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GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control systems etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V VCEO Collector-emitter voltage (open base) - 450 V IC Collector current (DC) - 5 A ICM Collector current peak value - 10 A Ptot Total power dissipation Tmb ≤ 25 ˚C - 100 W VCEsat Collector-emitter saturation voltage IC = 2....
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GENERAL DESCRIPTION

Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control systems etc.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V VCEO Collector-emitter voltage (open base) - 450 V IC Collector current (DC) - 5 A ICM Collector current peak value - 10 A Ptot Total power dissipation Tmb ≤ 25 ˚C - 100 W VCEsat Collector-emitter saturation voltage IC = 2.5 A; IB = 0.33 A - 1.5 V ICsat Collector Saturation current 2.5 A tf Inductive fall time ICon = 2.5 A; IBon = 0.5 A 0.08 0.15 µs

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PIN DESCRIPTION tabc1base 2 collectorb3emitter tab collector123e

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V VCEO Collector-emitter voltage (open base) - 450 V IC Collector current (DC) - 5 A ICM Collector current peak value - 10 A IB Base current (DC) - 2 A IBM Base current peak value - 4 A Ptot Total power dissipation Tmb ≤ 25 ˚C - 100 W Tstg Storage temperature -65 150 ˚C Tj Junction temperature - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Rth j-mb Junction to mounting base - 1.25 K/W Rth j-a Junction to ambient in free air - 60 K/W April 2002 1 Rev 2.000,

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICES Collector cut-off current 1 VBE = 0 V; VCE = VCESMmax - - 1.0 mA ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA Tj = 125 ˚C IEBO Emitter cut-off current VEB = 9.0 V; IC = 0 A - - 10.0 mA VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 450 - - V L = 25 mH VCEsat Collector-emitter saturation voltage IC = 2.5 A;IB = 0.33 A - - 1.5 V VBEsat Base-emitter saturation voltage IC = 2.5 A;IB = 0.33 A - - 1.3 V hFE DC current gain IC = 5 mA; VCE = 5 V 10 20 35 hFE IC = 0.5 A; VCE = 5 V 14 22 35 hFEsat IC = 2.5 A; VCE = 5V913 17

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times resistive load ICon = 2.5 A; IBon = 0.5 A; -IBoff = 0.5 A ton Turn-on time 0.6 1.0 µs ts Turn-off storage time 3.4 4.0 µs tf Turn-off fall time 0.6 0.8 µs Switching times inductive load ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH; -VBB = 5 V ts Turn-off storage time 1.1 1.4 µs tf Turn-off fall time 80 150 ns ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH; -VBB = 5 V; Tj = 100 ˚C ts Turn-off storage time 1.2 1.5 µs tf Turn-off fall time 140 300 ns IC / mA + 50v 100-200R Horizontal 200 Oscilloscope Vertical 100 300R 1R 6V VCE / V min 30-60 Hz VCEOsust Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust. 1 Measured with half sine-wave voltage (curve tracer). April 2002 2 Rev 2.000, VCC ICon 90 %

IC RL VIM

R 10 %B 0 T.U.T. ts tf t toff tp IB IBon

T

t -IBoff Fig.3. Test circuit resistive load. VIM = -6 to +8 V Fig.6. Switching times waveforms with inductive load. VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. % Normalised Derating ICon 120 90 % with heatsink compound90 % 110

IC

10 % 70 ts 60 P tot ton tf 50 toff 40 IBon 30

IB

10 % 10 tr 30ns0020 40 60 80 100 120 140 Ths / C -IBoff Fig.7. Normalised power derating and second Fig.4. Switching times waveforms with resistive load. breakdown curves. VCC IC / A BUT11AX6

LC

IBon 2 LB T.U.T. 1 -VBB 0 400 800 1200 VCE / V Fig.5. Test circuit inductive load. Fig.8. Reverse bias safe operating area. Tj ≤ Tj max VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH April 2002 3 Rev 2.000, hFE BUT11AX Zth / (K/W) 100 10 5V 1V 1 10 D= 0.5 0.2 0.1 0.1 0.05 t tP pp 0.02DD= T100.01 0.1 1 10 100 IC / A t Fig.9. Typical DC current gain. T hFE = f(IC); parameter VCE 0.01 1E-06 1E-04 1E-02 1E+00 t / s IC / A Fig.11. Transient thermal impedance. 100 Zth j-hs = f(t); parameter D = tp/T ICM max = 0.01 IC max tp = 10 us

II

100 us (1) 1 ms 10 ms

I

(2) 0.1 500 ms

DC III

0.01 1 10 100 1000 VC E / V Fig.10. Forward bias safe operating area. Ths ≤ 25 ˚C (1) Ptot max and Ptot peak max lines. (2) Second breakdown limits. I Region of permissible DC operation. II Extension for repetitive pulse operation. III Extension during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 µs. NB: Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope. April 2002 4 Rev 2.000, MECHANICAL DATA Dimensions in mm 4,5 Net Mass: 2 g max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max123(2x) 0,9 max (3x) 0,6 2,54 2,54 2,4 Fig.12. TO220AB; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". April 2002 5 Rev 2.000,

DEFINITIONS

DATA SHEET STATUS DATA SHEET PRODUCT DEFINITIONS STATUS2 STATUS3 Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2 Please consult the most recently issued datasheet before initiating or completing a design. 3 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. April 2002 6 Rev 2.000]
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