48 VCC = 300 V IC = 10 A LB = 3 µH VBE = -5 V IB1 = 2 A 2.7 µs oC 5 µs for BUX48A/V48A/V48AFI VCC = 300 V IC = 8 A VBE = -5 V IB1 = 1.6A3µs oC 5 µs tf Fall Time for BUX48 VCC = 300 V IC = 10 A VBE = -5 V IB1 = 2 A 0.16 µs oC 0.4 µs for BUX48A/V48A/V48AFI VCC = 300 V IC = 8 A VBE = -5 V IB1 = 1.6 A 0.13 µs same conditions at Tc = 125 oC 0.4 µs 3/7,

TO-3 MECHANICAL DATA

mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 0.97 1.15 0.038 0.045 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193PADGC

R P003F

4/7

U V N O B E

,

TO-218 (SOT-93) MECHANICAL DATA

mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 – 16.2 – 0.637 L3 18 0.708 L5 3.95 4.15 0.155 0.163 L6 31 1.220 R – 12.2 – 0.480Ø44.1 0.157 0.161 L5 L6 L3 L2 ¯ R123P025A 5/7HA

C D

F E

G

,

ISOWATT218 MECHANICAL DATA

DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 5.35 5.65 0.211 0.222 C 3.30 3.80 0.130 0.150 D 2.90 3.10 0.114 0.122 D1 1.88 2.08 0.074 0.082 E 0.75 0.95 0.030 0.037 F 1.05 1.25 0.041 0.049 F2 1.50 1.70 0.059 0.067 F3 1.90 2.10 0.075 0.083 G 10.80 11.20 0.425 0.441 H 15.80 16.20 0.622 0.638L90.354 L1 20.80 21.20 0.819 0.835 L2 19.10 19.90 0.752 0.783 L3 22.80 23.60 0.898 0.929 L4 40.50 42.50 1.594 1.673 L5 4.85 5.25 0.191 0.207 L6 20.25 20.75 0.797 0.817 N 2.1 2.3 0.083 0.091 R 4.6 0.181 DIA 3.5 3.7 0.138 0.146 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm P025C/A 6/7, Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 7/7]
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