Download: DISCRETE SEMICONDUCTORS DATA SHEET BYM26 series Fast soft-recovery controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of February 1994

DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BYM26 series Fast soft-recovery controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of February 1994 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION construction. This package is hermetically sealed and fatigue free • Glass passivated Rugged glass SOD64 package, as coefficients of expansion of all • High maximum operating using a high temperature alloyed used parts are matched. temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy 2/3 page k(Datasheet) a abs...
Author: Cintrón Shared: 8/19/19
Downloads: 553 Views: 1967

Content

DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, 2 columns M3D118

BYM26 series Fast soft-recovery

controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of February 1994 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION construction. This package is hermetically sealed and fatigue free • Glass passivated Rugged glass SOD64 package, as coefficients of expansion of all • High maximum operating using a high temperature alloyed used parts are matched. temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy 2/3 page k(Datasheet) a absorption capability MAM104 • Available in ammo-pack • Also available with preformed leads for easy insertion. Fig.1 Simplified outline (SOD64) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYM26A − 200 V BYM26B − 400 V BYM26C − 600 V BYM26D − 800 V BYM26E − 1000 V BYM26F − 1200 V BYM26G − 1400 V VR continuous reverse voltage BYM26A − 200 V BYM26B − 400 V BYM26C − 600 V BYM26D − 800 V BYM26E − 1000 V BYM26F − 1200 V BYM26G − 1400 V IF(AV) average forward current Ttp = 55 °C; lead length = 10 mm; BYM26A to E see Figs 2 and 3; − 2.30 A averaged over any 20 ms period; BYM26F and G − 2.40 A see also Figs 10 and 11 IF(AV) average forward current Tamb = 65 °C; PCB mounting (see BYM26A to E Fig.19); see Figs 4 and 5; − 1.05 A averaged over any 20 ms period; BYM26F and G − 1.00 A see also Figs 10 and 11 1996 May 24 2, SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IFRM repetitive peak forward current Ttp = 55 °C; see Figs 6 and 7 BYM26A to E − 19 A BYM26F and G − 21 A IFRM repetitive peak forward current Tamb = 65 °C; see Figs 8 and 9 BYM26A to E − 8.0 A BYM26F and G − 8.5 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max − 45 A prior to surge; VR = VRRMmax ERSM non-repetitive peak reverse L = 120 mH; Tj = Tj max prior to surge; − 10 mJ avalanche energy inductive load switched off Tstg storage temperature −65 +175 °C Tj junction temperature see Figs 12 and 13 −65 +175 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 2 A; Tj = Tj max; BYM26A to E see Figs 14 and 15 − − 1.34 V BYM26F and G − − 1.34 V VF forward voltage IF = 2 A; BYM26A to E see Figs 14 and 15 − − 2.65 V BYM26F and G − − 2.30 V V(BR)R reverse avalanche breakdown IR = 0.1 mA voltage BYM26A 300 − − V BYM26B 500 − − V BYM26C 700 − − V BYM26D 900 − − V BYM26E 1100 − − V BYM26F 1300 − − V BYM26G 1500 − − V IR reverse current VR = VRRMmax; − − 10 µA see Fig.16 VR = VRRMmax; − − 150 µA Tj = 165 °C; see Fig.16 trr reverse recovery time when switched from BYM26A to C IF = 0.5 A to IR = 1 A; − − 30 ns measured at I = 0.25 A; BYM26D andER− − 75 ns see Fig.20 BYM26F and G − − 150 ns 1996 May 24 3, SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Cd diode capacitance f = 1 MHz; VR = 0 V; BYM26A to C see Figs 17 and 18 − 85 − pF BYM26D and E − 75 − pF BYM26F and G − 65 − pF dI maximum slope of reverse recovery when switched from -R- dt current IF = 1 A to VR ≥ 30 V and BYM26A to C dIF/dt = −1 A/µs; − − 7 A/µs see Fig.21 BYM26D and E − − 6 A/µs BYM26F and G − − 5 A/µs THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 25 K/W Rth j-a thermal resistance from junction to ambient note 1 75 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.19. For more information please refer to the ‘General Part of Handbook SC01’. 1996 May 24 4, GRAPHICAL DATA MSA875 MBD421 2.4 3 handbook, halfpage handbook, halfpage I F(AV) I F(AV) (A) (A) 1.8 20 15 10 lead length (mm) lead length 10 mm 1.2 0.6000100Ttp( o C) 200 0 100 200Tt p ( o C) BYM26A to E BYM26F andGa= 1.42; VR = VRRMmax; δ = 0.5. a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. Switched mode application. Fig.2 Maximum average forward current as a Fig.3 Maximum average forward current as a function of tie-point temperature (including function of tie-point temperature (including losses due to reverse leakage). losses due to reverse leakage). MLB490 MBD416 2.0 2.0 handbook, halfpage handbook, halfpage I F(AV) I F(AV) (A) (A) 1.6 1.6 1.2 1.2 0.8 0.8 0.4 0.4000100 o 200 0 100 o 200Tamb( C) Tamb( C) BYM26A to E BYM26F andGa= 1.42; VR = VRRMmax; δ = 0.5. a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.19. Device mounted as shown in Fig.19. Switched mode application. Switched mode application. Fig.4 Maximum average forward current as a Fig.5 Maximum average forward current as a function of ambient temperature (including function of ambient temperature (including losses due to reverse leakage). losses due to reverse leakage). 1996 May 24 5, MSA879 I FRM (A) δ = 0.05 0.1 0.2 0.5 10 2 101110 102 103 104t p (ms) BYM26A to E Ttp = 55°C; Rth j-tp = 25 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MBD449 I FRM (A) 20 δ = 0.05 0.1 0.2 0.5 10 2 101110 10 2 10 3 4t p (ms) 10 BYM26F and G Ttp = 55°C; Rth j-tp = 25 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V. Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 May 24 6, MSA878 I FRM (A) δ = 0.05 0.1 4 0.2 0.5 10 2 101110 102 103 4t p (ms) 10 BYM26A to E Tamb = 65 °C; Rth j-a = 75 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MBD443 I FRM (A) 8 δ = 0.05 0.1 0.2 0.5 10 2 101110 10 2 10 3 4t p (ms) 10 BYM26F and G Tamb = 65 °C; Rth j-a = 75 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V. Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 May 24 7, MSA876 MBD43055PP(W) a = 3 2.5 2 1.57 1.42 (W) a = 3 2.5 2 1.57 1.42443322110000.6 1.2 1.8 2.4 0 0.6 1.2 1.8 2.4IIF(AV)(A) F(AV ) (A) BYM26A to E BYM26F andGa= IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Switched mode application. Switched mode application. Fig.10 Maximum steady state power dissipation Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, (forward plus leakage current losses, excluding switching losses) as a function of excluding switching losses) as a function of average forward current. average forward current. MSA873 200 MLB601 handbook, halfpage 200handbook, halfpage Tj (°C) T j ( o C) 100 100ABCDEFG000400 800 1200 V (V) 0 1000 2000R VR (V) BYM26A to E BYM26F and G Solid line = VR. Solid line = VR. Dotted line = VRRM; δ = 0.5. Dotted line = VRRM; δ = 0.5. Fig.12 Maximum permissible junction temperature Fig.13 Maximum permissible junction temperature as a function of reverse voltage. as a function of reverse voltage. 1996 May 24 8, MSA877 MBD426 10 10 handbook, halfpage handbook, halfpage IF IF (A) (A) 88664422000246024VF (V) VF (V) BYM26A to E BYM26F and G Dotted line: Tj = 175 °C. Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. Solid line: Tj = 25 °C. Fig.14 Forward current as a function of forward Fig.15 Forward current as a function of forward voltage; maximum values. voltage; maximum values. 3 MGC54910 MSA874 handbook, halfpage 2handboo1k,0 halfpage

IR

(µA) Cd (pF) BYM26A,B,C 10 BYM26D,E1110 102 V (V) 10 0 100 Tj (°C) 200 R BYM26A to E VR = VRRMmax. f = 1 MHz; Tj = 25 °C. Fig.16 Reverse current as a function of junction Fig.17 Diode capacitance as a function of reverse temperature; maximum values. voltage; typical values. 1996 May 24 9, MBD435 2 50 handboo1k,0 halfpage handbook, halfpage Cd (pF) 1 10 102 V (V) 10 MGA200

R

BYM26F andGf= 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.18 Diode capacitance as a function of reverse voltage; typical values. Fig.19 Device mounted on a printed-circuit board. handbook, full pagewidth DUT IF (A) + 0.5 t 10 Ω 25 V rr1Ω50Ω0t0.25 0.5

IR

(A) 1 MAM057 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.20 Test circuit and reverse recovery time waveform and definition. 1996 May 24 10, handboIoFk, halfpage dIF dt trr 10% t dIR dt 100% IR MGC499 Fig.21 Reverse recovery definitions. 1996 May 24 11, PACKAGE OUTLINE handbook, full pagewidthka1.35 max 4.5 max 28 min 5.0 max 28 min MBC049 Dimensions in mm. The marking band indicates the cathode. Fig.22 SOD64.

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 24 12]
15

Similar documents

DISCRETE SEMICONDUCTORS DATA SHEET BYG90-90 Schottky barrier rectifier diode Product specification 1996 May 13 Supersedes data of December 1994 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D113 BYG90-90 Schottky barrier rectifier diode Product specification 1996 May 13 Supersedes data of December 1994 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION • Low switching losses The BYG 90-90 is a Schottky barrier rectifier
DISCRETE SEMICONDUCTORS DATA SHEET BYG90-40 series Schottky barrier rectifier diodes Product specification 1996 May 06 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D113 BYG90-40 series Schottky barrier rectifier diodes Product specification 1996 May 06 File under Discrete Semiconductors, SC01 FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time handbook, 4
DATA SHEET BYG80 series Ultra fast low-loss controlled avalanche rectifiers
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D168 BYG80 series Ultra fast low-loss controlled avalanche rectifiers Objective specification 1996 May 24 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION The well-defined void-free case is of a transfer-moulded thermo-setting • Gl
DISCRETE SEMICONDUCTORS DATA SHEET BYG60 series Fast soft-recovery controlled avalanche rectifiers Preliminary specification 1996 Jun 05 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D168 BYG60 series Fast soft-recovery controlled avalanche rectifiers Preliminary specification 1996 Jun 05 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION The well-defined void-free case is of a transfer-moulded thermo-setting • G
DISCRETE SEMICONDUCTORS DATA SHEET BYG50 series Controlled avalanche rectifiers Preliminary specification 1996 May 24 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D168 BYG50 series Controlled avalanche rectifiers Preliminary specification 1996 May 24 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION The well-defined void-free case is of a transfer-moulded thermo-setting • Glass passivated DO-
DISCRETE SEMICONDUCTORS DATA SHEET BYD77 series Ultra fast low-loss controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of December 1991
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D121 BYD77 series Ultra fast low-loss controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of December 1991 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION hermetically sealed and fatigue free as coeff
DISCRETE SEMICONDUCTORS DATA SHEET BYD73 series Ultra fast low-loss controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of December 1991
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 BYD73 series Ultra fast low-loss controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of December 1991 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION hermetically sealed and fatigue free as coeff
DISCRETE SEMICONDUCTORS DATA SHEET BYD71 series Ultra fast low-loss controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of February 1992
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D122 BYD71 series Ultra fast low-loss controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of February 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION hermetically sealed and fatigue free as coeff
DISCRETE SEMICONDUCTORS DATA SHEET BYD63 Ripple blocking diode Product specification 1996 Jun 10 Supersedes data of November 1995 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 BYD63 Ripple blocking diode Product specification 1996 Jun 10 Supersedes data of November 1995 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION and fatigue free as coefficients of • expansion of all used parts areGlass passiva
DISCRETE SEMICONDUCTORS DATA SHEET BYD57 series Fast soft-recovery controlled avalanche rectifiers Product specification 1996 Jun 05 Supersedes data of October 1993
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D121 BYD57 series Fast soft-recovery controlled avalanche rectifiers Product specification 1996 Jun 05 Supersedes data of October 1993 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION hermetically sealed and fatigue free as coeffic
DISCRETE SEMICONDUCTORS DATA SHEET BYD53 series Fast soft-recovery controlled avalanche rectifiers Product specification 1996 Jun 05 Supersedes data of December 1994
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 BYD53 series Fast soft-recovery controlled avalanche rectifiers Product specification 1996 Jun 05 Supersedes data of December 1994 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION hermetically sealed and fatigue free as coeffi
DISCRETE SEMICONDUCTORS DATA SHEET BYD47 series Fast soft-recovery rectifiers Product specification 1996 Jun 05 Supersedes data of November 1994 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D121 BYD47 series Fast soft-recovery rectifiers Product specification 1996 Jun 05 Supersedes data of November 1994 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION hermetically sealed and fatigue free as coefficients of expansion o
DISCRETE SEMICONDUCTORS DATA SHEET BYD43 series Fast soft-recovery rectifiers Product specification 1996 Jun 05 Supersedes data of February 1995 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 BYD43 series Fast soft-recovery rectifiers Product specification 1996 Jun 05 Supersedes data of February 1995 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION and fatigue free as coefficients of expansion of all used parts are
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRF745/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRF745/D The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in Motorola Preferred Device a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal over
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRF2545CT/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRF2545CT/D The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in Motorola Preferred Device a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal o
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRF2060CT/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRF2060CT/D The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in Motorola Preferred Device a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal o
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRF2045CT/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRF2045CT/D The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in Motorola Preferred Device a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal o
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRF20200CT/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRF20200CT/D The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in Motorola Preferred Device a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRF20100CT/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRF20100CT/D The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in Motorola Preferred Device a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRF1545CT/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRF1545CT/D The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in Motorola Preferred Device a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal o
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRF1045/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRF1045/D The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in Motorola Preferred Device a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal ove
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRD835L/D  DPAK Surface Mount Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRD835L/D DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle Motorola Preferred Device with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and ste
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRD620CT/D  DPAK Surface Mount Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRD620CT/D DPAK Surface Mount Package .in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRD320/D  DPAK Surface Mount Package
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRD320/D DPAK Surface Mount Package .designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. These state–of–the–art devices have the follo
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRD1035CTL/D  DPAK Power Surface Mount Package SCHOTTKY BARRIER
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRD1035CTL/D DPAK Power Surface Mount Package SCHOTTKY BARRIER .employing the Schottky Barrier principle in a large area metal–to–silicon RECTIFIER power diode. State of the art geometry features epitaxial construction with oxide 10 AMPERES passi
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRB4030/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRB4030/D Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: Motorola Preferred Device • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Junction
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRB3030CT/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRB3030CT/D Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: Motorola Preferred Device • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Juncti
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRB3030CTL/D
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRB3030CTL/D .using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: Features: • Dual Diode Construction — May be Paralleled for Higher Current Output SCHOTTKY BARRIER •
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRB2545CT/D   D2PAK Surface Mount Power Package Motorola Preferred Device
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRB2545CT/D D2PAK Surface Mount Power Package Motorola Preferred Device The D2PAK Power Rectifier employs the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Center–Tap Conf
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRB2535CTL/D   D2PAK Surface Mount Power Package Motorola Preferred Device
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRB2535CTL/D D2PAK Surface Mount Power Package Motorola Preferred Device The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxi