Download: DISCRETE SEMICONDUCTORS DATA SHEET BZV85 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D130 BZV85 series Voltage regulator diodes Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Total power dissipation: Medium-power voltage regulator diodes in hermetically sealed leaded glass max. 1.3 W SOD66 (DO-41) packages. The diodes are available in the normalized E24 • Tolerance series: ±5% ±5% tolerance range. The series consists of 33 types with nominal working voltages from 3.6 to 75 V (BZV85-C3V6 to BZV85-C75). • Working voltage range: nom. 3.6 to 75 V...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage M3D130

BZV85 series Voltage regulator diodes

Product specification 1996 Apr 26 Supersedes data of April 1992 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION • Total power dissipation: Medium-power voltage regulator diodes in hermetically sealed leaded glass max. 1.3 W SOD66 (DO-41) packages. The diodes are available in the normalized E24 • Tolerance series: ±5% ±5% tolerance range. The series consists of 33 types with nominal working voltages from 3.6 to 75 V (BZV85-C3V6 to BZV85-C75). • Working voltage range: nom. 3.6 to 75 V (E24 range) • Non-repetitive peak reverse power handbook, halfpage dissipation: max. 60 W. k a MAM241

APPLICATIONS

The diodes are type branded. • Stabilization purposes. Fig.1 Simplified outline (SOD66; DO-41) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF continuous forward current − 500 mA IZSM non-repetitive peak reverse current tp = 100 µs; square wave; see Table Tj = 25 °C prior to surge; see Fig.3 “Per type” tp = 10 ms; half sinewave; see Table Tj = 25 °C prior to surge “Per type” Ptot total power dissipation Tamb = 25 °C; lead length 10 mm; − 1.0 W note 1 note 2 − 1.3 W PZSM non-repetitive peak reverse power tp = 100 µs; square wave; − 60 W dissipation Tj = 25 °C prior to surge Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C Notes 1. Device mounted on a printed circuit-board with 1 cm2 copper area per lead. 2. If the leads are kept at Ttp = 55 °C at 4 mm from body. ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage IF = 50 mA; see Fig.4 − 1.0 V 1996 Apr 26 2, 1996 Apr 26 3 Per type Tj = 25 °C; unless otherwise specified. WORKING DIFFERENTIAL TEMP. COEFF. TEST DIODE CAP. REVERSE NON-REPETITIVE VOLTAGE RESISTANCE SZ (mV/K) CURRENT Cd (pF) CURRENT at Ω PEAK REVERSE CURRENTVZ (V) rdif ( ) at IZtest IZtest (mA) at f = 1 MHz; REVERSE I BZV85- at I at I see Figs 5 and6V= 0 V VOLTAGE ZSMZtest Ztest R

CXXX

µ at tp = 100 µs; at tp = 10 ms;IR ( A) VR Tamb = 25 °C Tamb = 25 °C (V) MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. (A) MAX. (mA) 3V6 3.4 3.8 15 −3.5 −1.0 60 450 50 1.0 8.0 2000 3V9 3.7 4.1 15 −3.5 −1.0 60 450 10 1.0 8.0 1950 4V3 4.0 4.6 13 −2.7 0 50 450 5 1.0 8.0 1850 4V7 4.4 5.0 13 −2.0 0.7 45 300 3 1.0 8.0 1800 5V1 4.8 5.4 10 −0.5 2.2 45 300 3 2.0 8.0 1750 5V6 5.2 6.0702.7 45 300 2 2.0 8.0 1700 6V2 5.8 6.6 4 0.6 3.6 35 200 2 3.0 7.0 1620 6V8 6.4 7.2 3.5 1.3 4.3 35 200 2 4.0 7.0 1550 7V5 7.0 7.9 3 2.5 5.5 35 150 1 4.5 5.0 1500 8V2 7.7 8.7 5 3.1 6.1 25 150 0.7 5.0 5.0 1400 9V1 8.5 9.6 5 3.8 7.2 25 150 0.7 6.5 4.0 1340 10 9.4 10.6 8 4.7 8.5 25 90 0.2 7.0 4.0 1200 11 10.4 11.6 10 5.3 9.3 20 85 0.2 7.7 3.0 1100 12 11.4 12.7 10 6.3 10.8 20 85 0.2 8.4 3.0 1000 13 12.4 14.1 10 7.4 12.0 20 80 0.2 9.1 3.0 900 15 13.8 15.6 15 8.9 13.6 15 75 0.05 10.5 2.5 760 16 15.3 17.1 15 10.7 15.4 15 75 0.05 11.0 1.75 700 18 16.8 19.1 20 11.8 17.1 15 70 0.05 12.5 1.75 600 20 18.8 21.2 24 13.6 19.1 10 60 0.05 14.0 1.75 540 22 20.8 23.3 25 16.6 22.1 10 60 0.05 15.5 1.5 500 24 22.8 25.6 30 18.3 24.3 10 55 0.05 17 1.5 450 27 25.1 28.9 40 20.1 27.5 8 50 0.05 19 1.2 400 30 28.0 32.0 45 22.4 32.0 8 50 0.05 21 1.2 380, 1996 Apr 26 4 WORKING DIFFERENTIAL TEMP. COEFF. TEST DIODE CAP. REVERSE NON-REPETITIVE VOLTAGE RESISTANCE SZ (mV/K) CURRENT Cd (pF) CURRENT at Ω PEAK REVERSE CURRENTVZ (V) rdif ( ) at IZtest IZtest (mA) at f = 1 MHz; REVERSE I BZV85- at I ZSMZtest at IZtest see Figs 5 and 6 VR = 0 V VOLTAGE

CXXX

µ at tp = 100 µs; at tp = 10 ms;IR ( A) VR Tamb = 25 °C Tamb = 25 °C (V) MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. (A) MAX. (mA) 33 31.0 35.0 45 24.8 35.0 8 45 0.05 23 1.0 350 36 34.0 38.0 50 27.2 39.9 8 45 0.05 25 0.9 320 39 37.0 41.0 60 29.6 43.0 6 45 0.05 27 0.8 296 43 40.0 46.0 75 34.0 48.3 6 40 0.05 30 0.7 270 47 44.0 50.0 100 37.4 52.5 4 40 0.05 33 0.6 246 51 48.0 54.0 125 40.8 56.5 4 40 0.05 36 0.5 226 56 52.0 60.0 150 46.8 63.0 4 40 0.05 39 0.4 208 62 58.0 66.0 175 52.2 72.5 4 35 0.05 43 0.4 186 68 64.0 72.0 200 60.5 81.0 4 35 0.05 48 0.35 171 75 70.0 80.0 225 66.5 88.0 4 35 0.05 53 0.3 161, THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 4 mm; see Fig.2 110 K/W Rth j-a thermal resistance from junction to ambient lead length10 mm; note 1 175 K/W Note 1. Device mounted on a printed circuit-board with 1 cm2 copper area per lead. 1996 Apr 26 5, GRAPHICAL DATA 3 MBG92910 handbook, full pagewidth Rth j-tp (K/W) δ = 1 0.75 0.50 0.33 0.20 0.10 0.05 0.02tt0.01pTδp=

T

10−2 10−1 1 10 102 103 tp (ms) 10 Fig.2 Thermal resistance from junction to tie-point with a lead length of 4 mm. 2 MBG802 MBG92510 300 handbook, halfpage handbook, halfpage IZSM IF (A) (mA) (1) 10 200 (1) (2) 1 (2) 100 10−10110 V 2Znom (V) 10 0 0.5 V (V) 1.0F (1) t = 10 µs; half sinewave; T = 25 °C. (1) T = 200 °C.p amb j (2) tp = 10 ms; half sinewave; T (2) T = 25 °C. amb = 25 °C. j Fig.3 Non-repetitive peak reverse current as a Fig.4 Forward current as a function of forward function of the nominal working voltage. voltage; typical values. 1996 Apr 26 6, MBG926 MBG800 10 100 handbook, halfpage handbook, halfpage SZ (1) SZ (mV/K) (mV/K) 10 80 (2) 9V1 8V2 7V5 60 (3) 6V8 6V2 5V6 40 5V1 4V7 4V3 20 3V6 3V9 −50025 2IZ (mA) 50 1 10 VZnom (V) 10 BZV85-C3V6 to C10. IZ = IZtest; Tj = 25 to 150 °C. T = 25 to 150 °C. (1) Maximum values.j For types above 7.5 V the temperature coefficient is independent (2) Typical values. of current; see Table “Per type”. (3) Minimum values. Fig.5 Temperature coefficient as a function of Fig.6 Temperature coefficient as a function of working current; typical values. nominal working voltage. 1996 Apr 26 7, PACKAGE OUTLINE k handbook, full pagewidth a 0.81 max 2.6 4.8 28 min 28 min MBC894 max max Dimensions in mm. Fig.7 SOD66 (DO-41).

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Apr 26 8]
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