Download: DISCRETE SEMICONDUCTORS DATA SHEET BYM63 Ripple blocking diode Product specification 1996 Jun 10 Supersedes data of December 1995 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BYM63 Ripple blocking diode Product specification 1996 Jun 10 Supersedes data of December 1995 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Rugged glass SOD64 package, using expansion of all used parts are • High maximum operating a high temperature alloyed matched. temperature construction. • Low leakage current • Excellent stability • Guaranteed minimum turn-on time for absorbing forward currentkatransients and oscillations ...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, 2 columns M3D118

BYM63 Ripple blocking diode

Product specification 1996 Jun 10 Supersedes data of December 1995 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION This package is hermetically sealed and fatigue free as coefficients of • Glass passivated Rugged glass SOD64 package, using expansion of all used parts are • High maximum operating a high temperature alloyed matched. temperature construction. • Low leakage current • Excellent stability • Guaranteed minimum turn-on time for absorbing forward currentkatransients and oscillations 2/3 page (Datasheet) • Specially designed as rectifier in MAM104 the auxiliary power supply in e.g. switched mode power supplies • Available in ammo-pack. • Also available with preformed leads Fig.1 Simplified outline (SOD64) and symbol. for easy insertion. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 300 V VR continuous reverse voltage − 300 V IF(AV) average forward current averaged over any 20 ms period; − 2.4 A Ttp = 55 °C; lead length = 10 mm; see Fig.2; see also Fig.4 averaged over any 20 ms period; − 1.0 A Tamb = 65 °C; PCB mounting (Fig.8); see Fig.3; see also Fig.4 IFRM repetitive peak forward current Ttp = 55 °C − 21 A Tamb = 65 °C − 8.5 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; − 45 A Tj = Tj max prior to surge; VR = VRRMmax Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C 1996 Jun 10 2, ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 2 A; Tj = Tj max; see Fig.5 − − 1.34 V IF = 2 A; see Fig.5 − − 2.30 V IR reverse current VR = VRRMmax; − − 10 µA see Fig.6 VR = VRRMmax; Tj = 165 °C; − − 150 µA see Fig.6 tfr forward recovery time when switched to IF = 5 A − − 1.5 µs in 50 ns; see Fig.9 ton turn-on time when switched from VF = 0 V to 400 − − ns VF = 3 V; measured between 10% and 90% of IF max; see Fig.11 trr reverse recovery time when switched from IF = 0.5 A to − − 150 ns IR = 1 A; measured at IR = 0.25 A; see Fig.11 Cd diode capacitance f = 1 MHz; VR = 0 V; see Fig.7 − 65 − pF THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 25 K/W Rth j-a thermal resistance from junction to ambient note 1 75 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.8. For more information please refer to the ‘General Part of Handbook SC01.’ 1996 Jun 10 3, GRAPHICAL DATA MBD421 MBD416 3 2.0 handbook, halfpage handbook, halfpage I F(AV) I F(AV) (A) (A) 1.6 lead length 10 mm 1.2 0.8 0.4000100 o 200T ( C) 0 100 200tpTamb( o C) a = 1.42; VR = VRRMmax; δ = 0.5. a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.8. Switched mode application. Switched mode application. Fig.2 Maximum permissible average forward Fig.3 Maximum permissible average forward current as a function of tie-point temperature current as a function of ambient temperature (including losses due to reverse leakage). (including losses due to reverse leakage). MBD430 MBD426 5 10 handbook, halfpage P IF (W) a = 3 2.5 2 1.57 1.42 (A) 483624120000.6 1.2 1.8 2.4024I(A) VF (V)F(AV) a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Dotted line: Tj = 175 °C. Fig.4 Maximum steady state power dissipation Solid line: Tj = 25 °C. (forward plus leakage current losses, excluding switching losses) as a function Fig.5 Forward current as a function of forward of average forward current. voltage; maximum values. 1996 Jun 10 4, MGC549 103 MBD435 handbook, halfpage handboo1k,0 halfpage

IR

(µA) Cd (pF) 1120100 1 10 10 10 Tj (°C) 200VR(V) VR = VRRMmax. f = 1 MHz; Tj = 25 °C. Fig.6 Reverse current as a function of junction Fig.7 Diode capacitance as a function of reverse temperature; maximum values. voltage; typical values. 50 MGC500 handbook, halfpage handbook, halfVpaFge 7 100% 110% t fr t

IF

10% MGA200 t Dimensions in mm. Fig.8 Device mounted on a printed-circuit board. Fig.9 Forward recovery time definition. 1996 Jun 10 5, handbook, full pagewidth 3V DUT VF (V) 50 Ω 10 Ω 100% I 90%F (A) 10% ton MBH530 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 10 ns.

Fig.10 Test circuit and turn-on time waveform and definition.

handbook, full pagewidth IDUT F (A) + 0.5 10 Ω 25Vtrr1Ω50Ω0t0.25 0.5

IR

(A) 1 MAM057 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns.

Fig.11 Test circuit and reverse recovery time waveform and definition.

1996 Jun 10 6, PACKAGE OUTLINE handbook, full pagewidthka1.35 max 4.5 max 28 min 5.0 max 28 min MBC049 Dimensions in mm. The marking band indicates the cathode. Fig.12 SOD64.

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jun 10 7]
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