Download: DISCRETE SEMICONDUCTORS DATA SHEET BYV98 Fast soft-recovery rectifier Product specification 1996 Jun 07 Supersedes data of May 1993 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYV98 Fast soft-recovery rectifier Product specification 1996 Jun 07 Supersedes data of May 1993 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION construction. This package is hermetically sealed and fatigue free • Glass passivated Rugged glass SOD57 package, as coefficients of expansion of all • High maximum operating using a high temperature alloyed used parts are matched. temperature • Low leakage current • Excellent stability • Available in ammo-pack. 2/3 page k(Datasheet) a MAM047 Fig.1 Simplified outline (SOD57) a...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, 2 columns M3D116

BYV98 Fast soft-recovery rectifier

Product specification 1996 Jun 07 Supersedes data of May 1993 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION construction. This package is hermetically sealed and fatigue free • Glass passivated Rugged glass SOD57 package, as coefficients of expansion of all • High maximum operating using a high temperature alloyed used parts are matched. temperature • Low leakage current • Excellent stability • Available in ammo-pack. 2/3 page k(Datasheet) a MAM047 Fig.1 Simplified outline (SOD57) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRSM non-repetitive peak reverse voltage − 2100 V VRRM repetitive peak reverse voltage − 2000 V IF(AV) average forward current Ttp = 55 °C; lead length = 10 mm − 1.00 A see Fig. 2; averaged over any 20 ms period; see also Fig. 6 IF(AV) average forward current Tamb = 60 °C; PCB mounting (see − 0.43 A Fig.11); see Fig. 3; averaged over any 20 ms period; see also Fig. 6 IFRM repetitive peak forward current Ttp = 55 °C; see Fig. 4 − 9.0 A Tamb = 60 °C; see Fig. 5 − 4.5 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; − 15 A Tj = Tj max prior to surge; VR = VRRMmax Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.7 −65 +175 °C 1996 Jun 07 2, ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 2 A; Tj = Tj max; see Fig. 8 − − 2.2 V IF = 2 A; see Fig. 8 − − 2.4 V IR reverse current VR = VRRMmax; see Fig. 9 − − 5 µA VR = VRRMmax; Tj = 125 °C; − − 50 µA see Fig. 9 trr reverse recovery time when switched from IF = 0.5 A − − 300 ns to IR = 1 A; measured at IR = 0.25 A; see Fig. 12 Cd diode capacitance f = 1 MHz; VR = 0 V; see Fig 10 − 30 − pF dI maximum slope of when switched from IF = 1 A to − − 5 A/µs -R- dt reverse recovery current VR ≥ 30 V and dIF/dt = −1 A/µs; see Fig.13 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 46 K/W Rth j-a thermal resistance from junction to ambient note 1 100 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11. For more information please refer to the ‘General Part of Handbook SC01’. 1996 Jun 07 3, GRAPHICAL DATA MGC601 MGC600 1.6 0.6 handbook, halfpage handbook, halfpage IF(AV) IF(AV) 1.2 0.4 0.8 0.2 0.4000100 o 200 0 100 o 200Ttp ( C) Tamb ( C) a = 1.42; VR = VRRMmax; δ = 0.5. a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.11. Switched mode application. Switched mode application. Fig.2 Maximum permissible average forward Fig.3 Maximum permissible average forward current as a function of tie-point temperature current as a function of ambient temperature (including losses due to reverse leakage). (including losses due to reverse leakage). MGC603 handbook, full pagewidth δ = IFRM 0.05 (A) 6 0.1 4 0.2 0.5 1.0 10 –2 10 –1 1 10 102 103 104 tp (ms) Ttp = 55°C; Rth j-tp = 46 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 2000 V. Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Jun 07 4, MGC604 handbook, full pagewidth δ = IFRM 0.05 3 0.1 2 0.2 0.5 1.0 10 –2 10 –1 1 10 102 103 104 tp (ms) Tamb = 60 °C; Rth j-a = 100 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 2000 V. Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MGC599 MEA524 - 1 3 200 handbook, halfpage handbook, halfpage a=3 2.5 2 1.57

P

(W) Tj ( o1.42 C) 0000.5 1.0 0 1000 2000 I (A) VR (V)F(AV) a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Solid line = VRRM; δ = 0.1. Fig.6 Maximum steady state power dissipation Dotted line = VRRM; δ = 0.5. (forward plus leakage current losses, excluding switching losses) as a function Fig.7 Maximum permissible junction temperature of average forward current. as a function of reverse voltage. 1996 Jun 07 5, MEA523 MLC319 10 3 handbook, halfpage handbook1, 0halfpage

IF

(A) IR 8 (µA) 010123450100 o 200 V (V) Tj ( C)F Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. VR = VRRMmax. Fig.8 Forward current as a function of forward Fig.9 Reverse current as a function of junction voltage; maximum values. temperature; maximum values. MGC602 handboo1k,0 halfpage 50handbook, halfpage Cd (pF) 1 10 102 103 MGA200 VR (V) f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.10 Diode capacitance as a function of reverse voltage; typical values. Fig.11 Device mounted on a printed-circuit board. 1996 Jun 07 6, handbook, full pagewidth DUT IF + 0.5 Ω 25 V t10 rr1Ω50Ω0t0.25 0.5

IR

1 MAM057 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.12 Test circuit and reverse recovery time waveform and definition. handboIoFk, halfpage dIF dt trr 10% t dIR dt 100% IR MGC499 Fig.13 Reverse recovery definitions. 1996 Jun 07 7, PACKAGE OUTLINE handbook, full pagewidthka0.81 max 3.81 4.57 max 28 min max 28 min MBC880 Dimensions in mm. The marking band indicates the cathode. Fig.14 SOD57.

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jun 07 8]
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