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GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V VCEO Collector-emitter voltage (open base) - 450 V IC Collector current (DC) - 5 A ICM Collector current peak value - 10 A Ptot Total power dissipation Ths ≤ 25 ˚C - 32 W VCEsat Collector-emitter saturation voltage - 1.5 V ICsat Collector saturation current 2.5 - A ...
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GENERAL DESCRIPTION

High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in converters, inverters, switching regulators, motor control systems, etc.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V VCEO Collector-emitter voltage (open base) - 450 V IC Collector current (DC) - 5 A ICM Collector current peak value - 10 A Ptot Total power dissipation Ths ≤ 25 ˚C - 32 W VCEsat Collector-emitter saturation voltage - 1.5 V ICsat Collector saturation current 2.5 - A tf Fall time 150 - ns

PINNING - SOT186A PIN CONFIGURATION SYMBOL

PIN DESCRIPTION casec1base 2 collectorb3emitter case isolated123e

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V VCEO Collector-emitter voltage (open base) - 450 V IC Collector current (DC) - 5 A ICM Collector current peak value - 10 A IB Base current (DC) - 2 A IBM Base current peak value - 4 A Ptot Total power dissipation Ths ≤ 25 ˚C - 32 W Tstg Storage temperature -65 150 ˚C Tj Junction temperature - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-hs Junction to heatsink with heatsink compound - 3.95 K/W Rth j-a Junction to ambient in free air 55 - K/W November 1995 1 Rev 1.100,

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V three terminals to external waveform; heatsink R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz - 10 - pF heatsink

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I Collector cut-off current 1CES VBE = 0 V; VCE = VCESMmax - - 1.0 mA ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA Tj = 125 ˚C IEBO Emitter cut-off current VEB = 9 V; IC = 0 A - - 10 mA VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 450 - - V L = 25 mH VCEsat Collector-emitter saturation voltages IC = 2.5 A; IB = 0.5 A - - 1.5 V VBEsat Base-emitter saturation voltage IC = 2.5 A; IB = 0.5 A - - 1.3 V hFE DC current gain IC = 5 mA; VCE = 5 V 10 18 35 hFE IC = 500 mA; VCE = 5 V 10 20 35

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times (resistive load) ICon = 2.5 A; IBon = -IBoff = 0.5 A ton Turn-on time 0.6 - µs ts Turn-off storage time 3.5 - µs tf Turn-off fall time 0.6 - µs Switching times (inductive load) ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH; -VBB = 5 V ts Turn-off storage time 1.5 - µs tf Turn-off fall time 150 - ns Switching times (inductive load) ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH; -VBB = 5 V; Tj = 100 ˚C ts Turn-off storage time 1.8 - µs tf Turn-off fall time 170 - ns 1 Measured with half sine-wave voltage (curve tracer). November 1995 2 Rev 1.100, ICon 90 % + 50v 90 % 100-200R

IC

10 % ts Horizontal ton tf toff Oscilloscope IBon

IB

Vertical 10 % 300R 1R tr 30ns 6V 30-60 Hz -IBoff Fig.1. Test circuit for VCEOsust. Fig.4. Switching times waveforms with resistive load. IC / mA VCC 250 LC IBon LB T.U.T. -VBB VCE / V min VCEOsust Fig.2. Oscilloscope display for VCEOsust. Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH VCC ICon 90 %

IC RL VIM

R 10 %B 0 T.U.T. ts tf t toff tp IB IBon

T

t -IBoff Fig.3. Test circuit resistive load. VIM = -6 to +8 V Fig.6. Switching times waveforms with inductive load. VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. November 1995 3 Rev 1.100, % Normalised Derating 120 IC / A with heatsink compound 100 70 ICM max = 0.01 60 P 10 tot 50 IC max tp = 40 10 us 30 II 20 100 us 10 (1)1 0 20 40 60 80 100 120 140 Ths / C 1 ms Fig.7. Normalised power derating and second breakdown curves. 10 msI (2) 0.1 500 ms

DC

IC / A BUT11AX 6 III 5 0.01 1 10 100 1000 4 VC E / V Fig.10. Forward bias safe operating area. Ths ≤ 25 ˚C (1) Ptot max and Ptot peak max lines. 2 (2) Second breakdown limits. I Region of permissible DC operation. 1 II Extension for repetitive pulse operation. III Extension during turn-on in single 0 transistor converters provided that 0 400 800 1200 VCE / V RBE ≤ 100 Ω and tp ≤ 0.6 µs. Fig.8. Reverse bias safe operating area. T ≤ T NB: Mounted with heatsink compound andj j max 30 ± 5 newton force on the centre of the envelope. hFE BUT11AX 5V 1V 0.01 0.1 1 10 100 IC / A Fig.9. Typical DC current gain. hFE = f(IC); parameter VCE November 1995 4 Rev 1.100, Fig.11. Typical base-emitter and collector-emitter saturation voltages. VBEsat = f(IC); VCEsat = f(IC); IC/IB = 5 Fig.12. Collector-emitter saturation voltage. Solid lines = typ values, dotted lines = max values. VCEsat = f(IB); parameter IC November 1995 5 Rev 1.100, Fig.13. Typical base-emitter saturation voltage. VBEsat = f(IB); parameter IC Fig.14. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T November 1995 6 Rev 1.100,

MECHANICAL DATA

Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 3.0 2.9 max Recesses (2x) 2.8 2.5 6.4 0.8 max. depth 15.8 15.8 19 seating max max. max. plane 3 max. not tinned 2.5 13.5 min. 1230.4 M 1.0 (2x) 0.6 2.54 0.90.5 0.7 5.08 2.5 1.3 Fig.15. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". November 1995 7 Rev 1.100,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1995 8 Rev 1.100]
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