Download: DISCRETE SEMICONDUCTORS DATA SHEET BZT03 series Voltage regulator diodes Product specification 1996 Jun 11 Supersedes data of April 1992 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BZT03 series Voltage regulator diodes Product specification 1996 Jun 11 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION construction. This package is hermetically sealed and fatigue free • Glass passivated Rugged glass SOD57 package, using as coefficients of expansion of all • High maximum operating a high temperature alloyed used parts are matched. temperature • Low leakage current • Excellent stability • Zener working voltage range: 2/3 page k(Datasheet) a 7.5 to 270 V for 38 types • Tra...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, 2 columns M3D116

BZT03 series Voltage regulator diodes

Product specification 1996 Jun 11 Supersedes data of April 1992 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION construction. This package is hermetically sealed and fatigue free • Glass passivated Rugged glass SOD57 package, using as coefficients of expansion of all • High maximum operating a high temperature alloyed used parts are matched. temperature • Low leakage current • Excellent stability • Zener working voltage range: 2/3 page k(Datasheet) a 7.5 to 270 V for 38 types • Transient suppressor stand-off voltage range: 6.2 to 430 V for 45 types MAM204 Fig.1 Simplified outline (SOD57) and symbol. • Available in ammo-pack. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Ptot total power dissipation Ttp = 25 °C; lead length 10 mm; see Fig.2 − 3.25 W Tamb = 45 °C; see Fig.2; − 1.30 W PCB mounted (see Fig.6) PZRM repetitive peak reverse power − 10 W dissipation PZSM non-repetitive peak reverse tp = 100 µs; square pulse; − 600 W power dissipation Tj = 25 °C prior to surge; see Fig.3 PRSM non-repetitive peak reverse 10/1000 µs exponential pulse (see Fig.4); − 300 W power dissipation Tj = 25 °C prior to surge Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C 1996 Jun 11 2, ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 0.5 A; see Fig.5 1.2 V Per type when used as voltage regulator diodes Tj = 25 °C unless otherwise specified. DIFFERENTIAL TEMPERATURE TEST REVERSE CURRENT TYPE WORKING VOLTAGE RESISTANCE COEFFICIENT CURRENT at REVERSE VOLTAGE No. SUFFIX VZ (V) at IZ rdif (Ω) at IZ SZ (%/K) at IZ IR (µA) (1) IZ (mA) VR (V) MIN. NOM. MAX. TYP. MAX. MIN. MAX. MAX. C7V5 7.0 7.5 7.9120.00 0.07 100 750 5.6 C8V2 7.7 8.2 8.7120.03 0.08 100 600 6.2 C9V1 8.5 9.1 9.6240.03 0.08 50 20 6.8 C10 9.4 10 10.6240.05 0.09 50 10 7.5 C11 10.4 11 11.6470.05 0.10 50 4 8.2 C12 11.4 12 12.7470.05 0.10 50 3 9.1 C13 12.4 13 14.1 5 10 0.05 0.10 50 2 10 C15 13.8 15 15.6 5 10 0.05 0.10 50 1 11 C16 15.3 16 17.1 6 15 0.06 0.11 25 1 12 C18 16.8 18 19.1 6 15 0.06 0.11 25 1 13 C20 18.8 20 21.2 6 15 0.06 0.11 25 1 15 C22 20.8 22 23.3 6 15 0.06 0.11 25 1 16 C24 22.8 24 25.6 7 15 0.06 0.11 25 1 18 C27 25.1 27 28.9 7 15 0.06 0.11 25 1 20 C30 28 30 32 8 15 0.06 0.11 25 1 22 C33 31 33 35 8 15 0.06 0.11 25 1 24 C36 34 36 38 21 40 0.06 0.11 10 1 27 C39 37 39 41 21 40 0.06 0.11 10 1 30 C43 40 43 46 24 45 0.07 0.12 10 1 33 C47 44 47 50 24 45 0.07 0.12 10 1 36 C51 48 51 54 25 60 0.07 0.12 10 1 39 C56 52 56 60 25 60 0.07 0.12 10 1 43 C62 58 62 66 25 80 0.08 0.13 10 1 47 C68 64 68 72 25 80 0.08 0.13 10 1 51 C75 70 75 79 30 100 0.08 0.13 10 1 56 C82 77 82 87 30 100 0.08 0.13 10 1 62 C91 85 91 96 60 200 0.09 0.135168 1996 Jun 11 3, DIFFERENTIAL TEMPERATURE TEST REVERSE CURRENT TYPE WORKING VOLTAGE RESISTANCE COEFFICIENT CURRENT at REVERSE VOLTAGE No. SUFFIX VZ (V) at IZ rdif (Ω) at IZ SZ (%/K) at IZ IR (µA) (1) IZ (mA) VR (V) MIN. NOM. MAX. TYP. MAX. MIN. MAX. MAX. C100 94 100 106 60 200 0.09 0.135175 C110 104 110 116 80 250 0.09 0.135182 C120 114 120 127 80 250 0.09 0.135191 C130 124 130 141 110 300 0.09 0.1351100 C150 138 150 156 130 300 0.09 0.1351110 C160 153 160 171 150 350 0.09 0.1351120 C180 168 180 191 180 400 0.09 0.1351130 C200 188 200 212 200 500 0.09 0.1351150 C220 208 220 233 350 750 0.09 0.1321160 C240 228 240 256 400 850 0.09 0.1321180 C270 251 270 289 450 1000 0.09 0.1321200 Note 1. To complete the type number the suffix is added to the basic type number, e.g. BZT03-C100. 1996 Jun 11 4, Per type when used as transient suppressor diodes Tj = 25 °C unless otherwise specified. TEMPERATURE TEST CLAMPING CURRENT at

BREAKDOWN

COEFFICIENT CURRENT VOLTAGE STAND-OFF TYPE VOLTAGE VOLTAGE

NUMBER

V(BR)R (V) S (%/K) atIV(V) at IRSM I (µA) atIZtest Itest (CL)R R at Vtest (A) R (mA) (V) MIN. MIN. MAX. MAX. note 1 MAX. BZT03-C7V5 7.0 0.00 0.07 100 11.3 26.5 1500 6.2 BZT03-C8V2 7.7 0.03 0.08 100 12.3 24.4 1200 6.8 BZT03-C9V1 8.5 0.03 0.08 50 13.3 22.7 100 7.5 BZT03-C10 9.4 0.05 0.09 50 14.8 20.3 20 8.2 BZT03-C11 10.4 0.05 0.10 50 15.7 19.1 5 9.1 BZT03-C12 11.4 0.05 0.10 50 17.0 17.7 5 10 BZT03-C13 12.4 0.05 0.10 50 18.9 15.9 5 11 BZT03-C15 13.8 0.05 0.10 50 20.9 14.4 5 12 BZT03-C16 15.3 0.06 0.11 25 22.9 13.1 5 13 BZT03-C18 16.8 0.06 0.11 25 25.6 11.7 5 15 BZT03-C20 18.8 0.06 0.11 25 28.4 10.6 5 16 BZT03-C22 20.8 0.06 0.11 25 31.0 9.7 5 18 BZT03-C24 22.8 0.06 0.11 25 33.8 8.9 5 20 BZT03-C27 25.1 0.06 0.11 25 38.1 7.9 5 22 BZT03-C30 28 0.06 0.11 25 42.2 7.1 5 24 BZT03-C33 31 0.06 0.11 25 46.2 6.5 5 27 BZT03-C36 34 0.06 0.11 10 50.1 6.0 5 30 BZT03-C39 37 0.06 0.11 10 54.1 5.5 5 33 BZT03-C43 40 0.07 0.12 10 60.7 4.9 5 36 BZT03-C47 44 0.07 0.12 10 65.5 4.6 5 39 BZT03-C51 48 0.07 0.12 10 70.8 4.2 5 43 BZT03-C56 52 0.07 0.12 10 78.6 3.8 5 47 BZT03-C62 58 0.08 0.13 10 86.5 3.5 5 51 BZT03-C68 64 0.08 0.13 10 94.4 3.2 5 56 BZT03-C75 70 0.08 0.13 10 103.5 2.9 5 62 BZT03-C82 77 0.08 0.13 10 114.0 2.6 5 68 BZT03-C91 85 0.09 0.13 5 126 2.4 5 75 BZT03-C100 94 0.09 0.13 5 139 2.2 5 82 BZT03-C110 104 0.09 0.13 5 152 2.0 5 91 BZT03-C120 114 0.09 0.13 5 167 1.8 5 100 BZT03-C130 124 0.09 0.13 5 185 1.6 5 110 BZT03-C150 138 0.09 0.13 5 204 1.5 5 120 BZT03-C160 153 0.09 0.13 5 224 1.3 5 130 1996 Jun 11 5, TEMPERATURE TEST CLAMPING CURRENT at

BREAKDOWN

COEFFICIENT CURRENT VOLTAGE STAND-OFF TYPE VOLTAGE VOLTAGE

NUMBER

V(BR)R (V) S at IZ (%/K) at Itest I V(CL)R (V) RSM Iat I test R (µA) at V test (A) R (mA) (V) MIN. MIN. MAX. MAX. note 1 MAX. BZT03-C180 168 0.09 0.13 5 249 1.2 5 150 BZT03-C200 188 0.09 0.13 5 276 1.1 5 160 BZT03-C220 208 0.09 0.13 2 305 1.0 5 180 BZT03-C240 228 0.09 0.13 2 336 0.9 5 200 BZT03-C270 251 0.09 0.13 2 380 0.8 5 220 BZT03-C300 280 0.09 0.13 2 419 0.72 5 240 BZT03-C330 310 0.09 0.13 2 459 0.65 5 270 BZT03-C360 340 0.09 0.13 2 498 0.60 5 300 BZT03-C390 370 0.09 0.13 2 537 0.56 5 330 BZT03-C430 400 0.09 0.13 2 603 0.50 5 360 BZT03-C470 440 0.09 0.13 2 655 0.45 5 390 BZT03-C510 480 0.09 0.13 2 707 0.42 5 430 Note 1. Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig.4. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 46 K/W Rth j-a thermal resistance from junction to ambient note 1 100 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.6. For more information please refer to the ‘General Part of Handbook SC01’. 1996 Jun 11 6, GRAPHICAL DATA MBH534 4 MBH5354 10 handbook, halfpage handbook, halfpage Ptot (W) PZSM (W) 0 10 0 100 T (°C) 200 10−2 10−1 1 tp (ms) 10 Solid line: tie-point temperature; lead length = 10 mm. Tj = 25 °C prior to surge. Dotted line: ambient temperature; PCB mounted as shown in Fig 6. Fig.3 Maximum non-repetitive peak reverse Fig.2 Maximum total power dissipation as a power dissipation as a function of pulse function of temperature. duration (square pulse). MBH536 handbIRooSkM, h alfpage 3handbook, halfpage (%)

IF

100 (A) t t10t0122 MGD521 VF (V) In accordance with “IEC 60-1, Section 8”. t1 = 10 µs. t = 1000 µs. Tj = 25 °C.2 Fig.4 Non-repetitive peak reverse current Fig.5 Forward current as a function of forward pulse definition. voltage; typical values. 1996 Jun 11 7, handbook, halfpage MGA200 Dimensions in mm. Fig.6 Device mounted on a printed-circuit board. 1996 Jun 11 8, PACKAGE OUTLINE handbook, full pagewidthka0.81 max 3.81 4.57 max 28 min max 28 min MBC880 Dimensions in mm. The marking band indicates the cathode. Fig.7 SOD57.

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jun 11 9]
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