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GENERAL DESCRIPTION High-voltage, monolithic npn power Darlington transistor in a SOT199 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 650 V VCEO Collector-emitter voltage (open base) - 400 V IC Collector current (DC) - 12 A ICM Collector current peak value - 30 A Ptot Total power dissipation Ths ≤ 25 ˚C - 34 W VCEsat Collector-emitter saturation voltage IC = 5 A; IB = 0.05 A - 1.5 V VCEsat Collector-emitter saturation volt...
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GENERAL DESCRIPTION

High-voltage, monolithic npn power Darlington transistor in a SOT199 envelope intended for use in car ignition systems, DC and AC motor controls, solenoid drivers, etc.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 650 V VCEO Collector-emitter voltage (open base) - 400 V IC Collector current (DC) - 12 A ICM Collector current peak value - 30 A Ptot Total power dissipation Ths ≤ 25 ˚C - 34 W VCEsat Collector-emitter saturation voltage IC = 5 A; IB = 0.05 A - 1.5 V VCEsat Collector-emitter saturation voltage IC = 10 A; IB = 0.3 A - 2 V ICsat Collector saturation current 10 A tf Fall time IC = 5 A; IB(on) = 50 mA 0.7 - µs tf Fall time IC = 10 A; IB(on) = 300 mA 1 - µs

PINNING - SOT199 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION casec1baseb2collector 3 emitter R1 R2 case isolated123e

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 650 V VCEO Collector-emitter voltage (open base) - 400 V E(BR) Turn-off breakdown energy with IC = 10 A; IB(on) = 0.3 A; LC = 8 mH - 400 mJ inductive load IC Collector current (DC) - 12 A ICM Collector current peak value - 30 A IB Base current (DC) - 4 A IBM Base current peak value - 6 A Ptot Total power dissipation Ths ≤ 25 ˚C - 34 W Tstg Storage temperature -65 150 ˚C Tj Junction temperature - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-hs Junction to heatsink without heatsink compound - 3.7 K/W Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W June 1993 1 Rev 1.000,

ISOLATION

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Visol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - - 2500 V three terminals to external Cisol Capacitance from T2 to external f = 1 MHz - 22 - pF

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICES Collector cut-off current 1 VBE = 0 V; VCE = VCESMmax - - 1.0 mA ICES VBE = 0 V; VCE = VCESMmax; - - 3.0 mA Tj = 125 ˚C IEBO Emitter cut-off current VEB = 6 V; IC = 0 A - - 20 mA R1 Base-emitter resistor - driver - 500 - Ω R2 Base-emitter resistor - output - 500 - Ω VF Diode forward voltage IF = 8 A; IB = 0 A - - 3 V VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 400 - - V L = 25 mH VCEsat Saturation voltages IC = 5 A; IB = 0.05 A - - 1.5 V VBEsat - - 2.0 V VCEsat IC = 6 A; IB = 0.1 A; - - 1.5 V VBEsat Ths = 150 ˚C - - 2.0 V VCEsat IC = 10 A; IB = 0.3 A - - 2.0 V VBEsat - - 2.5 V

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Switching times inductive load tf Turn-off fall time IC = 5 A; IB(on) = 50 mA - 0.7 - µs tf Turn-off fall time IC = 10 A; IB(on) = 300 mA - 1 - µs 1 Measured with half sine-wave voltage (curve tracer). June 1993 2 Rev 1.000, VCC IC / A ICMmax ICmax LC 10 (1) IBon LB II T.U.T. -VBB

I

0.1 (2) Fig.1. Test circuit inductive load. VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH 0.01 ICon 90 % III 0.001 1 10 100 1000 IC VCE / V Fig.4. Forward bias safe operating area. Ths = 25 ˚C 10 % I Region of permissible DC operation. ts tf t II Extension for repetitive pulse operation. toff III Repetitive pulse operation is permissible in this region provided VBE < 0 and IB IBon tp < 5 ms. (1) Ptot max line. t (2) Second breakdown limits (independent of temperature. -IBoff NB: Mounted without heatsink compound and Fig.2. Switching times waveforms with inductive load. 30 ± 5 newton force on the centre of the envelope. +25 V 1.5 8 mH VZ=400 V IBon T.U.T. off Fig.3. Breakdown energy test circuit. June 1993 3 Rev 1.000, MECHANICAL DATA Dimensions in mm 15.3 max 5.2 max Net Mass: 5.5 g 0.7 3.1 7.3 3.3 3.2 o 6.2 45 5.8 21.5 max seating plane 3.5 3.5 maxnot tinned 15.7 min1232.1 max 1.2 0.7 max 1.0 0.4 M 2.0 5.45 5.45 Fig.5. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Accessories supplied on request: refer to mounting instructions for F-pack envelopes. June 1993 4 Rev 1.000,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1994 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. June 1993 5 Rev 1.000]
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