Download: DISCRETE SEMICONDUCTORS DATA SHEET BYG60 series Fast soft-recovery controlled avalanche rectifiers Preliminary specification 1996 Jun 05 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D168 BYG60 series Fast soft-recovery controlled avalanche rectifiers Preliminary specification 1996 Jun 05 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION The well-defined void-free case is of a transfer-moulded thermo-setting • Glass passivated DO-214AC surface mountable plastic. • High maximum operating package with glass passivated chip. temperature • Low leakage current • Excellent stability handbook, 4 columns cathode band • Guaranteed avalanche energykaabsorption capability • UL 94V-O classified plastic package • Shipp...
Author:
Cintrón Shared: 8/19/19
Downloads: 405 Views: 4278
Content
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage M3D168BYG60 series Fast soft-recovery
controlled avalanche rectifiers Preliminary specification 1996 Jun 05 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION The well-defined void-free case is of a transfer-moulded thermo-setting • Glass passivated DO-214AC surface mountable plastic. • High maximum operating package with glass passivated chip. temperature • Low leakage current • Excellent stability handbook, 4 columns cathode band • Guaranteed avalanche energykaabsorption capability • UL 94V-O classified plastic package • Shipped in 12 mm embossed tape. Top view Side view MSA474 Fig.1 Simplified outline (DO-214AC; SOD106) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYG60D − 200 V BYG60G − 400 V BYG60J − 600 V BYG60K − 800 V BYG60M − 1000 V VR continuous reverse voltage BYG60D − 200 V BYG60G − 400 V BYG60J − 600 V BYG60K − 800 V BYG60M − 1000 V IF(AV) average forward current averaged over any 20 ms period; − 1.90 A Ttp = 100 °C; see Fig.2 averaged over any 20 ms period; − 0.90 A Al2O3 PCB mounting (see Fig.7); Tamb = 60 °C; see Fig.3 averaged over any 20 ms period; − 0.65 A epoxy PCB mounting (see Fig.7); Tamb = 60 °C; see Fig.3 IFSM non-repetitive peak forward current t = 10 ms half sine wave; − 25 A Tj = Tj max prior to surge; VR = VRRMmax 1996 Jun 05 2, SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ERSM non-repetitive peak reverse L = 120 mH; Tj = Tj max prior to avalanche energy surge; inductive load switched off BYG60D to J − 10 mJ BYG60K and M − 7 mJ Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.4 −65 +175 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 1 A; Tj = Tj max; see Fig.5 − − 0.98 V IF = 1 A; see Fig.5 − − 1.20 V V(BR)R reverse avalanche IR = 0.1 mA breakdown voltage BYG60D 300 − − V BYG60G 500 − − V BYG60J 700 − − V BYG60K 900 − − V BYG60M 1100 − − V IR reverse current VR = VRRMmax; − − 5 µA see Fig.6 VR = VRRMmax; Tj = 165 °C; − − 100 µA see Fig.6 trr reverse recovery time when switched from IF = 0.5 A to BYG60D to J IR = 1 A; measured at IR = 0.25 A; − − 250 ns see Fig.8 BYG60K and M − − 300 ns Cd diode capacitance VR = 0 V; f = 1 MHz BYG60D to J − 30 − pF BYG60K and M − 25 − pF THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 25 K/W Rth j-a thermal resistance from junction to ambient note 1 100 K/W note 2 150 K/W Notes 1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.7. 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.7. For more information please refer to the ‘General Part of Handbook SC01’. 1996 Jun 05 3, GRAPHICAL DATA MGD481 MGD482 4 1.6 handbook, halfpage handbook, halfpage IF(AV) IF(AV) (A) (A) 3 1.2 2 0.8 1 0.4000100 200 0 100 200 Ttp (°C) Tamb (°C) VR = VRRMmax; δ = 0.5; a = 1.57 Device mounted as shown in Fig.7; VR = VRRMmax; δ = 0.5; a = 1.57. solid line: Al2O3 PCB; dotted line: epoxy PCB. Fig.2 Maximum permissible average forward Fig.3 Maximum permissible average forward current as a function of tie-point temperature current as a function of ambient temperature (including losses due to reverse leakage). (including losses due to reverse leakage). MGD483 MGD484 handbook, halfpage 10handbook, halfpage Tj IF (°C) (A) 160 8 120 6 804DGJKM402000400 800 12000123VR (V) VF (V) Device mounted as shown in Fig.7 Solid line: Al2O3 PCB Solid line: Tj = 25 °C. Dotted line: epoxy PCB. Dotted line: Tj = 175 °C. Fig.4 Maximum permissible junction temperature Fig.5 Forward current as a function of forward as a function of reverse voltage. voltage; maximum values. 1996 Jun 05 4, MGC532 handboo1k,0 halfpage 50 handbook, full pagewidthIR
(µA) 4.5 10 2.5 1 1.25 MSB213 0 100 200 T oj ( C) VR = VRMMmax. Dimensions in mm. Material: AL2O3 or epoxy-glass. Fig.6 Reverse current as a function of junction temperature; maximum values. Fig.7 Printed-circuit board for surface mounting. handbook, full pagewidth IDUT F (A) + 0.5 10 Ω 25Vtrr1Ω50Ω0t0.25 0.5IR
(A) 1 MAM057 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.8 Test circuit and reverse recovery time waveform and definition. 1996 Jun 05 5, PACKAGE OUTLINE 5.5 handbook, full pagewidth 5.1 4.5 4.3 2.3 2.0 0.05 0.23.3 2.7 MSA414 2.8 1.6 2.4 1.4 Marking band indicates the cathode. Dimensions in mm. Fig.9 SOD106.DEFINITIONS
Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jun 05 6]15
Similar documents
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D168 BYG50 series Controlled avalanche rectifiers Preliminary specification 1996 May 24 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION The well-defined void-free case is of a transfer-moulded thermo-setting • Glass passivated DO-
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D121 BYD77 series Ultra fast low-loss controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of December 1991 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION hermetically sealed and fatigue free as coeff
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 BYD73 series Ultra fast low-loss controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of December 1991 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION hermetically sealed and fatigue free as coeff
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D122 BYD71 series Ultra fast low-loss controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of February 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION hermetically sealed and fatigue free as coeff
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 BYD63 Ripple blocking diode Product specification 1996 Jun 10 Supersedes data of November 1995 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION and fatigue free as coefficients of • expansion of all used parts areGlass passiva
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D121 BYD57 series Fast soft-recovery controlled avalanche rectifiers Product specification 1996 Jun 05 Supersedes data of October 1993 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION hermetically sealed and fatigue free as coeffic
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 BYD53 series Fast soft-recovery controlled avalanche rectifiers Product specification 1996 Jun 05 Supersedes data of December 1994 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION hermetically sealed and fatigue free as coeffi
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D121 BYD47 series Fast soft-recovery rectifiers Product specification 1996 Jun 05 Supersedes data of November 1994 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION hermetically sealed and fatigue free as coefficients of expansion o
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 BYD43 series Fast soft-recovery rectifiers Product specification 1996 Jun 05 Supersedes data of February 1995 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION and fatigue free as coefficients of expansion of all used parts are
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRF745/D The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in Motorola Preferred Device a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal over
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRF2545CT/D The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in Motorola Preferred Device a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal o
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRF2060CT/D The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in Motorola Preferred Device a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal o
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRF2045CT/D The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in Motorola Preferred Device a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal o
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRF20200CT/D The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in Motorola Preferred Device a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRF20100CT/D The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in Motorola Preferred Device a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRF1545CT/D The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in Motorola Preferred Device a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal o
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRF1045/D The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in Motorola Preferred Device a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal ove
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRD835L/D DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle Motorola Preferred Device with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and ste
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRD620CT/D DPAK Surface Mount Package .in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRD320/D DPAK Surface Mount Package .designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. These state–of–the–art devices have the follo
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRD1035CTL/D DPAK Power Surface Mount Package SCHOTTKY BARRIER .employing the Schottky Barrier principle in a large area metal–to–silicon RECTIFIER power diode. State of the art geometry features epitaxial construction with oxide 10 AMPERES passi
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRB4030/D Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: Motorola Preferred Device • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Junction
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRB3030CT/D Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: Motorola Preferred Device • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Juncti
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRB3030CTL/D .using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: Features: • Dual Diode Construction — May be Paralleled for Higher Current Output SCHOTTKY BARRIER •
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRB2545CT/D D2PAK Surface Mount Power Package Motorola Preferred Device The D2PAK Power Rectifier employs the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Center–Tap Conf
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRB2535CTL/D D2PAK Surface Mount Power Package Motorola Preferred Device The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxi
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRB2515L/D ! Motorola Preferred Device D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial SCHOTTKY BARRIER cons
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRB2060CT/D D2PAK Surface Mount Power Package Motorola Preferred Device Employs the use of the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Package Designed for Power Sur
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRB20200CT/D Dual Schottky Rectifier .using Schottky Barrier technology with a platinum barrier metal. This state–of–the–art device is designed for use in high frequency switching power Motorola Preferred Device supplies and converters with up to
Order this document SEMICONDUCTOR TECHNICAL DATA by MBRB20100CT/D D2PAK Surface Mount Power Package Motorola Preferred Device The D2PAK Power Rectifier employs the use of the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Pac