Download: DISCRETE SEMICONDUCTORS DATA SHEET BZD27 series Voltage regulator diodes Product specification 1996 Jun 10 Supersedes data of October 1991 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D121 BZD27 series Voltage regulator diodes Product specification 1996 Jun 10 Supersedes data of October 1991 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION hermetically sealed and fatigue free as coefficients of expansion of all • Glass passivated Cavity free cylindrical glass SOD87 (1) used parts are matched. • High maximum operating package through Implotec temperature technology. This package is (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability handbook, 4 columnska• Zener working voltag...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage M3D121

BZD27 series Voltage regulator diodes

Product specification 1996 Jun 10 Supersedes data of October 1991 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION hermetically sealed and fatigue free as coefficients of expansion of all • Glass passivated Cavity free cylindrical glass SOD87 (1) used parts are matched. • High maximum operating package through Implotec temperature technology. This package is (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability handbook, 4 columnska• Zener working voltage range: 3.6 to 270 V for 46 types • Transient suppressor stand-off MAM249 voltage range: 6.2 to 430 V for 45 types Fig.1 Simplified outline (SOD87) and symbol. • Supplied in 8 mm embossed tape. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Ptot total power dissipation Ttp = 105 °C; see Figs 2 and 3 BZD27-C3V6 to -C6V8 − 1.7 W BZD27-C7V5 to -C510 − 2.3 W Ptot total power dissipation PCB mounted (see Fig.7) BZD27-C3V6 to -C6V8 Tamb = 60 °C; see Fig.2 − 0.8 W BZD27-C7V5 to -C510 Tamb = 55 °C; see Fig.3 − 0.8 W PZSM non-repetitive peak reverse tp = 100 µs; square pulse; power dissipation Tj = 25 °C prior to surge; see Figs.4 and 5 BZD27-C3V6 to -C6V8 − 300 W BZD27-C7V5 to -C510 − 300 W PRSM non-repetitive peak reverse 10/1000 µs exponential pulse (see Fig.8); power dissipation Tj = 25 °C prior to surge BZD27-C7V5 to -C510 − 150 W Tstg storage temperature BZD27-C3V6 to -C6V8 −65 +200 °C BZD27-C7V5 to -C510 −65 +175 °C Tj junction temperature BZD27-C3V6 to -C6V8 −65 +200 °C BZD27-C7V5 to -C510 −65 +175 °C 1996 Jun 10 2, ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage IF = 0.2 A; see Fig.6 − 1.2 V Per type when used as voltage regulator diodes Tj = 25 °C unless otherwise specified. DIFFERENTIAL TEMPERATURE TEST REVERSE CURRENT TYPE WORKING VOLTAGE RESISTANCE COEFFICIENT CURRENT at REVERSE VOLTAGE No. SUFFIX VZ (V) at IZ rdif (Ω) at IZ SZ (%/K) at IZ IR (µA) (1) IZ (mA) VR (V) MIN. NOM. MAX. TYP. MAX. MIN. MAX. MAX. C3V6 3.4 3.6 3.848−0.14 −0.04 100 100 1 C3V9 3.7 3.9 4.148−0.14 −0.04 100 50 1 C4V3 4.0 4.3 4.647−0.12 −0.02 100 25 1 C4V7 4.4 4.7 5.037−0.10 0.00 100 10 1 C5V1 4.8 5.1 5.436−0.08 −0.02 10051C5V6 5.2 5.6 6.024−0.04 0.04 100 10 2 C6V2 5.8 6.2 6.623−0.01 0.06 10052C6V8 6.4 6.8 7.2130.00 0.07 100 10 3 C7V5 7.0 7.5 7.9120.00 0.07 100 50 3 C8V2 7.7 8.2 8.7120.03 0.08 100 10 3 C9V1 8.5 9.1 9.6240.03 0.08 50 10 5 C10 9.4 10 10.6240.05 0.09 50 7 7.5 C11 10.4 11 11.6470.05 0.10 50 4 8.2 C12 11.4 12 12.7470.05 0.10 50 3 9.1 C13 12.4 13 14.1 5 10 0.05 0.10 50 2 10 C15 13.8 15 15.6 5 10 0.05 0.10 50 1 11 C16 15.3 16 17.1 6 15 0.06 0.11 25 1 12 C18 16.8 18 19.1 6 15 0.06 0.11 25 1 13 C20 18.8 20 21.2 6 15 0.06 0.11 25 1 15 C22 20.8 22 23.3 6 15 0.06 0.11 25 1 16 C24 22.8 24 25.6 7 15 0.06 0.11 25 1 18 C27 25.1 27 28.9 7 15 0.06 0.11 25 1 20 C30 28 30 32 8 15 0.06 0.11 25 1 22 C33 31 33 35 8 15 0.06 0.11 25 1 24 C36 34 36 38 21 40 0.06 0.11 10 1 27 C39 37 39 41 21 40 0.06 0.11 10 1 30 C43 40 43 46 24 45 0.07 0.12 10 1 33 C47 44 47 50 24 45 0.07 0.12 10 1 36 1996 Jun 10 3, DIFFERENTIAL TEMPERATURE TEST REVERSE CURRENT TYPE WORKING VOLTAGE RESISTANCE COEFFICIENT CURRENT at REVERSE VOLTAGE No. SUFFIX VZ (V) at IZ rdif (Ω) at IZ SZ (%/K) at IZ IR (µA) (1) IZ (mA) VR (V) MIN. NOM. MAX. TYP. MAX. MIN. MAX. MAX. C51 48 51 54 25 60 0.07 0.12 10 1 39 C56 52 56 60 25 60 0.07 0.12 10 1 43 C62 58 62 66 25 80 0.08 0.13 10 1 47 C68 64 68 72 25 80 0.08 0.13 10 1 51 C75 70 75 79 30 100 0.08 0.13 10 1 56 C82 77 82 87 30 100 0.08 0.13 10 1 62 C91 85 91 96 60 200 0.09 0.135168 C100 94 100 106 60 200 0.09 0.135175 C110 104 110 116 80 250 0.09 0.135182 C120 114 120 127 80 250 0.09 0.135191 C130 124 130 141 110 300 0.09 0.1351100 C150 138 150 156 130 300 0.09 0.1351110 C160 153 160 171 150 350 0.09 0.1351120 C180 168 180 191 180 400 0.09 0.1351130 C200 188 200 212 200 500 0.09 0.1351150 C220 208 220 233 350 750 0.09 0.1321160 C240 228 240 256 400 850 0.09 0.1321180 C270 251 270 289 450 1000 0.09 0.1321200 Note 1. To complete the type number the suffix is added to the basic type number, e.g. BZD27-C51. 1996 Jun 10 4, Per type when used as transient suppressor diodes Tj = 25 °C unless otherwise specified.

REVERSE

REVERSE TEST TEMPERATURE CLAMPING CURRENT at BREAKDOWN CURREN COEFFICIENT VOLTAGE STAND-OFF TYPE VOLTAGE T VOLTAGE

NUMBER

V(BR)R (V) SZ (%/K) at I at Iat I testIV(V) RSM I (µA) test (CL)R R at Vtest (A) R (mA) (V) MIN. MIN. MAX. MAX. note 1 MAX. BZD27-C7V5 7.0 0.00 0.07 100 11.3 13.3 1500 6.2 BZD27-C8V2 7.7 0.03 0.08 100 12.3 12.2 1200 6.8 BZD27-C9V1 8.5 0.03 0.08 50 13.3 11.3 100 7.5 BZD27-C10 9.4 0.05 0.09 50 14.8 10.1 20 8.2 BZD27-C11 10.4 0.05 0.10 50 15.7 9.6 5 9.1 BZD27-C12 11.4 0.05 0.10 50 17.0 8.8 5 10 BZD27-C13 12.4 0.05 0.10 50 18.9 7.9 5 11 BZD27-C15 13.8 0.05 0.10 50 20.9 7.2 5 12 BZD27-C16 15.3 0.06 0.11 25 22.9 6.6 5 13 BZD27-C18 16.8 0.06 0.11 25 25.6 5.9 5 15 BZD27-C20 18.8 0.06 0.11 25 28.4 5.3 5 16 BZD27-C22 20.8 0.06 0.11 25 31.0 4.8 5 18 BZD27-C24 22.8 0.06 0.11 25 33.8 4.4 5 20 BZD27-C27 25.1 0.06 0.11 25 38.1 3.9 5 22 BZD27-C30 28 0.06 0.11 25 42.2 3.6 5 24 BZD27-C33 31 0.06 0.11 25 46.2 3.2 5 27 BZD27-C36 34 0.06 0.11 10 50.1 3.0 5 30 BZD27-C39 37 0.06 0.11 10 54.1 2.8 5 33 BZD27-C43 40 0.07 0.12 10 60.7 2.5 5 36 BZD27-C47 44 0.07 0.12 10 65.5 2.3 5 39 BZD27-C51 48 0.07 0.12 10 70.8 2.1 5 43 BZD27-C56 52 0.07 0.12 10 78.6 1.9 5 47 BZD27-C62 58 0.08 0.13 10 86.5 1.7 5 51 BZD27-C68 64 0.08 0.13 10 94.4 1.6 5 56 BZD27-C75 70 0.08 0.13 10 103.5 1.5 5 62 BZD27-C82 77 0.08 0.13 10 114 1.3 5 68 BZD27-C91 85 0.09 0.13 5 126 1.2 5 75 BZD27-C100 94 0.09 0.13 5 139 1.1 5 82 BZD27-C110 104 0.09 0.13 5 152 1.0 5 91 BZD27-C120 114 0.09 0.13 5 167 0.90 5 100 BZD27-C130 124 0.09 0.13 5 185 0.81 5 110 BZD27-C150 138 0.09 0.13 5 204 0.73 5 120 BZD27-C160 153 0.09 0.13 5 224 0.67 5 130 1996 Jun 10 5,

REVERSE

REVERSE TEST TEMPERATURE CLAMPING CURRENT at BREAKDOWN CURREN COEFFICIENT VOLTAGE STAND-OFF TYPE VOLTAGE T VOLTAGE

NUMBER

V(BR)R (V) S at IZ (%/K) at Itest I V(CL)R (V) RSM IR (µA)at Itest test at V(A) R (mA) (V) MIN. MIN. MAX. MAX. note 1 MAX. BZD27-C180 168 0.09 0.13 5 249 0.60 5 150 BZD27-C200 188 0.09 0.13 5 276 0.54 5 160 BZD27-C220 208 0.09 0.13 2 305 0.50 5 180 BZD27-C240 228 0.09 0.13 2 336 0.45 5 200 BZD27-C270 251 0.09 0.13 2 380 0.40 5 220 BZD27-C300 280 0.09 0.13 2 419 0.36 5 240 BZD27-C330 310 0.09 0.13 2 459 0.33 5 270 BZD27-C360 340 0.09 0.13 2 498 0.30 5 300 BZD27-C390 370 0.09 0.13 2 537 0.28 5 330 BZD27-C430 400 0.09 0.13 2 603 0.25 5 360 BZD27-C470 440 0.09 0.13 2 655 0.23 5 390 BZD27-C510 480 0.09 0.13 2 707 0.21 5 430 Note 1. Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig.8. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point BZD27-C3V6 to -C6V8 55 K/W BZD27-C7V5 to -C510 30 K/W Rth j-a thermal resistance from junction to ambient note 1 BZD27-C3V6 to -C6V8 175 K/W BZD27-C7V5 to -C510 150 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.7. For more information please refer to the ‘General Part of Handbook SC01’. 1996 Jun 10 6, GRAPHICAL DATA MBH454 MBH45533handbook, halfpage handbook, halfpage Ptot Ptot (W) (W) 2211000100 T (°C) 200 0 100 T (°C) 200 Types BZD27-C3V6 to -C6V8 Types BZD27-C7V5 to -C510 Solid line: tie-point temperature. Solid line: tie-point temperature. Dotted line: ambient temperature; Dotted line: ambient temperature; device mounted as shown in Fig.7. device mounted as shown in Fig.7. Fig.2 Maximum total power dissipation as a Fig.3 Maximum total power dissipation as a function of temperature. function of temperature. 4 MGD524 MGD52510 handbook, halfpage 400handbook, halfpage P PZSM ZSM (W) (W) −2 010 10−1 1 10 tp (ms) 0 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 VZnom (V) Tj = 25 °C prior to surge. See also Fig 5. Tj = 25 °C prior to surge. Fig.4 Maximum non-repetitive peak reverse Fig.5 Maximum non-repetitive peak reverse power dissipation as a function of pulse power dissipation as a function of nominal duration (square pulse). working voltage. 1996 Jun 10 7, MGD520 handbook, halfpage 50 handbook, full pagewidth

IF

(A) 4.5 1 50 2.5 0 1.25 MSB213012VF (V) Tj = 25 °C. Dimensions in mm. Fig.6 Forward current as a function of forward voltage; typical values. Fig.7 Printed-circuit board for surface mounting. handbIRooSkM, h alfpage (%) t t1 t2 MGD521 In accordance with “IEC 60-1, Section 8”. t1 = 10 µs. t2 = 1000 µs. Fig.8 Non-repetitive peak reverse current pulse definition. 1996 Jun 10 8, PACKAGE OUTLINE 3.5 0.2 handbook, full pagewidth 0.3 2.05OD= 0.05 MBA505 1.9 O D1 = 0.1 Dimensions in mm. The marking band indicates the cathode. Fig.9 SOD87.

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jun 10 9]
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