Download: DISCRETE SEMICONDUCTORS DATA SHEET BYM99 Ultra fast low-loss controlled avalanche rectifier Product specification 1996 Feb 19 Supersedes data of June 1994

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BYM99 Ultra fast low-loss controlled avalanche rectifier Product specification 1996 Feb 19 Supersedes data of June 1994 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Rugged glass SOD64 package, using expansion of all used parts are • Low leakage current a high temperature alloyed matched. construction. • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack 2/3 page k(Datasheet) a • Al...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, 2 columns M3D118

BYM99 Ultra fast low-loss

controlled avalanche rectifier Product specification 1996 Feb 19 Supersedes data of June 1994 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Rugged glass SOD64 package, using expansion of all used parts are • Low leakage current a high temperature alloyed matched. construction. • Excellent stability • Guaranteed avalanche energy absorption capability • Available in ammo-pack 2/3 page k(Datasheet) a • Also available with preformed leads MAM104 for easy insertion. Fig.1 Simplified outline (SOD64) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 600 V VR continuous reverse voltage − 600 V IF(AV) average forward current Ttp = 50 °C; lead length = 10 mm − 1.8 A see Fig. 2; averaged over any 20 ms period; see also Fig 6 Tamb = 60 °C; PCB mounting (see − 0.8 A Fig.10); see Fig. 3; averaged over any 20 ms period; see also Fig. 6 IFRM repetitive peak forward current Ttp = 50 °C; see Fig. 4 − 15 A Tamb = 60 °C; see Fig. 5 − 7 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; − 40 A Tj = Tj max prior to surge; VR = VRRMmax ERSM non-repetitive peak reverse L = 120 mH; Tj = Tj max prior to − 10 mJ avalanche energy surge; inductive load switched off Tstg storage temperature −65 +175 °C Tj junction temperature −65 +150 °C 1996 Feb 19 2, ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 3 A; Tj = Tj max; see Fig. 7 − − 1.95 V IF = 3 A; see Fig. 7 − − 3.60 V V(BR)R reverse avalanche IR = 0.1 mA 700 − − V breakdown voltage IR reverse current VR = VRRMmax; − − 5 µA see Fig. 8 VR = VRRMmax; Tj = 150 °C; − − 75 µA see Fig. 8 trr reverse recovery time when switched from IF = 0.5 A − − 15 ns to IR = 1 A; measured at IR = 0.25 A; see Fig. 12 Cd diode capacitance f = 1 MHz; VR = 0 V; see Fig. 9 − 135 − pF dI maximum slope of reverse when switched from IR F = 1 A to − − 3 A/µs- dt recovery current VR ≥ 30 V and dIF/dt = −1 A/µs; see Fig.11 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 25 K/W Rth j-a thermal resistance from junction to ambient note 1 75 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.10. For more information please refer to the ‘General Part of Handbook SC01’. 1996 Feb 19 3, GRAPHICAL DATA MLB646 MLB647 2.4 2.0 handbook, halfpage handbook, halfpage I IF(AV) F(AV) 1.6 1.8 lead length 10 mm 1.2 1.2 0.8 0.6 0.4000100Ttp( o C) 200 0 100 o 200Tamb( C) a = 1.42; VR = VRRMmax; δ = 0.5. a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.10. Switched mode application. Switched mode application. Fig.2 Maximum permissible average forward Fig.3 Maximum permissible average forward current as a function of tie-point temperature current as a function of ambient temperature (including losses due to reverse leakage). (including losses due to reverse leakage). MLB648 handbook,1 fu6ll pagewidthIδ= 0.05FRM (A) 0.1 0.2 0.5 10 2 101110 102 103 4t p (ms) 10 Ttp = 50°C; Rth j-tp = 25 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V. Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Feb 19 4, MLB649 handbook, full pagewidth I FRM (A) δ = 0.05 0.1 0.2 2 0.5 10 2 101110 10 2 10 3 4t p (ms) 10 Tamb = 60 °C; Rth j-a = 75 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 600 V. Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MGC546 MLB645 handbook, halfpage 8handbook, halfpage P IF (W) a=3 2.5 2 1.57 1.42 (A) 362412000120246IF(AV) (A) VF (V) a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Dotted line: Tj = 150 °C. Solid line: Tj = 25 °C.Fig.6 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function Fig.7 Forward current as a function of forward of average forward current. voltage; maximum values. 1996 Feb 19 5, MGC547 MGC54822handboo1k,0 halfpage handboo1k,0 halfpage IR Cd (µA) (pF) 1 10 0 100 o 200 1 10 10 2 103 Tj ( C) VR (V) f = 1 MHz; Tj = 25 °C. VR = VRRMmax. Fig.8 Reverse current as a function of junction Fig.9 Diode capacitance as a function of reverse temperature; maximum values. voltage; typical values. handbook, halfpage 25 andboIoFk, halfpage dIF dt 50 trr 10% t dIR dt 100% IR MGC499 MGA200 Dimensions in mm. Fig.10 Device mounted on a printed-circuit board. Fig.11 Reverse recovery definitions. 1996 Feb 19 6, handbook, full pagewidth DUT IF + 0.5 10 Ω 25 V trr1Ω50Ω0t0.25 0.5

IR

1 MAM057 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.12 Test circuit and reverse recovery time waveform and definition. 1996 Feb 19 7, PACKAGE OUTLINE handbook, full pagewidthka1.35 max 4.5 max 28 min 5.0 max 28 min MBC049 Dimensions in mm. The marking band indicates the cathode. Fig.13 SOD64.

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Feb 19 8]
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