Download: GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL

GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 850 V VCEO Collector-emitter voltage (open base) - 400 V IC Collector current (DC) - 5 A ICM Collector current peak value - 10 A Ptot Total power dissipation Tmb ≤ 25 ˚C - 100 W VCEsat Collector-emitter saturation voltage IC = 3.0 A; IB = 0.3 A - 2.0 V tf Inductive fall time ICon = 3.0 A;...
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GENERAL DESCRIPTION

Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 850 V VCEO Collector-emitter voltage (open base) - 400 V IC Collector current (DC) - 5 A ICM Collector current peak value - 10 A Ptot Total power dissipation Tmb ≤ 25 ˚C - 100 W VCEsat Collector-emitter saturation voltage IC = 3.0 A; IB = 0.3 A - 2.0 V tf Inductive fall time ICon = 3.0 A; IBon = 0.3 A - 0.1 µs

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PIN DESCRIPTION tabc1base 2 collectorb3emitter tab collector123e

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 850 V VCEO Collector-emitter voltage (open base) - 400 V IC Collector current (DC) - 5 A ICM Collector current peak value - 10 A IB Base current (DC) - 2 A IBM Base current peak value - 4 A Ptot Total power dissipation Tmb ≤ 25 ˚C - 100 W Tstg Storage temperature -65 150 ˚C Tj Junction temperature - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-mb Junction to mounting base - 1.25 K/W Rth j-a Junction to ambient in free air - 60 K/W May 1992 1 Rev 1.000,

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICES Collector cut-off current 1 VBE = 0 V; VCE = VCESMmax - - 1.0 mA ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA Tj = 125 ˚C IEBO Emitter cut-off current VEB = 9.0 V; IC = 0 A - - 10.0 mA VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 400 - - V L = 25 mH VCEsat Collector-emitter saturation voltage IC = 3.0 A; IB = 0.3 A - 0.8 2.0 V VBEsat Base-emitter saturation voltage IC = 4.0 A; IB = 0.6 A - - 1.3 V hFE DC current gain IC = 1.0 A; VCE = 2 V 13 23 30 hFE IC = 4.0 A; VCE = 2V610.5 - hFE IC = 3.0 A; VCE = 2 V 10 13 -

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times resistive load ICon = 3.0 A; IBon = 0.3 A; -IBoff = 0.6 A ts Turn-off storage time 1.5 2.0 µs tf Turn-off fall time 0.5 0.8 µs Switching times inductive load ICon = 3.0 A; IBon = 0.3 A; LB = 1 µH; -VBB = 5 V ts Turn-off storage time 1.0 1.2 µs tf Turn-off fall time 60 100 ns ICon = 3.0 A; IBon = 0.3 A; LB = 1 µH; -VBB = 5 V; Tj = 100 ˚C ts Turn-off storage time 1.1 1.4 µs tf Turn-off fall time 120 250 ns IC / mA + 50v 100-200R Horizontal 200 Oscilloscope Vertical 100 300R 1R 6V VCE / V min 30-60 Hz VCEOsust Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust. 1 Measured with half sine-wave voltage (curve tracer). May 1992 2 Rev 1.000, VCC ICon 90 %

IC RL VIM

R 10 %B 0 T.U.T. ts tf t toff tp IB IBon

T

t -IBoff Fig.3. Test circuit resistive load. VIM = -6 to +8 V Fig.6. Switching times waveforms with inductive load. VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. ICon PD% Normalised Power Derating 90 % 90 % 120 IC 90 10 % 80 ts ton tf 60 toff 50 IBon 40 IB 30 10 % 20 tr 30ns 10 0 20 40 60 80 100 120 140 -IBoff Tmb / C Fig.4. Switching times waveforms with resistive load. Fig.7. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb) VCC Zth / (K/W) LC D= 0.5 0.2 0.1 IBon LB 0.1 0.05 t tP pp 0.02DD= T T.U.T. 0 -VBBTt0.01 1E-06 1E-04 1E-02 1E+00 t / s Fig.5. Test circuit inductive load. Fig.8. Transient thermal impedance. VCC = 300 V; -VBE = 5 V;LB = 1 uH Zth j-mb = f(t); parameter D = tp/T May 1992 3 Rev 1.000, VBEsat / V VCEsat / V 1.2 10 1.1 Tj = 25 C Tj = 25 C Tj = 125 C Tj = 125 C 0.9 5A 0.8 1 0.7 3AIC/IB= 0.6 8 10 IC=2A 0.5 12 0.4 0.1 0.1 1 10 0.1 1 10 IC / A IB / A Fig.9. Typical base-emitter saturation voltage. Fig.12. Typical collector-emitter saturation voltage. VBEsat = f(IC); parameter IC/IB VCEsat = f(IB); parameter IC VCEsat / V h FE 1 100 0.9 5V 0.8 IC/IB= 0.7 0.6 8 1V 0.5 10 0.4 Tj = 25 C 0.3 Tj = 125 C Tj = 25 C 0.2 Tj = 125 C 0.1010.1 1 10 0.01 0.1 1 10 IC / A IC / A Fig.10. Typical collector-emitter saturation voltage. Fig.13. Typical DC current gain. hFE = f(IC) VCEsat = f(IC); parameter IC/IB parameter VCE VBEsat / V 1.2 Tj = 25 C 1.1 Tj = 125 C 0.9 IC = 0.8 5A 3A 0.7 2A 0.6 0 0.4 0.8 1.2 1.6 2 2.4 IB / A Fig.11. Typical base-emitter saturation voltage. VBEsat = f(IB); parameter IC May 1992 4 Rev 1.000, IC / A IC / A = 0.01 ICMmax tp = 3 10 us 2 ICmax 1 100 us10200 400 600 800 1000500 us VCE / V II Fig.15. Reverse bias safe operating area. Tj ≤ Tj maxI2ms 0.1 VCC 10 ms

DC LC

0.01 1 10 100 1000 VCL VCE / V IBon LB Fig.14. Forward bias safe operating area. Tmb = 25˚C -VBB T.U.T. I Region of permissible DC operation. II Extension for repetitive pulse operation. NB: Mounted with heatsink compound and 30 ± 5 newton force on the centre of the Fig.16. Test circuit RBSOAR. VCC = 150 V; -VBB = 5 V envelope. LC = 200 µH; VCL ≤ 850 V; LB = 1 µH May 1992 5 Rev 1.000, MECHANICAL DATA Dimensions in mm 4,5 Net Mass: 2 g max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max123(2x) 0,9 max (3x) 0,6 2,54 2,54 2,4 Fig.17. TO220AB; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". May 1992 6 Rev 1.000,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1992 7 Rev 1.000]
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