Download: DISCRETE SEMICONDUCTORS DATA SHEET BYD71 series Ultra fast low-loss controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of February 1992

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D122 BYD71 series Ultra fast low-loss controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of February 1992 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION hermetically sealed and fatigue free as coefficients of expansion of all • Glass passivated Cavity free cylindrical SOD91 glass (1) used parts are matched. • High maximum operating package through Implotec temperature technology. This package is (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Guaranteed av...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage M3D122

BYD71 series Ultra fast low-loss

controlled avalanche rectifiers Product specification 1996 May 24 Supersedes data of February 1992 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION hermetically sealed and fatigue free as coefficients of expansion of all • Glass passivated Cavity free cylindrical SOD91 glass (1) used parts are matched. • High maximum operating package through Implotec temperature technology. This package is (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Guaranteed avalanche energykaabsorption capability handbook, full pagewidth • Available in ammo-pack. MAM196 Fig.1 Simplified outline (SOD91) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYD71A − 50 V BYD71B − 100 V BYD71C − 150 V BYD71D − 200 V BYD71E − 250 V BYD71F − 300 V BYD71G − 400 V VR continuous reverse voltage BYD71A − 50 V BYD71B − 100 V BYD71C − 150 V BYD71D − 200 V BYD71E − 250 V BYD71F − 300 V BYD71G − 400 V IF(AV) average forward current Ttp = 55 °C; lead length = 10 mm; BYD71A to D see Figs 2 and 3; − 0.56 A averaged over any 20 ms period; BYD71E to G − 0.54 A see also Figs 10 and 11 IF(AV) average forward current Tamb = 60 °C; PCB mounting (see BYD71A to D Fig.16); see Figs 4 and 5; − 0.43 A averaged over any 20 ms period; BYD71E to G − 0.41 A see also Figs 10 and 11 IFRM repetitive peak forward current Ttp = 55 °C; see Figs 6 and 7 BYD71A to D − 4.7 A BYD71E to G − 5.0 A 1996 May 24 2, SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IFRM repetitive peak forward current Tamb = 60 °C; see Figs 8 and 9 BYD71A to D − 3.7 A BYD71E to G − 3.9 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; − 7 A Tj = Tj max prior to surge; VR = VRRMmax PRSM non-repetitive peak reverse power t = 20 µs half sine wave; Tj = Tj max dissipation prior to surge BYD71A to D − 250 W BYD71E to G − 150 W Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 0.5 A; Tj = Tj max; BYD71A to D see Figs 12 and 13 − − 0.84 V BYD71E to G − − 0.90 V VF forward voltage IF = 0.5 A; BYD71A to D see Figs 12 and 13 − − 1.05 V BYD71E to G − − 1.11 V V(BR)R reverse avalanche breakdown IR = 0.1 mA voltage BYD71A 55 − − V BYD71B 110 − − V BYD71C 165 − − V BYD71D 220 − − V BYD71E 275 − − V BYD71F 330 − − V BYD71G 440 − − V IR reverse current VR = VRRMmax; − − 1 µA see Fig 14 VR = VRRMmax; − − 75 µA Tj = 165 °C; see Fig 14 trr reverse recovery time when switched from BYD71A to D IF = 0.5 A to IR = 1 A; − − 25 ns measured at IR = 0.25 ABYD71E to G − − 50 ns see Fig 18 Cd diode capacitance f = 1 MHz; VR = 0 V; BYD71A to D see Fig.15 − 25 − pF BYD71E to G − 20 − pF 1996 May 24 3, SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dI maximum slope of reverse recovery when switched from -R- dt current IF = 1 A to VR ≥ 30 V BYD71A to D and dIF/dt = −1 A/µs; − − 4 A/µs see Fig.17 BYD71E to G − − 5 A/µs THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 180 K/W Rth j-a thermal resistance from junction to ambient note 1 250 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.16. For more information please refer to the ‘General Part of Handbook SC01’. 1996 May 24 4, GRAPHICAL DATA MCD565 MCD564 0.8 0.8 handbook, halfpage handbook, halfpage IF(AV) IF(AV) (A) (A) 0.6 0.6 lead length 10 mm lead length 10 mm 0.4 0.4 0.2 0.2000100 o 200 0 100 o 200Ttp ( C) Ttp ( C) BYD71A to D BYD71E toGa= 1.42; VR = VRRMmax; δ = 0.5. a = 1.42; VR = VRRMmax; δ = 0.5. Switched mode application. Switched mode application. Fig.2 Maximum permissible average forward Fig.3 Maximum permissible average forward current as a function of tie-point temperature current as a function of tie-point temperature (including losses due to reverse leakage). (including losses due to reverse leakage). MGC526 MGC527 0.6 0.6 handbook, halfpage handbook, halfpage IF(AV) IF(AV) (A) (A) 0.4 0.4 0.2 0.2000100 o 200 0 100 200Tamb ( C) Tamb ( o C) BYD71A to D BYD71E toGa= 1.42; VR = VRRMmax; δ = 0.5. a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.16. Device mounted as shown in Fig.16. Switched mode application. Switched mode application. Fig.4 Maximum permissible average forward Fig.5 Maximum permissible average forward current as a function of ambient temperature current as a function of ambient temperature (including losses due to reverse leakage). (including losses due to reverse leakage). 1996 May 24 5, MCD563 5.0 handbook, full pagewidth I FRM δ = (A) 0.05 0.1 2.5 0.2 0.5 10 -20110 -1 10 10 10 2 103t10 p (ms ) BYD71A to D Ttp = 55 °C; Rth j-tp = 180 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V. Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MCD562 handbook,5 fu.0ll pagewidth δ = I 0.05 FRM (A) 0.1 2.5 0.2 0.5 10-2 10-1 100 101 102 103 104 tp (ms) BYD71E to G Ttp = 55 °C; Rth j-tp = 180 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V. Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 May 24 6, MCD561 handbook, full pa4gewidth I FRM δ = (A) 0.05 0.1 0.2 0.5 10-2 10-1 100 101 102 103 104 tp (ms) BYD71A to D Tamb = 60 °C; Rth j-a = 250 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 200 V. Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MCD560 handbook, full pagewidth I FRM δ = (A) 0.05 0.1 0.2 1 0.5 10-2 10-1 100 101 102 103 104 tp (ms ) BYD71E to G Tamb = 60 °C; Rth j-a = 250 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 400 V. Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 May 24 7, MCD567 MCD566 0.50 0.50 handbook, halfpage a = 3 handbook, halfpage a = 3 2.5 2.5 a = 1.57PP(W) 2 a = 1.57 2(W) 1.42 1.42 0.25 0.250000.25 0.50 0 0.25 0.50 I (A) I F(AV) (A)F(AV) BYD71A to D BYD71E toGa= IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Switched mode application. Switched mode application. Fig.10 Maximum steady state power dissipation Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, (forward plus leakage current losses, excluding switching losses) as a function excluding switching losses) as a function of average forward current. of average forward current. MCD568 MCD56955handbook, halfpage handbook, halfpage IF IF (A) (A) 4433221100012340123VF (V) VF (V) BYD71A to D BYD71E to G Dotted line: Tj = 175 °C. Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. Solid line: Tj = 25 °C. Fig.12 Forward current as a function of forward Fig.13 Forward current as a function of forward voltage; maximum values. voltage; maximum values. 1996 May 24 8, 3 MCD582 MCD55910 102handbook, halfpage handbook, halfpage

IR

(µA) Cd (pF) 10 2 A, B, C, D E, F, G110100 200 1 10 102 103 Tj ( oC) VR (V) VR = VRRMmax. f = 1 MHz; Tj = 25 °C. Fig.14 Reverse current as a function of junction Fig.15 Diode capacitance as a function of reverse temperature; maximum values. voltage; typical values. handbook, halfpage 25 handboIoFk, halfpage dIF dt trr 10% t dIR dt 100% 2 IR MGC499 MGA200 Dimensions in mm. Fig.16 Device mounted on a printed-circuit board. Fig.17 Reverse recovery definitions. 1996 May 24 9, handbook, full pagewidth DUT IF (A) + 0.5 t 10 Ω 25 V rr1Ω50Ω0t0.25 0.5

IR

(A) 1 MAM057 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.18 Test circuit and reverse recovery time waveform and definition. 1996 May 24 10, PACKAGE OUTLINE 3.5 max handbook, full pagewidth 0.55 max 1.7 max 29 min 3.0 max 29 min MBC053 Dimensions in mm. The marking band indicates the cathode. Fig.19 SOD91.

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 24 11]
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