Download: DISCRETE SEMICONDUCTORS DATA SHEET BYD77 series Ultra fast low-loss controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of December 1991

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D121 BYD77 series Ultra fast low-loss controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of December 1991 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION hermetically sealed and fatigue free as coefficients of expansion of all • Glass passivated Cavity free cylindrical glass SOD87 (1) used parts are matched. • High maximum operating package through Implotec temperature technology. This package is (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Guaranteed av...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage M3D121

BYD77 series Ultra fast low-loss

controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of December 1991 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION hermetically sealed and fatigue free as coefficients of expansion of all • Glass passivated Cavity free cylindrical glass SOD87 (1) used parts are matched. • High maximum operating package through Implotec temperature technology. This package is (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Guaranteed avalanche energy handbook, 4 columnskaabsorption capability • Shipped in 8 mm embossed tape • Smallest surface mount MAM061 rectifier outline. Fig.1 Simplified outline (SOD87) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYD77A − 50 V BYD77B − 100 V BYD77C − 150 V BYD77D − 200 V BYD77E − 250 V BYD77F − 300 V BYD77G − 400 V VR continuous reverse voltage BYD77A − 50 V BYD77B − 100 V BYD77C − 150 V BYD77D − 200 V BYD77E − 250 V BYD77F − 300 V BYD77G − 400 V IF(AV) average forward current Ttp = 105 °C; see Figs 2 and 3; BYD77A to D averaged over any 20 ms period; − 2.00 A see also Figs 10 and 11 BYD77E to G − 1.85 A IF(AV) average forward current Tamb = 60 °C; PCB mounting (see BYD77A to D Fig.16); see Figs 4 and 5; − 0.85 A averaged over any 20 ms period; BYD77E to G − 0.80 A see also Figs 10 and 11 1996 May 24 2, SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IFRM repetitive peak forward current Ttp = 105 °C; see Figs 6 and 7 BYD77A to D − 15 A BYD77E to G − 13 A IFRM repetitive peak forward current Tamb = 60 °C; see Figs 8 and 9 BYD77A to D − 8.5 A BYD77E to G − 8.0 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; − 25 A Tj = Tj max prior to surge; VR = VRRMmax ERSM non-repetitive peak reverse L = 120 mH; Tj = 25 °C prior to − 10 mJ avalanche energy surge; inductive load switched off Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 1 A; Tj = Tj max; BYD77A to D see Figs 12 and 13 − − 0.75 V BYD77E to G − − 0.83 V VF forward voltage IF = 1 A; BYD77A to D see Figs 12 and 13 − − 0.98 V BYD77E to G − − 1.05 V V(BR)R reverse avalanche breakdown IR = 0.1 mA voltage BYD77A 55 − − V BYD77B 110 − − V BYD77C 165 − − V BYD77D 220 − − V BYD77E 275 − − V BYD77F 330 − − V BYD77G 440 − − V IR reverse current VR = VRRMmax; − − 1 µA see Fig.14 VR = VRRMmax; − − 100 µA Tj = 165 °C; see Fig.14 trr reverse recovery time when switched from BYD77A to D IF = 0.5 A to IR = 1 A; − − 25 ns measured at IR = 0.25 A;BYD77E to G − − 50 ns see Fig.18 1996 May 24 3, SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Cd diode capacitance f = 1 MHz; VR = 0 V; BYD77A to D see Fig.15 − 50 − pF BYD77E to G − 40 − pF dI maximum slope of reverse recovery when switched from -R- dt current IF = 1 A to VR ≥ 30 V BYD77A to D and dIF/dt = −1 A/µs; − − 4 A/µs see Fig.17 BYD77E to G − − 5 A/µs THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 30 K/W Rth j-a thermal resistance from junction to ambient note 1 150 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16. For more information please refer to the ‘General Part of Handbook SC01’. 1996 May 24 4, GRAPHICAL DATA MCD598 MCD596 handbook, h4alfpage handbook, h3alfpage IF(AV)

I

(A) F(AV) (A) 000100 T ( o 200 0 100 o 200 tp C) Tt p ( C) BYD77A to D BYD77E toGa= 1.42; VR = VRRMmax; δ = 0.5. a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. Switched mode application. Fig.2 Maximum permissible average forward Fig.3 Maximum permissible average forward current as a function of tie-point temperature current as a function of tie-point temperature (including losses due to reverse leakage). (including losses due to reverse leakage). MCD597 MCD595 handbook1, .2 1.0 halfpage handbook, halfpage I F(AV) (A) IF(AV) (A) 0.8 0.5 0.4000100 200 0 100oToTamb( C) amb( C) BYD77A to D BYD77E toGa= 1.42; VR = VRRMmax; δ = 0.5. a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.16. Device mounted as shown in Fig.16. Switched mode application. Switched mode application. Fig.4 Maximum permissible average forward Fig.5 Maximum permissible average forward current as a function of ambient temperature current as a function of ambient temperature (including losses due to reverse leakage). (including losses due to reverse leakage). 1996 May 24 5, MCD593 handbook,2 fu0ll pagewidth δ = I FRM 0.05 (A) 0.1 0.2 0.5 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 tp (ms ) BYD77A to D Ttp = 105 °C; Rth j-tp = 30 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V. Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MCD591 handbook,2 f0ull pagewidth I FRM δ = ( ) 0.05 A 0.1 0.2 0.5 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 tp (ms ) BYD77E to G Ttp = 105°C; Rth j-tp = 30 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V. Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 May 24 6, MCD592 handbook,1 f0ull pagewidth I FRM δ = (A) 0.05 0.1 0.2 0.5 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 tp (ms ) BYD77A to D Tamb = 60 °C; Rth j-a = 150 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V. Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MCD590 handbook, 1fu0ll pagewidth I FRM (A) δ = 0.05 0.1 0.2 0.5 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 tp (ms ) BYD77E to G Tamb = 60 °C; Rth j-a = 150 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V. Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 May 24 7, MGC530 MGC52922handbook, halfpage a=3 2.5 2 1.57 1.42 handbook, halfpage a=3 2.5 2 1.57 1.42PP(W) (W) 1100012012IF(AV) (A) IF(AV) (A) BYD77A to D BYD77E toGa= IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.10 Maximum steady state power dissipation Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, (forward plus leakage current losses, excluding switching losses) as a function excluding switching losses) as a function of average forward current. of average forward current. MCD594 MGC531 handbook, halfpage 10handbook, halfpage IF IF (A) (A) 88664422000120123V(V) VF (V)F BYD77A to D BYD77E to G Dotted line: Tj = 175 °C. Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. Solid line: Tj = 25 °C. Fig.12 Forward current as a function of forward Fig.13 Forward current as a function of forward voltage; maximum values. voltage; maximum values. 1996 May 24 8, MGA853 2 MCD608 103 10handbook, halfpage handbook, halfpage

IR

( µ A) Cd (pF) A, B, C, D E, F, G110100 o 200 1 10 10 2 10 3T j ( C) VR (V) VR = VRRMmax. f = 1 MHz; Tj = 25 °C. Fig.14 Reverse current as a function of junction Fig.15 Diode capacitance as a function of reverse temperature; maximum values. voltage; typical values. handbook, full pagewidth handboIoFk, halfpage dIF dt 4.5 trr 10% t 2.5 dIR dt 100% IR MGC499 1.25 MSB213 Dimensions in mm. Fig.16 Printed-circuit board for surface mounting. Fig.17 Reverse recovery definitions. 1996 May 24 9, handbook, full pagewidth DUT IF (A) + 0.5 t 10 Ω 25 V rr1Ω50Ω0t0.25 0.5

IR

(A) 1 MAM057 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.18 Test circuit and reverse recovery time waveform and definition. 1996 May 24 10, PACKAGE OUTLINE 3.5 0.2 handbook, full pagewidth 0.3 2.05OD= 0.05 MBA505 1.9 O D1 = 0.1 Dimensions in mm. The marking band indicates the cathode. Fig.19 SOD87.

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 24 11]
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