Download: DISCRETE SEMICONDUCTORS DATA SHEET BYG60 series Fast soft-recovery controlled avalanche rectifiers Preliminary specification 1996 Jun 05 File under Discrete Semiconductors, SC01
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D168 BYG60 series Fast soft-recovery controlled avalanche rectifiers Preliminary specification 1996 Jun 05 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION The well-defined void-free case is of a transfer-moulded thermo-setting • Glass passivated DO-214AC surface mountable plastic. • High maximum operating package with glass passivated chip. temperature • Low leakage current • Excellent stability handbook, 4 columns cathode band • Guaranteed avalanche energykaabsorption capability • UL 94V-O classified plastic package • Shipp...
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DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage M3D168BYG60 series Fast soft-recovery
controlled avalanche rectifiers Preliminary specification 1996 Jun 05 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION The well-defined void-free case is of a transfer-moulded thermo-setting • Glass passivated DO-214AC surface mountable plastic. • High maximum operating package with glass passivated chip. temperature • Low leakage current • Excellent stability handbook, 4 columns cathode band • Guaranteed avalanche energykaabsorption capability • UL 94V-O classified plastic package • Shipped in 12 mm embossed tape. Top view Side view MSA474 Fig.1 Simplified outline (DO-214AC; SOD106) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYG60D − 200 V BYG60G − 400 V BYG60J − 600 V BYG60K − 800 V BYG60M − 1000 V VR continuous reverse voltage BYG60D − 200 V BYG60G − 400 V BYG60J − 600 V BYG60K − 800 V BYG60M − 1000 V IF(AV) average forward current averaged over any 20 ms period; − 1.90 A Ttp = 100 °C; see Fig.2 averaged over any 20 ms period; − 0.90 A Al2O3 PCB mounting (see Fig.7); Tamb = 60 °C; see Fig.3 averaged over any 20 ms period; − 0.65 A epoxy PCB mounting (see Fig.7); Tamb = 60 °C; see Fig.3 IFSM non-repetitive peak forward current t = 10 ms half sine wave; − 25 A Tj = Tj max prior to surge; VR = VRRMmax 1996 Jun 05 2, SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ERSM non-repetitive peak reverse L = 120 mH; Tj = Tj max prior to avalanche energy surge; inductive load switched off BYG60D to J − 10 mJ BYG60K and M − 7 mJ Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.4 −65 +175 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 1 A; Tj = Tj max; see Fig.5 − − 0.98 V IF = 1 A; see Fig.5 − − 1.20 V V(BR)R reverse avalanche IR = 0.1 mA breakdown voltage BYG60D 300 − − V BYG60G 500 − − V BYG60J 700 − − V BYG60K 900 − − V BYG60M 1100 − − V IR reverse current VR = VRRMmax; − − 5 µA see Fig.6 VR = VRRMmax; Tj = 165 °C; − − 100 µA see Fig.6 trr reverse recovery time when switched from IF = 0.5 A to BYG60D to J IR = 1 A; measured at IR = 0.25 A; − − 250 ns see Fig.8 BYG60K and M − − 300 ns Cd diode capacitance VR = 0 V; f = 1 MHz BYG60D to J − 30 − pF BYG60K and M − 25 − pF THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 25 K/W Rth j-a thermal resistance from junction to ambient note 1 100 K/W note 2 150 K/W Notes 1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.7. 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.7. For more information please refer to the ‘General Part of Handbook SC01’. 1996 Jun 05 3, GRAPHICAL DATA MGD481 MGD482 4 1.6 handbook, halfpage handbook, halfpage IF(AV) IF(AV) (A) (A) 3 1.2 2 0.8 1 0.4000100 200 0 100 200 Ttp (°C) Tamb (°C) VR = VRRMmax; δ = 0.5; a = 1.57 Device mounted as shown in Fig.7; VR = VRRMmax; δ = 0.5; a = 1.57. solid line: Al2O3 PCB; dotted line: epoxy PCB. Fig.2 Maximum permissible average forward Fig.3 Maximum permissible average forward current as a function of tie-point temperature current as a function of ambient temperature (including losses due to reverse leakage). (including losses due to reverse leakage). MGD483 MGD484 handbook, halfpage 10handbook, halfpage Tj IF (°C) (A) 160 8 120 6 804DGJKM402000400 800 12000123VR (V) VF (V) Device mounted as shown in Fig.7 Solid line: Al2O3 PCB Solid line: Tj = 25 °C. Dotted line: epoxy PCB. Dotted line: Tj = 175 °C. Fig.4 Maximum permissible junction temperature Fig.5 Forward current as a function of forward as a function of reverse voltage. voltage; maximum values. 1996 Jun 05 4, MGC532 handboo1k,0 halfpage 50 handbook, full pagewidthIR
(µA) 4.5 10 2.5 1 1.25 MSB213 0 100 200 T oj ( C) VR = VRMMmax. Dimensions in mm. Material: AL2O3 or epoxy-glass. Fig.6 Reverse current as a function of junction temperature; maximum values. Fig.7 Printed-circuit board for surface mounting. handbook, full pagewidth IDUT F (A) + 0.5 10 Ω 25Vtrr1Ω50Ω0t0.25 0.5IR
(A) 1 MAM057 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.8 Test circuit and reverse recovery time waveform and definition. 1996 Jun 05 5, PACKAGE OUTLINE 5.5 handbook, full pagewidth 5.1 4.5 4.3 2.3 2.0 0.05 0.23.3 2.7 MSA414 2.8 1.6 2.4 1.4 Marking band indicates the cathode. Dimensions in mm. Fig.9 SOD106.DEFINITIONS
Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jun 05 6]15
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