Download: DISCRETE SEMICONDUCTORS DATA SHEET BZV90 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of November 1993 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 BZV90 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of November 1993 File under Discrete Semiconductors, SC01 FEATURES PINNING • Total power dissipation: PIN DESCRIPTION max. 1500 mW 1 anode • Tolerance series: ±5% 2 cathode • Working voltage range: 3 anode nom. 2.4 to 75 V (E24 range) 4 cathode • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage 4 APPLICATIONS • General regulation functions. 1 3 DESCRIPTION Medium-power voltage regulator diodes in plastic SMD SOT223 2, 4...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage M3D087

BZV90 series Voltage regulator diodes

Product specification 1996 Apr 26 Supersedes data of November 1993 File under Discrete Semiconductors, SC01, FEATURES PINNING • Total power dissipation: PIN DESCRIPTION max. 1500 mW 1 anode • Tolerance series: ±5% 2 cathode • Working voltage range: 3 anode nom. 2.4 to 75 V (E24 range) 4 cathode • Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage 4

APPLICATIONS

• General regulation functions. 1 3

DESCRIPTION

Medium-power voltage regulator diodes in plastic SMD SOT223 2, 4 packages. 123The diodes are available in the normalized E24 ±5% tolerance range. Top view MAM242 The series consists of 37 types with nominal working voltages from Fig.1 Simplified outline (SOT223) and symbol. 2.4 to 75 V (BZV90-C2V4 to C75). LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF continuous forward current − 400 mA IZSM non-repetitive peak reverse current tp = 100 µs; square wave; see Table Tj = 25 °C prior to surge “Per type” Ptot total power dissipation Tamb = 25 °C; note 1 − 1500 mW PZSM non-repetitive peak reverse power tp = 100 µs; square wave; − 40 W dissipation Tj = 25 °C prior to surge; see Fig.2 Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Note 1. Device mounted on an FR4 double-sided copper-clad printed circuit-board; copper area = 2 cm2. ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage IF = 50 mA; see Fig.3 − 1.0 V 1996 Apr 26 2, 1996 Apr 26 3 Per type Tj = 25 °C; unless otherwise specified. WORKING DIFFERENTIAL TEMP. COEFF. TEST DIODE CAP. REVERSE NON-REPETITIVE PEAK VOLTAGE RESISTANCE SZ (mV/K) CURRENT Cd (pF) CURRENT at REVERSE CURRENT VZ (V) rdif (Ω) at IZtest IZtest (mA) at f = 1 MHz; REVERSE I (A)BZV90- ZSM at IZtest at IZtest see Figs 4 and 5 at VR = 0 V VOLTAGE at tp = 100 µs;CXXXµT= 25 °CIR ( A) ambVR MIN. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. (V) MAX. 2V4 2.2 2.6 70 100 −3.5 −1.605450 50 1.0 6.0 2V7 2.5 2.9 75 100 −3.5 −2.005450 20 1.0 6.0 3V0 2.8 3.2 80 95 −3.5 −2.105450 10 1.0 6.0 3V3 3.1 3.5 85 95 −3.5 −2.405450 5 1.0 6.0 3V6 3.4 3.8 85 90 −3.5 −2.405450 5 1.0 6.0 3V9 3.7 4.1 85 90 −3.5 −2.505450 3 1.0 6.0 4V3 4.0 4.6 80 90 −3.5 −2.505450 3 1.0 6.0 4V7 4.4 5.0 50 80 −3.5 −1.4 0.2 5 180 3 2.0 6.0 5V1 4.8 5.4 40 60 −2.7 −0.8 1.2 5 160 2 2.0 6.0 5V6 5.2 6.0 15 40 −2.0 1.2 2.5 5 140 1 2.0 6.0 6V2 5.8 6.6 6 10 0.4 2.3 3.7 5 130 3 4.0 6.0 6V8 6.4 7.2 6 15 1.2 3.0 4.5 5 110 2 4.0 6.0 7V5 7.0 7.9 6 15 2.5 4.0 5.3 5 100 1 5.0 4.0 8V2 7.7 8.7 6 15 3.2 4.6 6.2 5 95 0.7 5.0 4.0 9V1 8.5 9.6 6 15 3.8 5.5 7.0 5 90 0.5 6.0 3.0 10 9.4 10.6 8 20 4.5 6.4 8.0 5 90 0.2 7.0 3.0 11 10.4 11.6 10 20 5.4 7.4 9.0 5 85 0.1 8.0 2.5 12 11.4 12.7 10 25 6.0 8.4 10.0 5 85 0.1 8.0 2.5 13 12.4 14.1 10 30 7.0 9.4 11.0 5 80 0.1 8.0 2.5 15 13.8 15.6 10 30 9.2 11.4 13.0 5 75 0.05 10.5 2.0 16 15.3 17.1 10 40 10.4 12.4 14.0 5 75 0.05 11.2 1.5 18 16.8 19.1 10 45 12.4 14.4 16.0 5 70 0.05 12.6 1.5 20 18.8 21.2 15 55 14.4 16.4 18.0 5 60 0.05 14.0 1.5, 1996 Apr 26 4 WORKING DIFFERENTIAL TEMP. COEFF. TEST DIODE CAP. REVERSE NON-REPETITIVE PEAK VOLTAGE RESISTANCE SZ (mV/K) CURRENT Cd (pF) CURRENT at REVERSE CURRENT VZ (V) r (Ω) atII(mA) at f = 1 MHz; REVERSE IBZV90- dif Ztest Ztest ZSM (A) at IZtest at IZtest see Figs 4 and 5 at VCXXX R = 0 V VOLTAGE at tp = 100 µs;

T

I (µA) amb = 25 °CR VR MIN. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. (V) MAX. 22 20.8 23.3 20 55 16.4 18.4 20.0 5 60 0.05 15.4 1.25 24 22.8 25.6 25 70 18.4 20.4 22.0 5 55 0.05 16.8 1.25 27 25.0 28.9 25 80 21.4 23.4 25.3 2 50 0.05 18.9 1.0 30 28.0 32.0 30 80 24.4 26.6 29.4 2 50 0.05 21.0 1.0 33 31.0 35.0 35 80 27.4 29.7 33.4 2 45 0.05 23.1 0.9 36 34.0 38.0 35 90 30.4 33.0 37.4 2 45 0.05 25.2 0.8 39 37.0 41.0 40 130 33.4 36.4 41.2 2 45 0.05 27.3 0.7 43 40.0 46.0 45 150 37.6 41.2 46.6 2 40 0.05 30.1 0.6 47 44.0 50.0 50 170 42.0 46.1 51.8 2 40 0.05 32.9 0.5 51 48.0 54.0 60 180 46.6 51.0 57.2 2 40 0.05 35.7 0.4 56 52.0 60.0 70 200 52.2 57.0 63.8 2 40 0.05 39.2 0.3 62 58.0 66.0 80 215 58.8 64.4 71.6 2 35 0.05 43.4 0.3 68 64.0 72.0 90 240 65.6 71.7 79.8 2 35 0.05 47.6 0.25 75 70.0 79.0 95 255 73.4 80.2 88.6 2 35 0.05 52.5 0.2, THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient lead length max.; note 1 83.3 K/W Note 1. Device mounted on an FR4 double-sided copper-clad printed circuit-board; copper area = 2 cm2. 1996 Apr 26 5, GRAPHICAL DATA MBG801 MBG781 103 300 handbook, halfpage handbook, halfpage P IZSM F (W) (mA) 102 200 (1) 10 100 (2) 1 0 10−1 1 duration (ms) 10 0.6 0.8 VF (V) 1.0 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Tj = 25 °C. Fig.2 Maximum permissible non-repetitive peak reverse power Fig.3 Forward current as a function of forward dissipation versus duration. voltage; typical values. MBG927 handbook, full pagewidth SZ 4V3 (mV/K) 3V9 0 3V6 3V3 −1 3V0 −2 2V7 2V4 −3 10-3 10-2 10-1 I (A) 1Z BZV90-C2V4 to C4V3. Tj = 25 to 150 °C. Fig.4 Temperature coefficient as a function of working current; typical values. 1996 Apr 26 6, MBG924 handbook, halfpage

SZ

(mV/K) 9V1 8V2 7V5 6V8 6V2 5V6 5V1 4V7 −504812 16 20 IZ (mA) BZV90-C4V7 to C10. Tj = 25 to 150 °C. Fig.5 Temperature coefficient as a function of working current; typical values. 1996 Apr 26 7,

PACKAGE OUTLINE

handbook, full pagewidth 0.95 0.85 S seating plane 0.1 S 0.32 0.24 6.7 6.3 3.1 B 0.2MA2.9

A

0.10 0.01 3.7 7.3 3.3 6.7 16o max 16o12310o 1.80 0.80 max 2.3 M0.60 0.1 B max (4x) MSA035 - 1 4.6 Dimensions in mm.

Fig.6 SOT223.

1996 Apr 26 8,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Apr 26 9]
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