Download: DATA SHEET BYV10 series Schottky barrier diodes

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 BYV10 series Schottky barrier diodes Product specification 1996 May 13 Supersedes data of April 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Low switching losses The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in • Fast recovery time planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology. • Guard ring protected • Hermetically sealed leaded glass (1) Implotec is a trademark of Philips. package. APPLICATIONS handbook, 4 columns...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage M3D119

BYV10 series Schottky barrier diodes

Product specification 1996 May 13 Supersedes data of April 1992 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION • Low switching losses The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in • Fast recovery time planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology. • Guard ring protected • Hermetically sealed leaded glass (1) Implotec is a trademark of Philips. package.

APPLICATIONS

handbook, 4 columnska• Low power, switched-mode power supplies MAM218 • Rectifying Fig.1 Simplified outline (SOD81) and symbol. • Polarity protection. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYV10-20 − 20 V BYV10-30 − 30 V BYV10-40 − 40 V IF(AV) average forward current note 1 − 1 A Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Note 1. Refer to SOD81 standard mounting conditions. 1996 May 13 2, ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 0.1 A − − 390 mV IF = 1 A − − 550 mV IF = 3 A − − 850 mV IR reverse current VR = VRRMmax; note 1 − − 1 mA Cd diode capacitance VR = 0 V; f = 1 MHz − 220 − pF Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 100 K/W Note 1. Refer to SOD81 standard mounting conditions. 1996 May 13 3, PACKAGE OUTLINE 5 max handbook, full pagewidth 0.81 max 2.15 28 min 3.8 max 28 min MBC051max Dimensions in mm. Fig.2 SOD81.

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 13 4]
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