Download: DISCRETE SEMICONDUCTORS DATA SHEET BYD57 series Fast soft-recovery controlled avalanche rectifiers Product specification 1996 Jun 05 Supersedes data of October 1993

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D121 BYD57 series Fast soft-recovery controlled avalanche rectifiers Product specification 1996 Jun 05 Supersedes data of October 1993 File under Discrete Semiconductors, SC01 FEATURES DESCRIPTION hermetically sealed and fatigue free as coefficients of expansion of all • Glass passivated Cavity free cylindrical glass SOD87 (1) used parts are matched. • High maximum operating package through Implotec temperature technology. This package is (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Guaranteed aval...
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DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, halfpage M3D121

BYD57 series Fast soft-recovery

controlled avalanche rectifiers Product specification 1996 Jun 05 Supersedes data of October 1993 File under Discrete Semiconductors, SC01, FEATURES DESCRIPTION hermetically sealed and fatigue free as coefficients of expansion of all • Glass passivated Cavity free cylindrical glass SOD87 (1) used parts are matched. • High maximum operating package through Implotec temperature technology. This package is (1) Implotec is a trademark of Philips. • Low leakage current • Excellent stability • Guaranteed avalanche energy handbook, 4 columnskaabsorption capability • Shipped in 8 mm embossed tape • Smallest surface mount rectifier MAM061 outline. Fig.1 Simplified outline (SOD87) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYD57D − 200 V BYD57G − 400 V BYD57J − 600 V BYD57K − 800 V BYD57M − 1000 V VR continuous reverse voltage BYD57D − 200 V BYD57G − 400 V BYD57J − 600 V BYD57K − 800 V BYD57M − 1000 V IF(AV) average forward current Ttp = 85 °C; see Fig.2; − 1.0 A averaged over any 20 ms period; see also Fig.6 Tamb = 60 °C; PCB mounting (see − 0.4 A Fig.11); see Fig.3; averaged over any 20 ms period; see also Fig.6 IFRM repetitive peak forward current Ttp = 85 °C; see Fig.4 − 8.5 A Tamb = 60 °C; see Fig.5 − 3.0 A IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj = 25 °C − 5.0 A prior to surge; VR = VRRMmax ERSM non-repetitive peak reverse L = 120 mH; Tj = Tj max prior to − 10 mJ avalanche energy surge; inductive load switched off Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.7 −65 +175 °C 1996 Jun 05 2, ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 1 A; Tj = Tj max; − − 2.1 V see Fig.8 IF = 1 A; − − 3.6 V see Fig.8 V(BR)R reverse avalanche breakdown IR = 0.1 mA voltage BYD57D 300 − − V BYD57G 500 − − V BYD57J 700 − − V BYD57K 900 − − V BYD57M 1100 − − V IR reverse current VR = VRRMmax; − − 5 µA see Fig.9 VR = VRRMmax; − − 100 µA Tj = 165 °C; see Fig.9 trr reverse recovery time when switched from BYD57D to J IF = 0.5 A to IR = 1 A; − − 30 ns measured at I BYD57K andMR= 0.25 A; − − 75 ns see Fig.12 Cd diode capacitance f = 1 MHz; VR = 0 V; − 20 − pF see Fig.10 dI maximum slope of reverse recovery when switched from -R- dt current IF = 1 A to VR ≥ 30 V BYD57D to J and dIF/dt = −1 A/µs; − − 7 A/µs see Fig.13 BYD57K and M − − 6 A/µs THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 30 K/W Rth j-a thermal resistance from junction to ambient note 1 150 K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11. For more information please refer to the ‘General Part of Handbook SC01’. 1996 Jun 05 3, GRAPHICAL DATA MSA961 MSA960 2.0 0.5 I F(AV) I F(AV) (A) (A) 1.6 0.4 1.2 0.3 0.8 0.2 0.4 0.100040 80 120 160 200 0 40 80 120 160 200 T (o C) T ( otp amb C) a = 1.42; VR = VRRMmax; δ = 0.5. a = 1.42; VR = VRRMmax; δ = 0.5. Device mounted as shown in Fig.11. Switched mode application. Switched mode application. Fig.2 Maximum permissible average forward Fig.3 Maximum permissible average forward current as a function of tie-point temperature current as a function of ambient temperature (including losses due to reverse leakage). (including losses due to reverse leakage). MSA964 handbook, full pagewidth I FRM (A) δ = 0.05 6 0.1 4 0.2 0.5 10 2 101110 10 2 10 3 10 4 tp (ms) Ttp = 85 °C; Rth j-tp = 30 K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Jun 05 4, MSA965 handbook, full pagewidth I FRM (A) δ = 0.05 0.1 0.2 0.5 10 2 101110 10 2 10 3 4tp (ms) Tamb = 60 °C; Rth j-a = 150K/W. VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V. Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. MGC525 MSA962 3 200 handbook, halfpage handbook, halfpage P a=3 2.5 2 1.57 1.42 (W) T j ( o C) DGJKM0000.5 1.0 0 500 1000 IF(AV) (A) V R (V) a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. Solid line = VR. Fig.6 Maximum steady state power dissipation Dotted line = VRRM; δ = 0.5. (forward plus leakage current losses, excluding switching losses) as a function of Fig.7 Maximum permissible junction temperature average forward current. as a function of reverse voltage. 1996 Jun 05 5, MSA963 MGC532 4 103handbook, halfpage handbook, halfpageIFI(A) R (µA) 024680100 200VF(V) Tj ( o C) Dotted line: Tj = 175 °C. Solid line: Tj = 25 °C. VR = VRRMmax. Fig.8 Forward current as a function of forward Fig.9 Reverse current as a function of junction voltage; maximum values. temperature; maximum values. MGC524 handboo1 k,0 halfpage handbook, full pagewidth Cd (pF) 4.5 2.5 1 10 102 103 1.25 MSB213 VR (V) f = 1 MHz; Tj = 25 °C. Dimensions in mm. Fig.10 Diode capacitance as a function of reverse voltage; typical values. Fig.11 Printed-circuit board for surface mounting. 1996 Jun 05 6, handbook, full pagewidth DUT IF (A) + 0.5 t 10 Ω 25 V rr1Ω50Ω0t0.25 0.5

IR

(A) 1 MAM057 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.12 Test circuit and reverse recovery time waveform and definition. handboIoFk, halfpage dIF dt trr 10% t dIR dt 100% IR MGC499 Fig.13 Reverse recovery definitions. 1996 Jun 05 7, PACKAGE OUTLINE 3.5 0.2 handbook, full pagewidth 0.3 2.05OD= 0.05 MBA505 1.9 O D1 = 0.1 Dimensions in mm. The marking band indicates the cathode. Fig.14 SOD87.

DEFINITIONS

Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jun 05 8]
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