Download: DISCRETE SEMICONDUCTORS DATA SHEET BYV26 series Fast soft-recovery controlled avalanche rectifiers Product specification 1996 May 30 Supersedes data of February 1994

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BYV26 series Fast soft-recovery controlled avalanche rectifiers Product specification 1996 May 30 Supersedes data of February 1994 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Rugged glass SOD57 package, using expansion of all used parts are • High maximum operating a high temperature alloyed matched. temperature construction. • Low leakage current • Excellent stability • Guaranteed avalanche energy 2/3 page k(Datasheet) a abs...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, 2 columns M3D116

BYV26 series Fast soft-recovery

controlled avalanche rectifiers Product specification 1996 May 30 Supersedes data of February 1994 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Rugged glass SOD57 package, using expansion of all used parts are • High maximum operating a high temperature alloyed matched. temperature construction. • Low leakage current • Excellent stability • Guaranteed avalanche energy 2/3 page k(Datasheet) a absorption capability MAM047 • Available in ammo-pack. Fig.1 Simplified outline (SOD57) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYV26A − 200 V BYV26B − 400 V BYV26C − 600 V BYV26D − 800 V BYV26E − 1000 V BYV26F − 1200 V BYV26G − 1400 V VR continuous reverse voltage BYV26A − 200 V BYV26B − 400 V BYV26C − 600 V BYV26D − 800 V BYV26E − 1000 V BYV26F − 1200 V BYV26G − 1400 V IF(AV) average forward current Ttp = 85 °C; lead length = 10 mm; BYV26A to E see Figs 2 and 3; − 1.00 A averaged over any 20 ms period; BYV26F and G − 1.05 A see also Figs 10 and 11 IF(AV) average forward current Tamb = 60 °C; PCB mounting (see BYV26A to E Fig.19); see Figs 4 and 5; − 0.65 A averaged over any 20 ms period; BYV26F and G − 0.68 A see also Figs 10 and 11 IFRM repetitive peak forward current Ttp = 85 °C; see Figs 6 and 7 BYV26A to E − 10.0 A BYV26F and G − 9.6 A 1996 May 30 2, SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IFRM repetitive peak forward current Tamb = 60 °C; see Figs 8 and 9 BYV26A to E − 6.0 A BYV26F and G − 6.4 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max − 30 A prior to surge; VR = VRRMmax ERSM non-repetitive peak reverse IR = 400 mA; Tj = Tj max prior to − 10 mJ avalanche energy surge; inductive load switched off Tstg storage temperature −65 +175 °C Tj junction temperature see Figs 12 and 13 −65 +175 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 1 A; Tj = Tj max; BYV26A to E see Figs 14 and 15 − − 1.3 V BYV26F and G − − 1.3 V VF forward voltage IF = 1 A; BYV26A to E see Figs 14 and 15 − − 2.50 V BYV26F and G − − 2.15 V V(BR)R reverse avalanche breakdown IR = 0.1 mA voltage BYV26A 300 − − V BYV26B 500 − − V BYV26C 700 − − V BYV26D 900 − − V BYV26E 1100 − − V BYV26F 1300 − − V BYV26G 1500 − − V IR reverse current VR = VRRMmax; see Fig.16 − − 5 µA VR = VRRMmax; − − 150 µA Tj = 165 °C; see Fig.16 trr reverse recovery time when switched from BYV26A to C IF = 0.5 A to IR = 1 A; − − 30 ns measured at IR = 0.25 A;BYV26D and E − − 75 ns see Fig.20 BYV26F and G − − 150 ns Cd diode capacitance f = 1 MHz; VR = 0 V; BYV26A to C see Figs 17 and 18 − 45 − pF BYV26D and E − 40 − pF BYV26F and G − 35 − pF 1996 May 30 3, SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dI maximum slope of reverse recovery when switched from -R- dt current IF = 1 A to VR ≥ 30 V and BYV26A to C dIF/dt = −1 A/µs; − − 7 A/µs see Fig.21 BYV26D and E − − 6 A/µs BYV26F and G − − 5 A/µs THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 46 K/W Rth j-a thermal resistance from junction to ambient note 1 100 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.19. For more information please refer to the ‘General Part of Handbook SC01’. 1996 May 30 4, GRAPHICAL DATA MSA855 MLB53312handbook, halfpage handbook, halfpage 20 15 10 lead length (mm) I F(AV) I F(AV) (A) (A) lead length 10 mm 0.51000100 T ( o C) 200 0 100 T ( o C) 200tp tp BYV26A to E BYV26F andGa= 1.42; VR = VRRMmax; δ = 0.5. a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. Switched mode application. Fig.2 Maximum average forward current as a Fig.3 Maximum average forward current as a function of tie-point temperature (including function of tie-point temperature (including losses due to reverse leakage). losses due to reverse leakage). MSA856 MLB53411handbook, halfpage handbook, halfpage I F(AV) I F(AV) (A) (A) 0.5 0.5000100To200 0 100 o 200amb ( C) Tamb ( C) BYV26A to E BYV26F andGa= 1.42; VR = VRRMmax; δ = 0.5. a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.19. Device mounted as shown in Fig.19. Switched mode application. Switched mode application. Fig.4 Maximum average forward current as a Fig.5 Maximum average forward current as a function of ambient temperature (including function of ambient temperature (including losses due to reverse leakage). losses due to reverse leakage). 1996 May 30 5, MSA860 I FRM (A) δ = 0.05 6 0.1 4 0.2 0.5 10 2 101110 102 103 4t p (ms) 10 BYV26A to E. Ttp = 85°C; Rth j-tp = 46 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MLB535 I FRM (A) δ = 0.05 6 0.1 4 0.2 0.5 10 2 101110 10 2 10 3 4t p (ms) 10 BYV26F and G. Ttp = 85°C; Rth j-tp = 46 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V. Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 May 30 6, MSA859 I FRM (A) δ = 0.05 0.1 0.2 0.51110 2 101110 102 103 4t p (ms) 10 BYV26A to E Tamb = 60 °C; Rth j-a = 100 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MLB536 I FRM (A) 6 δ = 0.05 4 0.1 0.2 0.5 10 2 101110 10 2 10 3 4t p (ms) 10 BYV26F and G Tamb = 60 °C; Rth j-a = 100 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V. Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 May 30 7, MSA854 MLB53233PP(W) (W) a = 3 2.5 2 1.57 a = 3 2.52221.57 1.42 1.42110000.5 I F(AV)(A) 1 0 0.5 I 1F(AV)(A) BYV26A to E BYV26F andGa= IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.10 Maximum steady state power dissipation Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, (forward plus leakage current losses, excluding switching losses) as a function of excluding switching losses) as a function of average forward current. average forward current. MSA857 MLB599 200 200 handbook, halfpage handbook, halfpageTjTj( o o C) ( C) 100 100ABCDEFG000400 800VR(V) 1200 0 1000 2000 VR (V) BYV26A to E BYV26F and G Solid line = VR. Solid line = VR. Dotted line = VRRM; δ = 0.5. Dotted line = VRRM; δ = 0.5. Fig.12 Maximum permissible junction temperature Fig.13 Maximum permissible junction temperature as a function of reverse voltage. as a function of reverse voltage. 1996 May 30 8, MSA853 MBD42788handbook, halfpage handbook, halfpage IF IF (A) (A) 66442200024680246VF (V) VF (V) BYV26A to E BYV26F and G Dotted line: Tj = 175 °C. Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. Solid line: Tj = 25 °C. Fig.14 Forward current as a function of forward Fig.15 Forward current as a function of forward voltage; maximum values. voltage; maximum values. 3 MGC55010 MSA8582 handbook, halfpage handboo1k,0 halfpage

IR

(µA) Cd (pF) BYV26A,B,C 10 BYV26D,E11110 102 30 100 T (°C) 200VR(V) j BYV26A to E VR = VRRMmax. f = 1 MHz; Tj = 25 °C. Fig.16 Reverse current as a function of junction Fig.17 Diode capacitance as a function of reverse temperature; maximum values. voltage, typical values. 1996 May 30 9, MBD437 handboo1k,0 halfpage 50handbook, halfpage Cd (pF) 1 10 102 10 3 104VMGA200R (V) BYV26F andGf= 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.18 Diode capacitance as a function of reverse voltage, typical values. Fig.19 Device mounted on a printed-circuit board. handbook, full pagewidth DUT IF (A) + 0.5 t 10 Ω 25 V rr1Ω50Ω0t0.25 0.5

IR

(A) 1 MAM057 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.20 Test circuit and reverse recovery time waveform and definition. 1996 May 30 10, handboIoFk, halfpage dIF dt trr 10% t dIR dt 100% IR MGC499 Fig.21 Reverse recovery definitions. 1996 May 30 11, PACKAGE OUTLINE handbook, full pagewidthka0.81 max 3.81 4.57 max 28 min max 28 min MBC880 Dimensions in mm. The marking band indicates the cathode. Fig.22 SOD57.

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 30 12]
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