Download: DISCRETE SEMICONDUCTORS DATA SHEET BYG90-40 series Schottky barrier rectifier diodes Product specification 1996 May 06 File under Discrete Semiconductors, SC01

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D113 BYG90-40 series Schottky barrier rectifier diodes Product specification 1996 May 06 File under Discrete Semiconductors, SC01 FEATURES • Low switching losses • Capability of absorbing very high surge current • Fast recovery time handbook, 4 columnscathode identifier • Guard ring protected • Plastic SMD package. kk aa APPLICATIONS MAM129 - 1 • Low power switched-mode power Top view supplies • Rectifying • Polarity protection. Fig.1 Simplified outline (SOD106A), pin configuration and symbol. DESCRIPTION The BYG 90-40 series consists of ...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage M3D113

BYG90-40 series Schottky barrier rectifier diodes

Product specification 1996 May 06 File under Discrete Semiconductors, SC01,

FEATURES

• Low switching losses • Capability of absorbing very high surge current • Fast recovery time handbook, 4 columnscathode identifier • Guard ring protected • Plastic SMD package. kk aa

APPLICATIONS

MAM129 - 1 • Low power switched-mode power Top view supplies • Rectifying • Polarity protection. Fig.1 Simplified outline (SOD106A), pin configuration and symbol.

DESCRIPTION

The BYG 90-40 series consists of Schottky barrier rectifier diodes, fabricated in planar technology, and encapsulated in rectangular SOD106A plastic SMD packages. 1996 May 06 2, LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage BYG90-20 − 20 V BYG90-30 − 30 V BYG90-40 − 40 V VRRM repetitive peak reverse voltage BYG90-20 − 20 V BYG90-30 − 30 V BYG90-40 − 40 V VRWM crest working reverse voltage BYG90-20 − 20 V BYG90-30 − 30 V BYG90-40 − 40 V IF(AV) average forward current Tamb = 65 °C; see Fig.2; − 1 A Rth j-a = 80 K/W; note 1; VR(equiv) = 0.2 V; note 2 IFSM non-repetitive peak forward current t = 8.3 µs half sine wave; − 30 A JEDEC method IRSM non-repetitive peak reverse current tp = 100 µs − 0.5 A Tstg storage temperature −65 +125 °C Tj junction temperature − 125 °C Notes 1. Refer to SOD106A standard mounting conditions. 2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. 1996 May 06 3, ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per diode VF forward voltage see Fig.2; note 1 IF = 1 A − − 550 mV IF = 3 A − − 850 mV IF = 1 A; Tj = 100 °C − − 450 mV IR reverse current VR = VRRMmax; note 1; see Fig.3 − − 1 mA VR = VRRMmax; Tj = 100 °C; note 1; − − 10 mA see Fig.3 Cd diode capacitance VR = 4 V; f = 1 MHz; see Fig.4 − − 75 pF Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 80 K/W Note 1. Refer to SOD106A standard mounting conditions. 1996 May 06 4, GRAPHICAL DATA MLC388 MLC38944handboo1k,0 halfpage handboo1k,0 halfpage (1) I IF R (mA) (µA) (2) 3 10310 (3) (1) 2 102 (2) 10 (3) (4) (4) 10 101100.2 0.4 0.6 0.8 1.0 0 10 20 30 V (V) 40VF(V)

R

(1) Tamb = 125 °C. (1) Tamb = 125 °C. (2) Tamb = 100 °C. (2) Tamb = 100 °C. (3) Tamb = 75 °C. (3) Tamb = 75 °C. (4) Tamb = 25 °C. (4) Tamb = 25 °C. Fig.2 Forward current as a function of forward Fig.3 Reverse current as a function of reverse voltage; typical values. voltage; typical values. 3 MLC39010 handbook, halfpage Cd (pF) 0 8 16 24 32VR(V) f = 1 MHz. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 1996 May 06 5, PACKAGE OUTLINE 5.5 handbook, full pagewidth 5.1 4.57 max 2.65 max 0.1 0.2 1.5 1.2 MSA356 - 1 cathode identifier 2.5 1.5 Dimensions in mm. The marking bar indicates the cathode. Fig.5 SOD106A. 1996 May 06 6,

DEFINITIONS

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 06 7]
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