Download: DISCRETE SEMICONDUCTORS DATA SHEET BYD73 series Ultra fast low-loss controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of December 1991

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 BYD73 series Ultra fast low-loss controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of December 1991 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION hermetically sealed and fatigue free as coefficients of expansion of all • Glass passivated Cavity free cylindrical glass SOD81 (1) used parts are matched. • High maximum operating package through Implotec temperature technology. This package is (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Guaranteed av...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage M3D119

BYD73 series Ultra fast low-loss

controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of December 1991 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION hermetically sealed and fatigue free as coefficients of expansion of all • Glass passivated Cavity free cylindrical glass SOD81 (1) used parts are matched. • High maximum operating package through Implotec temperature technology. This package is (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Guaranteed avalanche energy handbook, 4 columnskaabsorption capability • Available in ammo-pack. MAM123 Fig.1 Simplified outline (SOD81) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYD73A − 50 V BYD73B − 100 V BYD73C − 150 V BYD73D − 200 V BYD73E − 250 V BYD73F − 300 V BYD73G − 400 V VR continuous reverse voltage BYD73A − 50 V BYD73B − 100 V BYD73C − 150 V BYD73D − 200 V BYD73E − 250 V BYD73F − 300 V BYD73G − 400 V IF(AV) average forward current Ttp = 55 °C; lead length = 10 mm; BYD73A to D see Figs 2 and 3; − 1.75 A averaged over any 20 ms period; BYD73E to G − 1.70 A see also Figs 10 and 11 IF(AV) average forward current Tamb = 60 °C; PCB mounting (see BYD73A to D Fig.16); see Figs 4 and 5; − 1.00 A averaged over any 20 ms period; BYD73E to G − 0.95 A see also Figs 10 and 11 1996 May 24 2, SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IFRM repetitive peak forward current Ttp = 55 °C; see Figs 6 and 7 BYD73A to D − 14 A BYD73E to G − 15 A IFRM repetitive peak forward current Tamb = 60 °C; see Figs 8 and 9 BYD73A to D − 8.5 A BYD73E to G − 9.5 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; − 25 A Tj = Tj max prior to surge; VR = VRRMmax ERSM non-repetitive peak reverse L = 120 mH; Tj = Tj max prior to − 10 mJ avalanche energy surge; inductive load switched off Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 1 A; Tj = Tj max; BYD73A to D see Figs 12 and 13 − − 0.75 V BYD73E to G − − 0.83 V VF forward voltage IF = 1 A; BYD73A to D see Figs 12 and 13 − − 0.98 V BYD73E to G − − 1.05 V V(BR)R reverse avalanche breakdown IR = 0.1 mA voltage BYD73A 55 − − V BYD73B 110 − − V BYD73C 165 − − V BYD73D 220 − − V BYD73E 275 − − V BYD73F 330 − − V BYD73G 440 − − V IR reverse current VR = VRRMmax; − − 1 µA see Fig.14 VR = VRRMmax; − − 100 µA Tj = 165 °C; see Fig.14 trr reverse recovery time when switched from BYD73A to D IF = 0.5 A to IR = 1 A; − − 25 ns measured at IR = 0.25 A;BYD73E to G − − 50 ns see Fig.18 1996 May 24 3, SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Cd diode capacitance f = 1 MHz; VR = 0 V; BYD73A to D see Fig.15 − 50 − pF BYD73E to G − 40 − pF dI maximum slope of reverse recovery when switched from -R- dt current IF = 1 A to VR ≥ 30 V BYD73A to D and dIF/dt = −1 A/µs; − − 4 A/µs see Fig.17 BYD73E to G − − 5 A/µs THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 60 K/W Rth j-a thermal resistance from junction to ambient note 1 120 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16. For more information please refer to the ‘General Part of Handbook SC01.’ 1996 May 24 4, GRAPHICAL DATA handbook, halfpage MGC535 handbook, halfpage MGC536 2.0 2.0 IF(AV) IF(AV) (A) (A) 1.6 1.6 lead length 10 mm lead length 10 mm 1.2 1.2 0.8 0.8 0.4 0.4000100 T ( o 200 0 100 200 tp C) Ttp ( o C) BYD73A to D BYD73E toGa= 1.42; VR = VRRMmax; δ = 0.5. a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. Switched mode application. Fig.2 Maximum permissible average forward Fig.3 Maximum permissible average forward current as a function of tie-point temperature current as a function of tie-point temperature (including losses due to reverse leakage). (including losses due to reverse leakage). MGC538 MGC537 1.6 1.6 handbook, halfpage handbook, halfpage IF(AV) IF(AV) (A) (A) 1.2 1.2 0.8 0.8 0.4 0.4000100 o 200 0 100 200Tamb ( C) T o amb ( C) BYD73A to D BYD73E toGa= 1.42; VR = VRRMmax; δ = 0.5. a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.16. Device mounted as shown in Fig.16. Switched mode application. Switched mode application. Fig.4 Maximum permissible average forward Fig.5 Maximum permissible average forward current as a function of ambient temperature current as a function of ambient temperature (including losses due to reverse leakage). (including losses due to reverse leakage). 1996 May 24 5, MCD605 handbook, full pagewidth δ =

I

FRM 0.05 (A) 0.1 0.2 0.5 0 −2 10 10−1 1 10 102 103 104 tp (ms) BYD73A to D Ttp = 55 °C; Rth j-tp = 60 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V. Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MCD607 handbook, 1fu6ll pagewidth δ = 0.05

I FRM

(A) 0.1 0.2 0.5 10-2 10-1 1 10 102 103 104 tp (ms) BYD73E to G Ttp = 55°C; Rth j-tp = 60 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V. Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 May 24 6, MCD604 handbook, full pagewidth δ = 0.05 I FRM (A) 0.1 0.2 0.5 10-2 10-1 21 10 10 10 3 104tp(ms) BYD73A to D Tamb = 60 °C; Rth j-a = 120 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V. Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MCD606 handbook, 1fu0ll pagewidth δ = 0.05 I FRM (A) 0.1 0.2 0.5 10-2 10-1 1 10 102 103 104tp(ms) BYD73E to G Tamb = 60 °C; Rth j-a = 120 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V. Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 May 24 7, MGC539 MGC54022handbook, halfpage handbook, halfpage a=3 2.5 2 1.57 1.42 a=3 2.5 2 1.57 1.42PP(W) (W) 1100012012IF(AV) (A) IF(AV) (A) BYD73A to D BYD73E toGa= IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Fig.10 Maximum steady state power dissipation Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, (forward plus leakage current losses, excluding switching losses) as a function excluding switching losses) as a function of average forward current. of average forward current. MCD594 MGC531 handbook, halfpage 10handbook, halfpage IF IF (A) (A) 88664422000120123V(V) VF (V)F BYD73A to D BYD73E to G Dotted line: Tj = 175 °C. Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. Solid line: Tj = 25 °C. Fig.12 Forward current as a function of forward Fig.13 Forward current as a function of forward voltage; maximum values. voltage; maximum values. 1996 May 24 8, MGA853 MCD608 103 10 handbook, halfpage handbook, halfpage

IR

( µ A) Cd (pF) A, B, C, D E, F, G110100 T ( o C) 200 1 10 10 2 103jVR (V) VR = VRRMmax. f = 1 MHz; Tj = 25 °C. Fig.14 Reverse current as a function of junction Fig.15 Diode capacitance as a function of reverse temperature; maximum values. voltage; typical values. handbook, halfpage 25 handboIoFk, halfpage dIF dt 50 trr 10% t dIR dt 100% IR MGC499 MGA200 Dimensions in mm. Fig.16 Device mounted on a printed-circuit board. Fig.17 Reverse recovery definitions. 1996 May 24 9, handbook, full pagewidth IDUT F (A) + 0.5 10 Ω 25Vtrr1Ω50Ω0t0.25 0.5

IR

(A) 1 MAM057 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.18 Test circuit and reverse recovery time waveform and definition. 1996 May 24 10, PACKAGE OUTLINE 5 max handbook, full pagewidth 0.81 max 2.15 28 min 3.8 max 28 min MBC051max Dimensions in mm. The marking band indicates the cathode. Fig.19 SOD81.

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 24 11]
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